Abstract: Compounds of the present invention and pharmaceutically acceptable compositions thereof, are useful as modulators of ATP-Binding Cassette (“ABC”) transporters or fragments thereof, including Cystic Fibrosis Transmembrane Conductance Regulator (“CFTR”). The present invention also relates to methods of treating ABC transporter mediated diseases using compounds of the present invention.

Abstract: Various methods and devices are provided for allowing multiple surgical instruments to be inserted into sealing elements of a single surgical access device. The sealing elements can be movable along predefined pathways within the device to allow surgical instruments inserted through the sealing elements to be moved laterally, rotationally, angularly, and vertically relative to a central longitudinal axis of the device for ease of manipulation within a patient's body while maintaining insufflation.

Abstract: The present disclosure describes a Lambertian gas-sensing system that may enable gas sensing in a compact form factor. The Lambertian gas-sensing system may include a hollow cavity, one or more light-emitting diode (LED) illuminators, one or more light-absorption detectors, and a gas exchange manifold. The hollow cavity may mechanically integrate the gas exchange manifold, the one or more LED illuminators, and one or more light-absorption detectors (such as one or more optical detectors). The gas exchange manifold may introduce gas into the hollow cavity and the one or more LED illuminators may emit light into the hollow cavity through one or more ports. The one or more light-absorption detectors may receive light from the hollow cavity through one or more ports.

Abstract: A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.

Abstract: An optoelectric device can comprise a substrate and at least one junction configured to provide an active region within the substrate. Additionally, the device can comprise a metal-mesh semiconductor electrical contact structure attached to a surface of the substrate. The metal-mesh semiconductor electrical contact structure can further comprise a mesh line width, a mesh opening size, and a mesh thickness.

Abstract: A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.

Abstract: A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AISb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.

Abstract: The invention is comprised of systems and methods produced in modules to accelerate learning, creating & increasing ability and programming habits.

Abstract: A method, system and computer program product for progressive enhancement of content in a browser. The method includes receiving a document with content containing a plurality of elements and parsing the received content with at least one processor. The method also includes identifying a subset of the plurality of elements that are marked for enhancement and replacing each of the element in the identified subset with their respective enhancement to obtain the document with the enhanced elements.

Abstract: Methods for fabricating mid-infrared light emitting diodes (LEDs) based upon antimonide-arsenide semiconductor heterostructures and configured into front-side emitting high-brightness LED die and other LED die formats.

Abstract: Optoelectric devices that comprise a semiconductor superlattice heterostructure. One or more individual layers within the semiconductor superlattice heterostructure can further comprise layers of differing thicknesses. In at least one embodiment, an optoelectric device with specially engineered layers can generate an output wavelength of between 3 ?m to 15 ?m at output power levels of 0.01 mW to 100 mW.

Abstract: An optoelectric device can comprise a substrate and at least one junction configured to provide an active region within the substrate. Additionally, the device can comprise a metal-mesh semiconductor electrical contact structure attached to a surface of the substrate. The metal-mesh semiconductor electrical contact structure can further comprise a mesh line width, a mesh opening size, and a mesh thickness.

Abstract: Optoelectric devices that comprise a semiconductor superlattice heterostructure. One or more individual layers within the semiconductor superlattice heterostructure can further comprise layers of differing thicknesses. In at least one embodiment, an optoelectric device with specially engineered layers can generate an output wavelength of between 3 ?m to 15 ?m at output power levels of 0.01 mW to 100 mW.

Abstract: A light emitting diode (LED) with weakly-coupled dielectric buttes deposited along the surface is disclosed. The buttes improve light extraction from a distributed volume of incoherent sources in a high-index substrate, as well as from light backscattered by a rear metallic contact. A lattice arrangement for the buttes maximizes area coverage, subject to the constraint of weak evanescent wave coupling between them. The butte distribution may be fabricated by epitaxial deposition above a current spreading layer, followed by photolithographic patterning and etching.

Abstract: Methods for fabricating mid-infrared light emitting diodes (LEDs) based upon antimonide-arsenide semiconductor heterostructures and configured into front-side emitting high-brightness LED die and other LED die formats.

Abstract: A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.

Abstract: A light emitting diode (LED) with weakly-coupled dielectric buttes deposited along the surface is disclosed. The buttes improve light extraction from a distributed volume of incoherent sources in a high-index substrate, as well as from light backscattered by a rear metallic contact. A lattice arrangement for the buttes maximizes area coverage, subject to the constraint of weak evanescent wave coupling between them. The butte distribution may be fabricated by epitaxial deposition above a current spreading layer, followed by photolithographic patterning and etching.

Abstract: A traveling wave device includes a slow wave circuit supported by a dielectric membrane. The dielectric membrane can have a thickness substantially smaller than a wavelength of operation of the traveling wave device.

Abstract: Group access authorities for a restricted user account group in a directory system are selected to include directory traverse authority. A restricted user account is included in the restricted user account group such that the restricted user account inherits group access authorities. The directory system is configured to allow directory traversing without performing directory traverse checking. An application is confined to run within the restricted user account so that access authorities of the application include group access authorities.

Abstract: A method, system and computer program product for progressive enhancement of content in a browser. The method includes receiving a document with content containing a plurality of elements and parsing the received content with at least one processor. The method also includes identifying a subset of the plurality of elements that are marked for enhancement and replacing each of the element in the identified subset with their respective enhancement to obtain the document with the enhanced elements.