Patents by Inventor Mark Saly

Mark Saly has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210277516
    Abstract: Methods of forming carbon polymer films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to a first carbon precursor to form a substrate surface with terminations based on the reactive functional groups of the first carbon precursor and exposed to a second carbon precursor to react with the surface terminations and form a carbon polymer film. Processing tools and non-transitory memories to perform the process are also disclosed.
    Type: Application
    Filed: March 12, 2020
    Publication date: September 9, 2021
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Ahbijit Basu Mallick, Eugene Yu Jin Kong, Bo Qi
  • Publication number: 20210262084
    Abstract: Methods for depositing tellurium-containing films on a substrate are described. The substrate is exposed to a tellurium precursor and a reactant to form the tellurium-containing film (e.g., elemental tellurium, tellurium oxide, tellurium carbide, tellurium silicide, germanium telluride, antimony telluride, germanium antimony telluride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: February 1, 2021
    Publication date: August 26, 2021
    Applicants: Applied Materials, Inc., Wayne State University
    Inventors: Thomas Knisley, Keenan N. Woods, Mark Saly, Charles H. Winter, Apoorva Upadhyay
  • Publication number: 20210217610
    Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol. These methods do not oxidize the underlying metal layer.
    Type: Application
    Filed: March 9, 2021
    Publication date: July 15, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Li-Qun Xia
  • Publication number: 20210189562
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.
    Type: Application
    Filed: February 23, 2021
    Publication date: June 24, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Tobin Kaufman-Osborn, Kurt Fredrickson, Thomas Knisley, Liqi Wu
  • Patent number: 11028480
    Abstract: Methods for depositing protective coatings on aerospace components are provided and include sequentially exposing the aerospace component to a chromium precursor and a reactant to form a chromium-containing layer on a surface the aerospace component by an atomic layer deposition process. The chromium-containing layer contains metallic chromium, chromium oxide, chromium nitride, chromium carbide, chromium silicide, or any combination thereof.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: June 8, 2021
    Inventors: Thomas Knisley, Mark Saly, David Alexander Britz, David Thompson
  • Patent number: 11028478
    Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Victor Nguyen, Ning Li, Mihaela Balseanu, Li-Qun Xia, Mark Saly, David Thompson
  • Patent number: 11028477
    Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Mark Saly, Keiichi Tanaka, Eswaranand Venkatasubramanian, Mandyam Sriram, Bhaskar Jyoti Bhuyan, Pramit Manna, David Thompson, Andrew Short
  • Publication number: 20210155646
    Abstract: Halide ligand free rhenium complexes are described as well as methods for depositing rhenium-containing films. Some embodiments provide a rhenium complex with a general formula of O3ReO-M-R1R2R3, where M is a group IV element, R1 is selected from H, alkyl, alkenyl, alkynyl, an aromatic ring, or alkoxy, and R2 and R3 are each independently selected from H, alkyl, alkenyl, alkynyl, an aromatic ring, or alkoxy, or R2 and R3 join together to form a ring structure or an oxo group. Some embodiments provide a rhenium complex with a general formula of Re(NR?)3(NHR?), where R? and R? are independently selected from H, alkyl, alkenyl, alkynyl, or an aromatic ring.
    Type: Application
    Filed: November 20, 2020
    Publication date: May 27, 2021
    Applicants: Applied Materials, Inc., Wayne State University
    Inventors: Thomas Knisley, Keenan N. Woods, Mark Saly, Charles H. Winter, Stefan Cwik
  • Publication number: 20210140046
    Abstract: Silyl pseudohalides having a general formula of R4?nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.
    Type: Application
    Filed: November 12, 2020
    Publication date: May 13, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Keenan N. Woods, Cong Trinh, Mark Saly, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Lisa J. Enman
  • Publication number: 20210134593
    Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.
    Type: Application
    Filed: January 12, 2021
    Publication date: May 6, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Wenyi Liu
  • Publication number: 20210123136
    Abstract: The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.
    Type: Application
    Filed: October 29, 2020
    Publication date: April 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Lakmal C. Kalutarage, Liqi Wu, Pratham Jain, Jeffrey W. Anthis, Mark Saly, Mei Chang, David Thompson
  • Patent number: 10985014
    Abstract: Methods of selectively depositing a film on a hydroxide terminated surface relative to a hydrogen terminated surface are described. The hydrogen terminated surface is exposed to a nitriding agent to form an amine terminated surface which is exposed to a blocking molecule to form a blocking layer on the surface. A film can then be selectively deposited on the hydroxide terminated surface.
    Type: Grant
    Filed: July 17, 2018
    Date of Patent: April 20, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mark Saly, Bhaskar Jyoti Bhuyan
  • Patent number: 10985009
    Abstract: Embodiments include a method for forming a carbon containing film. In an embodiment, the method comprises flowing a precursor gas into a processing chamber. For example the precursor gas comprises carbon containing molecules. In an embodiment, the method further comprises flowing a co-reactant gas into the processing chamber. In an embodiment, the method further comprises striking a plasma in the processing chamber. In an embodiment plasma activated co-reactant molecules initiate polymerization of the carbon containing molecules in the precursor gas. Embodiments may also include a method that further comprises depositing a carbon containing film onto a substrate in the processing chamber.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: April 20, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Lakmal Charidu Kalutarage, Mark Saly, David Thompson, William John Durand, Kelvin Chan, Hanhong Chen, Philip Allan Kraus
  • Patent number: 10957532
    Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: March 23, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ning Li, Zhelin Sun, Mihaela Balseanu, Li-Qun Xia, Bhaskar Jyoti Bhuyan, Mark Saly
  • Patent number: 10943780
    Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol. These methods do not oxidize the underlying metal layer.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: March 9, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Li-Qun Xia
  • Publication number: 20210062341
    Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-? films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) or general formula (II) wherein X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor; exposing the substrate to an oxidant; and purging the processing chamber of the oxidant.
    Type: Application
    Filed: August 26, 2019
    Publication date: March 4, 2021
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly
  • Publication number: 20210050211
    Abstract: Methods for depositing rhenium-containing thin films on a substrate are described. The substrate is exposed to a rhenium precursor and a reducing agent to form the rhenium-containing film (e.g., metallic rhenium, rhenium nitride, rhenium oxide, rhenium carbide). The exposures can be sequential or simultaneous. The rhenium-precursors are substantially free of halogen.
    Type: Application
    Filed: August 10, 2020
    Publication date: February 18, 2021
    Applicants: Applied Materials, Inc., Wayne State University
    Inventors: Thomas Knisley, Keenan N. Woods, Mark Saly, Charles H. Winter, Stefan Cwik
  • Publication number: 20210050212
    Abstract: Methods for deposition of high-hardness low-? dielectric films are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate, the precursor having the general formula (I) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), alkyl, alkoxy, vinyl, silane, amine, or halide; maintaining the substrate at a pressure in a range of about 0.1 mTorr and about 10 Torr and at a temperature in a range of about 200° C. to about 500° C.; and generating a plasma at a substrate level to deposit a dielectric film on the substrate.
    Type: Application
    Filed: August 10, 2020
    Publication date: February 18, 2021
    Applicant: Applied Materials, Inc.
    Inventors: William J. Durand, Mark Saly, Lakmal C. Kalutarage, Kang Sub Yim, Shaunak Mukherjee
  • Publication number: 20210047726
    Abstract: A method of forming a molybdenum film by oxidation and reduction is disclosed. A molybdenum oxide film is formed by CVD or ALD using a halide free organometallic molybdenum precursor. The molybdenum oxide film contains low amounts of carbon impurities. The molybdenum oxide film is reduced to form a highly pure molybdenum film. The molybdenum film has low resistance and properties similar to bulk molybdenum.
    Type: Application
    Filed: August 11, 2020
    Publication date: February 18, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Alexander Jansen, Mark Saly
  • Publication number: 20210032749
    Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.
    Type: Application
    Filed: July 29, 2020
    Publication date: February 4, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Cong Trinh, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Ning Li, Mark Saly, Bhaskar Jyoti Bhuyan, Keenan N. Woods, Lisa J. Enman