Patents by Inventor Mark Saly
Mark Saly has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20250250675Abstract: Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RIx, where R is one or more of a C1-C10 alkyl, C3-C10 cycloalkyl, C2-C10 alkenyl, or C2-C10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.Type: ApplicationFiled: March 24, 2025Publication date: August 7, 2025Applicant: Applied Materials, Inc.Inventors: Feng Q. Liu, Mark Saly, David Thompson, Annamalai Lakshmanan, Avgerinos V. Gelatos, Joung Joo Lee
-
Publication number: 20250230545Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.Type: ApplicationFiled: April 7, 2025Publication date: July 17, 2025Applicant: Applied Materials, Inc.Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Tobin Kaufman-Osborn, Kurt Fredrickson, Thomas Joseph Knisley, Liqi Wu
-
Publication number: 20250233015Abstract: Methods of manufacturing interconnect structures as part of a microelectronic device fabrication process are described. The methods include forming a dielectric layer including at least one feature defining a gap having sidewalls and a bottom on a substrate. The methods further include forming a blocking layer on the bottom by exposing the substrate to a blocking compound; selectively depositing a barrier layer on the sidewalls; selectively depositing a metal liner on the barrier layer on the sidewalls; removing the blocking layer; and performing a gap fill process to fill the gap with a gapfill material.Type: ApplicationFiled: January 14, 2025Publication date: July 17, 2025Applicant: Applied Materials, Inc.Inventors: Bhaskar Jyoti Bhuyan, Lisa J. Enman, Feng Q. Liu, Jeffrey W. Anthis, Mark Saly, Lakmal C. Kalutarage, Aaron Dangerfield, Jesus Candelario Mendoza-Gutierrez, Sze Chieh Tan
-
Publication number: 20250218867Abstract: Provided are methods of forming a semiconductor device. The method includes exposing a top surface of a substrate to a reactant and a metal precursor to selectively deposit a capping layer on the top surface of the substrate, the substrate comprising at least one feature formed in a dielectric layer, the dielectric layer defining a filled gap including sidewalls and a bottom, a barrier layer on the sidewalls of the filled gap, and a metal liner on the barrier layer, the capping layer depositing on one or more of the filled gap, the barrier layer, and the metal liner.Type: ApplicationFiled: December 29, 2023Publication date: July 3, 2025Applicant: Applied Materials, Inc.Inventors: Feng Q. Liu, Zheng Ju, Mark Saly, Zhiyuan Wu, Feng Chen
-
Publication number: 20250157855Abstract: Methods for selectively depositing a material on a dielectric surface relative to a metallic surface are disclosed. The metallic surface is protected with a self-assembled monolayer comprising an N-heterocyclic carbene prior to deposition of a liner or barrier layer on adjacent dielectric surfaces.Type: ApplicationFiled: November 7, 2024Publication date: May 15, 2025Applicant: Applied Materials, Inc.Inventors: Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Jesus Candelario Mendoza-Gutierrez, Mark Saly, Chandan Kr Bank, Andrea Leoncini, Wei Chun Lim, Sze Chieh Tan, Lisa J. Enman
-
Patent number: 12291779Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.Type: GrantFiled: October 17, 2023Date of Patent: May 6, 2025Assignee: Applied Materials, Inc.Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Tobin Kaufman-Osborn, Kurt Fredrickson, Thomas Knisley, Liqi Wu
-
Publication number: 20250132165Abstract: Methods of removing molybdenum oxide from a surface of a substrate comprise exposing the substrate having a molybdenum oxide layer on the substrate to a halide etchant having the formula RmSiX4-m, wherein m is an integer from 1 to 3, X is selected from iodine (I) and bromine (Br) and R is selected from the group consisting of a methyl group, ethyl group, propyl group, butyl group, cyclohexyl group and cyclopentyl group. The methods may be performed in a back-end-of-the line (BEOL) process, and the substrate contains a low-k dielectric material.Type: ApplicationFiled: October 20, 2023Publication date: April 24, 2025Applicant: Applied Materials, Inc.Inventors: Jiajie Cen, Feng Q. Liu, Zheng Ju, Zhiyuan Wu, Kevin Kashefi, Mark Saly, Xianmin Tang
-
Patent number: 12281387Abstract: Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RIx, where R is one or more of a C1-C10 alkyl, C3-C10 cycloalkyl, C2-C10 alkenyl, or C2-C10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.Type: GrantFiled: December 30, 2021Date of Patent: April 22, 2025Assignee: Applied Materials, Inc.Inventors: Feng Q. Liu, Mark Saly, David Thompson, Annamalai Lakshmanan, Avgerinos V. Gelatos, Joung Joo Lee
-
Patent number: 12281382Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.Type: GrantFiled: May 24, 2023Date of Patent: April 22, 2025Assignee: Applied Materials, Inc.Inventors: Lakmal C. Kalutarage, Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Feng Q. Liu, Mark Saly, Michael Haverty, Muthukumar Kaliappan
-
Publication number: 20250125195Abstract: Embodiments of the disclosure relate to methods using an oligomer film to protect a substrate surface. The oligomer film is formed on the substrate surface with a first feature and a second feature each having a feature depth. The first feature has a first critical dimension (CD) and the second feature has a second CD. The semiconductor substrate surface is exposed to one or more monomers to form the oligomer film, and the oligomer film forms selectively on the bottom and fills a portion of the feature depth. The oligomer film fills the feature depth to substantially the same or the same height in each of the first feature and the second feature. Methods of forming semiconductor devices using the oligomer film are also disclosed.Type: ApplicationFiled: October 11, 2023Publication date: April 17, 2025Applicant: Applied Materials, Inc.Inventors: Feng Q. Liu, Xinke Wang, Liqi Wu, Qihao Zhu, Mark Saly, Jiang Lu, John Sudijono, David Thompson
-
Patent number: 12272551Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.Type: GrantFiled: May 25, 2022Date of Patent: April 8, 2025Assignee: Applied Materials, Inc.Inventors: Liqi Wu, Feng Q. Liu, Bhaskar Jyoti Bhuyan, James Hugh Connolly, Zhimin Qi, Jie Zhang, Wei Dou, Aixi Zhang, Mark Saly, Jiang Lu, Rongjun Wang, David Thompson, Xianmin Tang
-
Patent number: 12261049Abstract: Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.Type: GrantFiled: June 9, 2022Date of Patent: March 25, 2025Assignee: Applied Materials , Inc.Inventors: David Thompson, Bhaskar Jyoti Bhuyan, Mark Saly, Lisa Enman, Aaron Dangerfield, Jesus Candelario Mendoza, Jeffrey W. Anthis, Lakmal Kalutarage
-
Publication number: 20250006555Abstract: Embodiments of the disclosure relate to methods of selectively depositing a metal after use of a flowable polymer to protect a substrate surface within a feature. A first metal layer is deposited by physical vapor deposition (PVD). The semiconductor substrate surface is exposed to one or more monomers to form a flowable and flexible polymer film on the first metal layer within the at least one feature. The flowable polymer film forms on the first metal layer on the bottom. The one or more monomers are selected from one or more of amines with bi-functional groups, aldehydes with bi-functional groups, cyanates with bi-functional groups, ketones with bi-functional groups, and alcohols with bi-functional groups. At least a portion of the first metal layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed.Type: ApplicationFiled: June 29, 2023Publication date: January 2, 2025Applicant: Applied Materials, Inc.Inventors: Feng Q. Liu, Xinke Wang, Liqi Wu, Qihao Zhu, Bhaskar Jyoti Bhuyan, Mark Saly, David Thampson
-
Publication number: 20250006485Abstract: Embodiments of the disclosure relate to methods of selectively depositing polysilicon after forming a flowable polymer film to protect a substrate surface within a feature. A first silicon (Si) layer is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first silicon (Si) layer on the bottom. A portion of the first silicon (Si) layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, a second silicon (Si) layer is selectively deposited on the first silicon (Si) layer to fill the feature. In some embodiments, the remaining portion of the first silicon (Si) layer on the bottom is oxidized to form a first silicon oxide (SiOx) layer on the bottom, and a silicon (Si) layer or a second silicon oxide (SiOx) layer is deposited on the first silicon oxide (SiOx) layer.Type: ApplicationFiled: June 29, 2023Publication date: January 2, 2025Applicant: Applied Materials, Inc.Inventors: Mark Saly, Feng Q. Liu, Bhaskar Jyoti Bhuyan, Jeffrey W. Anthis, David Thompson
-
Patent number: 12131900Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.Type: GrantFiled: July 26, 2022Date of Patent: October 29, 2024Assignee: Applied Materials, Inc.Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Lakmal C. Kalutarage, Thomas Joseph Knisley
-
Publication number: 20240355675Abstract: Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. The methods include exposing a substrate with a metal surface, a dielectric surface and an aluminum oxide surface or an aluminum nitride surface to a blocking molecule, such as a boron-containing compound, to form the blocking layer selectively on the metal surface over the dielectric surface and one of the aluminum oxide surface or the aluminum nitride surface.Type: ApplicationFiled: April 9, 2024Publication date: October 24, 2024Applicant: Applied Materials, Inc.Inventors: Muthukumar Kaliappan, Yong Jin Kim, Carmen Leal Cervantes, Bhaskar Jyoti Bhuyan, Xiangjin Xie, Michael Haverty, Kevin Kashefi, Mark Saly, Aaron Dangerfield, Jesus Candelario Mendoza-Gutierrez
-
Publication number: 20240343748Abstract: Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: June 14, 2024Publication date: October 17, 2024Applicants: Applied Materials, Inc., National University of SingaporeInventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan
-
Publication number: 20240339358Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM has a general formula I to XIX, wherein R, R?, R1, R2, R3, R4, and R5 are independently selected from hydrogen (H), alkyl, alkene, alkyne, and aryl, n is from 1 to 20, m is from 1 to 20, x is from 1 to 2, and y is from 1 to 2. A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.Type: ApplicationFiled: April 7, 2023Publication date: October 10, 2024Applicant: Applied Materials, Inc.Inventors: Jesus Candelario Mendoza-Gutierrez, Aaron Dangerfield, Bhaskar Jyoti Bhuyan, Mark Saly, Yang Zhou, Yong Jin Kim, Carmen Leal Cervantes, Ge Qu, Zhiyuan Wu, Feng Chen, Kevin Kashefi
-
Patent number: 12110584Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.Type: GrantFiled: June 28, 2021Date of Patent: October 8, 2024Assignee: Applied Materials, Inc.Inventors: Chandan Das, Susmit Singha Roy, Bhaskar Jyoti Bhuyan, John Sudijono, Abhijit Basu Mallick, Mark Saly
-
Publication number: 20240332014Abstract: Molecular layer deposition (MLD) is used to provide conformal and uniform doping technology for HAR and reentrant structures. MLD is used to deposit a conformal carbon-based film that contains a doping element. Thermal annealing is then used to make the doping element diffuse into the semiconductor material. For HAR structures, a conformal layer is used with low temperature doping, precise control, and the carbon-based film can be easily removed during doping or after doping. The amount of doping can be controlled by changing the thickness of MLD carbon-based film.Type: ApplicationFiled: March 22, 2024Publication date: October 3, 2024Applicants: Applied Materials, Inc., National University of SingaporeInventors: Xinke Wang, Long Liu, Mark Saly, Bhaskar Jyoti Bhuyan, Jiecong Tang, John Sudijono