Abstract: Methods for the deposition of SiN films comprising cyclical exposure of a substrate surface to a silicon halide comprising one or more of bromine and/or iodine halogens and a nitrogen-containing reactant. Some embodiments further comprise the incorporation of an argon plasma exposure prior to at least the first silicon halide exposure.

Abstract: Provided are silacyclopropane-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a silacyclopropane-based precursor and a co-reagent in various combinations.

Abstract: Provided are methods of depositing silicon-containing films utilizing certain precursors at temperatures of 400° C. or higher. Certain methods comprise exposing a substrate surface to a silicon precursor and another precursor to achieve various films. Examples of silicon-containing films which can be deposited include SiN, SiC, SiO2, SiCN, etc.

Abstract: Atomic layer deposition methods for the low temperature deposition of silicon dioxide films having low nitrogen content and low wet etch rates. Silicon dioxide films are deposited and treated with plasma and re-oxidized resulting in low nitrogen content films.

Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

Abstract: Provided are silacyclopropane-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a silacyclopropane-based precursor and a co-reagent in various combinations.

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

Abstract: Methods for the deposition of a silicon-containing film using an organic reactant, a silicon precursor and a plasma.

Abstract: Molybdenum complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The molybdenum complexes correspond in structure to Formula (I) and Formula (II), wherein R1, R3, R5, R7, R8 and R10 are independently and at each occurrence alkyl; R2, R6 and R9 are independently alkyl; R4 and R11 are independently and at each occurrence selected from the group consisting of alkyl, alkenyl, and alkynyl; x, z, a, c, d and f are independently zero, 1, or 2; y, b and e are independently zero or 1; and n and m are independently zero to 5.

Abstract: Provided are silacyclopropane-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a silacyclopropane-based precursor and a co-reagent in various combinations.

Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for forming a dielectric film. In one embodiment, the method includes placing a plurality of substrates inside a processing chamber and performing a sequence of exposing the substrates to a first reactive gas comprising silicon, and then exposing the substrates to a plasma of a second reactive gas comprising nitrogen and at least one of oxygen or carbon, and repeating the sequence to form the dielectric film comprising silicon carbon nitride or silicon carbon oxynitride on each of the substrates.

Abstract: Provided are silacyclopropane-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a silacyclopropane-based precursor and a co-reagent in various combinations.

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

Abstract: Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted ?3-allyl)(carbonyl)metal complexes.

Abstract: Molybdenum complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The molybdenum complexes correspond in structure to Formula (I) and Formula (II), wherein R1, R3, R5, R7, R8 and R10 are independently and at each occurrence alkyl; R2, R6 and R9 are independently alkyl; R4 and R11 are independently and at each occurrence selected from the group consisting of alkyl, alkenyl, and alkynyl; x, z, a, c, d and f are independently zero, 1, or 2; y, b and e are independently zero or 1; and n and m are independently zero to 5.

Abstract: Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted ?3-allyl)(carbonyl)metal complexes.