Patents by Inventor Mark W. Utlaut

Mark W. Utlaut has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10366860
    Abstract: An x-ray target, a method of using the x-ray target, and a computer program product with instructions for carrying out a method of using the x-ray target. The x-ray target includes a substrate made from a soft x-ray producing material and a high aspect ratio structure made from a hard x-ray producing material. The hard x-ray producing material is embedded in the substrate, formed on the substrate, cantilevered out from the edge of the substrate, or any combination thereof. The high aspect ratio structure comprises a plurality of high aspect ratio structures arranged in one or more grids or arrays, and the high aspect ratio structures in one of the one or more grids or arrays are arranged to form a Hadamard matrix structure.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: July 30, 2019
    Assignee: FEI Company
    Inventors: N. William Parker, Mark W. Utlaut, Laurens Franz Taemsz Kwakman, Thomas G. Miller
  • Publication number: 20180190467
    Abstract: An x-ray target, a method of using the x-ray target, and a computer program product with instructions for carrying out a method of using the x-ray target. The x-ray target includes a substrate made from a soft x-ray producing material and a high aspect ratio structure made from a hard x-ray producing material. The hard x-ray producing material is embedded in the substrate, formed on the substrate, cantilevered out from the edge of the substrate, or any combination thereof. The high aspect ratio structure comprises a plurality of high aspect ratio structures arranged in one or more grids or arrays, and the high aspect ratio structures in one of the one or more grids or arrays are arranged to form a Hadamard matrix structure.
    Type: Application
    Filed: February 21, 2018
    Publication date: July 5, 2018
    Applicant: FEI Company
    Inventors: N. William Parker, Mark W. Utlaut, Laurens Franz Taemsz Kwakman, Thomas G. Miller
  • Patent number: 9934930
    Abstract: An x-ray target, a method of using the x-ray target, and a computer program product with instructions for carrying out a method of using the x-ray target. The x-ray target includes a substrate made from a soft x-ray producing material and a high aspect ratio structure made from a hard x-ray producing material. The hard x-ray producing material is embedded in the substrate, formed on the substrate, cantilevered out from the edge of the substrate, or any combination thereof. The high aspect ratio structure comprises a plurality of high aspect ratio structures arranged in one or more grids or arrays, and the high aspect ratio structures in one of the one or more grids or arrays are arranged to form a Hadamard matrix structure.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: April 3, 2018
    Assignee: FEI Company
    Inventors: N. William Parker, Mark W. Utlaut, Laurens Franz Taemsz Kwakman, Thomas G. Miller
  • Patent number: 9733164
    Abstract: A system for creating a substantially planar face in a substrate, the system including directing one or more beams at a first surface of a substrate to remove material from a first location, the beam being offset from a normal to the first surface by a curtaining angle; sweeping the one or more beams in a plane that is perpendicular to the first surface to mill one or more initial cuts, the initial cuts exposing a second surface that is substantially perpendicular to the first surface; rotating the substrate about an axis other than an axis normal to the first beam or parallel to the first beam; directing the first beam at the second surface to remove additional material from the substrate without changing the curtaining angle; and scanning the one or more beams in across the second surface to mill one or more finishing cuts.
    Type: Grant
    Filed: June 11, 2012
    Date of Patent: August 15, 2017
    Assignee: FEI Company
    Inventors: Andrew B. Wells, N. William Parker, Clive D. Chandler, Mark W. Utlaut
  • Patent number: 9591735
    Abstract: An inductively-coupled plasma source for a focused charged particle beam system includes a plasma chamber and a fluid that is not actively pumped surrounding the plasma chamber for providing high voltage isolation between the plasma chamber and nearby parts which are at ground potential, such as a conductive shield. One or more cooling devices cool the plasma chamber by using evaporative cooling and heat pipes to dissipate the heat from the plasma chamber into a surrounding environment.
    Type: Grant
    Filed: June 21, 2012
    Date of Patent: March 7, 2017
    Assignee: FEI COMPANY
    Inventors: Sean Kellogg, Andrew B. Wells, James B. McGinn, N. William Parker, Mark W. Utlaut
  • Publication number: 20170002467
    Abstract: An improved process control for a charged beam system is provided that allows the capability of accurately producing complex two and three dimensional structures from a computer generated model in a material deposition process. The process control actively monitors the material deposition process and makes corrective adjustments as necessary to produce a pattern or structure that is within an acceptable tolerance range with little or no user intervention. The process control includes a data base containing information directed to properties of a specific pattern or structure and uses an algorithm to instruct the beam system during the material deposition process. Feedback through various means such as image recognition, chamber pressure readings, and EDS signal can be used to instruct the system to make automatic system modifications, such as, beam and gas parameters, or other modifications to the pattern during a material deposition run.
    Type: Application
    Filed: July 4, 2016
    Publication date: January 5, 2017
    Applicant: FEI Company
    Inventors: Marcus Straw, Chad Rue, Steven Randolph, Aurelien Philippe Jean Maclou Botman, Clive D. Chandler, Mark W. Utlaut
  • Patent number: 9530625
    Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.
    Type: Grant
    Filed: June 9, 2015
    Date of Patent: December 27, 2016
    Assignee: FEI COMPANY
    Inventors: Sean Kellogg, Anthony Graupera, William N. Parker, Andrew B. Wells, Mark W. Utlaut, Walter Skoczylas, Gregory A. Schwind, Noel Smith, Shouyin Zhang
  • Patent number: 9494516
    Abstract: A method and system for the imaging and localization of fluorescent markers such as fluorescent proteins or quantum dots within biological samples is disclosed. The use of recombinant genetics technology to insert “reporter” genes into many species is well established. In particular, green fluorescent proteins (GFPs) and their genetically-modified variants ranging from blue to yellow, are easily spliced into many genomes at the sites of genes of interest (GoIs), where the GFPs are expressed with no apparent effect on the functioning of the proteins of interest (PoIs) coded for by the GoIs. One goal of biologists is more precise localization of PoIs within cells. The invention is a method and system for enabling more rapid and precise PoI localization using charged particle beam-induced damage to GFPs. Multiple embodiments of systems for implementing the method are presented, along with an image processing method relatively immune to high statistical noise levels.
    Type: Grant
    Filed: May 26, 2015
    Date of Patent: November 15, 2016
    Assignee: FEI COMPANY
    Inventors: N. William Parker, Mark W. Utlaut
  • Patent number: 9401262
    Abstract: The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.
    Type: Grant
    Filed: May 12, 2015
    Date of Patent: July 26, 2016
    Assignee: FEI COMPANY
    Inventors: Noel Smith, Clive D. Chandler, Mark W. Utlaut, Paul P. Tesch, David William Tuggle
  • Publication number: 20150369737
    Abstract: A method and system for the imaging and localization of fluorescent markers such as fluorescent proteins or quantum dots within biological samples is disclosed. The use of recombinant genetics technology to insert “reporter” genes into many species is well established. In particular, green fluorescent proteins (GFPs) and their genetically-modified variants ranging from blue to yellow, are easily spliced into many genomes at the sites of genes of interest (GoIs), where the GFPs are expressed with no apparent effect on the functioning of the proteins of interest (PoIs) coded for by the GoIs. One goal of biologists is more precise localization of PoIs within cells. The invention is a method and system for enabling more rapid and precise PoI localization using charged particle beam-induced damage to GFPs. Multiple embodiments of systems for implementing the method are presented, along with an image processing method relatively immune to high statistical noise levels.
    Type: Application
    Filed: May 26, 2015
    Publication date: December 24, 2015
    Inventors: William Parker, Mark W. Utlaut
  • Publication number: 20150357166
    Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.
    Type: Application
    Filed: June 9, 2015
    Publication date: December 10, 2015
    Applicant: FEI Company
    Inventors: Sean Kellogg, Anthony Graupera, William N. Parker, Andrew B. Wells, Mark W. Utlaut, Walter Skoczylas, Gregory A. Schwind, Noel Smith, Shouyin Zhang
  • Patent number: 9204036
    Abstract: An apparatus to permit a viewer of a digital microscopy original image to manipulate the display and/or the microscope to obtain an enhanced view of a region of interest within the original image. In one preferred embodiment a spotlight mode matches the gray shade scale for a spotlight region-of-interest to the pixel intensity variation present in the spotlight region. The gray shade scale used for the spotlight mode may then be generalized to the original image. In a preferred embodiment, spotlight mode provides an easy mechanism for permitting a user to command a re-imaging of a selected spotlight region from a displayed image. Such re-imaging may permit the use of imaging parameter selections that better fit the spotlight region.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: December 1, 2015
    Assignee: FEI Company
    Inventors: Alan Bahm, N. William Parker, Mark W. Utlaut
  • Publication number: 20150318140
    Abstract: The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.
    Type: Application
    Filed: May 12, 2015
    Publication date: November 5, 2015
    Applicant: FEI Company
    Inventors: Noel Smith, Clive D. Chandler, Mark W. Utlaut, Paul P. Tesch, David William Tuggle
  • Publication number: 20150303021
    Abstract: An x-ray target, a method of using the x-ray target, and a computer program product with instructions for carrying out a method of using the x-ray target. The x-ray target includes a substrate made from a soft x-ray producing material and a high aspect ratio structure made from a hard x-ray producing material. The hard x-ray producing material is embedded in the substrate, formed on the substrate, cantilevered out from the edge of the substrate, or any combination thereof. The high aspect ratio structure comprises a plurality of high aspect ratio structures arranged in one or more grids or arrays, and the high aspect ratio structures in one of the one or more grids or arrays are arranged to form a Hadamard matrix structure.
    Type: Application
    Filed: March 12, 2015
    Publication date: October 22, 2015
    Applicant: FEI Company
    Inventors: N. William Parker, Mark W. Utlaut, Laurens Franz Taemsz Kwakman, Thomas G. Miller
  • Patent number: 9159534
    Abstract: An openable gas passage provides for rapid pumpout of process or bake out gases in an inductively coupled plasma source in a charged particle beam system. A valve, typically positioned in the source electrode or part of the gas inlet, increases the gas conductance when opened to pump out the plasma chamber and closes during operation of the plasma source.
    Type: Grant
    Filed: January 20, 2014
    Date of Patent: October 13, 2015
    Assignee: FEI Company
    Inventors: Anthony Graupera, Sean Kellogg, Mark W. Utlaut, N. William Parker
  • Patent number: 9053895
    Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: June 9, 2015
    Assignee: FEI COMPANY
    Inventors: Sean Kellogg, Anthony Graupera, N. William Parker, Andrew B. Wells, Mark W. Utlaut, Walter Skoczylas, Gregory A. Schwind, Shouyin Zhang, Noel Smith
  • Patent number: 9044781
    Abstract: Methods of dispensing a small amount of liquid onto a work piece includes in some embodiments known providing a microscopic channel for the liquid to flow from the nanodispenser. In some embodiments, dispensing the liquid includes dispensing the liquid using a nanodispenser have at least one slit extending to the tip. Some methods include controlling the rate of evaporation or the rate of liquid flow to establish an equilibrium producing a bubble of a desired size.
    Type: Grant
    Filed: December 4, 2012
    Date of Patent: June 2, 2015
    Assignee: FEI COMPANY
    Inventors: Aurélien Philippe Jean Maclou Botman, Steven Randolph, Mark W. Utlaut
  • Patent number: 9040909
    Abstract: A method and system for the imaging and localization of fluorescent markers such as fluorescent proteins or quantum dots within biological samples is disclosed. The use of recombinant genetics technology to insert “reporter” genes into many species is well established. In particular, green fluorescent proteins (GFPs) and their genetically-modified variants ranging from blue to yellow, are easily spliced into many genomes at the sites of genes of interest (GoIs), where the GFPs are expressed with no apparent effect on the functioning of the proteins of interest (PoIs) coded for by the GoIs. One goal of biologists is more precise localization of PoIs within cells. The invention is a method and system for enabling more rapid and precise PoI localization using charged particle beam-induced damage to GFPs. Multiple embodiments of systems for implementing the method are presented, along with an image processing method relatively immune to high statistical noise levels.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: May 26, 2015
    Assignee: FEI Company
    Inventors: N. William Parker, Mark W. Utlaut
  • Patent number: 9029812
    Abstract: The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.
    Type: Grant
    Filed: April 8, 2014
    Date of Patent: May 12, 2015
    Assignee: Fei Company
    Inventors: Noel Smith, Clive D. Chandler, Mark W. Utlaut, Paul P. Tesch, David William Tuggle
  • Publication number: 20150102230
    Abstract: An inductively-coupled plasma source for a focused charged particle beam system includes a plasma chamber and a fluid that is not actively pumped surrounding the plasma chamber for providing high voltage isolation between the plasma chamber and nearby parts which are at ground potential, such as a conductive shield. One or more cooling devices cool the plasma chamber by using evaporative cooling and heat pipes to dissipate the heat from the plasma chamber into a surrounding environment.
    Type: Application
    Filed: June 21, 2012
    Publication date: April 16, 2015
    Applicant: FEI Company
    Inventors: Sean Kellogg, Andrew B. Wells, James B. Mcginn, N. William Parker, Mark W. Utlaut