Patents by Inventor Mark W. Utlaut

Mark W. Utlaut has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120261587
    Abstract: An inductively-coupled plasma source for a focused charged particle beam system includes a conductive shield that provides improved electrical isolation and reduced capacitive RF coupling and a dielectric fluid that insulates and cools the plasma chamber. The conductive shield may be enclosed in a solid dielectric media. The dielectric fluid may be circulated by a pump or not circulated by a pump. A heat tube can be used to cool the dielectric fluid.
    Type: Application
    Filed: April 2, 2012
    Publication date: October 18, 2012
    Applicant: FEI Company
    Inventors: Sean Kellogg, N. William Parker, Mark W. Utlaut, Anthony Graupera
  • Patent number: 8283629
    Abstract: A mass filter for an ion beam system includes at least two stages and reduces chromatic aberration. One embodiment includes two symmetrical mass filter stages, the combination of which reduces or eliminates chromatic aberration, and entrance and exit fringing field errors. Embodiments can also prevent neutral particles from reaching the sample surface and avoid crossovers in the beam path. In one embodiment, the filter can pass a single species of ion from a source that produces multiple species. In other embodiments, the filter can pass a single ion species with a range of energies and focus the multi-energetic ions at the same point on the substrate surface.
    Type: Grant
    Filed: April 19, 2011
    Date of Patent: October 9, 2012
    Assignee: FEI Company
    Inventors: David Tuggle, N. William Parker, Mark W. Utlaut
  • Publication number: 20120193530
    Abstract: A method and system for the imaging and localization of fluorescent markers such as fluorescent proteins or quantum dots within biological samples is disclosed. The use of recombinant genetics technology to insert “reporter” genes into many species is well established. In particular, green fluorescent proteins (GFPs) and their genetically-modified variants ranging from blue to yellow, are easily spliced into many genomes at the sites of genes of interest (GoIs), where the GFPs are expressed with no apparent effect on the functioning of the proteins of interest (PoIs) coded for by the GoIs. One goal of biologists is more precise localization of PoIs within cells. The invention is a method and system for enabling more rapid and precise PoI localization using charged particle beam-induced damage to GFPs. Multiple embodiments of systems for implementing the method are presented, along with an image processing method relatively immune to high statistical noise levels.
    Type: Application
    Filed: January 30, 2011
    Publication date: August 2, 2012
    Applicant: FEI COMPANY
    Inventors: N. William Parker, Mark W. Utlaut
  • Publication number: 20110272592
    Abstract: An inductively-coupled plasma source for a focused charged particle beam system includes a conductive shield that provides improved electrical isolation and reduced capacitive RF coupling and a dielectric fluid that insulates and cools the plasma chamber. The conductive shield may be enclosed in a solid dielectric media. The dielectric fluid may be circulated by a pump or not circulated by a pump. A heat tube can be used to cool the dielectric fluid.
    Type: Application
    Filed: June 21, 2011
    Publication date: November 10, 2011
    Applicant: FEI Company
    Inventors: Sean Kellogg, Andrew B. Wells, James B. McGinn, N. William Parker, Mark W. Utlaut, Anthony Graupera
  • Publication number: 20110248164
    Abstract: A combined laser and charged particle beam system. A pulsed laser enables milling of a sample at material removal rates several orders of magnitude larger than possible for a focused ion beam. In some embodiments, a scanning electron microscope enables high resolution imaging of the sample during laser processing. In some embodiments, a focused ion beam enables more precise milling of the sample. A method and structure for deactivating the imaging detectors during laser milling enables the removal of imaging artifacts arising from saturation of the detector due to a plasma plume generated by the laser beam. In some embodiments, two types of detectors are employed: type-1 detectors provide high gain imaging during scanning of the sample with an electron or ion beam, while type-2 detectors enable lower gain imaging and endpoint detection during laser milling.
    Type: Application
    Filed: April 7, 2011
    Publication date: October 13, 2011
    Applicant: FEI COMPANY
    Inventors: Marcus Straw, Mark W. Utlaut, N. William Parker
  • Publication number: 20090309018
    Abstract: The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.
    Type: Application
    Filed: July 16, 2007
    Publication date: December 17, 2009
    Applicant: Fei Company
    Inventors: Noel Smith, Clive D. Chandler, Mark W. Utlaut, Paul P. Tesch, Dave Tuggle
  • Patent number: 7009187
    Abstract: A particle detector switchable from an ion detector to an electron detector includes an ion-to-electron converter and a scintillator detector. With one set of voltages on the components, the converter has minimal impact on the electron trajectories so the electrons are efficiently detected by the scintillator detector. With different voltage settings on the components, the detector can be operated in positive ion mode to collect positive ions with adequate efficiency for most FIB applications.
    Type: Grant
    Filed: June 26, 2003
    Date of Patent: March 7, 2006
    Assignee: FEI Company
    Inventors: Robert L. Gerlach, Mark W. Utlaut, Trevor Dingle, Marek Uncovsky
  • Patent number: 6977386
    Abstract: The present invention provides improved angular aperture schemes for generating shaped beam spots having a desired geometric shape from rectangular, elliptical, and semi-elliptical apertures having one sharp edge. A sharper beam edge can be generated by offsetting the rectangular or elliptical aperture in combination with under or over focus. In the spherical aberration limit, under-focused semi-circle apertures provide a sharp, flat edge. The sharp edge can be made resolute enough for precision milling applications, and at the same time, the spot can be made large enough with enough overall current and current density to efficiently mill away material in either a production or laboratory environment. Depending on the particular beam spot that is desired, combinations of techniques including defocusing, aperture offsetting, and stigmation adjustment, can be used in both spherical aberration dominant and chromatic aberration dominant environments to achieve a desired beam for a desired application.
    Type: Grant
    Filed: October 17, 2003
    Date of Patent: December 20, 2005
    Assignee: FEI Company
    Inventors: Robert L. Gerlach, Mark W. Utlaut
  • Patent number: 6949756
    Abstract: A method and apparatus for providing a shaped ion beam having low current density and sharp edges. The low current density and sharp edges eliminate the problem of overmilling, while permitting rapid ion beam processing. One method of producing the shaped beam is by using a two lens system, the first lens imaging the source onto the plane of the second lens and the second lens forming an image of the aperture onto the target plane. Another method is to greatly underfocus a chromatic aberration limited beam. Large beams having uniform current density and sharp edges can be produced. A knife edge beam, having a sharp edge can also be produced.
    Type: Grant
    Filed: January 19, 2001
    Date of Patent: September 27, 2005
    Assignee: FEI Company
    Inventors: Robert L. Gerlach, Mark W. Utlaut, Paul P. Tesch, Richard J. Young, Clive D. Chandler, Karl D. van der Mast
  • Patent number: 6900447
    Abstract: A system including co-axial focused ion beam and an electron beam allows for accurate processing with the FIB using images formed by the electron beam. In one embodiment, a deflector deflects the electron beam onto the axis of the ion beam and deflects secondary particles collected through the final lens toward a detector. In one embodiment, a positively biased final electrostatic lens focuses both beams using the same voltage to allow simultaneous or alternating FIB and SEM operation. In one embodiment, the landing energy of the electrons can be varied without changing the working distance.
    Type: Grant
    Filed: August 6, 2003
    Date of Patent: May 31, 2005
    Assignee: FEI Company
    Inventors: Robert L. Gerlach, Mark W. Utlaut, Michael R. Scheinfein
  • Publication number: 20040262531
    Abstract: A particle detector switchable from an ion detector to an electron detector includes an ion-to-electron converter and a scintillator detector. With one set of voltages on the components, the converter has minimal impact on the electron trajectories so the electrons are efficiently detected by the scintillator detector. With different voltage settings on the components, the detector can be operated in positive ion mode to collect positive ions with adequate efficiency for most FIB applications.
    Type: Application
    Filed: June 26, 2003
    Publication date: December 30, 2004
    Inventors: Robert L. Gerlach, Mark W. Utlaut, Trevor Dingle, Marek Uncovsky
  • Patent number: 6797969
    Abstract: A multi-gun FIB system for nanofabrication provides increased throughput at reduced cost while maintaining resolution. Multiple guns are maintained in modular gun chambers that can be vacuum isolated from the primary vacuum chamber containing the targets. A system can include multiple gun chambers, each of which van include multiple guns, with each gun chamber being capable of being vacuum isolated, so that each gun chamber can be removed and replaced without disturbing the vacuum in other gun chambers or in the main chamber. An optical column is associated with each gun. Optical elements for multiple columns can be formed in a bar that extends into several columns. Some of the optical elements are positioned in the gun chambers and others are positioned in the primary vacuum chamber. A through-the-lens secondary particle collection can be used in connection with each of the individual columns.
    Type: Grant
    Filed: February 8, 2001
    Date of Patent: September 28, 2004
    Assignee: FEI Company
    Inventors: Robert L. Gerlach, Paul P. Tesch, Lynwood W. Swanson, Mark W. Utlaut
  • Publication number: 20040140438
    Abstract: The present invention provides improved angular aperture schemes for generating shaped beam spots having a desired geometric shape from rectangular, elliptical, and semi-elliptical apertures having one sharp edge. A sharper beam edge can be generated by offsetting the rectangular or elliptical aperture in combination with under or over focus. In the spherical aberration limit, under-focused semi-circle apertures provide a sharp, flat edge. The sharp edge can be made resolute enough for precision milling applications, and at the same time, the spot can be made large enough with enough overall current and current density to efficiently mill away material in either a production or laboratory environment. Depending on the particular beam spot that is desired, combinations of techniques including defocusing, aperture offsetting, and stigmation adjustment, can be used in both spherical aberration dominant and chromatic aberration dominant environments to achieve a desired beam for a desired application.
    Type: Application
    Filed: October 17, 2003
    Publication date: July 22, 2004
    Inventors: Robert L. Gerlach, Mark W. Utlaut
  • Publication number: 20040108458
    Abstract: A system including co-axial focused ion beam and an electron beam allows for accurate processing with the FIB using images formed by the electron beam. In one embodiment, a deflector deflects the electron beam onto the axis of the ion beam and deflects secondary particles collected through the final lens toward a detector. In one embodiment, a positively biased final electrostatic lens focuses both beams using the same voltage to allow simultaneous or alternating FIB and SEM operation. In one embodiment, the landing energy of the electrons can be varied without changing the working distance.
    Type: Application
    Filed: August 6, 2003
    Publication date: June 10, 2004
    Inventors: Robert L. Gerlach, Mark W. Utlaut, Michael R. Scheinfein
  • Patent number: 6683320
    Abstract: An electron source provides electrons that are directed through the final lens of an ion optical column to neutralize at least a portion of the accumulated charge on a sample. The invention can optionally be combined with collection of secondary electrons through the final ion lens. A deflector directs the neutralizing electrons onto the ion beam optical axis and deflects the secondary electrons away from the optical axis for detection. For imaging, a high-pass energy filter separates secondary electrons generated from the neutralizing electron beam from secondary electrons generated by the ion beam.
    Type: Grant
    Filed: May 16, 2001
    Date of Patent: January 27, 2004
    Assignee: FEI Company
    Inventors: Robert L. Gerlach, Mark W. Utlaut
  • Publication number: 20020134949
    Abstract: An electron source provides electrons that are directed through the final lens of the ion optical column to neutralize at least a portion of the accumulated charge on the sample. The invention can optionally be combined with collection of secondary electrons through the final ion lens. A deflector directs the neutralizing electrons onto the ion beam optical axis and deflects the secondary electrons away from the optical axis for detection. For imaging, a high-pass energy filter separates secondary electrons generated from the neutralizing electron beam from secondary electrons generated by the ion beam.
    Type: Application
    Filed: May 16, 2001
    Publication date: September 26, 2002
    Inventors: Robert L. Gerlach, Mark W. Utlaut
  • Publication number: 20010045525
    Abstract: A method and apparatus for providing a shaped ion beam having low current density and sharp edges. The low current density and sharp edges eliminate the problem of overmilling, while permitting rapid ion beam processing. One method of producing the shaped beam is by using a two lens system, the first lens imaging the source onto the plane of the second lens and the second lens forming an image of the aperture onto the target plane. Another method is to greatly underfocus a chromatic aberration limited beam. Large beams having uniform current density and sharp edges can be produced. A knife edge beam, having a sharp edge can also be produced.
    Type: Application
    Filed: January 19, 2001
    Publication date: November 29, 2001
    Inventors: Robert L. Gerlach, Mark W. Utlaut, Paul P. Tesch, Richard J. Young, Clive D. Chandler, Karl D. van der Mast
  • Publication number: 20010032938
    Abstract: Secondary particles are collected along the optical axis of a focused ion beam system, thereby eliminating the need for side-mounted detectors that make close packing of multiple columns difficult and that require the final lens to be spaced further away from the target. Secondary particles can be collected through the lens and then diverted away from the optical axis of the ion column for detection without significantly degrading the resolution of the focused ion beam. Secondary particles can also be collected using a conductive plate connected to an amplifier to detect the electrical current caused by the secondary particles.
    Type: Application
    Filed: February 8, 2001
    Publication date: October 25, 2001
    Inventors: Robert L. Gerlach, Mark W. Utlaut
  • Publication number: 20010032939
    Abstract: A multi-gun FIB system for nanofabrication provides increased throughput at reduced cost while maintaining resolution. Multiple guns are maintained in modular gun chambers that can be vacuum isolated from the primary vacuum chamber containing the targets. A system can include multiple gun chambers, each of which can include multiple guns, with each gun chamber being capable of being vacuum isolated, so that each gun chamber can be removed and replaced without disturbing the vacuum in other gun chambers or in the main chamber.
    Type: Application
    Filed: February 8, 2001
    Publication date: October 25, 2001
    Inventors: Robert L. Gerlach, Paul Tesch, Lynwood W. Swanson, Mark W. Utlaut
  • Patent number: 5871848
    Abstract: A binary, boron-based alloy as a source for field-emission-type, ion-beam generating devices, wherein boron predominates in the alloy, preferably with a presence of about 60 atomic percent. The other constituent in the alloy is selected from the group of elements consisting of nickel, palladium and platinum. Predominance of boron in these alloys, during operation, promotes combining of boron with trace impurities of carbon in the alloys to form B.sub.4 C and thus to promote wetting of an associated carbon support substrate.
    Type: Grant
    Filed: October 6, 1997
    Date of Patent: February 16, 1999
    Assignee: Oregon Graduate Institute of Science & Technology
    Inventors: Michael J. Bozack, Lynwood W. Swanson, Anthony E. Bell, William M. Clark Jr., Mark W. Utlaut, Edmund K. Storms