Patents by Inventor Markku Leskelä

Markku Leskelä has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS FOR DEPOSITING A TRANSITION METAL CHALCOGENIDE FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS
    Publication number: 20210005450
    Abstract: Systems for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.
    Type: Application
    Filed: September 22, 2020
    Publication date: January 7, 2021
    Inventors: Miika Mattinen, Mikko Ritala, Markku Leskelä
  • Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
    Patent number: 10847366
    Abstract: Methods for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: November 24, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Miika Mattinen, Mikko Ritala, Markku Leskelä
  • METHOD OF FORMING A TRANSITION METAL CONTAINING FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS, A METHOD FOR SUPPLYING A TRANSITION METAL HALIDE COMPOUND TO A REACTION CHAMBER, AND RELATED VAPOR DEPOSITION APPARATUS
    Publication number: 20200340113
    Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.
    Type: Application
    Filed: July 13, 2020
    Publication date: October 29, 2020
    Inventors: Timo Hatanpää, Katja Väyrynen, Mikko Ritala, Markku Leskelä
  • ATOMIC LAYER DEPOSITION OF RHENIUM CONTAINING THIN FILMS
    Publication number: 20200340114
    Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.
    Type: Application
    Filed: March 31, 2020
    Publication date: October 29, 2020
    Inventors: Jani Hamalainen, Mikko Ritala, Markku Leskela
  • SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAINING THIN FILMS
    Publication number: 20200291518
    Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.
    Type: Application
    Filed: March 31, 2020
    Publication date: September 17, 2020
    Inventors: Viljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
    Patent number: 10741403
    Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.
    Type: Grant
    Filed: November 5, 2019
    Date of Patent: August 11, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Katja Väyrynen, Mikko Ritala, Markku Leskelä
  • Method for depositing a metal chalcogenide on a substrate by cyclical deposition
    Patent number: 10734223
    Abstract: A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: August 4, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Miika Mattinen, Mikko Ritala, Markku Leskelä
  • Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
    Patent number: 10731249
    Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: August 4, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Timo Hatanpää, Katja Väyrynen, Mikko Ritala, Markku Leskelä
  • METHODS OF FORMING A TRANSITION METAL CONTAINING FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS
    Publication number: 20200232096
    Abstract: Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 ??-cm at a film thickness of less than 50 nanometers.
    Type: Application
    Filed: January 7, 2020
    Publication date: July 23, 2020
    Inventors: Timo Hatanpää, Katja Väyrynen, Mikko Ritala, Markku Leskelä
  • METHODS FOR DEPOSITING A TRANSITION METAL CHALCOGENIDE FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS
    Publication number: 20200161129
    Abstract: Methods for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.
    Type: Application
    Filed: November 16, 2018
    Publication date: May 21, 2020
    Inventors: Miika Mattinen, Mikko Ritala, Markku Leskelä
  • Atomic layer deposition of rhenium containing thin films
    Patent number: 10619242
    Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: April 14, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Jani Hamalainen, Mikko Ritala, Markku Leskela
  • Synthesis and use of precursors for ALD of group VA element containing thin films
    Patent number: 10619244
    Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.
    Type: Grant
    Filed: February 6, 2019
    Date of Patent: April 14, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Viljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • METHODS FOR FORMING A METALLIC FILM ON A SUBSTRATE BY CYCLICAL DEPOSITION AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20200083054
    Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.
    Type: Application
    Filed: November 5, 2019
    Publication date: March 12, 2020
    Inventors: Katja Väyrynen, Mikko Ritala, Markku Leskelä
  • PRECURSORS AND METHODS FOR ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDES
    Publication number: 20190382887
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Application
    Filed: July 2, 2019
    Publication date: December 19, 2019
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
    Patent number: 10468261
    Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.
    Type: Grant
    Filed: February 15, 2017
    Date of Patent: November 5, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Katja Väyrynen, Mikko Ritala, Markku Leskelä
  • Methods for forming a metallic film on a substrate by a cyclical deposition and related semiconductor device structures
    Patent number: 10468262
    Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: November 5, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Katja Väyrynen, Mikko Ritala, Markku Leskelä
  • SYNTHESIS AND USE OF PRECURSORS FOR VAPOR DEPOSITION OF TUNGSTEN CONTAINING THIN FILMS
    Publication number: 20190300468
    Abstract: Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.
    Type: Application
    Filed: June 7, 2019
    Publication date: October 3, 2019
    Inventors: Timo Hatanpää, Miika Mattinen, Mikko Ritala, Markku Leskelä
  • METHOD FOR DEPOSITING A METAL CHALCOGENIDE ON A SUBSTRATE BY CYCLICAL DEPOSITION
    Publication number: 20190272993
    Abstract: A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.
    Type: Application
    Filed: May 21, 2019
    Publication date: September 5, 2019
    Inventors: Miika Mattinen, Mikko Ritala, Markku Leskelä
  • SYNTHESIS AND USE OF PRECURSORS FOR ALD OF TELLURIUM AND SELENIUM THIN FILMS
    Publication number: 20190263848
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Application
    Filed: May 8, 2019
    Publication date: August 29, 2019
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • METHODS FOR FORMING A METALLIC FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20190252196
    Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.
    Type: Application
    Filed: April 26, 2019
    Publication date: August 15, 2019
    Inventors: Katja Väyrynen, Mikko Ritala, Markku Leskelä