Patents by Inventor Markku Leskelä

Markku Leskelä has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Synthesis and use of precursors for ALD of tellurium and selenium thin films
    Patent number: 9783563
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: October 10, 2017
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • Atomic layer deposition of metal phosphates and lithium silicates
    Patent number: 9765431
    Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: September 19, 2017
    Assignee: ASM IP HOLDING B.V.
    Inventors: Jani Hamalainen, Jani Holopainen, Timo Hatanpaa, Mikko Ritala, Markku Leskela
  • PRECURSORS AND METHODS FOR ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDES
    Publication number: 20170253966
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Application
    Filed: May 18, 2017
    Publication date: September 7, 2017
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • Precursors and methods for atomic layer deposition of transition metal oxides
    Patent number: 9677173
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: June 13, 2017
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • Methods for forming conductive titanium oxide thin films
    Patent number: 9646820
    Abstract: The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: May 9, 2017
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Viljami Pore, Mikko Ritala, Markku Leskela
  • VAPOR DEPOSITION OF LiF THIN FILMS
    Publication number: 20160369397
    Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.
    Type: Application
    Filed: June 17, 2016
    Publication date: December 22, 2016
    Inventors: Miia Mäntymäki, Jani Hämäläinen, Mikko Ritala, Markku Leskelä
  • Method for producing SOFC cathode diffusion barrier layer and a SOFC
    Publication number: 20160333476
    Abstract: The invention provides an improved method for producing cathode diffusion barrier layer, and a SOFC with high efficiency and longevity. It comprises depositing a pure ceria or aliovalently doped ceria layer, by ALD, on the electrolyte layer of the sintered half cell. The surface of a electrolyte onto which film is to be deposited is exposed to a dose of vapor from one or more lanthanide first precursors. Any excess of unreacted vapor from that precursor is removed. Next, a vapor dose of the second precursor is brought to the surface and allowed to react. A second purge completes the ALD cycle, which is repeated to build up thicker films. This ceria layer forms a cathode diffusion barrier layer on top of which a cobaltite based cathode layer is applied by screenprinting, and the cathode diffusion barrier layer and cathode layer are heated together to form a SOFC.
    Type: Application
    Filed: January 14, 2014
    Publication date: November 17, 2016
    Inventors: Enn ÖUNPUU, Juhan SUBBI, Sanni SEPPÄLÄ, Jaakko NIINISTÖ, Markku LESKELÄ, Mikko RITALA
  • ATOMIC LAYER DEPOSITION OF METAL PHOSPHATES AND LITHIUM SILICATES
    Publication number: 20160265110
    Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.
    Type: Application
    Filed: March 17, 2016
    Publication date: September 15, 2016
    Inventors: Jani Hamalainen, Jani Holopainen, Timo Hatanpaa, Mikko Ritala, Markku Leskela
  • PRECURSORS AND METHODS FOR ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDES
    Publication number: 20160258054
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Application
    Filed: May 18, 2016
    Publication date: September 8, 2016
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAINING THIN FILMS
    Publication number: 20160222515
    Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.
    Type: Application
    Filed: April 12, 2016
    Publication date: August 4, 2016
    Inventors: Viljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • Atomic layer deposition of aluminum fluoride thin films
    Patent number: 9394609
    Abstract: Methods are provided for depositing thin films by vapor deposition using two different metal halide reactants. In some embodiments aluminum fluoride thin films are deposited by atomic layer deposition methods in which a substrate is alternately and sequentially contacted with a first metal halide reactant comprising aluminum, such as AlCl3, and a second metal halide reactant comprising fluorine, such as TiF4.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: July 19, 2016
    Assignee: ASM IP HOLDING B.V.
    Inventors: Miia Mäntymäki, Mikko Ritala, Markku Leskelä
  • Vapor deposition of LiF thin films
    Patent number: 9382615
    Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: July 5, 2016
    Assignee: ASM IP HOLDING B.V.
    Inventors: Miia Mäntymäki, Jani Hämäläinen, Mikko Ritala, Markku Leskelä
  • Precursors and methods for atomic layer deposition of transition metal oxides
    Patent number: 9365926
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: June 14, 2016
    Assignee: ASM International N.V.
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • Atomic layer deposition of metal phosphates and lithium silicates
    Patent number: 9315894
    Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: April 19, 2016
    Assignee: ASM IP HOLDING B.V.
    Inventors: Jani Hamalainen, Jani Holopainen, Timo Hatanpaa, Mikko Ritala, Markku Leskela
  • Synthesis and use of precursors for ALD of group VA element containing thin films
    Patent number: 9315896
    Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.
    Type: Grant
    Filed: October 25, 2010
    Date of Patent: April 19, 2016
    Assignee: ASM IP HOLDING B.V.
    Inventors: Viljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • SYNTHESIS AND USE OF PRECURSORS FOR ALD OF TELLURIUM AND SELENIUM THIN FILMS
    Publication number: 20160031919
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Application
    Filed: October 13, 2015
    Publication date: February 4, 2016
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • Microcontact printed films as an activation layer for selective atomic layer deposition
    Patent number: 9223203
    Abstract: The present application relates to methods of forming patterned thin films on a substrate. In some embodiments a first patterned layer may be deposited on a substrate by a imprint lithography technique, such as microcontact printing. A second layer of a desired composition is selectively deposited over the first patterned layer by a vapor phase deposition process, such as ALD or CVD.
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: December 29, 2015
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Elina Färm, Seppo Lindroos, Mikko Ritala, Markku Leskelä
  • Synthesis and use of precursors for ALD of tellurium and selenium thin films
    Patent number: 9175390
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Grant
    Filed: April 23, 2009
    Date of Patent: November 3, 2015
    Assignee: ASM International N.V.
    Inventors: Viljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • Process for producing oxide films
    Patent number: 9169557
    Abstract: Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.
    Type: Grant
    Filed: May 10, 2010
    Date of Patent: October 27, 2015
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Timo Hatanpaa, Marko Vehkamaki, Mikko Ritala, Markku Leskela
  • ATOMIC LAYER DEPOSITION OF ALUMINUM FLUORIDE THIN FILMS
    Publication number: 20150225853
    Abstract: Methods are provided for depositing thin films by vapor deposition using two different metal halide reactants. In some embodiments aluminum fluoride thin films are deposited by atomic layer deposition methods in which a substrate is alternately and sequentially contacted with a first metal halide reactant comprising aluminum, such as AlCl3, and a second metal halide reactant comprising fluorine, such as TiF4.
    Type: Application
    Filed: February 12, 2015
    Publication date: August 13, 2015
    Inventors: Miia Mäntymäki, Mikko Ritala, Markku Leskelä