Patents by Inventor Markku Leskela

Markku Leskela has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CYCLIC DEPOSITION METHODS FOR FORMING METAL-CONTAINING MATERIAL AND FILMS AND STRUCTURES INCLUDING THE METAL-CONTAINING MATERIAL
    Publication number: 20210269914
    Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.
    Type: Application
    Filed: June 21, 2019
    Publication date: September 2, 2021
    Inventors: Katja Väyrynen, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • SYNTHESIS AND USE OF PRECURSORS FOR VAPOR DEPOSITION OF TUNGSTEN CONTAINING THIN FILMS
    Publication number: 20210246095
    Abstract: Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.
    Type: Application
    Filed: April 29, 2021
    Publication date: August 12, 2021
    Inventors: Timo Hatanpää, Miika Mattinen, Mikko Ritala, Markku Leskelä
  • Synthesis and use of precursors for ALD of tellurium and selenium thin films
    Patent number: 11072622
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: July 27, 2021
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • Synthesis and use of precursors for ALD of molybdenum or tungsten containing thin films
    Patent number: 11047042
    Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: June 29, 2021
    Assignee: ASM IP HOLDING B.V.
    Inventors: Tiina McKee, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • Vapor deposition of thin films comprising gold
    Patent number: 11047046
    Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: June 29, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Maarit Mäkelä, Timo Hatanpää, Mikko Rítala, Markku Leskelä
  • METHODS FOR FILLING A GAP FEATURE ON A SUBSTRATE SURFACE AND RELATED SEMICONDUCTOR STRUCTURES
    Publication number: 20210193458
    Abstract: A method for filling a gap feature on a substrate surface is disclosed. The method may include: providing a substrate comprising a non-planar surface including one or more gap features; depositing a metal oxide film over a surface of the one or more gap features by a cyclical deposition process; contacting the metal oxide with an organic ligand vapor; and converting at least a portion of the metal oxide film to a porous material thereby filling the one or more gap features. Semiconductor structures including a metal-organic framework material formed by the methods of the disclosure are also disclosed.
    Type: Application
    Filed: December 7, 2020
    Publication date: June 24, 2021
    Inventors: Leo Salmi, Mikko Ritala, Markku Leskelä
  • SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAINING THIN FILMS
    Publication number: 20210164101
    Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.
    Type: Application
    Filed: February 11, 2021
    Publication date: June 3, 2021
    Inventors: Viljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • Synthesis and use of precursors for vapor deposition of tungsten containing thin films
    Patent number: 11014866
    Abstract: Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: May 25, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Timo Hatanpää, Miika Mattinen, Mikko Ritala, Markku Leskelä
  • Synthesis and use of precursors for ALD of group VA element containing thin films
    Patent number: 10941487
    Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.
    Type: Grant
    Filed: March 31, 2020
    Date of Patent: March 9, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Viljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • METHODS AND APPARATUS FOR DEPOSITING A CHALCOGENIDE FILM AND STRUCTURES INCLUDING THE FILM
    Publication number: 20210066080
    Abstract: Methods for depositing group 5 chalcogenides on a substrate are disclosed. The methods include cyclical deposition techniques, such as atomic layer deposition. The group 5 chalcogenides can be two-dimensional films having desirable electrical properties.
    Type: Application
    Filed: August 31, 2020
    Publication date: March 4, 2021
    Inventors: Miika Mattinen, Mikko Ritala, Markku Leskelä
  • METHODS FOR FORMING A METALLIC FILM ON A SUBSTRATE BY CYCLICAL DEPOSITION AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20210013042
    Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.
    Type: Application
    Filed: July 23, 2020
    Publication date: January 14, 2021
    Inventors: Katja Väyrynen, Mikko Ritala, Markku Leskelä
  • METHODS FOR DEPOSITING A TRANSITION METAL CHALCOGENIDE FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS
    Publication number: 20210005450
    Abstract: Systems for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.
    Type: Application
    Filed: September 22, 2020
    Publication date: January 7, 2021
    Inventors: Miika Mattinen, Mikko Ritala, Markku Leskelä
  • Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
    Patent number: 10847366
    Abstract: Methods for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: November 24, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Miika Mattinen, Mikko Ritala, Markku Leskelä
  • METHOD OF FORMING A TRANSITION METAL CONTAINING FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS, A METHOD FOR SUPPLYING A TRANSITION METAL HALIDE COMPOUND TO A REACTION CHAMBER, AND RELATED VAPOR DEPOSITION APPARATUS
    Publication number: 20200340113
    Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.
    Type: Application
    Filed: July 13, 2020
    Publication date: October 29, 2020
    Inventors: Timo Hatanpää, Katja Väyrynen, Mikko Ritala, Markku Leskelä
  • ATOMIC LAYER DEPOSITION OF RHENIUM CONTAINING THIN FILMS
    Publication number: 20200340114
    Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.
    Type: Application
    Filed: March 31, 2020
    Publication date: October 29, 2020
    Inventors: Jani Hamalainen, Mikko Ritala, Markku Leskela
  • SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAINING THIN FILMS
    Publication number: 20200291518
    Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.
    Type: Application
    Filed: March 31, 2020
    Publication date: September 17, 2020
    Inventors: Viljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
    Patent number: 10741403
    Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.
    Type: Grant
    Filed: November 5, 2019
    Date of Patent: August 11, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Katja Väyrynen, Mikko Ritala, Markku Leskelä
  • Method for depositing a metal chalcogenide on a substrate by cyclical deposition
    Patent number: 10734223
    Abstract: A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: August 4, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Miika Mattinen, Mikko Ritala, Markku Leskelä
  • Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
    Patent number: 10731249
    Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: August 4, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Timo Hatanpää, Katja Väyrynen, Mikko Ritala, Markku Leskelä
  • METHODS OF FORMING A TRANSITION METAL CONTAINING FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS
    Publication number: 20200232096
    Abstract: Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 ??-cm at a film thickness of less than 50 nanometers.
    Type: Application
    Filed: January 7, 2020
    Publication date: July 23, 2020
    Inventors: Timo Hatanpää, Katja Väyrynen, Mikko Ritala, Markku Leskelä