Patents by Inventor Markku Leskela

Markku Leskela has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vapor deposition of thin films comprising gold
    Patent number: 10145009
    Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: December 4, 2018
    Assignee: ASM IP HOLDING B.V.
    Inventors: Maarit Mäkelä, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • METHODS FOR FORMING A METALLIC FILM ON A SUBSTRATE BY CYCLICAL DEPOSITION AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20180233372
    Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.
    Type: Application
    Filed: February 15, 2017
    Publication date: August 16, 2018
    Inventors: Katja Väyrynen, Ritala Mikko, Markku Leskelä
  • VAPOR DEPOSITION OF THIN FILMS COMPRISING GOLD
    Publication number: 20180209041
    Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.
    Type: Application
    Filed: January 26, 2017
    Publication date: July 26, 2018
    Inventors: Maarit Mäkelä, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • ATOMIC LAYER DEPOSITION OF RHENIUM CONTAINING THIN FILMS
    Publication number: 20180155832
    Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.
    Type: Application
    Filed: November 30, 2017
    Publication date: June 7, 2018
    Inventors: Jani Hamalainen, Mikko Ritala, Markku Leskela
  • SYNTHESIS AND USE OF PRECURSORS FOR ALD OF MOLYBDENUM OR TUNGSTEN CONTAINING THIN FILMS
    Publication number: 20180127873
    Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.
    Type: Application
    Filed: May 24, 2016
    Publication date: May 10, 2018
    Inventors: Tiina Sarnet, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • SYNTHESIS AND USE OF PRECURSORS FOR VAPOR DEPOSITION OF TUNGSTEN CONTAINING THIN FILMS
    Publication number: 20180099916
    Abstract: Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.
    Type: Application
    Filed: October 10, 2017
    Publication date: April 12, 2018
    Inventors: Timo Hatanpää, Miika Mattinen, Mikko Ritala, Markku Leskelä
  • SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAINING THIN FILMS
    Publication number: 20180087154
    Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.
    Type: Application
    Filed: November 21, 2017
    Publication date: March 29, 2018
    Inventors: Viljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • SYNTHESIS AND USE OF PRECURSORS FOR ALD OF TELLURIUM AND SELENIUM THIN FILMS
    Publication number: 20180072764
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Application
    Filed: September 21, 2017
    Publication date: March 15, 2018
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • Vapor deposition of LiF thin films
    Patent number: 9909211
    Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: March 6, 2018
    Assignee: ASM IP HOLDING B.V.
    Inventors: Miia Mäntymäki, Jani Hämäläinen, Mikko Ritala, Markku Leskelä
  • Metamaterial thin films
    Patent number: 9878516
    Abstract: A metamaterial thin film with plasmonic properties formed by depositing metallic films by atomic layer deposition onto a substrate to form a naturally occurring mosaic-like nanostructure having two-dimensional features with air gaps between the two-dimensional features. Due to the unique deposition nanostructure, plasmonic thin films of metal or highly conducting materials can be produced on any substrate, including fabrics and biological materials. In addition, these plasmonic materials can be used in conjunction with geometric patterns that may be used to create multiple resonance plasmonic metamaterials.
    Type: Grant
    Filed: March 5, 2013
    Date of Patent: January 30, 2018
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Orest J. Glembocki, Sharka M Prokes, Joshua D. Caldwell, Mikko Ritala, Markku Leskela, Jaakko Niinisto, Eero Santala, Timo Hatanpaa, Maarit Kariemi
  • Synthesis and use of precursors for ALD of group VA element containing thin films
    Patent number: 9828674
    Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.
    Type: Grant
    Filed: April 12, 2016
    Date of Patent: November 28, 2017
    Assignee: ASM IP HOLDING B.V.
    Inventors: Viljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä
  • Synthesis and use of precursors for ALD of tellurium and selenium thin films
    Patent number: 9783563
    Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: October 10, 2017
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
  • Atomic layer deposition of metal phosphates and lithium silicates
    Patent number: 9765431
    Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: September 19, 2017
    Assignee: ASM IP HOLDING B.V.
    Inventors: Jani Hamalainen, Jani Holopainen, Timo Hatanpaa, Mikko Ritala, Markku Leskela
  • PRECURSORS AND METHODS FOR ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDES
    Publication number: 20170253966
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Application
    Filed: May 18, 2017
    Publication date: September 7, 2017
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • Precursors and methods for atomic layer deposition of transition metal oxides
    Patent number: 9677173
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: June 13, 2017
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
  • Methods for forming conductive titanium oxide thin films
    Patent number: 9646820
    Abstract: The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: May 9, 2017
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Viljami Pore, Mikko Ritala, Markku Leskela
  • VAPOR DEPOSITION OF LiF THIN FILMS
    Publication number: 20160369397
    Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.
    Type: Application
    Filed: June 17, 2016
    Publication date: December 22, 2016
    Inventors: Miia Mäntymäki, Jani Hämäläinen, Mikko Ritala, Markku Leskelä
  • Method for producing SOFC cathode diffusion barrier layer and a SOFC
    Publication number: 20160333476
    Abstract: The invention provides an improved method for producing cathode diffusion barrier layer, and a SOFC with high efficiency and longevity. It comprises depositing a pure ceria or aliovalently doped ceria layer, by ALD, on the electrolyte layer of the sintered half cell. The surface of a electrolyte onto which film is to be deposited is exposed to a dose of vapor from one or more lanthanide first precursors. Any excess of unreacted vapor from that precursor is removed. Next, a vapor dose of the second precursor is brought to the surface and allowed to react. A second purge completes the ALD cycle, which is repeated to build up thicker films. This ceria layer forms a cathode diffusion barrier layer on top of which a cobaltite based cathode layer is applied by screenprinting, and the cathode diffusion barrier layer and cathode layer are heated together to form a SOFC.
    Type: Application
    Filed: January 14, 2014
    Publication date: November 17, 2016
    Inventors: Enn ÖUNPUU, Juhan SUBBI, Sanni SEPPÄLÄ, Jaakko NIINISTÖ, Markku LESKELÄ, Mikko RITALA
  • ATOMIC LAYER DEPOSITION OF METAL PHOSPHATES AND LITHIUM SILICATES
    Publication number: 20160265110
    Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.
    Type: Application
    Filed: March 17, 2016
    Publication date: September 15, 2016
    Inventors: Jani Hamalainen, Jani Holopainen, Timo Hatanpaa, Mikko Ritala, Markku Leskela
  • PRECURSORS AND METHODS FOR ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDES
    Publication number: 20160258054
    Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Application
    Filed: May 18, 2016
    Publication date: September 8, 2016
    Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka