Abstract: The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.

Abstract: The present invention relates to a method for generating control data for the secondary machining of a solid body (1), in particular wafer, which is modified by means of laser beams (10). The interior of said solid body (1) has multiple modifications (12), said modifications (12) having been produced by means of laser beams (10).

Abstract: The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4).

Abstract: A method for producing microcracks in an interior of a composite structure includes: providing or producing the composite structure which has a solid body and at least one metallic coating and/or electrical components situated or provided on one side of the solid body, the solid body containing or being made of silicon carbide (SiC); and producing modifications in the interior of the solid body. Laser radiation is introduced into a flat surface of the solid body to cause multiphoton excitation which brings about plasma generation. The modifications are effected by the plasma in the form of a material transformation which generates compressive stresses in the solid body, thereby developing subcritical cracks in a surrounding area of a particular modification. The laser radiation is introduced into the solid body in pulses having an intensity which reaches a maximum within 10 ns after a start of a particular pulse.

Abstract: Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.

Abstract: According to claim 1, the invention relates to a method for providing at least one solid-body layer (4). The solid-body layer (4) is separated from a solid body (1).

Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.

Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.

Abstract: A method includes: providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines; generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; and separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.

Abstract: A method for producing a solid body layer having a domed or curved shape at least in sections includes: irradiating a surface of the solid body by laser beams emitted from a laser application device to produce a modified region within the solid body that includes modifications having an extension in a longitudinal direction of the solid body, the longitudinal extension extending orthogonally to the irradiated solid body surface, wherein the modifications are configured to guide a crack for detaching the solid body layer upon application of an external force; and enlarging the extension of the modified region in the longitudinal direction to increase stress produced by the modified region in unmodified material of the solid body, wherein enlarging the extension of the modified region in the longitudinal direction increases the probability of spontaneous splitting of the solid body layer from the solid body without application of the external force.

Abstract: A method of splitting a semiconductor wafer includes: forming one or more epitaxial layers on the semiconductor wafer; forming a plurality of device structures in the one or more epitaxial layers; forming a metallization layer and/or a passivation layer over the plurality of device structures; attaching a carrier to the semiconductor wafer with the one or more epitaxial layers, the carrier protecting the plurality of device structures and mechanically stabilizing the semiconductor wafer; forming a separation region within the semiconductor wafer, the separation region having at least one altered physical property which increases thermo-mechanical stress within the separation region relative to the remainder of the semiconductor wafer; and applying an external force to the semiconductor wafer such that at least one crack propagates along the separation region and the semiconductor wafer splits into two separate pieces, one of the pieces retaining the plurality of device structures.

Abstract: According to claim 1, the invention relates to a method for providing at least one solid-body layer (4). The solid-body layer (4) is separated from a solid body (1).

Abstract: A method for creating modifications in a solid-state material is described, wherein a crack guidance region for guiding a crack for separating a solid-state layer from the solid-state material is predetermined by the modifications. The method includes: moving the solid-state material relative to a laser processing system; successively emitting a plurality of laser beams from the laser processing system to the solid-state material to create at least one modification within the solid-state material; and continuously adjusting the laser processing system for defined focusing of the plurality of laser beams and/or for adjustment of energy of the plurality of laser beams as a function of at least one parameter.

Abstract: The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.

Abstract: A method of splitting a semiconductor wafer includes: forming one or more epitaxial layers on the semiconductor wafer; forming a plurality of device structures in the one or more epitaxial layers; forming a metallization layer and/or a passivation layer over the plurality of device structures; attaching a carrier to the semiconductor wafer with the one or more epitaxial layers, the carrier protecting the plurality of device structures and mechanically stabilizing the semiconductor wafer; forming a separation region within the semiconductor wafer, the separation region having at least one altered physical property which increases thermo-mechanical stress within the separation region relative to the remainder of the semiconductor wafer; and applying an external force to the semiconductor wafer such that at least one crack propagates along the separation region and the semiconductor wafer splits into two separate pieces, one of the pieces retaining the plurality of device structures.

Abstract: The invention relates to a method for separating solid-body slices (1) from a donor substrate (2).

Abstract: The present invention relates to a method for separating at least one solid-body layer (4) from at least one solid body (1). Thereby, the method as claimed in the invention comprises the steps: creating a plurality of modifications (9) by means of laser beams within the interior space of the solid body (1) to form a detachment plane (8), producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid body (1), wherein the exposed surface (5) is an integral part of the solid-body layer (4) to be separated, introducing an external force into the solid body (1) for generating tensions within the solid body (1), wherein the external force is so strong that the tensions initialize a crack propagation along the detachment plane (8), wherein the modifications for forming the detachment plane (8) are created before producing the composite structure.

Abstract: Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.

Abstract: The invention relates to a method for producing modifications (9) in the interior of a solid body (1). The method comprises the introduction of laser radiation (14) of a laser (29) into the interior of the solid body (1) via a first surface (8) of the solid body (1). The solid body (1) forms a crystal structure. Modifications (9) are produced at predefined points in a production plane (4) in the interior of the solid body (1) by the laser radiation (14). The modifications (9) are closer to the first surface (8) than to a second surface, the second surface being parallel to the first surface (8). A plurality of linear forms (103) can be produced by the modifications (9). The solid body (1) cracks subcritically in the region of each modification (9). The subcritical cracks have an average crack length of less than 150 ?m orthogonally to the direction of longitudinal extent of the linear form in question.

Abstract: The present invention therefore relates to a method for separating at least one solid body layer (2) from a donor substrate (1).