Patents by Inventor Marko Tuominen

Marko Tuominen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective deposition of metals, metal oxides, and dielectrics
    Patent number: 9895715
    Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: February 20, 2018
    Assignee: ASM IP HOLDING B.V.
    Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers
  • Selective formation of metallic films on metallic surfaces
    Patent number: 9679808
    Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
    Type: Grant
    Filed: January 5, 2016
    Date of Patent: June 13, 2017
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • VAPOR PHASE DEPOSITION OF ORGANIC FILMS
    Publication number: 20170100743
    Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.
    Type: Application
    Filed: March 15, 2016
    Publication date: April 13, 2017
    Inventors: Viljami J. Pore, Marko Tuominen, Hannu Huotari
  • VAPOR PHASE DEPOSITION OF ORGANIC FILMS
    Publication number: 20170100742
    Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.
    Type: Application
    Filed: October 9, 2015
    Publication date: April 13, 2017
    Inventors: VILJAMI J. PORE, MARKO TUOMINEN, HANNU HUOTARI
  • SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES
    Publication number: 20170069527
    Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
    Type: Application
    Filed: November 18, 2016
    Publication date: March 9, 2017
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Method of making a resistive random access memory
    Patent number: 9520562
    Abstract: The disclosed technology generally relates to semiconductor devices, and relates more particularly to resistive random access memory devices and methods of making the same. In one aspect, a method of forming a resistive random access memory cell of a random access memory device includes forming a first electrode and forming a resistive switching material comprising an oxide of a pnictogen element by atomic layer deposition. The method additionally includes forming a metallic layer comprising the pnictogen element by atomic layer deposition (ALD). The resistive switching material is interposed between the first electrode and the metallic layer.
    Type: Grant
    Filed: July 17, 2014
    Date of Patent: December 13, 2016
    Assignee: ASM IP Holding B.V.
    Inventors: Qi Xie, Jan Willem Maes, Tom Blomberg, Marko Tuominen, Suvi Haukka, Robin Roelofs, Jacob Woodruff
  • Method of growing oxide thin films
    Patent number: 9514956
    Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.
    Type: Grant
    Filed: November 1, 2010
    Date of Patent: December 6, 2016
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Eva Tois, Suvi Haukka, Marko Tuominen
  • Selective formation of metallic films on metallic surfaces
    Patent number: 9502289
    Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
    Type: Grant
    Filed: June 11, 2015
    Date of Patent: November 22, 2016
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Selective deposition of noble metal thin films
    Patent number: 9469899
    Abstract: Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.
    Type: Grant
    Filed: December 2, 2014
    Date of Patent: October 18, 2016
    Assignee: ASM International N.V.
    Inventors: Hannu Huotari, Marko Tuominen, Miika Leinikka
  • Method of making a resistive random access memory device
    Patent number: 9472757
    Abstract: The disclosed technology generally relates to the field of semiconductor processing and more particularly to resistive random access memory and methods for manufacturing such memory. In one aspect, a method of fabricating a memory cell includes providing a substrate and providing a first electrode on the substrate. The method additionally includes depositing, via atomic layer deposition, a resistive switching material on the first electrode, wherein the resistive switching material comprises an oxide comprising a pnictogen chosen from the group consisting of As, Bi, Sb, and P. The resistive switching material may be doped, e.g., with Sb or an antimony-metal alloy. A second electrode may be formed over and in contact with the resistive switching material.
    Type: Grant
    Filed: July 17, 2014
    Date of Patent: October 18, 2016
    Assignee: ASM IP Holding B.V.
    Inventors: Qi Xie, Jan Willem Maes, Tom Blomberg, Marko Tuominen, Suvi Haukka, Robin Roelofs, Jacob Woodruff
  • SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES
    Publication number: 20160276208
    Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
    Type: Application
    Filed: January 5, 2016
    Publication date: September 22, 2016
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Selective formation of metallic films on metallic surfaces
    Patent number: 9257303
    Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: February 9, 2016
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES
    Publication number: 20160005649
    Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
    Type: Application
    Filed: June 11, 2015
    Publication date: January 7, 2016
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • SELECTIVE DEPOSITION OF NOBLE METAL THIN FILMS
    Publication number: 20150315703
    Abstract: Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.
    Type: Application
    Filed: December 2, 2014
    Publication date: November 5, 2015
    Inventors: Hannu Huotari, Marko Tuominen, Miika Leinikka
  • DUAL SELECTIVE DEPOSITION
    Publication number: 20150299848
    Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.
    Type: Application
    Filed: April 15, 2015
    Publication date: October 22, 2015
    Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore
  • Selective formation of metallic films on metallic surfaces
    Patent number: 9112003
    Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: August 18, 2015
    Assignee: ASM International N.V.
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • SELECTIVE DEPOSITION OF METALS, METAL OXIDES, AND DIELECTRICS
    Publication number: 20150217330
    Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
    Type: Application
    Filed: February 3, 2015
    Publication date: August 6, 2015
    Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers
  • SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES
    Publication number: 20150187600
    Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
    Type: Application
    Filed: February 3, 2015
    Publication date: July 2, 2015
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Selective formation of metallic films on metallic surfaces
    Patent number: 8956971
    Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: February 17, 2015
    Assignee: ASM International N.V.
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • METHOD OF MAKING A RESISTIVE RANDOM ACCESS MEMORY DEVICE
    Publication number: 20150021540
    Abstract: The disclosed technology generally relates to the field of semiconductor processing and more particularly to resistive random access memory and methods for manufacturing such memory. In one aspect, a method of fabricating a memory cell includes providing a substrate and providing a first electrode on the substrate. The method additionally includes depositing, via atomic layer deposition, a resistive switching material on the first electrode, wherein the resistive switching material comprises an oxide comprising a pnictogen chosen from the group consisting of As, Bi, Sb, and P. The resistive switching material may be doped, e.g., with Sb or an antimony-metal alloy. A second electrode may be formed over and in contact with the resistive switching material.
    Type: Application
    Filed: July 17, 2014
    Publication date: January 22, 2015
    Inventors: Qi Xie, Jan Willem Maes, Tom Blomberg, Marko Tuominen, Suvi Haukka, Robin Roelofs, Jacob Woodruff