Patents by Inventor Markus Gerardus Martinus Maria Van Kraaij

Markus Gerardus Martinus Maria Van Kraaij has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10955353
    Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
    Type: Grant
    Filed: February 7, 2019
    Date of Patent: March 23, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cedric Desire Grouwstra, Markus Gerardus Martinus Maria Van Kraaij
  • Publication number: 20200356009
    Abstract: A method and apparatus of detection, registration and quantification of an image is described. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
    Type: Application
    Filed: July 30, 2020
    Publication date: November 12, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Scott Anderson MIDDLEBROOKS, Markus Gerardus Martinus Maria VAN KRAAIJ, Adrianus Cornelis Matheus KOOPMAN, Stefan HUNSCHE, Willem Marie Julia Marcel COENE
  • Publication number: 20200348605
    Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.
    Type: Application
    Filed: July 16, 2020
    Publication date: November 5, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Simon Gijsbert Josephus MATHIJSSEN, Stefan HUNSCHE, Markus Gerardus Martinus Maria VAN KRAAIJ
  • Publication number: 20200348244
    Abstract: A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.
    Type: Application
    Filed: January 8, 2019
    Publication date: November 5, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Nitish KUMAR, Richard QUINTANILHA, Markus Gerardus Martinus Maria VAN KRAAIJ, Konstantin TSIGUTKIN, Willem Marie Julia Marcel COENE
  • Patent number: 10795269
    Abstract: The disclosure relates to methods of determining a value of a parameter of interest of a patterning process, and of cleaning a signal containing information about the parameter of interest. In one arrangement, first and second detected representations of radiation are obtained. The radiation is provided by redirection of polarized incident radiation by a structure. The first and second detected representations are derived respectively from first and second polarization components of the redirected radiation. An asymmetry in the first detected representation comprises a contribution from the parameter of interest and a contribution from one or more other sources of asymmetry. An asymmetry in the second detected representation comprises a larger contribution from said one or more other sources of asymmetry relative to a contribution from the parameter of interest. A combination of the first and second detected representations is used to determine a value of the parameter of interest.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: October 6, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Zili Zhou, Gerbrand Van Der Zouw, Nitesh Pandey, Markus Gerardus Martinus Maria Van Kraaij, Martinus Hubertus Maria Van Weert, Anagnostis Tsiatmas, Sergey Tarabrin, Hilko Dirk Bos
  • Patent number: 10761432
    Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.
    Type: Grant
    Filed: April 24, 2018
    Date of Patent: September 1, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Simon Gijsbert Josephus Mathijssen, Stefan Hunsche, Markus Gerardus Martinus Maria Van Kraaij
  • Publication number: 20200257208
    Abstract: A defect prediction method for a device manufacturing process involving production substrates processed by a lithographic apparatus, the method including training a classification model using a training set including measured or determined values of a process parameter associated with the production substrates processed by the device manufacturing process and an indication regarding existence of defects associated with the production substrates processed in the device manufacturing process under the values of the process parameter, and producing an output from the classification model that indicates a prediction of a defect for a substrate.
    Type: Application
    Filed: April 17, 2020
    Publication date: August 13, 2020
    Inventors: Scott Anderson MIDDLEBROOKS, Willem Maria Julia Marcel COENE, Frank Arnoldus Johannes Maria DRIESSEN, Adrianus Cornelis Matheus KOOPMAN, Markus Gerardus Martinus Maria VAN KRAAIJ
  • Patent number: 10732513
    Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: August 4, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Scott Anderson Middlebrooks, Markus Gerardus Martinus Maria Van Kraaij, Adrianus Cornelis Matheus Koopman, Stefan Hunsche, Willem Marie Julia Marcel Coene
  • Patent number: 10725386
    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: July 28, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
  • Publication number: 20200202054
    Abstract: Parameters of a structure (900) are measured by reconstruction from observed diffracted radiation. The method includes the steps: (a) defining a structure model to represent the structure in a two- or three-dimensional model space; (b) using the structure model to simulate interaction of radiation with the structure; and (c) repeating step (b) while varying parameters of the structure model. The structure model is divided into a series of slices (a-f) along at least a first dimension (Z) of the model space. By the division into slices, a sloping face (904, 906) of at least one sub-structure is approximated by a series of steps (904?, 906?) along at least a second dimension of the model space (X). The number of slices may vary dynamically as the parameters vary. The number of steps approximating said sloping face is maintained constant. Additional cuts (1302, 1304) are introduced, without introducing corresponding steps.
    Type: Application
    Filed: March 2, 2020
    Publication date: June 25, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Remco DIRKS, Markus Gerardus Martinus Maria VAN KRAAIJ, Maxim PISARENCO
  • Patent number: 10649345
    Abstract: Methods and apparatuses for estimation of at least one parameter of interest of a feature fabricated on a substrate, the feature having a plurality of structure parameters, the structure parameters including the at least one parameter of interest and one or more nuisance parameters. A receiver receives radiation scattered from one or more measured features on the substrate. A pupil generator generates an unprocessed pupil representation of the received radiation. A matrix multiplier multiplies a transformation matrix with intensities of each of a plurality of pixels of the unprocessed pupil representation to determine a post-processed pupil representation in which effects of the one or more nuisance parameters are mitigated or removed. A parameter estimator estimates the at least one parameter of interest based on the post-processed pupil representation.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: May 12, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Maxim Pisarenco, Markus Gerardus Martinus Maria Van Kraaij, Sebastianus Adrianus Goorden
  • Patent number: 10627723
    Abstract: A defect prediction method for a device manufacturing process involving production substrates processed by a lithographic apparatus, the method including training a classification model using a training set including measured or determined values of a process parameter associated with the production substrates processed by the device manufacturing process and an indication regarding existence of defects associated with the production substrates processed in the device manufacturing process under the values of the process parameter, and producing an output from the classification model that indicates a prediction of a defect for a substrate.
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: April 21, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Scott Anderson Middlebrooks, Willem Maria Julia Marcel Coene, Frank Arnoldus Johannes Maria Driessen, Adrianus Cornelis Matheus Koopman, Markus Gerardus Martinus Maria Van Kraaij
  • Patent number: 10607334
    Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: March 31, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Scott Anderson Middlebrooks, Markus Gerardus Martinus Maria Van Kraaij, Maxim Pisarenco, Adrianus Cornelis Matheus Koopman, Stefan Hunsche, Willem Marie Julia Marcel Coene
  • Patent number: 10592618
    Abstract: Parameters of a structure (900) are measured by reconstruction from observed diffracted radiation. The method includes the steps: (a) defining a structure model to represent the structure in a two- or three-dimensional model space; (b) using the structure model to simulate interaction of radiation with the structure; and (c) repeating step (b) while varying parameters of the structure model. The structure model is divided into a series of slices (a-f) along at least a first dimension (Z) of the model space. By the division into slices, a sloping face (904, 906) of at least one sub-structure is approximated by a series of steps (904?, 906?) along at least a second dimension of the model space (X). The number of slices may vary dynamically as the parameters vary. The number of steps approximating said sloping face is maintained constant. Additional cuts (1302, 1304) are introduced, without introducing corresponding steps.
    Type: Grant
    Filed: July 13, 2016
    Date of Patent: March 17, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Remco Dirks, Markus Gerardus Martinus Maria Van Kraaij, Maxim Pisarenco
  • Publication number: 20190391498
    Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
    Type: Application
    Filed: September 5, 2019
    Publication date: December 26, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Scott Anderson MIDDLEBROOKS, Markus Gerardus Martinus Maria VAN KRAAIJ, Adrianus Cornelis Matheus KOOPMAN, Stefan HUNSCHE, Willem Marie Julia Marcel COENE
  • Publication number: 20190346775
    Abstract: A method of calculating electromagnetic scattering properties of a structure represented as a nominal structure and a structural perturbation, has the steps: 1008 numerically solving a volume integral equation comprising a nominal linear system 1004 to determine a nominal vector field being independent with respect to the structural perturbation; 1010 using a perturbed linear system 1006 to determine an approximation of a vector field perturbation arising from the structural perturbation, by solving a volume integral equation or an adjoint linear system. Matrix-vector multiplication of a nominal linear system matrix convolution operator may be restricted to sub-matrices; and 1012 calculating electromagnetic scattering properties of the structure using the determined nominal vector field and the determined approximation of the vector field perturbation.
    Type: Application
    Filed: April 25, 2019
    Publication date: November 14, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Markus Gerardus Martinus Maria VAN KRAAIJ, Maxim PISARENCO, Richard QUINTANILHA
  • Publication number: 20190310554
    Abstract: A method including: obtaining a logistic mathematical model predicting the formation of a physical structure created using a patterning process; evaluating the logistic mathematical model to predict formation of a part of the physical structure and generate an output; and adapting, based on the output, an aspect of the patterning process.
    Type: Application
    Filed: November 29, 2017
    Publication date: October 10, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Scott Anderson MIDDLEBROOKS, Adrianus Cornelis Matheus KOOPMAN, Markus Gerardus Martinus Maria VAN KRAAIJ, Maxim PISARENCO
  • Patent number: 10437157
    Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: October 8, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Scott Anderson Middlebrooks, Markus Gerardus Martinus Maria Van Kraaij, Adrianus Cornelis Matheus Koopman, Stefan Hunsche, Willem Marie Julia Marcel Coene
  • Publication number: 20190278190
    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
    Type: Application
    Filed: May 24, 2019
    Publication date: September 12, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Scott Anderson MIDDLEBROOKS, Niels GEYPEN, Hendrik Jan Hidde SMILDE, Alexander STRAAIJER, Maurits VAN DER SCHAAR, Markus Gerardus Martinus Maria VAN KRAAIJ
  • Publication number: 20190250094
    Abstract: An inspection apparatus, method, and system are described herein. An example inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, the illumination beam polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization. The inspection apparatus may be further configured to generate image data representing an image of each of the feature(s) based on the intensity data, and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.
    Type: Application
    Filed: February 6, 2019
    Publication date: August 15, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Nitesh PANDEY, Zili ZHOU, Gerbrand VAN DER ZOUW, Arie Jeffrey DEN BOEF, Markus Gerardus Martinus Maria VAN KRAAIJ, Armand Eugene Albert KOOLEN, Hugo Augustinus Joseph CRAMER, Paul Christiaan HINNEN, Martinus Hubertus Maria VAN WEERT, Anagnostis TSIATMAS, Shu-jin WANG, Bastiaan Onne FAGGINGER AUER, Alok VERMA