Patents by Inventor Markus Gerardus Martinus Maria Van Kraaij
Markus Gerardus Martinus Maria Van Kraaij has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190250094Abstract: An inspection apparatus, method, and system are described herein. An example inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, the illumination beam polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization. The inspection apparatus may be further configured to generate image data representing an image of each of the feature(s) based on the intensity data, and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.Type: ApplicationFiled: February 6, 2019Publication date: August 15, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Nitesh PANDEY, Zili ZHOU, Gerbrand VAN DER ZOUW, Arie Jeffrey DEN BOEF, Markus Gerardus Martinus Maria VAN KRAAIJ, Armand Eugene Albert KOOLEN, Hugo Augustinus Joseph CRAMER, Paul Christiaan HINNEN, Martinus Hubertus Maria VAN WEERT, Anagnostis TSIATMAS, Shu-jin WANG, Bastiaan Onne FAGGINGER AUER, Alok VERMA
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Patent number: 10331041Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: GrantFiled: October 15, 2018Date of Patent: June 25, 2019Assignee: ASML Netherlands B.V.Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
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Publication number: 20190129316Abstract: The disclosure relates to methods of determining a value of a parameter of interest of a patterning process, and of cleaning a signal containing information about the parameter of interest. In one arrangement, first and second detected representations of radiation are obtained. The radiation is provided by redirection of polarized incident radiation by a structure. The first and second detected representations are derived respectively from first and second polarization components of the redirected radiation. An asymmetry in the first detected representation comprises a contribution from the parameter of interest and a contribution from one or more other sources of asymmetry. An asymmetry in the second detected representation comprises a larger contribution from said one or more other sources of asymmetry relative to a contribution from the parameter of interest. A combination of the first and second detected representations is used to determine a value of the parameter of interest.Type: ApplicationFiled: October 25, 2018Publication date: May 2, 2019Applicant: ASML Netherlands B.V.Inventors: Zili ZHOU, Gerbrand VAN DER ZOUW, Nitesh PANDEY, Markus Gerardus Martinus Maria VAN KRAAIJ, Martinus Hubertus Maria VAN WEERT, Anagnostis TSIATMAS, Sergey TARABRIN, Hilko Dirk BOS
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Publication number: 20190049860Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: ApplicationFiled: October 15, 2018Publication date: February 14, 2019Applicant: ASML Netherlands B.V.Inventors: Scott Anderson MIDDLEBROOKS, Niels GEYPEN, Hendrik Jan Hidde SMILDE, Alexander STRAAIJER, Maurits VAN DER SCHAAR, Markus Gerardus Martinus Maria VAN KRAAIJ
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Patent number: 10146140Abstract: A structure of interest is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (306). A processor (308) calculates a property such as linewidth (CD) by simulating interaction of radiation with a structure and comparing the simulated interaction with the detected radiation. A layered structure model (600, 610) is used to represent the structure in a numerical method. The structure model defines for each layer of the structure a homogeneous background permittivity and for at least one layer a non-homogeneous contrast permittivity. The method uses Maxwell's equation in Born approximation, whereby a product of the contrast permittivity and the total field is approximated by a product of the contrast permittivity and the background field. A computation complexity is reduced by several orders of magnitude compared with known methods.Type: GrantFiled: October 4, 2016Date of Patent: December 4, 2018Assignee: ASML Netherlands B.V.Inventors: Maxim Pisarenco, Richard Quintanilha, Markus Gerardus Martinus Maria Van Kraaij
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Patent number: 10126662Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: GrantFiled: March 5, 2018Date of Patent: November 13, 2018Assignee: ASML Netherlands B.V.Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
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Publication number: 20180239263Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.Type: ApplicationFiled: April 24, 2018Publication date: August 23, 2018Applicant: ASML Netherlands B.V.Inventors: Simon Gijsbert Josephus Mathijssen, Stefan Hunsche, Markus Gerardus Martinus Maria Van Kraaij
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Publication number: 20180196357Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: ApplicationFiled: March 5, 2018Publication date: July 12, 2018Applicant: ASML Netherlands B.V.Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
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Publication number: 20180164229Abstract: Disclosed is a method for reconstructing a parameter of a lithographic process. The method comprises the step of designing a preconditioner suitable for an input system comprising the difference of a first matrix and a second matrix, the first matrix being arranged to have a multi-level structure of at least three levels whereby at least two of said levels comprise a Toeplitz structure. One such preconditioner is a block-diagonal matrix comprising a BTTB structure generated from a matrix-valued inverse generating function. A second such preconditioner is determined from an approximate decomposition of said first matrix into one or more Kronecker products.Type: ApplicationFiled: December 12, 2017Publication date: June 14, 2018Applicant: ASML Netherlands B.V.Inventors: Maxim Pisarenco, Frank Stefan Schneider, Markus Gerardus Martinus Maria Van Kraaij, Martijn Constant Van Beurden
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Patent number: 9958791Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.Type: GrantFiled: October 13, 2014Date of Patent: May 1, 2018Assignee: ASML Netherlands B.V.Inventors: Simon Gijsbert Josephus Mathijssen, Stefan Hunsche, Markus Gerardus Martinus Maria Van Kraaij
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Patent number: 9910366Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: GrantFiled: July 18, 2014Date of Patent: March 6, 2018Assignee: ASML Netherlands B.V.Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
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Publication number: 20170345138Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.Type: ApplicationFiled: November 13, 2015Publication date: November 30, 2017Applicant: ASML Netherlands B.V.Inventors: Scott Anderson MIDDLEBROOKS, Markus Gerardus Martinus Maria VAN KRAAIJ, Maxim PISARENCO, Adrianus Cornelis Matheus KOOPMAN, Stefan HUNSCHE, Willem Marie Julia Marcel COENE
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Publication number: 20170102623Abstract: A structure of interest is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (306). A processor (308) calculates a property such as linewidth (CD) by simulating interaction of radiation with a structure and comparing the simulated interaction with the detected radiation. A layered structure model (600, 610) is used to represent the structure in a numerical method. The structure model defines for each layer of the structure a homogeneous background permittivity and for at least one layer a non-homogeneous contrast permittivity. The method uses Maxwell's equation in Born approximation, whereby a product of the contrast permittivity and the total field is approximated by a product of the contrast permittivity and the background field. A computation complexity is reduced by several orders of magnitude compared with known methods.Type: ApplicationFiled: October 4, 2016Publication date: April 13, 2017Applicant: ASML Netherlands B.V.Inventors: Maxim PISARENCO, Richard QUINTANILHA, Markus Gerardus Martinus Maria VAN KRAAIJ
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Publication number: 20170017738Abstract: Parameters of a structure (900) are measured by reconstruction from observed diffracted radiation. The method includes the steps: (a) defining a structure model to represent the structure in a two- or three-dimensional model space; (b) using the structure model to simulate interaction of radiation with the structure; and (c) repeating step (b) while varying parameters of the structure model. The structure model is divided into a series of slices (a-f) along at least a first dimension (Z) of the model space. By the division into slices, a sloping face (904, 906) of at least one sub-structure is approximated by a series of steps (904?, 906?) along at least a second dimension of the model space (X). The number of slices may vary dynamically as the parameters vary. The number of steps approximating said sloping face is maintained constant. Additional cuts (1302, 1304) are introduced, without introducing corresponding steps.Type: ApplicationFiled: July 13, 2016Publication date: January 19, 2017Applicant: ASML Netherlands B.V.Inventors: Remco DIRKS, Markus Gerardus Martinus Maria Van Kraaij, Maxim Pisarenco
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Publication number: 20160313651Abstract: A defect prediction method for a device manufacturing process involving production substrates processed by a lithographic apparatus, the method including training a classification model using a training set including measured or determined values of a process parameter associated with the production substrates processed by the device manufacturing process and an indication regarding existence of defects associated with the production substrates processed in the device manufacturing process under the values of the process parameter, and producing an output from the classification model that indicates a prediction of a defect for a substrate.Type: ApplicationFiled: November 14, 2014Publication date: October 27, 2016Inventors: Scott Anderson MIDDLEBROOKS, Willem Maria Julia Marcel COENE, Frank Arnoldus Johannes Maria DRIESSEN, Adrianus Cornelis Matheus KOOPMAN, Markus Gerardus Martinus Maria VAN KRAAIJ
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Publication number: 20160274472Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.Type: ApplicationFiled: October 13, 2014Publication date: September 22, 2016Applicant: ASML NETHERLANDS B.V.Inventors: Simon Gijsbert Josephus MATHIJSSEN, Stefan HUNSCHE, Markus Gerardus Martinus Maria VAN KRAAIJ
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Publication number: 20160161864Abstract: Disclosed is a method of measuring a parameter of a litho-graphic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.Type: ApplicationFiled: July 18, 2014Publication date: June 9, 2016Applicant: ASML Netherlands B.V.Inventors: Scott Anderson MIDDLEBROOKS, Niels GEYPEN, Hendrik Jan Hidde SMILDE, Alexander STRAAIJER, Maurits VAN DER SCHAAR, Markus Gerardus Martinus Maria VAN KRAAIJ
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Patent number: 8760662Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.Type: GrantFiled: August 27, 2013Date of Patent: June 24, 2014Assignee: ASML Netherlands B.V.Inventors: Arie Jeffrey Den Boef, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cédric Désiré Grouwstra, Markus Gerardus Martinus Maria Van Kraaij
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Patent number: 8645109Abstract: Numerical calculation of electromagnetic scattering properties and structural parameters of periodic structures is disclosed. A reflection coefficient has a representation as a bilinear or sesquilinear form. Computations of reflection coefficients and their derivatives for a single outgoing direction can benefit from an adjoint-state variable. Because the linear operator is identical for all angles of incidence that contribute to the same outgoing wave direction, there exists a single adjoint-state variable that generates all reflection coefficients from all incident waves that contribute to the outgoing wave. This adjoint-state variable can be obtained by numerically solving a single linear system, whereas one otherwise would need to solve a number of linear systems equal to the number of angles of incidence.Type: GrantFiled: November 29, 2010Date of Patent: February 4, 2014Assignee: ASML Netherlands B.V.Inventors: Remco Dirks, Irwan Dani Setija, Markus Gerardus Martinus Maria Van Kraaij, Martijn Constant Van Beurden
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Publication number: 20110137625Abstract: Numerical calculation of electromagnetic scattering properties and structural parameters of periodic structures is disclosed. A reflection coefficient has a representation as a bilinear or sesquilinear form. Computations of reflection coefficients and their derivatives for a single outgoing direction can benefit from an adjoint-state variable. Because the linear operator is identical for all angles of incidence that contribute to the same outgoing wave direction, there exists a single adjoint-state variable that generates all reflection coefficients from all incident waves that contribute to the outgoing wave. This adjoint-state variable can be obtained by numerically solving a single linear system, whereas one otherwise would need to solve a number of linear systems equal to the number of angles of incidence.Type: ApplicationFiled: November 29, 2010Publication date: June 9, 2011Applicant: ASML Netherlands B.V.Inventors: Remco Dirks, Irwan Dani Setija, Markus Gerardus Martinus Maria Van Kraaij, Martijn Constant Van Beurden