Patents by Inventor Markus Gloeckler
Markus Gloeckler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240088319Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.Type: ApplicationFiled: November 13, 2023Publication date: March 14, 2024Applicant: First Solar, Inc.Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
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Publication number: 20240015992Abstract: Photovoltaic devices (100) with type ll-VI semiconductor absorber materials (160) having p-type contact layers (180) are obtained by forming a ll-VI absorber layer over a substrate stack (113), wherein the type II material includes cadmium (Cd) and the type VI material includes tellurium (Te); contacting an alkaline wash fluid, comprising a hydroxide, to a second surface of the absorber layer to produce a Cd-rich surface, depositing a p-type contact layer (180) over the absorber layer (160), whereby the p-type contact layer is directly adjacent to the Cd-rich layer, and wherein the p-type contact layer comprises at least one of: PTAA, P3HT, poly-TPD, TFB, TTF-1, TF8-TAA, TIF8-TAA, SGT-407, PCDTBT, SpiroOMeTAD, anthracene-based HTM, polythiophene, semiconducting polymers, NiO, CuSCN, or Cui; and depositing a conductive layer (190) over the p-type contact layer.Type: ApplicationFiled: December 1, 2021Publication date: January 11, 2024Applicant: First Solar, Inc.Inventors: Duyen Cao, Markus Gloeckler, Sachit Grover, James Hack, Chungho Lee, Dingyuan Lu, Aravamuthan Varadarajan, Gang Xiong, Zhibo Zhao
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Patent number: 11843070Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.Type: GrantFiled: December 4, 2020Date of Patent: December 12, 2023Assignee: First Solar, Inc.Inventors: Anke Abken, Markus Gloeckler, Roger T. Green, Akhlesh Gupta, Upali Jayamaha, Peter Meyers, Rick C. Powell
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Patent number: 11817516Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.Type: GrantFiled: October 25, 2019Date of Patent: November 14, 2023Assignee: First Solar, Inc.Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
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Publication number: 20220384668Abstract: Photovoltaic devices, and methods of making the same, are described. A photovoltaic device comprises a plurality of electrically connected photovoltaic cells, wherein the photovoltaic cells comprise a conducting layer having a first surface and a second surface, the first surface facing an absorber layer; an insulating material disposed on the second surface over at least one of the photovoltaic cells; a conductive member on the insulating material, wherein the insulating material is configured to electrically insulate the conductive member from the second surface; a bus member electrically coupled to the one of the plurality of photovoltaic cells and to the conductive member; and an edge seal comprising a sealant material extending over at least a portion of the one of the plurality of photovoltaic cells; wherein the bus member is disposed between the edge seal and the plurality of photovoltaic cells.Type: ApplicationFiled: October 23, 2020Publication date: December 1, 2022Applicant: First Solar, Inc.Inventors: Christopher DiRubio, Markus Gloeckler, Weixin Li, Richard Malik, Jr., Riley Maxwell, Jason Sharrer, Jigish Trivedi
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Patent number: 11450778Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr(=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.Type: GrantFiled: May 31, 2017Date of Patent: September 20, 2022Assignee: First Solar, Inc.Inventors: Kenneth Ring, William H. Huber, Hongying Peng, Markus Gloeckler, Gopal Mor, Feng Liao, Zhibo Zhao, Andrei Los
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Publication number: 20210091250Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.Type: ApplicationFiled: December 4, 2020Publication date: March 25, 2021Applicant: First Solar, Inc.Inventors: Anke Abken, Markus Gloeckler, Roger T. Green, Akhlesh Gupta, Upali Jayamaha, Peter Meyers, Rick C. Powell
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Patent number: 10861994Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.Type: GrantFiled: June 10, 2019Date of Patent: December 8, 2020Assignee: First Solar, Inc.Inventors: Anke Abken, Markus Gloeckler, Roger Green, Akhlesh Gupta, Upali Jayamaha, Peter Meyers, Rick Powell
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Publication number: 20200066928Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.Type: ApplicationFiled: October 28, 2019Publication date: February 27, 2020Applicant: First Solar, Inc.Inventors: Benyamin Buller, Markus Gloeckler, Akhlesh Gupta, Rick Powell, Rui Shao, Gang Xiong, Ming Lun Yu, Zhibo Zhao
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Publication number: 20200058818Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.Type: ApplicationFiled: October 25, 2019Publication date: February 20, 2020Applicant: First Solar, Inc.Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
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Patent number: 10529883Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.Type: GrantFiled: November 3, 2014Date of Patent: January 7, 2020Assignee: First Solar, Inc.Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
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Publication number: 20190363201Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr (=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.Type: ApplicationFiled: May 31, 2017Publication date: November 28, 2019Applicant: First Solar, Inc.Inventors: Kenneth Ring, William H. Huber, Hongying Peng, Markus Gloeckler, Gopal Mor, Feng Liao, Zhibo Zhao, Andrei Los
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Patent number: 10461207Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.Type: GrantFiled: January 22, 2015Date of Patent: October 29, 2019Assignee: First Solar, Inc.Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
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Publication number: 20190296174Abstract: A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium.Type: ApplicationFiled: October 11, 2017Publication date: September 26, 2019Applicant: First Solar, Inc.Inventors: Markus Gloeckler, Fang Mei, Wei Zhang
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Publication number: 20190296180Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.Type: ApplicationFiled: June 10, 2019Publication date: September 26, 2019Applicant: First Solar, Inc.Inventors: Anke Abken, Markus Gloeckler, Roger Green, Akhlesh Gupta, Upali Jayamaha, Peter Meyers, Rick Powell
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Patent number: 10319873Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.Type: GrantFiled: January 13, 2016Date of Patent: June 11, 2019Assignee: First Solar, Inc.Inventors: Rick C. Powell, Upali Jayamaha, Anke Abken, Markus Gloeckler, Akhlesh Gupta, Roger T. Green, Peter Meyers
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Patent number: 10056507Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1-xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1-xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1-xMgxO window layer.Type: GrantFiled: June 16, 2015Date of Patent: August 21, 2018Assignee: Frist Solar, Inc.Inventors: Rui Shao, Markus Gloeckler
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Patent number: 10026861Abstract: An improved photovoltaic device and methods of manufacturing the same that includes an interface layer adjacent to a semiconductor absorber layer, where the interface layer includes a material in the semiconductor layer which decreases in concentration from the side of the interface layer contacting the absorber layer to an opposite side of the interface layer.Type: GrantFiled: October 16, 2012Date of Patent: July 17, 2018Assignee: First Solar, Inc.Inventors: Igor Sankin, Markus Gloeckler, Benyamin Buller, Kieran Tracy
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Patent number: 9799784Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1?x) layer as are methods of forming such a photovoltaic device.Type: GrantFiled: March 13, 2014Date of Patent: October 24, 2017Assignee: First Solar, Inc.Inventors: Arnold Allenic, Zhigang Ban, Benyamin Buller, Markus Gloeckler, Benjamin Milliron, Xilin Peng, Rick C. Powell, Jigish Trivedi, Oomman K. Varghese, Jianjun Wang, Zhibo Zhao
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Publication number: 20170288073Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.Type: ApplicationFiled: June 12, 2017Publication date: October 5, 2017Applicant: First Solar, Inc.Inventors: Benyamin Buller, Markus Gloeckler, Akhlesh Gupta, Rick Powell, Rui Shao, Gang Xiong, Ming Lun Yu, Zhibo Zhao