Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract: A method and apparatus for controlling and changing the composition of a cadmium zinc telluride (CZT) transition layer as it is formed over a partially completed photovoltaic device using electrochemical deposition (ECD) where plating variables are systematically changed while the CZT transition layer is formed to change the composition of the plated CZT transition layer.

Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1-x) layer as are methods of forming such a photovoltaic device.

Abstract: A back electrode for a PV device and method of formation are disclosed. A ZnTe material is provided over an absorber material and a MoNx material is provided over the ZnTe material. A Mo material may also be included in the back electrode above or below the MoNx layer and a metal layer may be also provided over the MoNx layer.

Abstract: Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdSxTe1-x (where 0?x?1), having an average grain size to thickness ratio from greater than 2 to about 50 and an average grain size of between about 4 ?m and about 14 ?m and methods for forming the same.

Abstract: A method for producing apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.

Abstract: An inline metrology method and system using an electrolytic cell for measuring electrical characteristics of a semiconductor device, such as a photovoltaic device, during manufacture.

Abstract: A method and apparatus for forming a crystalline cadmium stannate layer of a photovoltaic device by heating an amorphous layer in the presence of hydrogen gas.

Abstract: A method of forming an anti-reflective surface for photovoltaic modules. A photovoltaic module including a surface configured to be illuminated is provided. The surface is contacted with an etchant, thereby modifying a portion of the surface to alter the index of refraction.

Abstract: A method for manufacturing a photovoltaic module including a laminating step.

Abstract: Described herein is a contact for a photovoltaic device and method of making the same. The contact has a transparent conductive oxide stack, where a first portion of the transparent conductive oxide stack is formed by atmospheric pressure vapor deposition and a second portion of the transparent conductive oxide stack is formed by physical vapor deposition.

Abstract: An apparatus and a method for testing and/or conditioning photovoltaic modules. The apparatus includes a set of contacts for contacting electrical conductors of the module and a testing and/or conditioning system for testing and/or conditioning of the module and measuring parameters associated therewith.

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a MS 1-xOx window layer formed over the substrate structure, wherein M is an element from the group consisting of Zn, Sn, and In. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a MS 1-xOx window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process, wherein M is an element from the group consisting of Zn, Sn, and In.

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1?xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1?xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1?xMgxO window layer.

Abstract: Described herein is a method of using the buffer layer of a transparent conductive substrate as a dopant source for the n-type window layer of a photovoltaic device. The dopant source of the buffer layer distributes to the window layer of the photovoltaic device during semiconductor processing. Described herein are also methods of manufacturing embodiments of the substrate structure and photovoltaic device. Disclosed embodiments also describe a photovoltaic module and a photovoltaic structure with a plurality of photovoltaic devices having an embodiment of the substrate structure.

Abstract: An anti-reflective surface on a photovoltaic can reduce optical reflection.

Abstract: An in-process measurement apparatus can be used to determine characteristics of a photovoltaic module. Capacitance measurements of the photovoltaic module are conducted before, during, or after execution of a high-potential leakage test, a performance test, or other tests of the module. The capacitance measurements are used to determine the characteristics of the photovoltaic module, including information regarding depletion width, doping density, film layer thickness, trap concentrations and absorber thickness. The apparatus can also be used to ensure that photovoltaic modules conform to product specifications.

Abstract: A method of manufacturing a photovoltaic device may include concurrently transforming a transparent conductive oxide layer from a substantially amorphous state to a substantially crystalline state and forming one or more semiconductor layers.

Abstract: A method for manufacturing a photovoltaic module including a laminating step.