Abstract: A semiconductor device includes a semiconductor substrate. A metal structure is disposed over the semiconductor substrate. A metal of the metal structure is Cu or a Cu-based alloy. A passivation layer is disposed over the metal structure. The passivation layer includes a first layer including CuSiN, and a second layer including Si, N and H. In atomic numbers, a ratio of Si to N is equal to or greater than 3.3/4. A method of manufacturing the semiconductor device is also described.

Abstract: Techniques and solutions are provided for a table schema that facilitates data denormalization, and which can allow for improved database system performance. Rather than accessing multiple tables, database operations can access a single table, which can reduce the number and complexity of database operations. The table schema includes an attribute subset indicator field. Different values of the attribute subset indicator field can be associated with different contexts, such as different tables or views, which in turn can represent different entity types. A given value of the attribute subset indicator field allows data to be accessed at a coarse granularity, while more-fine grained results can be obtained by providing a value for one or more attribute fields of the table. Different subsets of attributes are retrievable for a given value of the attribute subset indicator field.

Abstract: Techniques and solutions are provided for a table schema that facilitates data denormalization, and which can allow for improved database system performance. Rather than accessing multiple tables, database operations can access a single table, which can reduce the number and complexity of database operations. The table schema includes an attribute subset indicator field. Different values of the attribute subset indicator field can be associated with different contexts, such as different tables or views, which in turn can represent different entity types. A given value of the attribute subset indicator field allows data to be accessed at a coarse granularity, while more-fine grained results can be obtained by providing a value for one or more attribute fields of the table. Different subsets of attributes are retrievable for a given value of the attribute subset indicator field.

Abstract: The application refers to a semiconductor device including: a semiconductor body having a first surface and a second surface; an active region having at least one semiconductor cell configured to conduct a load current between the first surface and the second surface; an edge termination region separating the active region from a chip edge; and a first layer within at least a part of the edge termination region. The first layer includes silicon, nitrogen and hydrogen. In atomic numbers, a ratio of the silicon to the nitrogen is at least 3.3 to 4 in at least a portion of the first layer. At least the portion of the first layer includes at most 16 percent hydrogen in atomic numbers.

Abstract: A semiconductor device includes: a semiconductor body having an active region and an edge termination region between the active region and a side surface of the semiconductor body; a first portion including silicon and nitrogen; a second portion including silicon and nitrogen, the second portion being in direct contact with the first portion; and a front side metallization in contact with the semiconductor body in the active region. The first portion separates the second portion from the semiconductor body. An average silicon content in the first portion is higher than in the second portion. The front side metallization is interposed between the first portion and the semiconductor body in the active region but not in the edge termination region, and/or the first portion and the second portion are both present in the edge termination region but not in the active region.

Abstract: A high voltage semiconductor device includes a semiconductor substrate including an upper surface, a high voltage electrically conductive structure disposed on the semiconductor substrate, a first step topography at an edge of the high voltage electrically conductive structure, a varying lateral doping zone disposed within the semiconductor substrate, and a layer stack including an electrically insulating buffer layer, a SiC layer over the electrically insulating buffer layer, and a silicon nitride layer over the SiC layer or a nitrided surface region of the SiC layer, wherein the layer stack conforms to the first step topography and extends over the varying lateral doping zone.

Abstract: A method, a system, and a computer program product for defining and implementing various process sequences. One or more first processing parameters for executing a sequence of processes are identified. The sequence of processes includes a plurality of executable computing processes. The first processing parameters define one or more periods of time associated with executing the sequence of processes. At least one subject matter domain parameter associated with the sequence of processes is determined. Based on the subject matter domain parameter, one or more executable computing processes in the plurality of executable computing processes is selected for inclusion in the sequence of processes. The sequence of processes having the selected executable computing processes arranged for execution using a predetermined execution order is generated. Each of the selected executable computing processes in the sequence of processes is executed in accordance with the predetermined execution order.

Abstract: According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.

Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.

Abstract: A semiconductor device includes: a semiconductor body having an active region and an edge termination region between the active region and a side surface of the semiconductor body; a first portion including silicon and nitrogen; a second portion including silicon and nitrogen, the second portion being in direct contact with the first portion; and a front side metallization in contact with the semiconductor body in the active region. The first portion separates the second portion from the semiconductor body. An average silicon content in the first portion is higher than in the second portion. The front side metallization is interposed between the first portion and the semiconductor body in the active region but not in the edge termination region, and/or the first portion and the second portion are both present in the edge termination region but not in the active region.

Abstract: A semiconductor device includes a semiconductor body and a first portion including silicon and nitrogen. The first portion is in direct contact with the semiconductor body. A second portion including silicon and nitrogen is in direct contact with the first portion. The first portion is between the semiconductor body and the second portion. An average silicon content in the first portion is higher than in the second portion.

Abstract: An improved process for distributing data objects and a process for reducing skew in groups of data objects to be processed in parallel are provided herein. A request for parallel processing of a plurality of data objects is received. One or more groups for distributing the data objects are generated. Hash value intervals for the one or more groups are determined. Hash values for the plurality of data objects are determined. The plurality of data objects are distributed into the one or more groups based on their respective hash values and the hash value intervals. The plurality of data objects are processed in parallel by the groups comprising the distributed data objects. The processing results of the plurality of data objects are provided in response to the request.

Abstract: A high voltage semiconductor device includes a high voltage electrically conductive structure and a step topography at or in the vicinity of the high voltage electrically conductive structure. A layer stack covers the step topography. The layer stack includes an electrically insulating buffer layer, a SiC layer over the electrically insulating buffer layer and a silicon nitride layer over the SiC layer or a nitrided surface region of the SiC layer.

Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.

Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.

Abstract: According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.

Abstract: A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

Abstract: According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.

Abstract: A semiconductor device includes a semiconductor body and a first portion including silicon and nitrogen. The first portion is in direct contact with the semiconductor body. A second portion including silicon and nitrogen is in direct contact with the first portion. The first portion is between the semiconductor body and the second portion. An average silicon content in the first portion is higher than in the second portion.

Abstract: An improved process for distributing data objects and a process for reducing skew in groups of data objects to be processed in parallel are provided herein. A request for parallel processing of a plurality of data objects is received. One or more groups for distributing the data objects are generated. Hash value intervals for the one or more groups are determined. Hash values for the plurality of data objects are determined. The plurality of data objects are distributed into the one or more groups based on their respective hash values and the hash value intervals. The plurality of data objects are processed in parallel by the groups comprising the distributed data objects. The processing results of the plurality of data objects are provided in response to the request.