Patents by Inventor Markus Kahn

Markus Kahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10325803
    Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.
    Type: Grant
    Filed: May 3, 2018
    Date of Patent: June 18, 2019
    Assignee: Infineon Technologies AG
    Inventors: Matthias Kuenle, Gerhard Schmidt, Martin Sporn, Markus Kahn, Juergen Steinbrenner, Ravi Joshi
  • Patent number: 10293477
    Abstract: Storage equipment including at least one storage container with a vertical axis, on which a coupling bar, which can rotate about a rotational axis that is at a right angle to the vertical axis, is mounted on the outside, in the upper region of the front side of same. The coupling bar is designed as a pivot bar with only one arm, which is provided with an individual bar arm, projecting away from the rotational axis on one side, on which a coupling structure is arranged. The pivot angle of the pivot bar is limited to 90° by a stop, and the pivot bar can be pivoted exclusively between an inactive standby position with the bar arm oriented at a right angle to the vertical axis, and an active coupling position projecting upwards in the axial direction of the vertical axis.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: May 21, 2019
    Assignee: TTS TOOLTECHNIC SYSTEMS AG & CO. KG
    Inventors: Lutz Wolle, Markus Barabeisch, Denny Kahn
  • Patent number: 10106398
    Abstract: A micromechanical structure comprises a substrate and a functional structure arranged at the substrate. The functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure comprises a carbon layer arrangement, wherein a basis material of the carbon layer arrangement is a carbon material.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: October 23, 2018
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Ulrich Schmid, Tobias Frischmuth, Peter Irsigler, Thomas Grille, Daniel Maurer, Ursula Hedenig, Markus Kahn, Guenter Denifl, Michael Schneider
  • Patent number: 10081533
    Abstract: A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. The functional structure includes a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region. The stiffening structure material includes a silicon material and at least a carbon material.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: September 25, 2018
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Ulrich Schmid, Tobias Frischmuth, Peter Irsigler, Thomas Grille, Daniel Maurer, Ursula Hedenig, Markus Kahn, Günter Denifl
  • Publication number: 20180268028
    Abstract: A denormalized table, referred to as a semantic cluster table, allows for improved database system performance. Rather than accessing multiple tables, database operations can access a single table, which can reduce the number and complexity of database operations. The semantic cluster table includes a semantic indicator field. Different values of the semantic indicator field can be associated with different semantic contexts, allowing data to be accessed at a coarse granularity. Each semantic context can also be associated with one or more attribute fields, which can be used to access data, including at different level of granularity than the semantic indicator field value alone. Each semantic context can also be associated with specific key figure fields, which can preserve the different semantic contexts of data in the semantic cluster table.
    Type: Application
    Filed: March 17, 2017
    Publication date: September 20, 2018
    Applicant: SAP SE
    Inventors: Holger Wuest, Markus Kahn, Lothar Muessler, Dirk Endesfelder, Markus Riepp
  • Publication number: 20180247857
    Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.
    Type: Application
    Filed: May 3, 2018
    Publication date: August 30, 2018
    Inventors: Matthias KUENLE, Gerhard SCHMIDT, Martin SPORN, Markus KAHN, Juergen STEINBRENNER, Ravi JOSHI
  • Publication number: 20180247820
    Abstract: A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. The method further includes performing a secondary deposition over the sidewall of a feature by increasing the flow of the silicon source relative to the flow of the dopant source. A reflow process is performed after stopping the flow. A variation in thickness of the layer of silicate glass over the sidewall of a feature after the reflow process is between 1% to 20%.
    Type: Application
    Filed: April 27, 2018
    Publication date: August 30, 2018
    Inventors: Juergen Steinbrenner, Markus Kahn, Helmut Schoenherr, Ravi Keshav Joshi, Heimo Hofer, Martin Poelzl, Harald Huetter
  • Publication number: 20180237292
    Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
    Type: Application
    Filed: February 21, 2018
    Publication date: August 23, 2018
    Inventors: Markus Kahn, Anna-Katharina Kaiser, Soenke Pirk, Juergen Steinbrenner, Julia-Magdalena Straeussnigg
  • Patent number: 10049879
    Abstract: A silicon-carbide substrate that includes: a doped silicon-carbide contact region directly adjoining a main surface of the substrate, and a dielectric layer covering the main surface is provided. A protective layer is formed on the silicon-carbide substrate such that the protective layer covers the dielectric layer and exposes the doped silicon-carbide contact region at the main surface. A metal layer that conforms to the protective layer and directly contacts the exposed doped silicon-carbide contact region is deposited. A first rapid thermal anneal process is performed. A thermal budget of the first rapid thermal anneal process is selected to cause the metal layer to form a silicide with the doped silicon-carbide contact region during the first rapid thermal anneal process without causing the metal layer to form a silicide with the protective layer during the first rapid thermal anneal process.
    Type: Grant
    Filed: May 1, 2017
    Date of Patent: August 14, 2018
    Assignee: Infineon Technologies AG
    Inventors: Ravi Keshav Joshi, Romain Esteve, Markus Kahn, Kurt Pekoll, Juergen Steinbrenner, Gerald Unegg
  • Publication number: 20180211821
    Abstract: According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.
    Type: Application
    Filed: January 23, 2017
    Publication date: July 26, 2018
    Inventors: Rudolf Kogler, Juergen Steinbrenner, Wolfgang Dastel, Harald Huetter, Markus Kahn
  • Patent number: 9984915
    Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: May 29, 2018
    Assignee: Infineon Technologies AG
    Inventors: Matthias Kuenle, Gerhard Schmidt, Martin Sporn, Markus Kahn, Juergen Steinbrenner, Ravi Joshi
  • Patent number: 9941111
    Abstract: According to various embodiments, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma source, wherein the plasma chamber of the remote plasma source is coupled to a processing chamber for processing the semiconductor layer; introducing the etch plasma into the processing chamber to remove a native oxide layer from a surface of the semiconductor layer and at most a negligible amount of semiconductor material of the semiconductor layer; and, subsequently, depositing a dielectric layer directly on the surface of the semiconductor layer.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: April 10, 2018
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Gerhard Schmidt, Markus Kahn, Christian Maier, Philipp Koch, Juergen Steinbrenner
  • Publication number: 20180076036
    Abstract: A silicon-carbide substrate that includes: a doped silicon-carbide contact region directly adjoining a main surface of the substrate, and a dielectric layer covering the main surface is provided. A protective layer is formed on the silicon-carbide substrate such that the protective layer covers the dielectric layer and exposes the doped silicon-carbide contact region at the main surface. A metal layer that conforms to the protective layer and directly contacts the exposed doped silicon-carbide contact region is deposited. A first rapid thermal anneal process is performed. A thermal budget of the first rapid thermal anneal process is selected to cause the metal layer to form a silicide with the doped silicon-carbide contact region during the first rapid thermal anneal process without causing the metal layer to form a silicide with the protective layer during the first rapid thermal anneal process.
    Type: Application
    Filed: May 1, 2017
    Publication date: March 15, 2018
    Inventors: Ravi Keshav Joshi, Romain Esteve, Markus Kahn, Kurt Pekoll, Juergen Steinbrenner, Gerald Unegg
  • Patent number: 9917170
    Abstract: A method of forming a contact structure includes providing a silicon-carbide substrate having a highly doped silicon-carbide contact region formed in the substrate and extending to a main surface of the substrate. A carbon-based contact region is formed which is in direct contact with the highly doped silicon-carbide contact region and which extends to the main surface. A conductor is formed on the carbon-based contact region such that the carbon-based contact region is interposed between the conductor and the highly doped silicon-carbide contact region. A thermal budget for forming the carbon-based contact region is maintained below a level that induces metal silicidization of the highly doped silicon-carbide contact region.
    Type: Grant
    Filed: April 22, 2016
    Date of Patent: March 13, 2018
    Assignee: Infineon Technologies AG
    Inventors: Ravi Joshi, Romain Esteve, Markus Kahn, Gerald Unegg
  • Publication number: 20180002167
    Abstract: A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.
    Type: Application
    Filed: June 29, 2017
    Publication date: January 4, 2018
    Inventors: Tobias Frischmuth, Guenter Denifl, Thomas Grille, Ursula Hedenig, Markus Kahn, Daniel Maurer, Ulrich Schmid, Michael Schneider
  • Publication number: 20170309720
    Abstract: A method of forming a contact structure includes providing a silicon-carbide substrate having a highly doped silicon-carbide contact region formed in the substrate and extending to a main surface of the substrate. A carbon-based contact region is formed which is in direct contact with the highly doped silicon-carbide contact region and which extends to the main surface. A conductor is formed on the carbon-based contact region such that the carbon-based contact region is interposed between the conductor and the highly doped silicon-carbide contact region. A thermal budget for forming the carbon-based contact region is maintained below a level that induces metal silicidization of the highly doped silicon-carbide contact region.
    Type: Application
    Filed: April 22, 2016
    Publication date: October 26, 2017
    Inventors: Ravi Joshi, Romain Esteve, Markus Kahn, Gerald Unegg
  • Patent number: 9741618
    Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: August 22, 2017
    Assignee: Infineon Technologies AG
    Inventors: Gudrun Stranzl, Martin Zgaga, Markus Kahn, Guenter Denifl
  • Patent number: 9728480
    Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: August 8, 2017
    Assignee: Infineon Technologies AG
    Inventors: Kurt Matoy, Hubert Maier, Christian Krenn, Elfriede Kraxner Wellenzohn, Helmut Schoenherr, Juergen Steinbrenner, Markus Kahn, Silvana Fister, Christoph Brunner, Herbert Gietler, Uwe Hoeckele
  • Publication number: 20170197865
    Abstract: Various embodiments provide a mold including a pyrolytic carbon film disposed at a surface of the mold. Various embodiments relate to using a low pressure chemical vapor deposition process (LPCVD) or using a physical vapor deposition (PVD) process in order to form a pyrolytic carbon film at a surface of a mold.
    Type: Application
    Filed: March 27, 2017
    Publication date: July 13, 2017
    Inventors: Guenter Denifl, Alexander Breymesser, Markus Kahn, Andre Brockmeier
  • Publication number: 20170194205
    Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.
    Type: Application
    Filed: December 22, 2015
    Publication date: July 6, 2017
    Inventors: Gudrun Stranzl, Martin Zgaga, Markus Kahn, Guenter Denifl