Patents by Inventor Markus Kuhn

Markus Kuhn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11351030
    Abstract: A method of designing a set of contoured implants for fixation to a bone of a patient, includes obtaining a set of virtual bone models of the bone, selecting a plurality of points on an outer surface of each virtual bone model in the set of virtual bone models, manufacturing a set of implants, each implant corresponding to a respective virtual bone model and having fixation holes corresponding to the selected plurality of points on the outer surface of the respective virtual bone model, contouring each implant in the set of implants and selecting a contoured implant from the set of implants for fixation to the bone of the patient such that the selected contoured implant corresponds to a size of the bone of the patient.
    Type: Grant
    Filed: June 26, 2020
    Date of Patent: June 7, 2022
    Assignee: Stryker European Operations Holdings LLC
    Inventors: Markus Kuhn, Reinhard Rübecamp, Andy Perrin, Verena Heizmann
  • Publication number: 20220115678
    Abstract: A humidifier module is provided having a water vapor-permeable membrane having spacers defining a flow field arranged on either side of the membrane and having a yarn stitched into the membrane. The spacers defining the flow field are formed by the yarn stitched into the membrane. A humidifier, a method for making a humidifier module and a method for making a humidifier are also provided.
    Type: Application
    Filed: December 3, 2019
    Publication date: April 14, 2022
    Inventors: Rune STAECK, Felix ROTHE, Dirk JENSSEN, Martin BUCHENBERGER, Markus KÜHN, Jan BEUSCHER, Sven HARTWIG
  • Patent number: 10897009
    Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.
    Type: Grant
    Filed: May 17, 2019
    Date of Patent: January 19, 2021
    Assignee: Intel Corporation
    Inventors: Niloy Mukherjee, Ravi Pillarisetty, Prashant Majhi, Uday Shah, Ryan E Arch, Markus Kuhn, Justin S. Brockman, Huiying Liu, Elijah V Karpov, Kaan Oguz, Brian S. Doyle, Robert S. Chau
  • Publication number: 20210007849
    Abstract: A method of designing a set of contoured implants for fixation to a bone of a patient, includes obtaining a set of virtual bone models of the bone, selecting a plurality of points on an outer surface of each virtual bone model in the set of virtual bone models, manufacturing a set of implants, each implant corresponding to a respective virtual bone model and having fixation holes corresponding to the selected plurality of points on the outer surface of the respective virtual bone model, contouring each implant in the set of implants and selecting a contoured implant from the set of implants for fixation to the bone of the patient such that the selected contoured implant corresponds to a size of the bone of the patient.
    Type: Application
    Filed: June 26, 2020
    Publication date: January 14, 2021
    Inventors: Markus Kuhn, Reinhard Rübecamp, Andy Perrin, Verena Heizmann
  • Patent number: 10516109
    Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: December 24, 2019
    Assignee: Intel Corporation
    Inventors: Niloy Mukherjee, Ravi Pillarisetty, Prashant Majhi, Uday Shah, Ryan E Arch, Markus Kuhn, Justin S. Brockman, Huiying Liu, Elijah V Karpov, Kaan Oguz, Brian S. Doyle, Robert S. Chau
  • Publication number: 20190348604
    Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.
    Type: Application
    Filed: May 17, 2019
    Publication date: November 14, 2019
    Applicant: INTEL CORPORATION
    Inventors: NILOY MUKHERJEE, RAVI PILLARISETTY, PRASHANT MAJHI, UDAY SHAH, RYAN E ARCH, MARKUS KUHN, JUSTIN S. BROCKMAN, HUIYING LIU, ELIJAH V KARPOV, KAAN OGUZ, BRIAN S. DOYLE, ROBERT S. CHAU
  • Patent number: 10463411
    Abstract: The invention relates to a surgical retaining instrument for bone plates. The retaining instrument comprises a carrying element and two plate retaining jaws arranged on the carrying element. The mutual distance of the plate retaining jaws can be changed in order to pick up or release a bone plate. Furthermore, an actuating device is provided, which has two arms, which can be moved relative to each other and which are designed to change the mutual distance of the plate retaining jaws. The carrying element is rotatably mounted relative to the arms.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: November 5, 2019
    Assignee: Stryker European Holdings I, LLC
    Inventors: Christian Knoepfle, Karl Greiner, Manfred Schmuck, Uwe Koerner, Markus Kuhn
  • Patent number: 10400801
    Abstract: A compact unit has an electric motor accommodated in housing parts (7, 55) of a unit housing (45) and driving at least one hydraulic pump and giving off heat at the same time, an air heat-exchanging device, and a fan (19) drivable to produce an air flow. A flow-conducting device (47, 55) divides the air flow at least in a first partial flow flowing around the electric motor and a second partial flow flowing to the heat-exchanging device in the unit housing (45). Alternatively, arranged in series, the air flow first flows against the electric motor and then the heat-exchanging device, or that the incidence of the air flow occurs at least partially in the reverse direction.
    Type: Grant
    Filed: January 14, 2015
    Date of Patent: September 3, 2019
    Assignee: HYDAC FLUIDTECHNIK GMBH
    Inventors: Andreas Boehler, Markus Kuhn
  • Patent number: 10304929
    Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: May 28, 2019
    Assignee: Intel Corporation
    Inventors: Jack T. Kavalieros, Nancy Zelick, Been-Yih Jin, Markus Kuhn, Stephen M. Cea
  • Publication number: 20180062077
    Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.
    Type: Application
    Filed: December 24, 2014
    Publication date: March 1, 2018
    Applicant: Intel Corporation
    Inventors: NILOY MUKHERJEE, RAVI PILLARISETTY, PRASHANT MAJHI, UDAY SHAH, RYAN E ARCH, MARKUS KUHN, JUSTIN S. BROCKMAN, HUIYING LIU, ELIJAH V KARPOV, KAAN OGUZ
  • Publication number: 20170317172
    Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.
    Type: Application
    Filed: July 14, 2017
    Publication date: November 2, 2017
    Inventors: Jack T. KAVALIEROS, Nancy ZELICK, Been-Yih JIN, Markus KUHN, Stephen M. CEA
  • Patent number: 9711598
    Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: July 18, 2017
    Assignee: Intel Corporation
    Inventors: Jack T. Kavalieros, Nancy Zelick, Been-Yih Jin, Markus Kuhn, Stephen M. Cea
  • Patent number: 9680013
    Abstract: A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom.
    Type: Grant
    Filed: September 5, 2013
    Date of Patent: June 13, 2017
    Assignee: Intel Corporation
    Inventors: Stephen M. Cea, Roza Kotlyar, Jack T. Kavalieros, Martin D. Giles, Tahir Ghani, Kelin J. Kuhn, Markus Kuhn, Nancy M. Zelick
  • Publication number: 20170058923
    Abstract: The invention relates to a compact unit, at least consisting of an electric motor, which is accommodated in housing parts (7, 55) of a unit housing (45) and which drives at least one hydraulic pump and gives off heat at the same time, an air heat-exchanging device, and a fan (19), which can be driven in order t o produce an air flow. The compact unit is characerized in that a flow-conducting device (47, 55) that divides off from the air flow at least a first partial flow flowing around the electric motor and a second partial flow flowing to the heat-exchanging device is present in the unit housing (45), or that, arranged in series, the air flow first flows against the electric motor and then the heat-exchanging device, or that the incidence of the air flow occurs at least partially in the reverse direction.
    Type: Application
    Filed: January 14, 2015
    Publication date: March 2, 2017
    Inventors: Andreas BOEHLER, Markus KUHN
  • Publication number: 20160329403
    Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.
    Type: Application
    Filed: July 21, 2016
    Publication date: November 10, 2016
    Inventors: Jack T. Kavalieros, Nancy Zelick, Been-Yih Jin, Markus Kuhn, Stephen M. Cea
  • Patent number: 9419140
    Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: August 16, 2016
    Assignee: Intel Corporation
    Inventors: Jack T. Kavalieros, Nancy Zelick, Been-Yih Jin, Markus Kuhn, Stephen M. Cea
  • Publication number: 20160049513
    Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.
    Type: Application
    Filed: October 13, 2015
    Publication date: February 18, 2016
    Inventors: Jack T. Kavalieros, Nancy Zelick, Been-Yih Jin, Markus Kuhn, Stephen M. Cea
  • Patent number: 9159835
    Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.
    Type: Grant
    Filed: June 4, 2012
    Date of Patent: October 13, 2015
    Assignee: Intel Corporation
    Inventors: Jack T. Kavalieros, Nancy Zelick, Been-Yih Jin, Markus Kuhn, Stephen M. Cea
  • Patent number: 8992582
    Abstract: A plate system for bone fixation including intermaxillary fixation which has at least one plate with one opening and at least one bone screw for securing the plate to an adjacent bone and/or other anatomical structures (e.g., the gingival) with space maintained in between. The plate system provides a fixed connection at both the plate and the bone. A method for achieving fixation while maintaining space between the plate and bone includes placement of a spacer over the desired bone screw insertion point, followed by placement of the plate over the spacer so that the bone screw may be inserted through the plate while the spacer is held in position.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: March 31, 2015
    Assignee: Stryker Leibinger GmbH & Co. KG
    Inventors: Christian Knoepfle, Manfred Schmuck, Karl Greiner, Markus Kuhn
  • Publication number: 20140249585
    Abstract: The invention relates to a surgical retaining instrument for bone plates. The retaining instrument comprises a carrying element and two plate retaining jaws arranged on the carrying element. The mutual distance of the plate retaining jaws can be changed in order to pick up or release a bone plate. Furthermore, an actuating device is provided, which has two arms, which can be moved relative to each other and which are designed to change the mutual distance of the plate retaining jaws. The carrying element is rotatably mounted relative to the arms.
    Type: Application
    Filed: January 12, 2012
    Publication date: September 4, 2014
    Applicant: STRYKER LEIBINGER GMBH & CO. KG
    Inventors: Christian Knoepfle, Karl Greiner, Manfred Schmuck, Uwe Koerner, Markus Kuhn