Abstract: A compensating element having first and second modules is disclosed. A locking mechanism which can be switched between a first and a second operating state is provided. The first module is connected firmly to the second module in the first operating state. The first operating state defines a zero position between the first and the second module. The first and the second module are connected to one another in the second operating state by a spring mechanism in such a way that they are movable relative to one another. The compensating element has a midaxis, and the first and the second module are arranged at least partially next to one another in the direction of the midaxis. A measuring system is also disclosed with which the relative position between the first and the second module can be measured. The first or second module includes an externally visible luminous surface. A luminous state of the luminous surface is dependent on the relative position measured by the measuring system.

Abstract: A method includes receiving, by a processor, from a first server, a first plurality of frames associated with a media item. Each frame of the first plurality of frames is associated with a respective timestamp of a first plurality of timestamps generated by the first server. A second plurality of frames associated with the media item are received from a second server. The second plurality of frames are each associated with a respective timestamp of a second plurality of timestamps generated by the second server. An offset value between a first timestamp of the first plurality of timestamps and a second timestamp of the second plurality of timestamps is determined. A modified plurality of frames is generated by modifying, based on the offset value, each timestamp of a subset of the second plurality of timestamps. The modified plurality of frames is sent to the client device.

Abstract: A method of designing a set of contoured implants for fixation to a bone of a patient, includes obtaining a set of virtual bone models of the bone, selecting a plurality of points on an outer surface of each virtual bone model in the set of virtual bone models, manufacturing a set of implants, each implant corresponding to a respective virtual bone model and having fixation holes corresponding to the selected plurality of points on the outer surface of the respective virtual bone model, contouring each implant in the set of implants and selecting a contoured implant from the set of implants for fixation to the bone of the patient such that the selected contoured implant corresponds to a size of the bone of the patient.

Abstract: A humidifier module is provided having a water vapor-permeable membrane having spacers defining a flow field arranged on either side of the membrane and having a yarn stitched into the membrane. The spacers defining the flow field are formed by the yarn stitched into the membrane. A humidifier, a method for making a humidifier module and a method for making a humidifier are also provided.

Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.

Abstract: A method of designing a set of contoured implants for fixation to a bone of a patient, includes obtaining a set of virtual bone models of the bone, selecting a plurality of points on an outer surface of each virtual bone model in the set of virtual bone models, manufacturing a set of implants, each implant corresponding to a respective virtual bone model and having fixation holes corresponding to the selected plurality of points on the outer surface of the respective virtual bone model, contouring each implant in the set of implants and selecting a contoured implant from the set of implants for fixation to the bone of the patient such that the selected contoured implant corresponds to a size of the bone of the patient.

Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.

Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.

Abstract: The invention relates to a surgical retaining instrument for bone plates. The retaining instrument comprises a carrying element and two plate retaining jaws arranged on the carrying element. The mutual distance of the plate retaining jaws can be changed in order to pick up or release a bone plate. Furthermore, an actuating device is provided, which has two arms, which can be moved relative to each other and which are designed to change the mutual distance of the plate retaining jaws. The carrying element is rotatably mounted relative to the arms.

Abstract: A compact unit has an electric motor accommodated in housing parts (7, 55) of a unit housing (45) and driving at least one hydraulic pump and giving off heat at the same time, an air heat-exchanging device, and a fan (19) drivable to produce an air flow. A flow-conducting device (47, 55) divides the air flow at least in a first partial flow flowing around the electric motor and a second partial flow flowing to the heat-exchanging device in the unit housing (45). Alternatively, arranged in series, the air flow first flows against the electric motor and then the heat-exchanging device, or that the incidence of the air flow occurs at least partially in the reverse direction.

Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.

Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

Abstract: A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom.

Abstract: The invention relates to a compact unit, at least consisting of an electric motor, which is accommodated in housing parts (7, 55) of a unit housing (45) and which drives at least one hydraulic pump and gives off heat at the same time, an air heat-exchanging device, and a fan (19), which can be driven in order t o produce an air flow. The compact unit is characerized in that a flow-conducting device (47, 55) that divides off from the air flow at least a first partial flow flowing around the electric motor and a second partial flow flowing to the heat-exchanging device is present in the unit housing (45), or that, arranged in series, the air flow first flows against the electric motor and then the heat-exchanging device, or that the incidence of the air flow occurs at least partially in the reverse direction.

Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.