Abstract: A feeding screw machine for feeding a processing screw machine comprises a housing with at least two housing bores formed therein and screw shafts rotatably arranged in the at least two housing bores. The at least two housing bores and the at least two screw shafts define a free volume in a respective cross-sectional plane, which decreases monotonically at least in some regions for continuous compression of a material in a conveying direction. This enables an improved supply of material with a low bulk density.

Abstract: The invention relates to a dental tool having a shank region, which is formed for coupling to a dental handpiece, and also having a work region, which is connected to the shank region. In this case, the shank region of the dental tool is formed so that there is the possibility of latchable insertion and removal without actuation. In particular, at least the shank region can consist of plastics material. As a result, inter alia facilitated handling of the tool and inexpensive production of the tool are rendered possible.

Abstract: A compensating element having a first and a second assembly, wherein a locking mechanism is provided which can be switched over between a first and a second operating state. In the first operating state, the first assembly is connected fixedly to the second assembly and, in the second operating state, the first and second assemblies are connected to each other via a spring mechanism in such a manner that they are movable relative to each other. The locking mechanism includes an electric motor that can be used to switch over between the first and the second operating state. A locking ring is or is not braced against at least three balls depending on its rotational position with respect to a center axis. The locking ring is connected in terms of rotary drive to the electric motor via a torsion spring which is elastic with respect to the center axis.

Abstract: The present disclosure provides a screw and a screw assemblage. The screw includes a screw head and a screw shaft which protrudes from an underside of the screw head and has a self-forming or self-cutting thread, wherein the underside of the screw head has a bearing area and at least one annular recess extending around the shaft between the bearing area and the shaft, wherein a coating made of an elastic sealant is attached to the underside of the screw head.

Abstract: A method of designing a set of contoured implants for fixation to a bone of a patient, includes obtaining a set of virtual bone models of the bone, selecting a plurality of points on an outer surface of each virtual bone model in the set of virtual bone models, manufacturing a set of implants, each implant corresponding to a respective virtual bone model and having fixation holes corresponding to the selected plurality of points on the outer surface of the respective virtual bone model, contouring each implant in the set of implants and selecting a contoured implant from the set of implants for fixation to the bone of the patient such that the selected contoured implant corresponds to a size of the bone of the patient.

Abstract: A humidifier module is provided having a water vapor-permeable membrane having spacers defining a flow field arranged on either side of the membrane and having a yarn stitched into the membrane. The spacers defining the flow field are formed by the yarn stitched into the membrane. A humidifier, a method for making a humidifier module and a method for making a humidifier are also provided.

Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.

Abstract: A method of designing a set of contoured implants for fixation to a bone of a patient, includes obtaining a set of virtual bone models of the bone, selecting a plurality of points on an outer surface of each virtual bone model in the set of virtual bone models, manufacturing a set of implants, each implant corresponding to a respective virtual bone model and having fixation holes corresponding to the selected plurality of points on the outer surface of the respective virtual bone model, contouring each implant in the set of implants and selecting a contoured implant from the set of implants for fixation to the bone of the patient such that the selected contoured implant corresponds to a size of the bone of the patient.

Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.

Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.

Abstract: The invention relates to a surgical retaining instrument for bone plates. The retaining instrument comprises a carrying element and two plate retaining jaws arranged on the carrying element. The mutual distance of the plate retaining jaws can be changed in order to pick up or release a bone plate. Furthermore, an actuating device is provided, which has two arms, which can be moved relative to each other and which are designed to change the mutual distance of the plate retaining jaws. The carrying element is rotatably mounted relative to the arms.

Abstract: A compact unit has an electric motor accommodated in housing parts (7, 55) of a unit housing (45) and driving at least one hydraulic pump and giving off heat at the same time, an air heat-exchanging device, and a fan (19) drivable to produce an air flow. A flow-conducting device (47, 55) divides the air flow at least in a first partial flow flowing around the electric motor and a second partial flow flowing to the heat-exchanging device in the unit housing (45). Alternatively, arranged in series, the air flow first flows against the electric motor and then the heat-exchanging device, or that the incidence of the air flow occurs at least partially in the reverse direction.

Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.

Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

Abstract: A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom.

Abstract: The invention relates to a compact unit, at least consisting of an electric motor, which is accommodated in housing parts (7, 55) of a unit housing (45) and which drives at least one hydraulic pump and gives off heat at the same time, an air heat-exchanging device, and a fan (19), which can be driven in order t o produce an air flow. The compact unit is characerized in that a flow-conducting device (47, 55) that divides off from the air flow at least a first partial flow flowing around the electric motor and a second partial flow flowing to the heat-exchanging device is present in the unit housing (45), or that, arranged in series, the air flow first flows against the electric motor and then the heat-exchanging device, or that the incidence of the air flow occurs at least partially in the reverse direction.

Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.

Abstract: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.