Abstract: The present invention relates to a process for preparing cyclohexane by isomerizing a hydrocarbon mixture (HM1) comprising methylcyclopentane (MCP) in the presence of a catalyst. The catalyst is preferably an acidic ionic liquid. The starting material used is a stream (S1) which originates from a steamcracking process. The hydrocarbon mixture (HM1) obtained from this stream (S1) in an apparatus for aromatics removal has a reduced aromatics content compared to stream (S1), and (HM1) may optionally also be (virtually) free of aromatics. Depending on the type and amount of the aromatics remaining in the hydrocarbon mixture (HM1), especially in the case that benzene is present, the isomerization may additionally be preceded by performance of a hydrogenation of (HM1). In addition, depending on the presence of other components of (HM1), further purification steps may optionally be performed prior to or after the isomerization or hydrogenation.

Abstract: In a field-effect semiconductor device, alternating first n-type and p-type pillar regions are arranged in the active area. The first n-type pillar regions are in Ohmic contact with the drain metallization. The first p-type pillar regions are in Ohmic contact with the source metallization. An integrated dopant concentration of the first n-type pillar regions substantially matches that of the first p-type pillar regions. A second p-type pillar region is in Ohmic contact with the source metallization, arranged in the peripheral area and has an integrated dopant concentration smaller than that of the first p-type pillar regions divided by a number of the first p-type pillar regions. A second n-type pillar region is arranged between the second p-type pillar region and the first p-type pillar regions, and has an integrated dopant concentration smaller than that of the first n-type pillar regions divided by a number of the first n-type pillar regions.

Abstract: A method of manufacturing a semiconductor device includes forming an amorphous silicon layer over a first isolation layer. The method further includes simultaneously forming a gate oxide layer of a transistor device and transforming the amorphous silicon layer into a polycrystalline silicon layer by a thermal oxidation process. Herein a cover oxide layer is formed on the polycrystalline silicon layer.

Abstract: The present invention relates to a method for differentiating in a subject with HR-HPV between a severe form of HR-HPV infection and a mild form of HR-HPV infection. It further is concerned with a composition comprising a probe oligonucleotide mixture, a device, and a kit for use in conjunction with the method of the invention.

Abstract: A decoupling element for an exhaust system (1) of a combustion engine, with an elastic exhaust gas-conducting body (3), with at least one support ring (7) connected to the body (3) in a fixed manner, which encloses an axial end portion (8) of the body (3) on the outside in the circumferential direction (5), and with at least one flange (9), which is fastened to the support ring (7) by means of a weld seam (12), wherein the flange (9) comprises a connecting piece (13), which is inserted in the end portion (8) of the body (3) enclosed by the support ring (7), and wherein the weld seam (12) is configured circumferential on the outside and connects an axial face end (14) of the support ring (7) facing away from the body (3) to the outer circumference (15) of the connecting piece (13) of the flange (9).

Abstract: A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area, a peripheral area arranged between the active area and the lateral edge, a drift region, first compensation regions forming respective first pn-junctions with the drift region, and second compensation regions extending from the first surface into the drift region and forming respective second pn-junctions with the drift region. The first compensation regions form in the active area a lattice comprising a first base vector having a first length. The second compensation regions have, in a horizontal direction parallel to the first surface, a horizontal width which decreases with an increasing vertical distance from the first surface and with a decreasing horizontal distance from the edge.

Abstract: The present invention relates to a method for differentiating in a subject with HR-HPV between a severe form of HR-HPV infection and a mild form of HR-HPV infection. It further is concerned with a composition comprising a probe oligonucleotide mixture, a device, and a kit for use in conjunction with the method of the invention.

Abstract: A method is described for differentiating in a subject with HPV16 between (i) a severe form of HPV16 infection and (ii) a mild form of HPV16 infection based on determining the amount of a first gene product and a second gene product in a sample of a subject and calculating a ratio of the amount of the first gene product and the amount of the second gene product. A composition is also described, including an oligonucleotide mixture, and also a kit and a device adapted to carry out the described method.

Abstract: A semiconductor device includes a semiconductor body having opposite first and second surfaces. The semiconductor device further includes a transistor structure in the semiconductor body and a source contact structure overlapping the transistor structure. The source contact structure is electrically connected to source regions of the transistor structure. A gate contact structure is further provided, which has a part separated from the source contact structure by a longitudinal gap within a lateral plane. Gate interconnecting structures bridge the longitudinal gap and are electrically coupled between the gate contact structure and a gate electrode of the transistor structure. Electrostatic discharge protection structures bridge the longitudinal gap and are electrically coupled between the gate contact structure and the source contact structure.

Abstract: A semiconductor device comprises a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor device further includes a first isolation layer on the first surface of the semiconductor body and a first electrostatic discharge protection structure on the first isolation layer. The first electrostatic discharge protection structure has a first terminal and a second terminal. A second isolation layer is provided on the electrostatic discharge protection structure. A gate contact area on the second isolation layer is electrically coupled to the first terminal of the first electrostatic discharge protection structure. An electric contact structure is arranged in an overlap area between the gate contact area and the semiconductor body. The electric contact structure is electrically coupled to the second terminal of the first electrostatic discharge protection structure and electrically isolated from the gate contact area.

Abstract: A trench transistor having a semiconductor body includes a source region, a body region, a drain region electrically connected to a drain contact, and a gate trench including a gate electrode which is isolated from the semiconductor body. The gate electrode is configured to control current flow between the source region and the drain region along at least a first side wall of the gate trench. The trench transistor further includes a doped semiconductor region having dopants introduced into the semiconductor body through an unmasked part of the walls of a trench.

Abstract: In a field-effect semiconductor device, alternating first n-type and p-type pillar regions are arranged in the active area. The first n-type pillar regions are in Ohmic contact with the drain metallization. The first p-type pillar regions are in Ohmic contact with the source metallization. An integrated dopant concentration of the first n-type pillar regions substantially matches that of the first p-type pillar regions. A second p-type pillar region is in Ohmic contact with the source metallization, arranged in the peripheral area and has an integrated dopant concentration smaller than that of the first p-type pillar regions divided by a number of the first p-type pillar regions. A second n-type pillar region is arranged between the second p-type pillar region and the first p-type pillar regions, and has an integrated dopant concentration smaller than that of the first n-type pillar regions divided by a number of the first n-type pillar regions.

Abstract: Disclosed is a method for producing a transistor device and a transistor device. The method includes: forming a source region of a first doping type in a body region of a second doping type in a semiconductor body; and forming a low-resistance region of the second doping type adjoining the source region in the body region. Forming the source region includes implanting dopant particles of the first doping type using an implantation mask via a first surface of the semiconductor body into the body region. Implanting the doping particles of the first doping type includes a tilted implantation.

Abstract: In a field-effect semiconductor device, alternating first n-type and p-type pillar regions are arranged in the active area. The first n-type pillar regions are in Ohmic contact with the drain metallization. The first p-type pillar regions are in Ohmic contact with the source metallization. An integrated dopant concentration of the first n-type pillar regions substantially matches that of the first p-type pillar regions. A second p-type pillar region is in Ohmic contact with the source metallization, arranged in the peripheral area and has an integrated dopant concentration smaller than that of the first p-type pillar regions divided by a number of the first p-type pillar regions. A second n-type pillar region is arranged between the second p-type pillar region and the first p-type pillar regions, and has an integrated dopant concentration smaller than that of the first n-type pillar regions divided by a number of the first n-type pillar regions.

Abstract: A method of providing dynamic analysis for troubleshooting in vitro diagnostics instrument issues includes receiving, at a second computing device in communication with a plurality of instruments, identification of an issue associated with a portion of an instrument of the plurality of instruments, the identification received from a first computing device in communication with the instrument. A central computing device accesses data from one or more databases and determines an ordering of one or more corrective actions for resolving the issue by applying the data to a probabilistic model based on at least one of: patterns from the plurality of instruments; and operator input. The central computing device provides the one or more corrective actions in the determined order to the first computing device to be displayed via a user interface at the instrument.

Abstract: A super junction semiconductor device is formed by forming at least a portion of a drift layer on a doped layer of a first conductivity type, implanting first dopants of a first conductivity type and second dopants of a second conductivity type into the drift layer using one or more implant masks with openings to form stripe-shaped first implant regions of the first conductivity type and stripe-shaped second implant regions of the second conductivity type in alternating order, and performing a heat treatment for controlling a diffusion of dopants from the implant regions to form stripe-shaped first regions of the first conductivity type and stripe-shaped second regions of the second conductivity type.

Abstract: A semiconductor device comprises a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor device further comprises a first isolation layer on the first surface of the semiconductor body, and an electrostatic discharge protection structure on the first isolation layer. The electrostatic discharge protection structure includes a first terminal and a second terminal. The semiconductor device further comprises a heat dissipation structure having a first end in direct contact with the electrostatic discharge protection structure and a second end in direct contact with an electrically isolating region.

Abstract: A semiconductor device comprises a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor device further comprises a first isolation layer on the first surface of the semiconductor body, and an electrostatic discharge protection structure on the first isolation layer. The electrostatic discharge protection structure has a first terminal and a second terminal. The semiconductor device further comprises a heat dissipation structure, which has a first end in contact with the electrostatic discharge protection structure and a second end which is in direct contact to an electrically isolating region.

Abstract: A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area, a peripheral area arranged between the active area and the lateral edge, a drift region, first compensation regions forming respective first pn-junctions with the drift region, and second compensation regions extending from the first surface into the drift region and forming respective second pn-junctions with the drift region. The first compensation regions form in the active area a lattice comprising a first base vector having a first length. The second compensation regions have, in a horizontal direction parallel to the first surface, a horizontal width which decreases with an increasing vertical distance from the first surface and with a decreasing horizontal distance from the edge.

Abstract: A super junction semiconductor device is formed by forming at least a portion of a drift layer on a doped layer of a first conductivity type, implanting first dopants of a first conductivity type and second dopants of a second conductivity type into the drift layer using one or more implant masks with openings to form stripe-shaped first implant regions of the first conductivity type and stripe-shaped second implant regions of the second conductivity type in alternating order, and performing a heat treatment for controlling a diffusion of dopants from the implant regions to form stripe-shaped first regions of the first conductivity type and stripe-shaped second regions of the second conductivity type.