Abstract: A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.

Abstract: A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.

Abstract: A process for preparing alkanols (I) selected from the group consisting of isopropanol and 2-butanol from the corresponding alkanes (II) selected from the group consisting of propane and n-butane, comprising the steps of: A) providing a starting gas stream a comprising the alkane (II); B) feeding the starting gas stream a comprising the alkane (II) into a dehydrogenation zone and subjecting the alkane (II) to a dehydrogenation to the alkene (III) to obtain a product gas stream b comprising the alkene (III) and unconverted alkane (II), with or without high boilers, steam, hydrogen and low boilers; C) at least compressing product gas stream b, optionally separating product gas stream b into an aqueous phase c1, a phase c2 comprising the alkene (III) and the alkane (II), with or without high boilers, and a gas phase c3 comprising hydrogen and low boilers; D) reacting product gas stream b or the phase c2 comprising alkene (III) and alkane (II) with an organic acid (IV) in an esterification zone to obtain a produ

Abstract: A process for preparing alkanols (I) selected from the group consisting of isopropanol and 2-butanol from the corresponding alkanes (II) selected from the group consisting of propane and n-butane, comprising the steps of: A) providing a starting gas stream a comprising the alkane (II); B) feeding the starting gas stream a comprising the alkane (II) into a dehydrogenation zone and subjecting the alkane (II) to a dehydrogenation to the alkene (III) to obtain a product gas stream b comprising the alkene (III) and unconverted alkane (II), with or without high boilers, steam, hydrogen and low boilers; C) at least compressing product gas stream b, optionally separating product gas stream b into an aqueous phase c1, a phase c2 comprising the alkene (III) and the alkane (II), with or without high boilers, and a gas phase c3 comprising hydrogen and low boilers; D) reacting product gas stream b or the phase c2 comprising alkene (III) and alkane (II) with an organic acid (IV) in an esterification zone to obtain a produ

Abstract: The present invention relates to the use of an ?-amylase obtainable from Thermoactinomyces vulgaris for the production of dough and/or bakery products in which emulsifiers on the basis of monoglycerides are partially or fully dispensed with, and to a method for the production of bakery products comprising no or small amounts of emulsifiers on the basis of monoglycerides characterized in that i) a dough for the respective bakery product is produced in a way known per se, using no or small amounts of emulsifiers on the basis of monoglycerides, ii) an ?-amylase obtainable from Thermoactinomyces vulgaris is added to the dough or a component of the dough, and iii) the dough is processed in a way known per se to ready-to-eat bakery products.

Abstract: A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Ns of charge carriers present in a volume Vs between two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Np of charge carriers present in a volume Vp between two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Ns holds true.

Abstract: A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.

Abstract: A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.

Abstract: A compensation component and a process for production thereof includes a semiconductor body having first and second electrodes, a drift zone disposed therebetween, and areas of a first conductivity type and a second conductivity type opposite the first conductivity type disposed in the drift zone. Higher doped zones of the first type are inlaid in a weaker doped environment of the second type closer to the first electrode and higher doped zones of the second type are inlaid in a weaker doped environment of the first type closer to the second electrode. The drift zone is complementary so that, in a direction between the electrodes, a more highly doped zone of the first type adjoins a more weakly doped environment of the first type, and a more weakly doped environment of the second type adjoins a more highly doped zone of the second type.

Abstract: A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

Abstract: A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.

Abstract: A filter pack is formed of a pleated filter section and a top edge band and a bottom edge band that form a frame. The filter section and the frame are formed of a nonwoven polymer material, preferably a polyester material. The filter section is retained in the frame by an adhesive, preferably also a polyester material. The filter pack provides more filtration media per area, leading to more efficient filtration. The filter pack is fully shreddable and does not require separation into various components for recycling.

Abstract: The invention relates to a semiconductor component with enhanced avalanche ruggedness. At the nominal current of this semiconductor component, in the event of an avalanche the voltage applied between two electrodes is 6 % or more above the static reverse voltage at the same temperature.

Abstract: A filter pack is formed of a pleated filter section and a top edge band and a bottom edge band that form a frame. The filter section and the frame are formed of a nonwoven polymer material, preferably a polyester material. The filter section is retained in the frame by an adhesive, preferably also a polyester material. The filter pack provides more filtration media per area, leading to more efficient filtration. The filter pack is fully shreddable and does not require separation into various components for recycling.

Abstract: The invention relates to a semiconductor component with enhanced avalanche resistance. At the nominal current of this semiconductor component, in the event of an avalanche the voltage applied between two electrodes is 6% or more above the static reverse voltage at the same temperature.

Abstract: A compensation component and a process for production thereof includes a semiconductor body having first and second electrodes, a drift zone disposed therebetween, and areas of a first conductivity type and a second conductivity type opposite the first conductivity type disposed in the drift zone. Higher doped zones of the first type are inlaid in a weaker doped environment of the second type closer to the first electrode and higher doped zones of the second type are inlaid in a weaker doped environment of the first type closer to the second electrode. The drift zone is complementary so that, in a direction between the electrodes, a more highly doped zone of the first type adjoins a more weakly doped environment of the first type, and a more weakly doped environment of the second type adjoins a more highly doped zone of the second type.

Abstract: A minipleat synthetic filter assembly is provided. The filter assembly includes a frame assembly and a section of pleated filter media mounted within the frame assembly. The frame assembly includes a plurality of corner members and an equal plurality of side members interconnecting the corner members. The frame assembly may be made in any desired size and shape to accommodate a wide variety of applications. The section of filter media is a sheet of a synthetic nonwoven material folded to form minipleats having a spacing between adjacent peaks of no greater than 20 mm.

Abstract: A minipleat synthetic filter assembly is provided. The filter assembly includes a frame assembly and a section of pleated filter media mounted within the frame assembly. The frame assembly includes a plurality of corner members and an equal plurality of side members interconnecting the corner members. The frame assembly may be made in any desired size and shape to accommodate a wide variety of applications. The section of filter media is a sheet of a synthetic nonwoven material folded to form minipleats having a spacing between adjacent peaks of no greater than 20 mm.