Patents by Inventor Marta Mottura
Marta Mottura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8987827Abstract: A method for fabricating enhanced-mobility pFET devices having channel lengths below 50 nm. Gates for pFETs may be patterned in dense arrays on a semiconductor substrate that includes shallow trench isolation (STI) structures. Partially-enclosed voids in the semiconductor substrate may be formed at source and drain regions for the gates, and subsequently filled with epitaxially-grown semiconductor that compressively stresses channel regions below the gates. Some of the gates (dummy gates) may extend over edges of the STI structures to prevent undesirable faceting of the epitaxial material in the source and drain regions.Type: GrantFiled: May 31, 2013Date of Patent: March 24, 2015Assignees: STMicroelectronics, Inc., International Business Machines Corporation, GLOBALFOUNDRIES, Inc.Inventors: Pietro Montanini, Raymond Joy, Marta Mottura, Henry K. Utomo
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Publication number: 20140353741Abstract: A method for fabricating enhanced-mobility pFET devices having channel lengths below 50 nm. Gates for pFETs may be patterned in dense arrays on a semiconductor substrate that includes shallow trench isolation (STI) structures. Partially-enclosed voids in the semiconductor substrate may be formed at source and drain regions for the gates, and subsequently filled with epitaxially-grown semiconductor that compressively stresses channel regions below the gates. Some of the gates (dummy gates) may extend over edges of the STI structures to prevent undesirable faceting of the epitaxial material in the source and drain regions.Type: ApplicationFiled: May 31, 2013Publication date: December 4, 2014Inventors: Pietro Montanini, Raymond Joy, Marta Mottura, Henry K. Utomo
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Patent number: 8486741Abstract: The described process allows trenches to be etched in a structure comprising a support substrate and a multilayer, formed on the substrate, for the definition of wave guides of an integrated optical device and comprises a selective plasma attack in the multilayer through a masking structure that leaves uncovered areas of the multilayer corresponding to the trenches to be etched. Such a masking structure is obtained by forming a mask of metallic material on the multilayer that leaves uncovered the areas corresponding to the trenches to be etched and forming a mask of non-metallic material, for example photoresist, on it that leaves uncovered regions comprising at least part of the areas and an edge portion of the mask of metallic material.Type: GrantFiled: May 25, 2012Date of Patent: July 16, 2013Assignee: STMicroelectronics S.r.l.Inventors: Pietro Montanini, Giovanna Germani, Ilaria Gelmi, Marta Mottura
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Patent number: 8476143Abstract: An embodiment of an integrated circuit includes first and second semiconductor layers and a contact region disposed in the second layer. The first semiconductor layer is of a first conductivity, and the second semiconductor layer is disposed over the first layer and has a surface. The contact region is contiguous with the surface, contacts the first layer, includes a first inner conductive portion, and includes an outer conductive portion of the first conductivity. The contact region may extend deeper than conventional contact regions, because where the inner conductive portion is formed from a trench, doping the outer conductive portion via the trench may allow one to implant the dopants more deeply than conventional techniques allow.Type: GrantFiled: January 12, 2012Date of Patent: July 2, 2013Assignee: STMicroelectonics S.r.L.Inventors: Pietro Montanini, Marta Mottura, Giuseppe Croce
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Publication number: 20130017676Abstract: An embodiment of an integrated circuit includes first and second semiconductor layers and a contact region disposed in the second layer. The first semiconductor layer is of a first conductivity, and the second semiconductor layer is disposed over the first layer and has a surface. The contact region is contiguous with the surface, contacts the first layer, includes a first inner conductive portion, and includes an outer conductive portion of the first conductivity. The contact region may extend deeper than conventional contact regions, because where the inner conductive portion is formed from a trench, doping the outer conductive portion via the trench may allow one to implant the dopants more deeply than conventional techniques allow.Type: ApplicationFiled: January 12, 2012Publication date: January 17, 2013Applicant: STMICROELECTRONICS S.R.L.Inventors: Pietro MONTANINI, Marta MOTTURA, Giuseppe CROCE
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Publication number: 20120228260Abstract: The described process allows trenches to be etched in a structure comprising a support substrate and a multilayer, formed on the substrate, for the definition of wave guides of an integrated optical device and comprises a selective plasma attack in the multilayer through a masking structure that leaves uncovered areas of the multilayer corresponding to the trenches to be etched. Such a masking structure is obtained by forming a mask of metallic material on the multilayer that leaves uncovered the areas corresponding to the trenches to be etched and forming a mask of non-metallic material, for example photoresist, on it that leaves uncovered regions comprising at least part of the areas and an edge portion of the mask of metallic material.Type: ApplicationFiled: May 25, 2012Publication date: September 13, 2012Applicant: STMicroelectronics S.r.I.Inventors: Pietro MONTANINI, Giovanna GERMANI, Ilaria GELMI, Marta MOTTURA
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Patent number: 8183098Abstract: A method for manufacturing an integrated electronic device. The method includes providing an SOI substrate having a semiconductor substrate, an insulating layer on the semiconductor substrate, and a semiconductor starting layer on the insulating layer; epitaxially growing the starting layer to obtain a semiconductor active layer on the insulating layer for integrating components of the device, and forming at least one contact trench extending from an exposed surface of the starting layer to the semiconductor substrate before the step of epitaxially growing the starting layer, wherein each contact trench clears a corresponding portion of the starting layer, of the insulating layer and of the semiconductor substrate, the epitaxial growing being further applied to the cleared portions thereby at least partially filling the at least one contact trench with semiconductor material.Type: GrantFiled: November 2, 2009Date of Patent: May 22, 2012Assignee: STMicroelectronics S.r.l.Inventors: Pietro Montanini, Giuseppe Ammendola, Riccardo Depetro, Marta Mottura
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Patent number: 8124865Abstract: A method of fabricating a wafer-size photovoltaic cell module includes defining an integrated cellular structure of a light converting monolateral or bilateral junction diode in an epitaxially grown detachable layer including a first deposited metal current collecting terminal of the diode. The method also includes laminating onto the surface of the processed epitaxially grown detachable layer a film of an optical grade plastic material resistant to hydrofluoric acid solutions. The method further includes immersing the wafer in a hydrofluoric acid solution causing detachment of the epitaxially grown silicon layer laminated with the film, and polishing the surface of separation of the detached epitaxially grown layer and forming a second metal current collecting terminal of the diode by masked deposition of a metal at a temperature tolerable by the film.Type: GrantFiled: November 16, 2005Date of Patent: February 28, 2012Assignee: STMicroelectronics S.R.L.Inventors: Pietro Montanini, Paolo Riboli, Luca Zanotti, Michele Palmieri, Marta Mottura
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Patent number: 8115314Abstract: An embodiment of an integrated circuit includes first and second semiconductor layers and a contact region disposed in the second layer. The first semiconductor layer is of a first conductivity, and the second semiconductor layer is disposed over the first layer and has a surface. The contact region is contiguous with the surface, contacts the first layer, includes a first inner conductive portion, and includes an outer conductive portion of the first conductivity. The contact region may extend deeper than conventional contact regions, because where the inner conductive portion is formed from a trench, doping the outer conductive portion via the trench may allow one to implant the dopants more deeply than conventional techniques allow.Type: GrantFiled: December 15, 2008Date of Patent: February 14, 2012Assignee: STMicroelectronics S.r.l.Inventors: Pietro Montanini, Marta Mottura, Giuseppe Croce
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Patent number: 7999349Abstract: An electronic device is proposed. The device is integrated in a chip including at least one stacked layer having a front surface and a rear surface opposite the front surface, the device including: an insulating trench insulating an active region of the chip, the insulating trench having a section across each plane parallel to the front surface extending along a longitudinal line, and a front-rear contact electrically contacting the front surface to the rear surface in the active region, wherein the section of the insulating trench has a non-uniform width along the longitudinal line, and/or the device further includes at least one further insulating trench within the active region.Type: GrantFiled: June 27, 2007Date of Patent: August 16, 2011Assignee: STMicroelectronics S.r.l.Inventors: Pietro Montanini, Fabrizio Fausto Renzo Toia, Marta Mottura
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Publication number: 20100075484Abstract: A method for manufacturing an integrated electronic device. The method includes providing an SOI substrate having a semiconductor substrate, an insulating layer on the semiconductor substrate, and a semiconductor starting layer on the insulating layer; epitaxially growing the starting layer to obtain a semiconductor active layer on the insulating layer for integrating components of the device, and forming at least one contact trench extending from an exposed surface of the starting layer to the semiconductor substrate before the step of epitaxially growing the starting layer, wherein each contact trench clears a corresponding portion of the starting layer, of the insulating layer and of the semiconductor substrate, the epitaxial growing being further applied to the cleared portions thereby at least partially filling the at least one contact trench with semiconductor material.Type: ApplicationFiled: November 2, 2009Publication date: March 25, 2010Applicant: STMicroelectronics S.r.l.Inventors: Pietro Montanini, Giuseppe Ammendola, Riccardo Depetro, Marta Mottura
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Patent number: 7595223Abstract: A process for bonding two distinct substrates that integrate microsystems, including the steps of forming micro-integrated devices in at least one of two substrates using micro-electronic processing techniques and bonding the substrates. Bonding is performed by forming on a first substrate bonding regions of deformable material and pressing the substrates one against another so as to deform the bonding regions and to cause them to react chemically with the second substrate. The bonding regions are preferably formed by a thick layer of a material chosen from among aluminum, copper and nickel, covered by a thin layer of a material chosen from between palladium and platinum. Spacing regions ensure exact spacing between the two wafers.Type: GrantFiled: June 21, 2007Date of Patent: September 29, 2009Assignees: STMicroelectronics S.r.l., Hewlett-Packard CompanyInventors: Ubaldo Mastromatteo, Mauro Bombonati, Daniela Morin, Marta Mottura, Mauro Marchi
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Publication number: 20090152733Abstract: An embodiment of an integrated circuit includes first and second semiconductor layers and a contact region disposed in the second layer. The first semiconductor layer is of a first conductivity, and the second semiconductor layer is disposed over the first layer and has a surface. The contact region is contiguous with the surface, contacts the first layer, includes a first inner conductive portion, and includes an outer conductive portion of the first conductivity. The contact region may extend deeper than conventional contact regions, because where the inner conductive portion is formed from a trench, doping the outer conductive portion via the trench may allow one to implant the dopants more deeply than conventional techniques allow.Type: ApplicationFiled: December 15, 2008Publication date: June 18, 2009Applicant: STMicroelectronics S.r.l.Inventors: Pietro Montanini, Marta Mottura, Giuseppe Croce
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Publication number: 20080017949Abstract: An electronic device is proposed. The device is integrated in a chip including at least one stacked layer having a front surface and a rear surface opposite the front surface, the device including: an insulating trench insulating an active region of the chip, the insulating trench having a section across each plane parallel to the front surface extending along a longitudinal line, and a front-rear contact electrically contacting the front surface to the rear surface in the active region, wherein the section of the insulating trench has a non-uniform width along the longitudinal line, and/or the device further includes at least one further insulating trench within the active region.Type: ApplicationFiled: June 27, 2007Publication date: January 24, 2008Inventors: Pietro Montanini, Fabrizio Toia, Marta Mottura
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Publication number: 20070296036Abstract: A method for manufacturing an integrated electronic device. The method includes providing an SOI substrate having a semiconductor substrate, an insulating layer on the semiconductor substrate, and a semiconductor starting layer on the insulating layer; epitaxially growing the starting layer to obtain a semiconductor active layer on the insulating layer for integrating components of the device, and forming at least one contact trench extending from an exposed surface of the starting layer to the semiconductor substrate before the step of epitaxially growing the starting layer, wherein each contact trench clears a corresponding portion of the starting layer, of the insulating layer and of the semiconductor substrate, the epitaxial growing being further applied to the cleared portions thereby at least partially filling the at least one contact trench with semiconductor material.Type: ApplicationFiled: June 19, 2007Publication date: December 27, 2007Applicant: STMicroelectronics S.r.I.Inventors: Pietro Montanini, Giuseppe Ammendola, Riccardo Depetro, Marta Mottura
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Publication number: 20070254454Abstract: A process for bonding two distinct substrates that integrate microsystems, including the steps of forming micro-integrated devices in at least one of two substrates using micro-electronic processing techniques and bonding the substrates. Bonding is performed by forming on a first substrate bonding regions of deformable material and pressing the substrates one against another so as to deform the bonding regions and to cause them to react chemically with the second substrate. The bonding regions are preferably formed by a thick layer of a material chosen from among aluminum, copper and nickel, covered by a thin layer of a material chosen from between palladium and platinum. Spacing regions ensure exact spacing between the two wafers.Type: ApplicationFiled: June 21, 2007Publication date: November 1, 2007Applicant: STMICROELECTRONICS S.R.L.Inventors: Ubaldo Mastromatteo, Mauro Bombonati, Daniela Morin, Marta Mottura, Mauro Marchi
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Publication number: 20060118164Abstract: A method of fabricating a wafer-size photovoltaic cell module includes defining an integrated cellular structure of a light converting monolateral or bilateral junction diode in an epitaxially grown detachable layer including a first deposited metal current collecting terminal of the diode. The method also includes laminating onto the surface of the processed epitaxially grown detachable layer a film of an optical grade plastic material resistant to hydrofluoric acid solutions. The method further includes immersing the wafer in a hydrofluoric acid solution causing detachment of the epitaxially grown silicon layer laminated with the film, and polishing the surface of separation of the detached epitaxially grown layer and forming a second metal current collecting terminal of the diode by masked deposition of a metal at a temperature tolerable by the film.Type: ApplicationFiled: November 16, 2005Publication date: June 8, 2006Applicant: STMicroelectronics S.r.l.Inventors: Pietro Montanini, Paolo Riboli, Luca Zanotti, Michele Palmieri, Marta Mottura
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Publication number: 20060096324Abstract: A waveguide includes a substrate, lower cladding having a decreasing cross-section, and a core having an increasing cross-section. The lower cladding is formed on a substrate, and the waveguide core is formed on the lower cladding. The waveguide core includes a first tract of constant thickness and a second tract of varying thickness, and finally side and upper cladding of the waveguide is formed. In order to obtain a waveguide having a segment of varying thickness in an easy, controlled and adiabatic manner, two series of operations are carried out to form the lower cladding and the core.Type: ApplicationFiled: November 3, 2005Publication date: May 11, 2006Inventors: Pietro Montani, Matteo Garavaglia, Fabio Fusari, Marta Mottura
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Publication number: 20060068554Abstract: The described process allows trenches to be etched in a structure comprising a support substrate and a multilayer, formed on the substrate, for the definition of wave guides of an integrated optical device and comprises a selective plasma attack in the multilayer through a masking structure that leaves uncovered areas of the multilayer corresponding to the trenches to be etched. Such a masking structure is obtained by forming a mask of metallic material on the multilayer that leaves uncovered the areas corresponding to the trenches to be etched and forming a mask of non-metallic material, for example photoresist, on it that leaves uncovered regions comprising at least part of the areas and an edge portion of the mask of metallic material.Type: ApplicationFiled: September 19, 2005Publication date: March 30, 2006Inventors: Pietro Montanini, Giovanna Germani, Ilaria Gelmi, Marta Mottura
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Patent number: 6869856Abstract: A process for manufacturing a semiconductor wafer integrating electronic devices and a structure for electromagnetic decoupling are disclosed. The method includes providing a wafer of semiconductor material having a substrate; forming a plurality of first mutually adjacent trenches, open on a first face of the wafer, which have a depth and a width and define walls); by thermal oxidation, completely oxidizing the walls and filling at least partially the first trenches, so as to form an insulating structure of dielectric material; and removing one portion of the substrate comprised between the insulating structure and a second face of the wafer, opposite to the first face of the wafer.Type: GrantFiled: October 29, 2002Date of Patent: March 22, 2005Assignee: STMicroelectronics S.r.l.Inventors: Chantal Combi, Matteo Fiorito, Marta Mottura, Giuseppe Visalli, Benedetto Vigna