Patents by Inventor Martha Truninger

Martha Truninger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Droplet plate architecture
    Publication number: 20030011659
    Abstract: A process for fabricating a droplet plate for the printhead of an inkjet printer, which process provides design flexibility, precise dimension control, as well as material robustness. Also provided is a droplet plate fabricated in accord with the process.
    Type: Application
    Filed: September 16, 2002
    Publication date: January 16, 2003
    Inventors: Ravi Ramaswami, Victor Joseph, Colin C. Davis, Ronnie J. Yenchik, Daniel A. Kearl, Martha A. Truninger, Roberto A. Pugliese, Ronald L. Enck
  • Droplet plate architecture in ink-jet printheads
    Patent number: 6482574
    Abstract: A process for fabricating a droplet plate for the printhead of an ink-jet printer, which process provides design flexibility, precise dimension control, as well as material robustness. Also provided is a droplet plate fabricated in accord with the process.
    Type: Grant
    Filed: April 20, 2000
    Date of Patent: November 19, 2002
    Assignee: Hewlett-Packard Co.
    Inventors: Ravi Ramaswami, Victor Joseph, Colin C. Davis, Ronnie J. Yenchik, Daniel A. Kearl, Martha A. Truninger, Roberto A. Pugliese, Jr., Ronald L. Enck
  • Fluid ejection device and method of fabricating
    Patent number: 6481831
    Abstract: An inkjet printhead and a method of fabricating an inkjet printhead is disclosed. The inkjet printhead includes a conducting material layer deposited on an insulative dielectric. The conducting material layer has a chamber formed between a first and a second section of the conducting material layer. A dielectric material is fabricated on the first and second sections of the conducting material layer and on the insulative dielectric in the chamber. The dielectric material has a planarized top surface. A first via is formed in the dielectric material, thereby exposing a portion of the first section of the conducting material layer. A second via is formed in the dielectric material, thereby exposing a portion of the second section of the conducting material layer. The first and second vias each having sidewalls sloped at an angle in the range of approximately 10-60 degrees.
    Type: Grant
    Filed: July 7, 2000
    Date of Patent: November 19, 2002
    Assignee: Hewlett-Packard Company
    Inventors: Colin C. Davis, Eric L. Nikkel, Martha A. Truninger, Ronald L. Enck
  • In-situ fluid jet orifice
    Patent number: 6315397
    Abstract: A process for creating and an apparatus employing reentrant (pointing or directed inward) shaped orifices in a semiconductor substrate. A layer of graded dielectric material is deposited on the semiconductor substrate. A masked photoimagable material is deposited upon the graded dielectric material and exposed to electromagnetic energy such that a patterned photoimagable material is created. The patterned photoimagable material is developed to unveil the graded dielectric material which is then anisotropically etched. The bore in the graded dielectric material is then isotropically etched to complete the creation of holes in the substrate.
    Type: Grant
    Filed: December 13, 2000
    Date of Patent: November 13, 2001
    Assignee: Hewlett-Packard Company
    Inventors: Martha Truninger, Phillip R. Coffman, Charles C. Haluzak, John P. Whitlock, Douglas A. Sexton
  • In-situ fluid jet orifice
    Publication number: 20010015737
    Abstract: A process for creating and an apparatus employing reentrant (pointing or directed inward) shaped orifices in a semiconductor substrate. A layer of graded dielectric material is deposited on the semiconductor substrate. A masked photoimagable material is deposited upon the graded dielectric material and exposed to electromagnetic energy such that a patterned photoimagable material is created. The patterned photoimagable material is developed to unveil the graded dielectric material which is then anisotropically etched. The bore in the graded dielectric material is then isotropically etched to complete the creation of holes in the substrate.
    Type: Application
    Filed: December 13, 2000
    Publication date: August 23, 2001
    Inventors: Martha Truninger, Phillip R. Coffman, Charles C. Haluzak, John P. Whitlock, Douglas A. Sexton
  • In-situ fluid jet orifice
    Patent number: 6204182
    Abstract: A process for creating and an apparatus employing reentrant (pointing or directed inward) shaped orifices in a semiconductor substrate. A layer of graded dielectric material is deposited on the semiconductor substrate. A masked photoimagable material is deposited upon the graded dielectric material and exposed to electromagnetic energy such that a patterned photoimagable material is created. The patterned photoimagable material is developed to unveil the graded dielectric material which is then anisotropically etched. The bore in the graded dielectric material is then isotropically etched to complete the creation of holes in the substrate.
    Type: Grant
    Filed: March 2, 1998
    Date of Patent: March 20, 2001
    Assignee: Hewlett-Packard Company
    Inventors: Martha Truninger, Phillip R. Coffman, Charles C. Haluzak, John P. Whitlock, Douglas A. Sexton