Abstract: An optoelectronic semiconductor device comprises an active zone comprising sub-layers for forming a quantum well structure. Differences in energy levels of the quantum well structure are smaller in a central region of the optoelectronic semiconductor device than in an edge region of the optoelectronic semiconductor device. According to further embodiments, an optoelectronic semiconductor device comprises an active zone comprising a sub-layer which is suitable for forming a quantum well structure. In the active zone, quantum dot structures are formed in a central region of the optoelectronic semiconductor device. No quantum dot structures are formed in an edge region of the optoelectronic semiconductor device.

Abstract: A radiation-emitting semiconductor chip may include a semiconductor layer sequence having a first semiconductor layer and a second semiconductor layer, a first metallic mirror with which charge carriers can be embedded into the first semiconductor layer, a first metallic contact layer disposed atop the first metallic mirror, and a second metallic contact layer disposed atop the first metallic contact layer. A first seed layer may be disposed between the first metallic contact layer and the first metallic mirror. A second seed layer may be disposed between the first metallic contact layer and the second metallic contact layer. The radiation-emitting semiconductor chip may include a radiation exit face having a multitude of emission regions. The first metallic mirror may have a multitude of cutouts that each define a lateral extent of one of the emission regions.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: An optoelectronic component comprising at least one semiconductor element having an active region adapted to generate light is proposed. the device comprises a dielectric filter disposed above a first major surface of the at least one semiconductor element and adapted to transmit light only in pre-planar directions, and a reflective material disposed on at least one side surface of the at least one semiconductor element and on at least one side surface of the dielectric filter.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: An optoelectronic semiconductor device comprises an active zone comprising sub-layers for forming a quantum well structure. Differences in energy levels of the quantum well structure are smaller in a central region of the optoelectronic semiconductor device than in an edge region of the optoelectronic semiconductor device. According to further embodiments, an optoelectronic semiconductor device comprises an active zone comprising a sub-layer which is suitable for forming a quantum well structure. In the active zone, quantum dot structures are formed in a central region of the optoelectronic semiconductor device. No quantum dot structures are formed in an edge region of the optoelectronic semiconductor device.

Abstract: An optoelectronic semiconductor component comprises a first resonator mirror, an active region suitable for generating radiation, and a second resonator mirror, which are arranged one above another in each case along a first direction. The optoelectronic semiconductor component furthermore comprises a refractive index modulation layer within an optical resonator between the first resonator mirror and the second resonator mirror. The refractive index modulation layer comprises first regions of a first material having a first refractive index and also second regions of a second material having a second refractive index, wherein the first regions are arranged directly adjacent to the second regions in a plane perpendicular to the first direction.

Abstract: An optoelectronic semiconductor component has a first semiconductor layer of a p-conductivity type, a second semiconductor layer of an n-conductivity type and also an n-doped current distribution layer containing ZnSe and adjoining the second semiconductor layer.

Abstract: An optoelectronic circuit assembly has a first optoelectronic component and a second optoelectronic component, wherein the optoelectronic components each comprise a housing body with an upper face and a lower face, wherein in the housing body of each optoelectronic component, a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are embedded, wherein the optoelectronic components are mounted on a circuit board, wherein the first optoelectronic semiconductor chip of the first optoelectronic component and the first optoelectronic semiconductor chip of the second optoelectronic component are connected to a first conductor track in an electrically conductive manner, wherein the second optoelectronic semiconductor chip of the first optoelectronic component and the second optoelectronic semiconductor chip of the second optoelectronic component are connected to a second conductor track in an electrically conductive manner, wherein the first optoelectronic semiconductor chip or the

Abstract: A method for producing a semiconductor component and workpiece are disclosed. In an embodiment a method includes forming a first semiconductor layer over a growth substrate, wherein a material of the first semiconductor layer is Inx1Aly1Ga(1-x1-y1)N, with 0?xl?1, 0?yl?1, applying a first modification substrate over the first semiconductor layer, wherein a material of the first modification substrate has a thermal expansion coefficient which is different from that of the first semiconductor layer, removing the growth substrate thereby obtaining a first layer stack, heating the first layer stack to a first growth temperature and growing a second semiconductor layer over a growth surface of the first semiconductor layer after heating the first layer stack, wherein due to heating a lattice constant of the first semiconductor layer is adapted to a lattice constant of the second semiconductor layer.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: An optoelectronic circuit assembly has a first optoelectronic component and a second optoelectronic component, wherein the optoelectronic components each comprise a housing body with an upper face and a lower face, wherein in the housing body of each optoelectronic component, a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are embedded, wherein the optoelectronic components are mounted on a circuit board, wherein the first optoelectronic semiconductor chip of the first optoelectronic component and the first optoelectronic semiconductor chip of the second optoelectronic component are connected to a first conductor track in an electrically conductive manner, wherein the second optoelectronic semiconductor chip of the first optoelectronic component and the second optoelectronic semiconductor chip of the second optoelectronic component are connected to a second conductor track in an electrically conductive manner, wherein the first optoelectronic semiconductor chip or the