Abstract: There is provided an improved method for the recovery of residual, unseparated ?-ACF from reaction mixtures remaining from an initial synthesis of ACF, which is in particular usable on a large industrial scale, more particularly in the production of capecitabine.

Abstract: There is provided an improved method for the recovery of residual, unseparated ?-ACF from reaction mixtures remaining from an initial synthesis of ACF, which is in particular usable on a large industrial scale, more particularly in the production of capecitabine.

Abstract: A laser device having a semiconductor body (1), which has a plurality of active layers (5, 9) arranged vertically one above the other and serving for generating laser radiation. The active layers are subdivided in the transverse direction into a plurality of emission zones (15) and are electrically connected in series in the vertical direction. The semiconductor body (1) is formed in monolithic integrated fashion, and a cooling element (2) is provided on which the semiconductor body (1) is arranged.

Abstract: An electronic device according to the invention includes a housing, a recess containing an optoelectronic component, and a film including a polyimide, which is over the recess covering the optoelectronic component.

Abstract: A device for emission of laser radiation includes at least one semiconductor laser having a resonator and a pumped active zone disposed within the resonator. The zone is subdivided into at least two spatially separated active zones by free-radiation regions without lateral wave guidance. Preferably, the laser is at least two semiconductor lasers disposed in series, a row, or a line, each having an antireflection coating on at least one side. The lasers have outer mirror elements at an end of the lasers disposed in series and the outer mirror elements form the resonator. A laser configuration includes two opposite semiconductor lasers from which a fundamental mode is in each case imaged into the active zone of the opposite semiconductor laser. The laser configuration has an emerging laser beam with little divergence.

Abstract: A radiation-emitting optoelectronic component (1) which is connected to a heat sink (3) and is intended for pulsed operation with the pulse duration D, and in which temperature changes of the optoelectronic component (1) take place with a thermal time constant ? during pulsed operation. The thermal time constant ? is matched to the pulse duration D in order to reduce the amplitude of the temperature changes.

Abstract: A laser diode component comprising a laser diode bar on which a specific operating voltage is impressed during operation and with which a bridging element is connected in parallel, which bridging element is in a current-blocking state when the specific operating voltage is impressed on the associated laser diode bar and which bridging element changes over to a current-conducting state as soon as the voltage drop across the laser diode bar exceeds the operating voltage by a predefined voltage value. A circuit arrangement comprising a plurality of such laser diode components which are connected in series is furthermore specified.

Abstract: The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate (1). A first diode laser (12) is arranged on the substrate (1), and a second diode laser (13) is arranged on the first diode laser (12). Between the first diode laser (12) and the second diode laser (13) there is a contact layer (6). The contact layer (6) comprises a first conductive layer (18) of a first conduction type and a second conductive layer (20) of a second conduction type and an interlayer (19) which is arranged between the first and second conductive layers (18, 20).

Abstract: A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.

Abstract: A laser device having a semiconductor body (1), which has a plurality of active layers (5, 9) arranged vertically one above the other and serving for generating laser radiation. The active layers are subdivided in the transverse direction into a plurality of emission zones (15) and are electrically connected in series in the vertical direction. The semiconductor body (1) is formed in monolithic integrated fashion, and a cooling element (2) is provided on which the semiconductor body (1) is arranged.

Abstract: The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate (1). A first diode laser (12) is arranged on the substrate (1), and a second diode laser (13) is arranged on the first diode laser (12). Between the first diode laser (12) and the second diode laser (13) there is a contact layer (6). The contact layer (6) comprises a first conductive layer (18) of a first conduction type and a second conductive layer (20) of a second conduction type and an interlayer (19) which is arranged between the first and second conductive layers (18, 20).

Abstract: A compactly constructed configuration for coupling radiation into an optical fiber in a highly effective manner has a semiconductor laser with a radiation exit window, and an optical fiber having a radiation entry end. The radiation exit window of the semiconductor laser faces the radiation entry end of the optical fiber. A resonator is provided and has an end mirror and an output mirror, between which the semiconductor laser is disposed. The output mirror of the resonator is formed by the optical fiber. An optical device is disposed between the semiconductor laser and the optical fiber and serves for imaging only the fundamental mode of the radiation of the semiconductor laser onto the radiation entry end of the optical fiber.

Abstract: A device for emission of laser radiation includes at least one semiconductor laser having a resonator and a pumped active zone disposed within the resonator. The zone is subdivided into at least two spatially separated active zones by free-radiation regions without lateral wave guidance. Preferably, the laser is at least two semiconductor lasers disposed in series, a row, or a line, each having an antireflection coating on at least one side. The lasers have outer mirror elements at an end of the lasers disposed in series and the outer mirror elements form the resonator. A laser configuration includes two opposite semiconductor lasers from which a fundamental mode is in each case imaged into the active zone of the opposite semiconductor laser. The laser configuration has an emerging laser beam with little divergence.

Abstract: A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.

Abstract: A compactly constructed configuration for coupling radiation into an optical fiber in a highly effective manner has a semiconductor laser with a radiation exit window, and an optical fiber having a radiation entry end. The radiation exit window of the semiconductor laser faces the radiation entry end of the optical fiber. A resonator is provided and has an end mirror and an output mirror, between which the semiconductor laser is disposed. The output mirror of the resonator is formed by the optical fiber. An optical device is disposed between the semiconductor laser and the optical fiber and serves for imaging only the fundamental mode of the radiation of the semiconductor laser onto the radiation entry end of the optical fiber.