Patents by Inventor Martin Burkhardt

Martin Burkhardt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10868254
    Abstract: The present invention relates to phosphorescent organic light-emitting diodes (OLEDs) including a hole-transporting or a hole-transporting and an electron-blocking layer including an N,N,N?,N?-tetraaryl-phenylene-3,5-diamine or an N,N,N?,N?-tetraaryl-1,1?-biphenyl-3,3?-diamine matrix compound and to new N,N,N?,N?-tetraarylsubstituted m-arylene diamine compounds useful as hole-transporting and electron-blocking layer matrices in phosphorescent OLEDs.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: December 15, 2020
    Assignee: Novaled GmbH
    Inventors: Mike Zöllner, Jens Wutke, Martin Burkhardt
  • Patent number: 10706200
    Abstract: A method for generating physical design layout patterns includes selecting as training data one or more physical design layout patterns of integrated multi-layers for features in at least two layers of a given patterned structure. The method also includes converting the physical design layout patterns into three-dimensional arrays, a given three-dimensional array comprising a set of two-dimensional arrays each representing features of one layer of the layers in a given one of the physical design layout patterns. The method further includes training, utilizing the three-dimensional arrays, a generative adversarial network (GAN) comprising a discriminator neural network and a generator neural network. The method further includes generating synthetic three-dimensional arrays utilizing the generator neural network of the trained GAN, a given synthetic three-dimensional array comprising a set of two-dimensional arrays each representing features for a new layer of a new physical design layout pattern.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: July 7, 2020
    Assignee: International Business Machines Corporation
    Inventors: Jing Sha, Michael A. Guillorn, Martin Burkhardt, Derren N. Dunn
  • Patent number: 10699055
    Abstract: A method for generating physical design layout patterns includes selecting as training data a set of physical design layout patterns of features in a given layer of a given patterned structure and converting the physical design layout patterns into two-dimensional (2D) arrays comprising entries for different locations in the given layer of the given patterned structure with values representing presence of the features at the different locations. The method also includes training, utilizing the 2D arrays, a generative adversarial network (GAN) comprising a discriminator neural network and a generator neural network. The method further includes generating one or more synthetic 2D arrays utilizing the trained generator neural network of the GAN, a given synthetic 2D array comprising entries for different locations in the given layer of a new physical design layout pattern with values representing presence of the features at the different locations of the new physical design layout pattern.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: June 30, 2020
    Assignee: International Business Machines Corporation
    Inventors: Jing Sha, Michael A. Guillorn, Martin Burkhardt, Derren N. Dunn
  • Publication number: 20200151538
    Abstract: According to one or more embodiments of the present invention a computer-implemented method for fabricating a chip includes generating, using an aerial image generation system, a set of aerial images for a chip layout, the set of aerial images including an aerial image corresponding to each region from the chip layout. The method further includes automatically determining, using an artificial neural network, a feature vector for each aerial image from the set of aerial images. The method further includes clustering the aerial images using their corresponding feature vectors. The method further includes selecting, as test samples, a predetermined number of aerial images from each cluster. The method further includes performing a pattern coverage inspection of the chip layout using the aerial images that are selected as test samples.
    Type: Application
    Filed: November 13, 2018
    Publication date: May 14, 2020
    Inventors: Jing Sha, Martin Burkhardt, Sean Burns
  • Patent number: 10621302
    Abstract: Methods and systems for fabricating an integrated circuit include training a machine learning model using a training set that includes known physical design layout patterns that are classified according to whether the patterns include a hotspot. It is determined whether an input physical design layout pattern includes a hotspot using the machine learning model. A hotspot localization is generated for the input physical design layout patterns. The input physical design pattern is adjusted to cure the hotspot. A circuit is fabricated in accordance with the adjusted input physical design layout pattern.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: April 14, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jing Sha, Dongbing Shao, Martin Burkhardt, Michael A. Guillorn
  • Patent number: 10539881
    Abstract: A method for generating physical design layout patterns includes selecting as training data a set of physical design layout patterns of patterned structures. The method also includes training, utilizing physical design layout patterns containing hotspots, a first neural network model configured to generate synthetic physical design layout patterns, and training, utilizing physical design layout patterns that do and do not contain hotspots, a second neural network model configured to classify whether physical design layout patterns contain hotspots. The method further includes generating synthetic physical design layout patterns containing hotspots by utilizing the trained first neural network model to generate synthetic physical design layout patterns and utilizing the trained second neural network model to select the synthetic physical design layout patterns containing hotspots.
    Type: Grant
    Filed: September 24, 2018
    Date of Patent: January 21, 2020
    Assignee: International Business Machines Corporation
    Inventors: Jing Sha, Dongbing Shao, Martin Burkhardt, Sean Burns
  • Publication number: 20200004918
    Abstract: Methods and systems for fabricating an integrated circuit include training a machine learning model using a training set that includes known physical design layout patterns that are classified according to whether the patterns include a hotspot. It is determined whether an input physical design layout pattern includes a hotspot using the machine learning model. A hotspot localization is generated for the input physical design layout patterns. The input physical design pattern is adjusted to cure the hotspot. A circuit is fabricated in accordance with the adjusted input physical design layout pattern.
    Type: Application
    Filed: June 27, 2018
    Publication date: January 2, 2020
    Inventors: Jing Sha, Dongbing Shao, Martin Burkhardt, Michael A. Guillorn
  • Publication number: 20190377849
    Abstract: A method for generating physical design layout patterns includes selecting as training data a set of physical design layout patterns of features in a given layer of a given patterned structure and converting the physical design layout patterns into two-dimensional (2D) arrays comprising entries for different locations in the given layer of the given patterned structure with values representing presence of the features at the different locations. The method also includes training, utilizing the 2D arrays, a generative adversarial network (GAN) comprising a discriminator neural network and a generator neural network. The method further includes generating one or more synthetic 2D arrays utilizing the trained generator neural network of the GAN, a given synthetic 2D array comprising entries for different locations in the given layer of a new physical design layout pattern with values representing presence of the features at the different locations of the new physical design layout pattern.
    Type: Application
    Filed: June 12, 2018
    Publication date: December 12, 2019
    Inventors: Jing Sha, Michael A. Guillorn, Martin Burkhardt, Derren N. Dunn
  • Publication number: 20190370432
    Abstract: A method for generating physical design layout patterns of integrated multi-layers includes selecting as training data one or more physical design layout patterns of integrated multi-layers for features in at least two layers of a given patterned structure. The method also includes converting the physical design layout patterns into three-dimensional arrays, a given three-dimensional array comprising a set of two-dimensional arrays each representing features of one of the layers in a given physical design layout pattern. The method further includes training, utilizing the three-dimensional arrays, a generative adversarial network (GAN) comprising a discriminator neural network and a generator neural network.
    Type: Application
    Filed: June 5, 2018
    Publication date: December 5, 2019
    Inventors: Jing Sha, Michael A. Guillorn, Martin Burkhardt, Derren N. Dunn
  • Publication number: 20190198767
    Abstract: The present invention relates to phosphorescent organic light-emitting diodes (OLEDs) including a hole-transporting or a hole-transporting and an electron-blocking layer including an N,N,N?,N?-tetraaryl-phenylene-3,5-diamine or an N,N,N?,N?-tetraaryl-1,1?-biphenyl-3,3?-diamine matrix compound and to new N,N,N?,N?-tetraarylsubstituted m-arylene diamine compounds useful as hole-transporting and electron-blocking layer matrices in phosphorescent OLEDs.
    Type: Application
    Filed: March 1, 2019
    Publication date: June 27, 2019
    Inventors: Mike Zöllner, Jens Wutke, Martin Burkhardt
  • Patent number: 10243146
    Abstract: The present invention relates to phosphorescent organic light-emitting diodes (OLEDs) comprising a hole-transporting or a hole-transporting and an electron-blocking layer comprising an N,N,N?,N?-tetraaryl-phenylene-3,5-diamine or an N,N,N?,N?-tetraaryl-1,1?-biphenyl-3,3?-diamine matrix compound and to new N,N,N?,N?-tetraarylsubstituted m-arylene diamine compounds useful as hole-transporting and electron-blocking layer matrices in phosphorescent OLEDs.
    Type: Grant
    Filed: October 17, 2013
    Date of Patent: March 26, 2019
    Assignee: Novaled GmbH
    Inventors: Mike Zoellner, Jens Wutke, Martin Burkhardt
  • Patent number: 10012898
    Abstract: Obtaining optimal focus for exposing a photoresist in an EUV lithography with an EUV mask containing a pattern with an assist feature is disclosed. The EUV mask contains a repeating pattern, wherein the repeating pattern has two different pitches, i.e. a first pitch and a second pitch, and contains an assist feature between main features. Because the two different pitches have different focus offsets, the difference between linewidths of said gratings provides a calibration curve which is a measure of focus. The method for monitoring focus is performing a EUV exposure using a focus position with a pre-determined focus position as calibrated using the linewidth difference between the two gratings. The EUV mask for monitoring focus of present invention is applicable to both test and product masks.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: July 3, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Timothy Allan Brunner, Martin Burkhardt
  • Patent number: 9921466
    Abstract: Obtaining optimal focus for exposing a photoresist in an EUV lithography with an EUV mask containing a pattern with an assist feature is disclosed. The EUV mask contains a repeating pattern, wherein the repeating pattern has two different pitches, i.e. a first pitch and a second pitch, and contains an assist feature between main features. Because the two different pitches have different focus offsets, the difference between linewidths of said gratings provides a calibration curve which is a measure of focus. The method for monitoring focus is performing a EUV exposure using a focus position with a pre-determined focus position as calibrated using the linewidth difference between the two gratings. The EUV mask for monitoring focus of present invention is applicable to both test and product masks.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: March 20, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Timothy Allan Brunner, Martin Burkhardt
  • Publication number: 20180074395
    Abstract: Obtaining optimal focus for exposing a photoresist in an EUV lithography with an EUV mask containing a pattern with an assist feature is disclosed. The EUV mask contains a repeating pattern, wherein the repeating pattern has two different pitches, i.e. a first pitch and a second pitch, and contains an assist feature between main features. Because the two different pitches have different focus offsets, the difference between linewidths of said gratings provides a calibration curve which is a measure of focus. The method for monitoring focus is performing a EUV exposure using a focus position with a pre-determined focus position as calibrated using the linewidth difference between the two gratings. The EUV mask for monitoring focus of present invention is applicable to both test and product masks.
    Type: Application
    Filed: November 22, 2017
    Publication date: March 15, 2018
    Inventors: TIMOTHY ALLAN BRUNNER, MARTIN BURKHARDT
  • Publication number: 20170192364
    Abstract: Obtaining optimal focus for exposing a photoresist in an EUV lithography with an EUV mask containing a pattern with an assist feature is disclosed. The EUV mask contains a repeating pattern, wherein the repeating pattern has two different pitches, i.e. a first pitch and a second pitch, and contains an assist feature between main features. Because the two different pitches have different focus offsets, the difference between linewidths of said gratings provides a calibration curve which is a measure of focus. The method for monitoring focus is performing a EUV exposure using a focus position with a pre-determined focus position as calibrated using the linewidth difference between the two gratings. The EUV mask for monitoring focus of present invention is applicable to both test and product masks.
    Type: Application
    Filed: January 25, 2017
    Publication date: July 6, 2017
    Inventors: TIMOTHY ALLAN BRUNNER, MARTIN BURKHARDT
  • Publication number: 20170110668
    Abstract: The present invention relates to organic light-emitting diodes (OLEDs) comprising at least one substantially organic layer comprising 1,N,N,N?,N?-pentakis(1,1?-biphenyl-4-yl)-phenylene-3,5-diamine matrix compound and to new 1,N,N,N?,N?-pentakis(1,1?-bi-phenyl-4-yl)-phenylene-3,5-diamine compound useful especially as hole-transporting and/or electron-blocking layer matrix in OLEDs.
    Type: Application
    Filed: March 23, 2015
    Publication date: April 20, 2017
    Inventors: Martin Burkhardt, Mike Zoellner
  • Patent number: 9588440
    Abstract: This invention relates to a method of obtaining optimal focus for exposing a photoresist in an EUV lithography with an EUV mask containing a pattern with an assist feature. The invention also relates to an EUV mask with a special focus test target for monitoring focus in EUV lithography, and a method of fabricating this EUV mask by designing the special focus test target. The EUV mask contains a repeating pattern, wherein the repeating pattern has two different pitches, i.e. a first pitch and a second pitch, and contains an assist feature between main features. Because the two different pitches have different focus offsets, the difference between linewidths of said gratings provides a calibration curve which is a measure of focus. The method for monitoring focus is performing an EUV exposure using a focus position with a pre-determined focus position as calibrated using the linewidth difference between the two gratings.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: March 7, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Timothy Allan Brunner, Martin Burkhardt
  • Patent number: 9551924
    Abstract: This invention relates to a structure for fixing phase effects on EUV mask which contains a repeating pattern with an assist feature, or a pattern with two different sized features in close proximity. The EUV mask with the repeating pattern is capable of printing a group of trenches on a photoresist layer. The invention also relates to a method of fabricating an EUV mask for fixing phase effects. The EUV mask contains an absorber layer over the multilayer reflector, and the absorber layer is patterned to form a mask pattern which contains absorptive regions and reflective regions. The absorber is in the absorptive regions, and a phase shifter is deposited at least in the whole reflective regions of the mask pattern to a thickness capable of correcting phase effects. The phase shifter has an index of refraction value is about equal to or less than that of the absorber. The thickness of the phase shifter is determined by simulation.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: January 24, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Martin Burkhardt, Emily Elizabeth Fisch Gallagher
  • Publication number: 20160238939
    Abstract: This invention relates to a method of obtaining optimal focus for exposing a photoresist in an EUV lithography with an EUV mask containing a pattern with an assist feature. The invention also relates to an EUV mask with a special focus test target for monitoring focus in EUV lithography, and a method of fabricating this EUV mask by designing the special focus test target. The EUV mask contains a repeating pattern, wherein the repeating pattern has two different pitches, i.e. a first pitch and a second pitch, and contains an assist feature between main features. Because the two different pitches have different focus offsets, the difference between linewidths of said gratings provides a calibration curve which is a measure of focus. The method for monitoring focus is performing an EUV exposure using a focus position with a pre-determined focus position as calibrated using the linewidth difference between the two gratings.
    Type: Application
    Filed: February 12, 2015
    Publication date: August 18, 2016
    Inventors: Timothy Allan Brunner, Martin Burkhardt
  • Publication number: 20160238924
    Abstract: This invention relates to a structure for fixing phase effects on EUV mask which contains a repeating pattern with an assist feature, or a pattern with two different sized features in close proximity. The EUV mask with the repeating pattern is capable of printing a group of trenches on a photoresist layer. The invention also relates to a method of fabricating an EUV mask for fixing phase effects. The EUV mask contains an absorber layer over the multilayer reflector, and the absorber layer is patterned to form a mask pattern which contains absorptive regions and reflective regions. The absorber is in the absorptive regions, and a phase shifter is deposited at least in the whole reflective regions of the mask pattern to a thickness capable of correcting phase effects. The phase shifter has an index of refraction value is about equal to or less than that of the absorber. The thickness of the phase shifter is determined by simulation.
    Type: Application
    Filed: February 12, 2015
    Publication date: August 18, 2016
    Inventors: Martin Burkhardt, Emily Elizabeth Fisch Gallagher