Abstract: Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.

Abstract: A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.

Abstract: Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.

Abstract: A method of forming shallow trench isolation on a substrate using a gas cluster ion beam (GCIB) is described. The method comprises generating a GCIB, and irradiating the substrate with the GCIB to form a shallow trench isolation structure by depositing a dielectric layer in at least one region on the substrate.

Abstract: A method for selectively etching areas of a substrate is described. The method includes providing in a process chamber a substrate containing a first material having a film deposition surface and a second material having an etch surface. The method further includes forming a gas cluster ion beam (GCIB) from a pressurized gas containing a deposition-etch gas, and exposing the substrate to the GCIB to remove at least a portion of the second material from the etch surface and deposit a thin film on the film deposition surface of the first material. According to some embodiments, the deposition-etch gas may contain silicon (Si) and carbon (C), and it may possess a Si—C bond.

Abstract: Beam-defining apparatus and methods for defining a gas cluster ion beam used to process a workpiece. The beam-defining apparatus includes a second member projecting from a first member in a direction away from the workpiece and an aperture defined in the first and second members that is configured to transmit at least a portion of the gas cluster ion beam to the workpiece.

Abstract: A method for growing material on a substrate is described. The method comprises directionally growing a thin film on one or more surfaces of a substrate using a gas cluster ion beam (GCIB) formed from a source of precursor for the thin film, wherein the growth occurs on surfaces oriented substantially perpendicular to the direction of incidence of the GCIB, and growth is substantially avoided on surfaces oriented substantially parallel to the direction of incidence.

Abstract: A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environment. Additionally, the method comprises forming a gas cluster ion beam (GCIB) from a pressurized gas comprising a compound having silicon (Si) and carbon (C), accelerating the GCIB to the reduced-pressure environment, and irradiating the accelerated GCIB onto at least a portion of the surface of the substrate to form a thin film containing silicon and carbon, wherein the carbon content is greater than or equal to about 10%. Further the compound may possess a Si—C bond.

Abstract: Method of infusing or introducing material into a substrate using a gas cluster ion beam. The method includes maintaining a reduced-pressure environment around a substrate holder and holding a substrate securely within that reduced-pressure environment. A gas-cluster ion beam formed from a pressurized gas mixture including an inert gas and at least one other atomic or molecular specie is provided to the reduced-pressure environment and accelerated. In one embodiment, the method includes irradiating the accelerated gas-cluster ion beam onto one or more surface portions of the substrate to form an infused region or gas-cluster ion-impact region therein by introducing part or all of the atomic or molecular specie into the surface. In another embodiment, the method includes modifying at least one electrical property of the surface of the substrate by irradiating the accelerated gas-cluster ion beam onto one or more surface portions of the substrate.

Abstract: Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Abstract: Beam-defining apparatus and methods for defining a gas cluster ion beam used to process a workpiece. The beam-defining apparatus includes a second member projecting from a first member in a direction away from the workpiece and an aperture defined in the first and second members that is configured to transmit at least a portion of the gas cluster ion beam to the workpiece.

Abstract: Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduction of dopant atoms and/or C. Processes for forming semiconductor films infused into and/or deposited onto the surfaces of semiconductor and/or dielectric substrates are also described. Such films may be doped and/or strained as well.

Abstract: Apparatus and methods for improving processing of workpieces with gas-cluster ion beams and modifying the gas-cluster ion energy distribution in the GCIB. In a reduced-pressure environment, generating an energetic gas-cluster ion beam and subjecting the beam to increased pressure region.

Abstract: In a laser assisted semiconductor etching process, a krypton fluoride excimer laser operating at 248 nm excites a carbonyl dichloride COCl.sub.2 radical precursor gas which decomposes into carbon monoxide and also atomic chlorine that bonds to laser illuminated surface layer materials of semiconductor devices to create gaseous chlorides which desorb to perfect selective etching, the surface layer material being Cu, Al, amphorous silicon, Ga.sub.(x) Al.sub.(1-x) As, CuIn.sub.(x) Ga.sub.(1-x) Se.sub.2, CdZnS, ZnO and other materials useful in the manufacture of semiconductor devices and solar cells.