Abstract: The disclosure relates to an illumination system for EUV lithography, as well as related elements, systems and methods. In some embodiments, an illumination system includes a first optical element and a second optical element. The first optical element can include a plurality of first facet elements configured so that, when impinged by respective partial beams of radiation, the plurality of first facet elements produce secondary light sources. The second optical element can include a second optical element including a plurality of second facet elements. Each of the plurality of second facet elements can be assigned to at least one of the plurality of first facet elements. The plurality of second facet elements can be configured to be impinged by the radiation via the first optical element.

Abstract: A field facet mirror for an illumination optics of a projection exposure apparatus for EUV microlithography transmits a structure of an object arranged in an object field into an image field. The field facet mirror has a plurality of field facets with reflection surfaces. The arrangement of the field facets next to one another spans a base plane. Projections of the reflection surfaces of at least two of the field facets onto the base plane differ with respect to at least one of the following parameters: size, shape, orientation. A field facet mirror results which can ensure a uniform object field illumination with a simultaneously high EUV throughput.

Abstract: A field facet mirror for an illumination optics of a projection exposure apparatus for EUV microlithography transmits a structure of an object arranged in an object field into an image field. The field facet mirror has a plurality of field facets with reflection surfaces. The arrangement of the field facets next to one another spans a base plane. Projections of the reflection surfaces of at least two of the field facets onto the base plane differ with respect to at least one of the following parameters: size, shape, orientation. A field facet mirror results which can ensure a uniform object field illumination with a simultaneously high EUV throughput.

Abstract: A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (dOIS) can be smaller than 12. The image plane is the first field plane of the projection objective downstream of the object plane. The projection objective can have a plurality of mirrors, wherein the ratio between an overall length (T) and an object image shift (dOIS) is smaller than 2.

Abstract: An illumination optical unit for an EUV projection exposure apparatus has a diaphragm comprising a radiation-transmissive region having a discrete symmetry group. The form of the diaphragm is adapted to the form of the facets of a pupil facet mirror or to the form of the radiation source. The diaphragm is preferably arranged in the region of an intermediate focal plane.

Abstract: A deflection mirror (1, 501, etc.) for a microlithography projection exposure apparatus for illuminating an object field in an object plane of the projection exposure apparatus (1067) using the deflection mirror with grazing incidence. This deflection mirror has a substrate (3, 503, etc.) and at least one layer system (5, 505, etc.), and during operation light impinges on said mirror at a multiplicity of angles of incidence, wherein the layer system is designed such that, for light having a wavelength of less than 30 nm, for an angle of incidence of between 55° and 70°, the variation of the reflectivity is less than 20%, in particular less than 12%.

Abstract: A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (dOIS) can be smaller than 12. The image plane is the first field plane of the projection objective downstream of the object plane. The projection objective can have a plurality of mirrors, wherein the ratio between an overall length (T) and an object image shift (dOIS) is smaller than 2.

Abstract: Illumination optics for EUV microlithography guide an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1.

Abstract: An illumination optical system for projection lithography has an optical assembly for guiding illumination light to an object field to be illuminated in an object plane. The illumination optical system divides a bundle of the illumination light into a plurality of part bundles, which are allocated to various illumination directions of the object field illumination. The illumination optical system is configured in such a way that at least some of the part bundles are superimposed on one another in a first superimposition plane according to a first superimposition specification and in a second superimposition plane, which is spaced apart from the first superimposition plane, according to a second superimposition specification. The result is an illumination optical system, in which an influencing and/or a monitoring of an illumination intensity distribution over the object field is made possible, as far as possible without influencing an illumination angle distribution.

Abstract: A method for producing a multilayer coating (17) for reflecting radiation in the soft X-ray or EUV wavelength range on an optical element (8, 9) operated at an operating temperature (TOP) of 30° C. or more, including: determining an optical design for the multilayer coating (17) which defines an optical desired layer thickness (nOP dOP) of the layers (17.1, 17.2) of the multilayer coating (17) at the operating temperature (TOP), and applying the layers (17.1, 17.2) of the multilayer coating (17) with an optical actual layer thickness (nB dB) chosen such that a layer thickness change(nOP dOP?nB dB) caused by thermal expansion of the layers (17.1, 17.2) between the coating temperature (TB) and the operating temperature (TOP) is compensated for. Also provided are an associated optical element (8, 9) and a projection exposure apparatus having at least one such optical element (8, 9).

Abstract: An illumination optical unit for EUV microlithography includes a first optical element having a plurality of first reflective facet elements and a second optical element having a plurality of second reflective facet elements. Each first reflective facet element from the plurality of the first reflective facet elements has a respective maximum number of different positions which defines a set—associated with the first facet element—consisting of second reflective facet elements in that the set consists of all second facet elements onto which the first facet element directs radiation in its different positions during the operation of the illumination optical unit. The plurality of second reflective facet element forms a plurality of disjoint groups, wherein each of the groups and each of the sets contain at least two second facet elements, and there are no two second facet elements of a set which belong to the same group.

Abstract: In general, in one aspect, the invention features a system that includes an illumination system of a microlithography tool, the illumination system including a first component having a plurality of elements. During operation of the system, the elements direct radiation from a source along an optical path to an arc-shaped object field at an object plane of a projection objective, and at least one of the elements has a curved shape that is different from the arc-shape of the object field.

Abstract: An optical element for use in an illumination optical unit of an EUV microlithography projection exposure apparatus includes a plurality of reflective facet elements. Each reflective facet element has at least one reflective surface. In this case, at least one facet element is arranged in a manner rotatable about a rotation axis. The rotation axis intersects the at least one reflective surface of the facet element. With such an optical element, it is possible to alter the direction and/or the intensity of at least part of the illumination radiation within the illumination optical unit in a simple manner.

Abstract: An imaging optics is provided for lithographic projection exposure for guiding a bundle of imaging light with a wavelength shorter than 193 nm via a plurality of mirrors for beam-splitter-free imaging of a reflective object in an object field in an object plane into an image field in an image plane. An object field point has a central ray angle which is smaller than 3°. At least one of the mirrors is a near-field mirror. The imaging optics which can allow for high-quality imaging of a reflective object.

Abstract: In general, in one aspect, the invention features a system that includes an illumination system of a microlithography tool, the illumination system including a first component having a plurality of elements. During operation of the system, the elements direct radiation from a source along an optical path to an arc-shaped object field at an object plane of a projection objective, and at least one of the elements has a curved shape that is different from the arc-shape of the object field.

Abstract: An illumination system is used to illuminate a specified illumination field of an object surface with EUV radiation. The illumination system has an EUV source and a collector to concentrate the EUV radiation in the direction of an optical axis. A first optical element is provided to generate secondary light sources, and a second optical element is provided at the location of these secondary light sources, the second optical element being part of an optical device which includes further optical elements, and which images the first optical element into an image plane into the illumination field. Between the collector and the illumination field, a maximum of five reflecting optical elements are arranged. These optical elements reflect the main beam either grazingly or steeply. The optical axis, projected onto an illumination main plane, is deflected by more than 30° between a source axis portion and a field axis portion.

Abstract: An imaging optical system has a plurality of mirrors, which image an object field in an object plane into an image field in an image plane. A reflection face of at least one of the mirrors is configured as a free form face which cannot be described by a rotationally symmetrical function. The object field has an aspect ratio greater than 1. A ratio of a minimal and a maximal transverse dimension of the object field can be less than 0.9.

Abstract: The disclosure provides an illumination optical system for microlithography that is designed so that, even with a change of illumination setting (e.g., a change in the given illumination conditions in the object field), variation of illumination parameters over the object field is confined within predetermined tolerances.

Abstract: An imaging optical system for microlithography is used to illuminate an object field (12). The illumination optical system has a first transmission optical system for guiding illumination light (3), proceeding from a light source. An illumination presetting facet mirror (7) with a plurality of illumination presetting facets (25) is arranged downstream of the first transmission optical system. The illumination presetting facet mirror (7) produces a preset illumination of the object field (12) by means of an edge shape, which can be illuminated, of the illumination presetting facet mirror (7) and individual tilting angles of the illumination presetting facets (25). An arrangement of the first transmission optical system and the illumination presetting facet mirror (7) is such that the telecentric illumination of the object field (12) results.

Abstract: An illumination optics for EUV microlithography illuminates an object field with the aid of an EUV used radiation beam. Preset devices preset illumination parameters. An illumination correction device corrects the intensity distribution and/or the angular distribution of the object field illumination. The latter has an optical component to which the used radiation beam is at least partially applied upstream of the object field and which can be driven in a controlled manner. A detector acquires one of the illumination parameters. An evaluation device evaluates the detector data and converts the latter into control signals. At least one actuator displaces the optical component. During exposures, the actuators are controlled with the aid of the detector signals during the period of a projection exposure. A maximum displacement of below 8 ?m is ensured for edges of the object field towards an object to be exposed.