Abstract: An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

Abstract: A patterning method that includes providing an amorphous semiconductor surface to be patterned, and terminating the amorphous semiconductor surface by forming silicon-hydrogen (Si—H) on the surface to be patterned. A photoresist is formed on the surface to be patterned. The photoresist is then lithographically patterned using an extreme ultra violet (EUV) method. A photoresist is then developed on the surface to be patterned using negative tone development (NTD).

Abstract: A polymer brush with a plurality of repeat units wherein some portions of the repeat units have one or more grafting groups and some portions have one or more interface tuning groups is disclosed. The grafting groups are selected based on the identity of an inorganic substrate, and the interface tuning groups are selected based on the identity of a photoresist that will interact with the groups. A process of lithographic patterning and an electronic device comprising at least one integrated circuit formed by the process of lithographic patterning are disclosed as well. The process comprises providing an inorganic substrate, depositing the disclosed polymer brush onto the inorganic substrate, and depositing a photoresist onto the polymer brush. The process further comprises masking the photoresist with a photomask having a pattern, and applying energy to the masked photoresist to form an etch mask. The inorganic substrate is then etched.

Abstract: An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

Abstract: An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

Abstract: A polymer brush with a plurality of repeat units wherein some portions of the repeat units have one or more grafting groups and some portions have one or more interface tuning groups is disclosed. The grafting groups are selected based on the identity of an inorganic substrate, and the interface tuning groups are selected based on the identity of a photoresist that will interact with the groups. A process of lithographic patterning and an electronic device comprising at least one integrated circuit formed by the process of lithographic patterning are disclosed as well. The process comprises providing an inorganic substrate, depositing the disclosed polymer brush onto the inorganic substrate, and depositing a photoresist onto the polymer brush. The process further comprises masking the photoresist with a photomask having a pattern, and applying energy to the masked photoresist to form an etch mask. The inorganic substrate is then etched.

Abstract: A patterning method that includes providing an amorphous semiconductor surface to be patterned, and terminating the amorphous semiconductor surface by forming silicon-hydrogen (Si—H) on the surface to be patterned. A photoresist is formed on the surface to be patterned. The photoresist is then lithographically patterned using an extreme ultra violet (EUV) method. A photoresist is then developed on the surface to be patterned using negative tone development (NTD).

Abstract: A polymer brush with a plurality of repeat units wherein some portions of the repeat units have one or more grafting groups and some portions have one or more interface tuning groups is disclosed. The grafting groups are selected based on the identity of an inorganic substrate, and the interface tuning groups are selected based on the identity of a photoresist that will interact with the groups. A process of lithographic patterning and an electronic device comprising at least one integrated circuit formed by the process of lithographic patterning are disclosed as well. The process comprises providing an inorganic substrate, depositing the disclosed polymer brush onto the inorganic substrate, and depositing a photoresist onto the polymer brush. The process further comprises masking the photoresist with a photomask having a pattern, and applying energy to the masked photoresist to form an etch mask. The inorganic substrate is then etched.

Abstract: An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

Abstract: A polymer brush with a plurality of repeat units wherein some portions of the repeat units have one or more grafting groups and some portions have one or more interface tuning groups is disclosed. The grafting groups are selected based on the identity of an inorganic substrate, and the interface tuning groups are selected based on the identity of a photoresist that will interact with the groups. A process of lithographic patterning and an electronic device comprising at least one integrated circuit formed by the process of lithographic patterning are disclosed as well. The process comprises providing an inorganic substrate, depositing the disclosed polymer brush onto the inorganic substrate, and depositing a photoresist onto the polymer brush. The process further comprises masking the photoresist with a photomask having a pattern, and applying energy to the masked photoresist to form an etch mask. The inorganic substrate is then etched.

Abstract: Embodiments are directed to a method and resulting structures for improving the adhesion of a polymer to the surface of a substrate. A substrate is formed and a surface of the substrate is modified to include X—H functional group terminations. A polymer is formed on the modified surface of the substrate. The polymer and substrate are heated to chemically bond the polymer to the surface of the substrate.

Abstract: An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

Abstract: An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

Abstract: Embodiments are directed to a method and resulting structures for improving the adhesion of a polymer to the surface of a substrate. A substrate is formed and a surface of the substrate is modified to include X—H functional group terminations. A polymer is formed on the modified surface of the substrate. The polymer and substrate are heated to chemically bond the polymer to the surface of the substrate.

Abstract: A patterning method that includes providing an amorphous semiconductor surface to be patterned, and terminating the amorphous semiconductor surface by forming silicon-hydrogen (Si—H) on the surface to be patterned. A photoresist is formed on the surface to be patterned. The photoresist is then lithographically patterned using an extreme ultra violet (EUV) method. A photoresist is then developed on the surface to be patterned using negative tone development (NTD).

Abstract: An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

Abstract: An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

Abstract: A patterning method that includes providing an amorphous semiconductor surface to be patterned, and terminating the amorphous semiconductor surface by forming silicon-hydrogen (Si—H) on the surface to be patterned. A photoresist is formed on the surface to be patterned. The photoresist is then lithographically patterned using an extreme ultra violet (EUV) method. A photoresist is then developed on the surface to be patterned using negative tone development (NTD).

Abstract: A layered structure includes a substrate; an underlayer including a reversibly crosslinked polymer and/or oligomer interconnected by ester functionalities; a silicon-containing mask overlaying the underlayer; and a photoresist overlaying the silicon-containing hardmask layer. Also described are multilayer lithographic processes and processes of forming the underlayer, which generally includes coating an underlayer composition onto a surface of the substrate at a thickness effective to provide a planar upper surface, wherein the underlayer composition includes a polymer including terminal alcohol groups, a multifunctional anhydride, and a solvent. The underlayer composition is heated to a temperature to effect a crosslinking reaction between the multifunctional anhydride and the terminal alcohol groups to form the ester functionalities, which can be selectively removed (reversibly crosslinked) using a wet etchant.

Abstract: The present invention provides a patterning process, which comprises step of forming a BPSG film on the under layer film by using a composition for forming a coating type BPSG film including a base polymer and an organic compound with a content of 25 parts by mass or more of the organic compound with respect to 100 parts by mass of the base polymer, the base polymer having a silicon containing unit, a boron containing unit and a phosphorus containing unit with a total content of the boron containing unit and the phosphorus containing unit being 10 mol % or more, the organic compound having two or more hydroxyl groups or carboxyl groups per one molecule.