Patents by Inventor Martin Glodde
Martin Glodde has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9551696Abstract: A method of testing the cleanability of polymerized sublimate outgassed from a lithography material during a thermal heating process including; placing a wafer on a wafer hotplate inside a chamber with the wafer being covered by a lithography material; placing a target, having a starting composition, above the wafer in the chamber; heating the wafer using the wafer hotplate in an attempt to outgas a sublimate, where the sublimate condenses on the target; forming a polymerized sublimate on the target; and applying organic solvents to the target to determine the cleanability of the polymerized sublimate.Type: GrantFiled: June 23, 2014Date of Patent: January 24, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Mark S. Chace, Martin Glodde, Margaret C. Lawson, Janine L. Protzman, Qin Yuan
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Patent number: 9465290Abstract: A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.Type: GrantFiled: April 2, 2014Date of Patent: October 11, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Wu-Song Huang, Martin Glodde, Dario L. Goldfarb, Wai-Kin Li, Sen Liu, Libor Vyklicky
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Patent number: 9460934Abstract: An silicon-containing antireflective coating (SiARC) material is applied on a substrate. The SiARC material which includes a base polymer and may include a boron silicate polymer including silsesquioxane. An etch sequence is utilized, which includes a first wet etch employing a basic solution, a second wet etch employing an acidic solution, and a third wet etch employing another basic solution. The first wet etch can be employed to break up the boron silicate polymer, and the second wet etch can remove the base polymer material, and the third wet etch can remove the residual boron silicate polymer and other residual materials. The SiARC material can be removed from a substrate employing the etch sequence, and the substrate can be reused for monitoring purposes.Type: GrantFiled: March 15, 2013Date of Patent: October 4, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Martin Glodde, Wu-Song Huang, Javier J. Perez, Takeshi Kinsho, Tsutomu Ogihara, Seiichiro Tachibana, Takeru Watanabe
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Publication number: 20160276152Abstract: The present invention provides a patterning process, which comprises step of forming a BPSG film on the under layer film by using a composition for forming a coating type BPSG film including a base polymer and an organic compound with a content of 25 parts by mass or more of the organic compound with respect to 100 parts by mass of the base polymer, the base polymer having a silicon containing unit, a boron containing unit and a phosphorus containing unit with a total content of the boron containing unit and the phosphorus containing unit being 10 mol % or more, the organic compound having two or more hydroxyl groups or carboxyl groups per one molecule.Type: ApplicationFiled: March 20, 2015Publication date: September 22, 2016Inventors: Seiichiro TACHIBANA, Yoshinori TANEDA, Rie KIKUCHI, Tsutomu OGIHARA, Yoshio KAWAI, Karen PETRILLO, Martin GLODDE
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Patent number: 9431250Abstract: Various methods include: forming an opening in a resist layer to expose a portion of an underlying blocking layer; performing an etch on the exposed portion of the blocking layer to expose a portion of an etch stop layer, wherein the etch stop layer resists etching during the etch of the exposed portion of the blocking layer; etching the exposed portion of the etch stop layer to expose a portion of a substrate below the exposed portion of the etch stop layer and leave a remaining portion of the etch stop layer; and ion implanting the exposed portion of the substrate, wherein the blocking layer prevents ion implanting of the substrate outside of the exposed portion.Type: GrantFiled: March 6, 2014Date of Patent: August 30, 2016Assignee: International Business Machines CorporationInventors: Martin Glodde, Steven J. Holmes, Daiji Kawamura
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Patent number: 9425053Abstract: A trilayer stack that can be used as a block mask for forming patterning features in semiconductor structures with high aspect ratio topography is provided. The trilayer stack includes an organic planarization (OPL) layer, a titanium-containing antireflective coating (TiARC) layer on the OPL layer and a photoresist layer on the TiARC layer. Employing a combination of an OPL having a high etch rate and a TiARC layer that can be easily removed by a mild chemical etchant solution in the trilayer stack can significantly minimize substrate damage during lithographic patterning processes.Type: GrantFiled: June 27, 2014Date of Patent: August 23, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Martin Glodde, Steven J. Holmes, Daiji Kawamura
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Patent number: 9348228Abstract: A silicon-containing antireflective coating formulation comprising: (i) an aqueous base insoluble organosilicon component having a multiplicity of hydrocarbon groups derivatized with hydroxy groups in the absence of Si—O—C and Si—O—H moieties; (ii) a vinylether component having a multiplicity of vinylether groups; and (iii) a casting solvent. Also disclosed is a method for converting the silicon-containing antireflective coating formulation into a crosslinked silicon-containing antireflective film comprising organosilicon units interconnected by acetal or ketal groups. The method entails (a) coating a substrate with the silicon-containing antireflective coating formulation and (b) heating the coated substrate to a temperature at which crosslinking between the organosilicon silicon component and vinylether component occurs.Type: GrantFiled: January 3, 2013Date of Patent: May 24, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Martin Glodde, Wu-Song Huang, Ratnam Sooriyakumaran
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Patent number: 9337033Abstract: A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on titanium-silicon (TiSi) polymer or oligomer as a tone inversion material is provided. The spin-on TiSi material is spin-coated over a patterned OPL that includes a first pattern generated from a DSA based process. The spin-on TiSi material fill trenches within the patterned OPL to form a tone inverted pattern by removing the patterned OPL selective to the spin-on TiSi material. The inverted pattern is a complementary pattern to the first pattern, and is transferred into the underlying hard mask material by an anisotropic etch.Type: GrantFiled: November 19, 2015Date of Patent: May 10, 2016Assignee: International Business Machines CorporationInventors: Martin Glodde, Wu-Song Huang, Hiroyuki Miyazoe, Ratnam Sooriyakumaran, Hsinyu Tsai
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Publication number: 20160126097Abstract: A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on titanium-silicon (TiSi) polymer or oligomer as a tone inversion material is provided. The spin-on TiSi material is spin-coated over a patterned OPL that includes a first pattern generated from a DSA based process. The spin-on TiSi material fill trenches within the patterned OPL to form a tone inverted pattern by removing the patterned OPL selective to the spin-on TiSi material. The inverted pattern is a complementary pattern to the first pattern, and is transferred into the underlying hard mask material by an anisotropic etch.Type: ApplicationFiled: November 19, 2015Publication date: May 5, 2016Inventors: Martin Glodde, Wu-Song Huang, Hiroyuki Miyazoe, Ratnam Sooriyakumaran, Hsinyu Tsai
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Patent number: 9281212Abstract: A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on titanium-silicon (TiSi) polymer or oligomer as a tone inversion material is provided. The spin-on TiSi material is spin-coated over a patterned OPL that includes a first pattern generated from a DSA based process. The spin-on TiSi material fill trenches within the patterned OPL to form a tone inverted pattern by removing the patterned OPL selective to the spin-on TiSi material. The inverted pattern is a complementary pattern to the first pattern, and is transferred into the underlying hard mask material by an anisotropic etch.Type: GrantFiled: October 17, 2014Date of Patent: March 8, 2016Assignee: International Business Machines CorporationInventors: Martin Glodde, Wu-Song Huang, Hiroyuki Miyazoe, Ratnam Sooriyakumaran, Hsinyu Tsai
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Publication number: 20150380251Abstract: A trilayer stack that can be used as a block mask for forming patterning features in semiconductor structures with high aspect ratio topography is provided. The trilayer stack includes an organic planarization (OPL) layer, a titanium-containing antireflective coating (TiARC) layer on the OPL layer and a photoresist layer on the TiARC layer. Employing a combination of an OPL having a high etch rate and a TiARC layer that can be easily removed by a mild chemical etchant solution in the trilayer stack can significantly minimize substrate damage during lithographic patterning processes.Type: ApplicationFiled: June 27, 2014Publication date: December 31, 2015Applicant: International Business Machines CorporationInventors: Martin Glodde, Steven J. Holmes, Daiji Kawamura
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Publication number: 20150369789Abstract: A method of testing the cleanability of polymerized sublimate outgassed from a lithography material during a thermal heating process including; placing a wafer on a wafer hotplate inside a chamber with the wafer being covered by a lithography material; placing a target, having a starting composition, above the wafer in the chamber; heating the wafer using the wafer hotplate in an attempt to outgas a sublimate, where the sublimate condenses on the target; forming a polymerized sublimate on the target; and applying organic solvents to the target to determine the cleanability of the polymerized sublimate.Type: ApplicationFiled: June 23, 2014Publication date: December 24, 2015Inventors: Mark S. Chace, Martin Glodde, Margaret C. Lawson, Janine L. Protzman, Qin Yuan
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Publication number: 20150255286Abstract: Various methods include: forming an opening in a resist layer to expose a portion of an underlying blocking layer; performing an etch on the exposed portion of the blocking layer to expose a portion of an etch stop layer, wherein the etch stop layer resists etching during the etch of the exposed portion of the blocking layer; etching the exposed portion of the etch stop layer to expose a portion of a substrate below the exposed portion of the etch stop layer and leave a remaining portion of the etch stop layer; and ion implanting the exposed portion of the substrate, wherein the blocking layer prevents ion implanting of the substrate outside of the exposed portion.Type: ApplicationFiled: March 6, 2014Publication date: September 10, 2015Applicant: International Business Machines CorporationInventors: Martin Glodde, Steven J. Holmes, Daiji Kawamura
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Patent number: 9069245Abstract: A composition comprising (A) a near-infrared absorbing dye of formula (1), (B) a polymer, and (C) a solvent is used to form a near-infrared absorptive layer. In formula (1), R1 and R2 are a monovalent hydrocarbon group which may contain a heteroatom, k is 0 to 5, m is 0 or 1, n is 1 or 2, Z is oxygen, sulfur or C(R?)(R?), R? and R? are hydrogen or a monovalent hydrocarbon group which may contain a heteroatom, and X? is an anion.Type: GrantFiled: April 21, 2011Date of Patent: June 30, 2015Assignees: SHIN-ETSU CHEMICAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Masaki Ohashi, Seiichiro Tachibana, Kazumi Noda, Shozo Shirai, Takeshi Kinsho, Wu-Song Huang, Dario L. Goldfarb, Wai-Kin Li, Martin Glodde
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Patent number: 8999625Abstract: Embodiments include a silicon-containing antireflective material including a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiOx background, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes having acid labile side groups linked to hydrophilic groups Exemplary acid labile side groups may include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals, Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides.Type: GrantFiled: February 14, 2013Date of Patent: April 7, 2015Assignee: International Business Machines CorporationInventors: Martin Glodde, Wu-Song Huang, Javier Perez, Ratnam Sooriyakumaran, Takeshi Kinsho, Tsutomu Ogihara, Seiichiro Tachibana, Takafumi Ueda
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Publication number: 20140273501Abstract: An silicon-containing antireflective coating (SiARC) material is applied on a substrate. The SiARC material which includes a base polymer and may include a boron silicate polymer including silsesquioxane. An etch sequence is utilized, which includes a first wet etch employing a basic solution, a second wet etch employing an acidic solution, and a third wet etch employing another basic solution. The first wet etch can be employed to break up the boron silicate polymer, and the second wet etch can remove the base polymer material, and the third wet etch can remove the residual boron silicate polymer and other residual materials. The SiARC material can be removed from a substrate employing the etch sequence, and the substrate can be reused for monitoring purposes.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Applicants: SHIN-ETSU Chemical Company, Ltd., International Business Machines CorporationInventors: Martin Glodde, Wu-Song Huang, Javier J. Perez, Takeshi Kinsho, Tsutomu Ogihara, Seiichiro Tachibana, Takeru Watanabe
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Patent number: 8816328Abstract: A method to fabricate a carbon nanotube (CNT)-based transistor includes providing a substrate having a CNT disposed over a surface; forming a protective electrically insulating layer over the CNT and forming a first multi-layer resist stack (MLRS) over the protective electrically insulating layer. The first MLRS includes a bottom layer, an intermediate layer and a top layer of resist. The method further includes patterning and selectively removing a portion of the first MLRS to define an opening for a gate stack while leaving the bottom layer; selectively removing a portion of the protective electrically insulating layer within the opening to expose a first portion of the CNT; forming the gate stack within the opening and upon the exposed first portion of the carbon nanotube, followed by formation of source and drain contacts also in accordance with the inventive method so as to expose second and third portions of the CNT.Type: GrantFiled: September 14, 2012Date of Patent: August 26, 2014Assignee: International Business Machines CorporationInventors: Josephine B Chang, Martin Glodde, Michael A. Guillorn
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Publication number: 20140227641Abstract: Embodiments include a silicon-containing antireflective material including a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiOx background, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes having acid labile side groups linked to hydrophilic groups Exemplary acid labile side groups may include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals, Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides.Type: ApplicationFiled: February 14, 2013Publication date: August 14, 2014Applicants: SHIN-ETSU CHEMICAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Martin Glodde, Wu-Song Huang, Javier Perez, Ratnam Sooriyakumaran, Takeshi Kinsho, Tsutomu Ogihara, Seiichiro Tachibana, Takafumi Ueda
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Patent number: 8803129Abstract: A structure includes a substrate having a carbon nanotube (CNT) disposed over a surface. The CNT is partially disposed within a protective electrically insulating layer. The structure further includes a gate stack disposed over the substrate. A first portion of a length of the CNT not covered by the protective electrically insulating layer passes through the gate stack. Source and drain contacts are disposed adjacent to the gate stack, where second and third portions of the length of CNT not covered by the protective electrically insulating layer are conductively electrically coupled to the source and drain contacts. The gate stack and the source and drain contacts are contained within the protective electrically insulating layer and within an electrically insulating organic planarization layer that is disposed over the protective electrically insulating layer. A method to fabricate a CNT-based transistor is also described.Type: GrantFiled: October 11, 2011Date of Patent: August 12, 2014Assignee: International Business Machines CorporationInventors: Josephine B Chang, Martin Glodde, Michael A. Guillorn
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Publication number: 20140210034Abstract: A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.Type: ApplicationFiled: April 2, 2014Publication date: July 31, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Wu-Song Huang, Martin Glodde, Dario L. Goldfarb, Wai-Kin Li, Sen Liu, Libor Vyklicky