Abstract: The present invention relates to the use of hypoxia-inducible factor (HIF) inhibitors in cancer immunotherapy. Specifically, the disclosure provides methods of treating a cancer in a subject in need of cancer immunotherapy, comprising administering a HIF-1a inhibitor to the subject and a second cancer immunotherapeutic agent to the subject, wherein the HIF-1a inhibitor comprising echinomycin, and wherein the second cancer immunotherapeutic agent comprising an anti-CTLA-4 antibody including Ipilimumab or Tremelimumab.

Abstract: Provided herein are anti-CCR8 antibodies or antigen binding fragment thereof, which bind to CCR8, wherein the CCR8 is a human CCR8 and the antibody does not bind human CCR4. The anti-CCR8 antibodies or antigen binding fragment of the disclosure are useful for the treatment of cancer diseases through the elimination of regulatory T cells. Also provided herein are methods of use for the anti-CCR8 antibodies or antigen binding fragment thereof.

Abstract: Provided is a method including obtaining a set of ontologies mapping n-grams onto concepts to which the n-grams refer in different respective domains of knowledge. The method includes receiving an update associating a first n-gram with a first concept and receiving information by which the update is associated with a given domain of knowledge. The method includes selecting a subset of ontologies by determining that the update in the given domain of knowledge is applicable to respective domains of knowledge of the subset of ontologies and that the first concept has a specified type of relationship to a subset of concepts to which other n-grams are mapped in the subset of ontologies. The method also includes storing, in response to the determination, associations between the first n-gram and the subset of concepts in at least some of the subset of ontologies in memory of the computer system.

Abstract: Provided herein are anti-EGFRvII antibodies and binding fragments thereof. The anti-EGFRvIII antibodies of the disclosure are useful for the treatment of cancers through, e.g., antibody-dependent cell cytotoxicity (ADCC). Also provided herein are methods of making and using the anti-EGFRvIII antibodies for the treatment of cancer, and polynucleotides that encode the same.

Abstract: The present disclosure provides a battery pack including a housing, wherein the housing has a bottom portion and side walls extending upward around a periphery of the bottom portion; an upper portion opening is formed at top ends of the side walls extending upward; an upper cover is mounted on the upper portion opening of the housing; and the battery pack comprises: multiple flat battery cells; and a first end plate and a second end plate, wherein when the multiple battery cells are sequentially arranged and mounted into the housing from the upper portion opening, the first end plate and the second end plate are located at two end sides of the sequentially arranged multiple battery cells to laterally fix the sequentially arranged multiple battery cells. The two end plates may absorb deformation of the battery cell while expanding.

Abstract: Systems and methods of monitoring technology infrastructure using alerts indicative service events and tickets indicative of incidents reported to the support system, including transmitting, to a client via a network, structured support data including issue data and correlation data. The issue data represents issues, which are fewer than the number of tickets, generated by processing textual data of the tickets through a clustering engine implementing a generative probabilistic model and generating the correlation data by associating alerts and tickets by correlating alert-specific identifiers and ticket-specific identifiers. The identifiers are of least one of identifier times, locations, names, or descriptions. A prioritization engine is also disclosed.

Abstract: A method (of writing to a ferroelectric field-effect transistor (FeFET) configured as a 2-bit storage device that stores two bits, wherein the FeFET includes a first source/drain (S/D) terminal, a second S/D terminal, a gate terminal and a ferroelectric layer, a second bit being at a first end of the ferroelectric layer, the first end being proximal to the first S/D terminal) includes: setting the second bit to a logical 1 value, the setting a second bit including applying a gate voltage to the gate terminal, and applying a first source/drain voltage to the second S/D terminal; and wherein the first source/drain voltage is lower than the gate voltage.

Abstract: A system comprises a IoT resource and a computing device of a user. The computing device comprises a processor that executes a personal privacy app that receives data about the IoT resource and communicates a preference setting for the user with respect to the IoT device. The preference setting is based on the data received about the IoT resource.

Abstract: An electronic user device includes inclusion list storage with electronically readable memory, for storing an inclusion list and the inclusion list indicating included logical IDs. The device also has a security module app that receives a cellular broadcast message and extracts logical IDs therefrom. This processes a targeted cellular broadcast message embedded in the payload of the cellular broadcast message, based on whether a logical ID, also embedded in the payload, of the targeted cellular broadcast message is on the inclusion list. It then formats it for consumption by an electronic user device app that receives data via a data channel when available.

Abstract: The present invention relates to RNAi agents, e.g., double stranded RNAi agents, targeting the Kallikrein B, Plasma (Fletcher Factor) 1 (KLKB1) gene, the Factor XII (Hageman Factor (F12) gene, or the Kininogen 1 (KNG1) gene, and methods of using such RNAi agents to inhibit expression of a KLKB1 gene, an F12 gene, and/or a KNG1 gene, and methods of treating subjects having an hereditary angioedema (HAE) and/or a contact activation pathway-associated disorder.

Abstract: The present invention relates to the use of a CD24 protein for preventing or treating relapse of a cancer in a subject. The present invention also relates to the use of a CD24 protein for reducing cancer stem cell activity.

Abstract: A FeFET configured as a 2-bit storage device that includes a gate stack including a ferroelectric layer over a semiconductor substrate; and the ferroelectric layer includes dipoles; and a first set of dipoles at the first end of the ferroelectric layer has a first polarization; and a second set of dipoles at the second end of the ferroelectric layer has a second polarization, the first and second polarizations of the corresponding first and second sets of dipoles representing storage of 2 bits, wherein a first bit of the 2-bit storage device being configured to be read by application of a read voltage to the source region and a do-not-disturb voltage to the drain region; and a second bit of the 2-bit storage device being configured to be read by application of the do-not-disturb voltage to the source region and the read voltage to the drain region.

Abstract: A method (of reading a ferroelectric field-effect transistor (FeFET) configured as a 2-bit storage device that stores two bits, wherein the FeFET includes a first source/drain (S/D) terminal, a second S/D terminal, a gate terminal and a ferroelectric layer, a second bit being at a first end of the ferroelectric layer, the first end being proximal to the first S/D terminal) includes reading the second bit including: applying a gate sub-threshold voltage to the gate terminal; applying a read voltage to the second S/D terminal; applying a do-not-disturb voltage to the first S/D terminal; and sensing a first current at the second S/D terminal; and wherein the read voltage is lower than the do-not-disturb voltage.

Abstract: A FeFET configured as a 2-bit storage device that includes a gate stack including a ferroelectric layer over a semiconductor substrate; and the ferroelectric layer includes dipoles; and a first set of dipoles at the first end of the ferroelectric layer has a first polarization; and a second set of dipoles at the second end of the ferroelectric layer has a second polarization, the first and second polarizations of the corresponding first and second sets of dipoles representing storage of 2 bits, wherein a first bit of the 2-bit storage device being configured to be read by application of a read voltage to the source region and a do-not-disturb voltage to the drain region; and a second bit of the 2-bit storage device being configured to be read by application of the do-not-disturb voltage to the source region and the read voltage to the drain region.

Abstract: A ferroelectric field-effect transistor (FeFET) configured as a multi-bit storage device, the FeFET including: a semiconductor substrate that has a source region in the semiconductor substrate, and a drain region in the semiconductor substrate; a gate stack over the semiconductor substrate, with the source region and the drain region extending to opposite sides of the gate stack, the gate stack including a ferroelectric layer over the semiconductor substrate, and a gate region over the ferroelectric layer. The transistor also includes first and second ends of the ferroelectric layer which are proximal correspondingly to the source and drain regions. The ferroelectric layer includes dipoles. A first set of dipoles at the first end of the ferroelectric layer has a first polarization. A second set of dipoles at the second end of the ferroelectric layer has a second polarization, the second polarization being substantially opposite of the first polarization.

Abstract: A method (of reading a ferroelectric field-effect transistor (FeFET) configured as a 2-bit storage device that stores two bits, wherein the FeFET includes a first source/drain (S/D) terminal, a second S/D terminal, a gate terminal and a ferroelectric layer, a second bit being at a first end of the ferroelectric layer, the first end being proximal to the first S/D terminal) includes reading the second bit including: applying a gate sub-threshold voltage to the gate terminal; applying a read voltage to the second S/D terminal; applying a do-not-disturb voltage to the first S/D terminal; and sensing a first current at the second S/D terminal; and wherein the read voltage is lower than the do-not-disturb voltage.

Abstract: A ferroelectric field-effect transistor (FeFET) configured as a multi-bit storage device, the FeFET including: a semiconductor substrate that has a source region in the semiconductor substrate, and a drain region in the semiconductor substrate; a gate stack over the semiconductor substrate, with the source region and the drain region extending to opposite sides of the gate stack, the gate stack including a ferroelectric layer over the semiconductor substrate, and a gate region over the ferroelectric layer. The transistor also includes first and second ends of the ferroelectric layer which are proximal correspondingly to the source and drain regions. The ferroelectric layer includes dipoles. A first set of dipoles at the first end of the ferroelectric layer has a first polarization. A second set of dipoles at the second end of the ferroelectric layer has a second polarization, the second polarization being substantially opposite of the first polarization.

Abstract: Disclosed is a rotary suction cup, comprising a knob, a base, and a rubber bottom arranged from top to bottom, wherein the knob is connected with the rubber bottom, and the base is provided with a connecting portion for connecting a hanging object, and a through hole; the rotary suction cup further comprising: a pivot seat, arranged in the middle of the rubber bottom, and connected with the knob; a pivot tube, arranged in the knob, and sleeved on and moveably connected to the pivot seat; wherein, the pivot seat is axially moved along with the rotation of the pivot tube, the rubber bottom is concavely deformed on a surface thereof by the pivot seat, and the pivot tube or the knob is rotationally connected to the base in a stepped manner of at least two steps.

Abstract: Disclosed is a rotary suction cup, comprising a knob, a base, and a rubber bottom arranged from top to bottom, wherein the knob is connected with the rubber bottom, and the base is provided with a connecting portion for connecting a hanging object, and a through hole; the rotary suction cup further comprising: a pivot seat, arranged in the middle of the rubber bottom, and connected with the knob; a pivot tube, arranged in the knob, and sleeved on and moveably connected to the pivot seat; wherein, the pivot seat is axially moved along with the rotation of the pivot tube, the rubber bottom is concavely deformed on a surface thereof by the pivot seat, and the pivot tube or the knob is rotationally connected to the base in a stepped manner of at least two steps.