Patents by Inventor Martin Michael Frank

Martin Michael Frank has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ENGINEERING MULTIPLE THRESHOLD VOLTAGES IN AN INTEGRATED CIRCUIT
    Publication number: 20120086059
    Abstract: An integrated circuit and method for forming an integrated circuit. There are at least three field-effect transistors with at least two of the field-effect transistors having the same electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. It is optional for the third field-effect transistor to have an electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. The at least three field-effect transistors are strained to varying amounts so that each of the three field-effect transistors has a threshold voltage, Vt, which is different from the Vt of the two other field-effect transistors.
    Type: Application
    Filed: October 7, 2010
    Publication date: April 12, 2012
    Applicants: Centre National de la Recherche Scientifique, International Business Machines Corporation
    Inventors: Catherine Anne Dubourdieu, Martin Michael Frank, Vijay Narayanan
  • Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate
    Patent number: 7223677
    Abstract: The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.
    Type: Grant
    Filed: June 24, 2004
    Date of Patent: May 29, 2007
    Assignee: Agere Systems, Inc.
    Inventors: Martin Michael Frank, Yves Chabal, Glen David Wilk, Martin L. Green
  • Semiconductor device using an insulating layer having a seed layer
    Patent number: 6825538
    Abstract: The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a substrate. The seed layer is formed by removing hydrogen forming the substrate, depositing a seed layer precursor and exposing the precursor to excited atoms to form a seed layer on the substrate.
    Type: Grant
    Filed: November 20, 2002
    Date of Patent: November 30, 2004
    Assignee: Agere Systems Inc.
    Inventors: Martin Michael Frank, Yves Chabal, Glen David Wilk
  • Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate
    Publication number: 20040235313
    Abstract: The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.
    Type: Application
    Filed: June 24, 2004
    Publication date: November 25, 2004
    Applicant: Agere Systems, Inc.
    Inventors: Martin Michael Frank, Yves Chabal, Glen David Wilk, Martin L. Green
  • Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate
    Publication number: 20040099889
    Abstract: The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.
    Type: Application
    Filed: November 27, 2002
    Publication date: May 27, 2004
    Applicant: Agere Systems, Inc.
    Inventors: Martin Michael Frank, Yves Chabal, Glen David Wilk, Martin L. Green
  • Process for semiconductor device fabrication in which an insulating layer is formed over a semiconductor substrate
    Publication number: 20040094809
    Abstract: The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a substrate. The seed layer is formed by removing hydrogen from the substrate, depositing a seed layer precursor and exposing the precursor to excited atoms to form a seed layer on the substrate. In addition to serving as a template for the growth of a high K dielectric layer, the seed layer retards the undesirable oxidation of the silicon surface thereby improving the performance of active devices that include the insulating layer.
    Type: Application
    Filed: November 20, 2002
    Publication date: May 20, 2004
    Applicant: Agere Systems, Inc.
    Inventors: Martin Michael Frank, Yves Chabal, Glen David Wilk