Patents by Inventor Martin P. Lepselter

Martin P. Lepselter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High capacity sputter-etching apparatus
    Patent number: 4268374
    Abstract: A high-throughput apparatus for sputter etching or reactive sputter etching of wafers comprises a large-area electrode centrally disposed within a relatively small-area cylindrical electrode. Wafers to be etched are mounted on the inside surface of the cylindrical electrode. A source of a-c power is capacitively coupled to the cylindrical electrode and the center electrode is grounded. By establishing a suitable plasma within the apparatus, simultaneous anisotropic etching of multiple wafers can be achieved.
    Type: Grant
    Filed: August 9, 1979
    Date of Patent: May 19, 1981
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Martin P. Lepselter
  • High speed lateral bipolar transistor
    Patent number: 4259680
    Abstract: A bipolar transistor NPN structure (20) is constructed at a major surface of a silicon body with a P-type polycrystalline silicon electrode (13) contacting a P-type base zone (13.6). Excess acceptor impurities from the polycrystalline silicon electrode (13) are diffused into the base zone (13.6) in order to tailor its conductivity profile.
    Type: Grant
    Filed: April 17, 1980
    Date of Patent: March 31, 1981
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Martin P. Lepselter, Simon M. Sze
  • Mask structure for x-ray lithography
    Patent number: 4253029
    Abstract: A mask substrate for use in an x-ray lithographic system comprises a boron nitride member (32, FIG. 2) coated with a polyimide layer (20) whose thickness is approximately the same as that of the boron nitride member. The substrate is mechanically strong and both optically and x-ray transparent. Mask patterns formed on the substrate are characterized by low distortion and a low defect density.
    Type: Grant
    Filed: May 23, 1979
    Date of Patent: February 24, 1981
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Martin P. Lepselter, Hyman J. Levinstein, Dan Maydan