Abstract: An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and at least one further quantum well layer disposed outside the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein the first wavelength range is in an infrared spectral range invisible to a human eye, and the second wavelength range includes wavelengths at least partially visible to the human eye.

Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

Abstract: A method of transmitting optical data includes providing a plurality of light sources in a transmission system, transmitting a data signal with data to be transmitted to the transmission system, decomposing the data signal in the transmission system into N different sub-signals, wherein N is a natural number with N?2, and controlling the light sources based on the sub-signals such that each of the light sources emits light according to one of the sub-signals and the light emitted overall by the light sources transmits the data.

Abstract: A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.

Abstract: The present disclosure provides apolipoprotein (apo) mimetics useful for the treatment of age-related macular degeneration (AMD) and other eye disorders. The apo mimetics can be peptides/polypeptides that mimic, e.g., the lipid-clearing action of apolipoproteins such as apoA-I and apoE. The apo mimetics can exert other beneficial effects, such as reduction of inflammation, oxidative stress and neovascularization. The apo mimetics can be used to treat any stages (including the early, intermediate and advance stages) of AMD, and any phenotypes of AMD, including geographic atrophy (GA) (including non-central GA and central GA) and neovascularization (NV) (including types 1, 2 and 3 NV). The apo mimetics can be used alone or in conjunction with other therapeutic agents, such as a complement inhibitor and/or an anti-angiogenic agent, to treat AMD, including atrophic AMD and neovascular AMD, and other eye disorders.

Abstract: A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the method include A) providing at least two source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chip; B) providing a target substrate having a mounting plane, the mounting plane being configured for mounting the semiconductor chip; and C) transferring at least part of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips, within one type, maintain their relative position with respect to one another, so that each type of semiconductor chips arranged on the target substrate has a different height above the mounting plane, wherein the semiconductor chips are at least one of at least partially stacked one above the other or at least partially applied to at least one casting layer.

Abstract: An optoelectronic semiconductor chip includes a rear side with a center and with two contact points for electrical contacting of the semiconductor chip, the contact points being spaced apart from one another, and two solder pads arranged on the contact points, wherein the center is located in a region between the contact points, the solder pads protrude from the rear side and are exposed, and on average, the solder pads are thicker further away from the center than in the vicinity of the center or vice versa.

Abstract: A method for producing a composite component (100) and a composite component (100) comprising a plurality of components (10), a removable sacrificial layer (4), an anchoring structure (3) and a common intermediate carrier (90) are specified. The components each have a semiconductor body (2) comprising an active zone (23), are configured to generate coherent electromagnetic radiation and are arranged on the common intermediate carrier. The sacrificial layer is arranged in a vertical direction between the intermediate carrier and the components. The anchoring structure comprises a plurality of anchoring elements (3A, 3B), wherein the anchoring structure and the sacrificial layer provide a mechanical connection between the intermediate carrier and the components.

Abstract: An epitaxial wavelength conversion element (100) is specified which comprises a semiconductor layer sequence (1) with an active layer (10) arranged between a first cladding layer (11) and a second cladding layer (12), the active layer being embodied to absorb light in a first wavelength range and to re-emit light in a second wavelength range, which is different from the first wavelength range, wherein the first cladding layer and the active layer are based on a III-V compound semiconductor material system and wherein the second cladding layer is based on a II-VI compound semiconductor material system. Furthermore, a light-emitting semiconductor device comprising a light-emitting semiconductor chip and an epitaxial wavelength conversion element and methods for manufacturing the epitaxial wavelength conversion element and the light-emitting semiconductor device are specified.

Abstract: A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.

Abstract: A semiconductor laser and a method for producing such a semiconductor laser are disclosed. In an embodiment a semiconductor laser has at least one surface-emitting semiconductor laser chip including a semiconductor layer sequence having at least one active zone configured to generate laser radiation and a light exit surface oriented perpendicular to a growth direction of the semiconductor layer sequence. The laser further includes a diffractive optical element configured to expand and distribute the laser radiation, wherein an optically active structure of the diffractive optical element is made of a material having a refractive index of at least 1.65 regarding a wavelength of maximum intensity of the laser radiation; and a connector engaging at least in places into the optically active structure and completely filling the optically active structure at least in places.

Abstract: A display device is disclosed. In an embodiment a display device includes a carrier including a plurality of switches, a semiconductor layer sequence arranged on the carrier, the semiconductor layer sequence comprising an active region configured to generate primary radiation and forming a plurality of pixels, wherein each switch is configured to control at least one pixel and an optical element arranged on each pixel on a radiation exit surface of the semiconductor layer sequence facing away from the carrier.

Abstract: A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

Abstract: A method of transmitting optical data includes providing a plurality of light sources in a transmission system, transmitting a data signal with data to be transmitted to the transmission system, decomposing the data signal in the transmission system into N different sub-signals, wherein N is a natural number with N?2, and controlling the light sources based on the sub-signals such that each of the light sources emits light according to one of the sub-signals and the light emitted overall by the light sources transmits the data.

Abstract: A semiconductor laser includes a contact carrier having electrical contact surfaces to electrically contact a semiconductor layer sequence, an electrical connecting line from a main side of the semiconductor layer sequence facing away from the contact carrier and a plurality of capacitors, wherein the connecting line is located on or in the semiconductor layer sequence, at least two of the capacitors are present, the capacitances of which differ by at least a factor of 50, the capacitor having a smaller capacitance is configured to supply the active zone with current immediately after a switch-on operation, and the capacitor having the larger capacitance is configured to a subsequent current supply, the capacitor having the smaller capacitance directly electrically connects to the active zone, and a resistor is arranged between the capacitor having the larger capacitance and the active zone, the resistor having a resistance of at least 100 ?.

Abstract: A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.

Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

Abstract: The present disclosure provides apolipoprotein (apo) mimetics useful for the treatment of age-related macular degeneration (AMD) and other eye disorders. The apo mimetics can be peptides/polypeptides that mimic, e.g., the lipid-clearing action of apolipoproteins such as apoA-I and apoE. The apo mimetics can exert other beneficial effects, such as reduction of inflammation, oxidative stress and neovascularization. The apo mimetics can be used to treat any stages (including the early, intermediate and advance stages) of AMD, and any phenotypes of AMD, including geographic atrophy (GA) (including non-central GA and central GA) and neovascularization (NV) (including types 1, 2 and 3 NV). The apo mimetics can be used alone or in conjunction with other therapeutic agents, such as a complement inhibitor and/or an anti-angiogenic agent, to treat AMD, including atrophic AMD and neovascular AMD, and other eye disorders.

Abstract: A method for operating a light-emitting device includes operating, at least for some pixels, a selected subpixel of a pixel and at least one further subpixel of the pixel configured to emit light of a different color to display a pure color corresponding to a dominant wavelength of the selected subpixel and providing, at least for some pixels, a correction matrix associated with the pixel for adjusting brightness of the subpixels of the pixel, wherein the correction matrix is provided by determining, at least for some pixels, a brightness of each subpixel of the pixel necessary to emit light of a given color, determining, at least for some pixels, a dominant wavelength (?r, ?g, ?b) of each subpixel, plotting dominant wavelengths (?r, ?g, ?b) of each subpixel in a CIE-XY color space and forming color triangles, and determining inner triangles of the color triangles in pairs.

Abstract: An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and at least one further quantum well layer disposed outside the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein the first wavelength range is in an infrared spectral range invisible to a human eye, and the second wavelength range includes wavelengths at least partially visible to the human eye.