Abstract: The present invention relates to a sputtering target consisting of an alloy consisting of Co, Zr, Ta and, optionally, one or more further element(s) X from the group of Mo, Pd, Ni, Ti, V, W, and B, characterized in that the target has a maximum magnetic permeability ?max of 60 or lower and/or characterized in that the target has a maximum pass through flux (PTF) variation (FMax?FMin)/FAverage of 0.2 or lower, preferably of 0.15 or lower, and most preferably of 0.10 or lower.

Abstract: The present invention relates to a sputtering target comprising Ni, W and, optionally, one or more further metal(s) X selected from the group of the refractory metals, Sn, Al and Si, which has a normalized peak intensity ratio PIR=INi/IW·(AW+Ax)/ANi of 0.40 or greater, wherein INi is the intensity of the (111) peak of Ni, IW is the intensity of the (110) peak of W, Aw is the fraction of W in the target in atom %, Ax is the total fraction of the one or more further metals selected from the group of the refractory metals, Sn, Al and Si in the target in atom %, ANi is the fraction of Ni in the target in atom %, and wherein the intensities of the peaks are determined by X-ray powder diffraction using Cu-Kalpha radiation.

Abstract: The invention relates to a method for producing a shaped part comprising a solid metallic glass. According to the method, a preform is shaped below the glass transition temperature and is then heated to a temperature above the glass transition temperature.

Abstract: The present invention relates to a sputtering target, comprising a silver alloy comprising a first element, selected from indium, tin, antimony and bismuth, in an amount of 0.01 to 2 wt. %, based on the total weight of the silver alloy, and 0.01 to 2 wt. % titanium, based on the total weight of the silver alloy, and having an average grain size of no more than 55 ?m.

Abstract: The present invention relates to a sputtering target comprising Ni, W and, optionally, one or more further metal(s) X selected from the group of the refractory metals, Sn, Al and Si, which has a normalized peak intensity ratio PIR=INi/Iw·(Aw+Ax)/ANI of 0.40 or greater, wherein INi is the intensity of the (111) peak of Ni, Iw is the intensity of the (110) peak of W, Aw is the fraction of W in the target in atom %, Ax is the total fraction of the one or more further metals selected from the group of the refractory metals, Sn, Al and Si in the target in atom %, ANi is the fraction of Ni in the target in atom %, and wherein the intensities of the peaks are determined by X-ray powder diffraction using Cu-Kalpha radiation.

Abstract: The present invention relates to a process for preparing a tubular article, comprising (a) providing a carrier tube, (b) providing a metal coating on the carrier tube by applying a liquid metal phase onto the carrier tube and solidifying the liquid metal phase, (c) applying a contact pressure to the metal coating by at least one densification tool, and moving the densification tool and the metal coating relative to each other.

Abstract: Known cylindrical sputtering targets comprise a substrate and a target material that forms a layer on the substrate, said layer has a thickness d, wherein the target material comprises TiOx as the main component, and x is within a range of 1<x<2. Starting therefrom and in order to provide large-sized cylindrical sputtering targets with a thick target layer comprising sub-stoichiometric TiO2 it is proposed that x is within a range of 1.45<x<1.7 that allows a target layer thickness d which is larger than 10 mm.

Abstract: A double-layer system includes a metal layer facing away from a viewer and a coating facing the viewer. In order to make the layer system production process as simple as possible and to provide a sputter deposition method that dispenses entirely with the use of reactive gases in the sputtering atmosphere or requires only a small amount thereof, the coating is in the form of an optically partially absorbing layer which has an absorption coefficient kappa of less than 0.7 at a wavelength of 550 nm and a thickness ranging from 30 to 55 nm.

Abstract: The present invention relates to a sputtering target, comprising a silver alloy comprising a first element, selected from indium, tin, antimony and bismuth, in an amount of 0.01 to 2 wt. %, based on the total weight of the silver alloy, and 0.01 to 2 wt. % titanium, based on the total weight of the silver alloy, and having an average grain size of no more than 55 ?m.

Abstract: A double-layer system includes a metal layer facing away from a viewer and a coating facing the viewer. In order to make the layer system production process as simple as possible and to provide a sputter deposition method that dispenses entirely with the use of reactive gases in the sputtering atmosphere or requires only a small amount thereof, the coating is in the form of an optically partially absorbing layer which has an absorption coefficient kappa of less than 0.7 at a wavelength of 550 nm and a thickness ranging from 30 to 55 nm.

Abstract: The invention relates to a sputtering target containing a sputtering material containing a metal oxide. The sputtering material contains zirconium and titanium as metals and contains at least one mixed oxide phase.

Abstract: The present invention relates to a process for preparing a tubular article, comprising (a) providing a carrier tube, (b) providing a metal coating on the carrier tube by applying a liquid metal phase onto the carrier tube and solidifying the liquid metal phase, (c) applying a contact pressure to the metal coating by at least one densification tool, and moving the densification tool and the metal coating relative to each other.

Abstract: The present invention relates to a sputtering target comprising a silver alloy that contains 5-25% by weight of palladium, based on the total amount of silver alloy, and has a mean grain size in the range of 25-90 ?m.

Abstract: A tube-shaped sputtering target is provided having a carrier tube and an indium-based sputtering material arranged on the carrier tube. The sputtering material has a microstructure having a mean grain size of less than 1 mm, measured as the mean diameter of the grains on the sputtering-roughened surface of the sputtering material.

Abstract: A light-absorbing layer system includes an absorber layer having an oxidic matrix. The oxidic matrix is based on a base component made of zinc oxide, tin oxide and/or indium oxide, and on an added component which can replace the base component K1 up to a fraction of 75% by weight. The added component consists of niobium oxide, hafnium oxide, titanium oxide, tantalum oxide, vanadium oxide, yttrium oxide, zirconium oxide, aluminum oxide and/or mixtures thereof. A blackening component, made of molybdenum, tungsten and alloys and mixtures thereof, is distributed in the matrix and is present either as metal or as substoichiometric-oxidic compound of the metal, such that the layer material has a degree of reduction which is defined by an oxygen content of at most 65% of the stoichiometrically maximum oxygen content. The weight fraction of the blackening component is in the range between 20 and 50% by weight.

Abstract: The invention relates to a sputtering target containing a sputtering material containing a metal oxide. The sputtering material contains zirconium and titanium as metals and contains at least one mixed oxide phase.

Abstract: A sputtering target is provided which ensures the production of unvaryingly homogenous layers of the sputtering material during the lifespan of the sputtering target. The sputtering target includes a mixture of oxides of indium, zinc, and gallium, the mixture containing at least one ternary mixed oxide of indium, zinc, and gallium and at least one amorphous phase. The portion of ternary mixed oxides of indium, zinc, and gallium is at least 50 weight percent, relative to the total weight of the mixture, and the portion of amorphous phase is at least 20 weight percent, relative to the total weight of the mixture.

Abstract: Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 m2 as a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 ?m, an oxygen content of less than 50 wt.

Abstract: A TFT structure is provided in which an oxidic semiconductor is used in combination with an electrode material based on a Cu alloy.

Abstract: Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 m2 as a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 ?m, an oxygen content of less than 50 wt.