Abstract: A tube-shaped sputtering target is provided having a carrier tube and an indium-based sputtering material arranged on the carrier tube. The sputtering material has a microstructure having a mean grain size of less than 1 mm, measured as the mean diameter of the grains on the sputtering-roughened surface of the sputtering material.

Abstract: A TFT structure is provided in which an oxidic semiconductor is used in combination with an electrode material based on a Cu alloy.

Abstract: A sputtering target is provided which ensures the production of unvaryingly homogenous layers of the sputtering material during the lifespan of the sputtering target. The sputtering target includes a mixture of oxides of indium, zinc, and gallium, the mixture containing at least one ternary mixed oxide of indium, zinc, and gallium and at least one amorphous phase. The portion of ternary mixed oxides of indium, zinc, and gallium is at least 50 weight percent, relative to the total weight of the mixture, and the portion of amorphous phase is at least 20 weight percent, relative to the total weight of the mixture.

Abstract: An adhesive is provided, in particular for the adhesion of conductive materials, having at least one binder component and fillers, wherein the fillers contain fibers or a fiber-powder mixture and the fibers and/or powder contain an electrically conductive material. Further, an assembly is provided made of a sputtering target material and a carrier material with an adhesive.

Abstract: A tubular target is provided having a cylindrical carrier tube, at least one target tube arranged on its exterior surface, and a connecting layer arranged between the target tube and the carrier tube. The connecting layer is electrically conductive and has a wetting degree of >90%.

Abstract: A sputter target is made of a material comprising at least two phases or components, wherein at least one minor phase has low solubility in the matrix and has a higher melting point than the matrix. The at least one minor phase has a mean particle size of 10 ?m maximum of its grains or of agglomerates formed by its grains, and the material has a density of at least 98% of its theoretical density.

Abstract: A tubular sputtering target with a target body and with an attachment device arranged at at least one end of the target body. The attachment device and/or an end cover are joined with the target body by material joining or positive locking.

Abstract: The invention concerns a sputter target on a metal or metal alloy base with a melting point of not more than 750° C., especially tellurium alloy, with a microstructure of powder particles compacted by means of powder metallurgy, where the primary microstructure of the powder particles is very fine as compared with their size and where the particle size is clearly greater than the grain size of the primary microstructure.

Abstract: A cobalt based alloy having a chromium content in the range of 18-21% permits a high degree of magnetic field penetration which is comparable to non-ferromagnetic alloys. The alloy preferably contains 8-18% Pt and optionally may contain small amounts of Mo, Pd, Ni, Ti, V, Ta, W, and B.

Abstract: An indium oxide/tin oxide powder with 5-15 wt. % tin oxide is subjected to an annealing treatment at T≧1, 000° C. and is then partially reduced and subjected to hot isostatic pressing to produce a sputtering target with a density of at least 95% of the theoretical density and a thermal conductivity of at least 14 Wm−1K−1.

Abstract: Target for a magnetron-cathode sputtering apparatus is made from a cobalt base alloy containing additional elements in such concentrations that intermetallic phases are formed with at least one of these elements and intermetallic phases are observed on the basis of the phase diagram in the state of equilibrium at the operating temperature of the target. The grain boundaries, sub-grain boundaries, twin-grain boundaries or slip bands of the cobalt mixed crystal forming the matrix are decorated with the elements forming the intermetallic phases. X-ray diffraction diagrams made from the target display reflections of an intermetallic phase which is largely absent in the cast state and which forms only during a heat treatment in the temperature range below the solidus temperature of the alloy by a solid state reaction.

Abstract: Compacted ITO material is ground to a powder with particles in the size range of less than 500 .mu.m, whereupon the powder thus obtained is molded into new target blanks, either alone or in a mixture with unused ITO powder, under the simultaneous action of pressure and temperature. The temperature is kept sufficiently low so that recrystallization does not take place and the original grain size is preserved.

Abstract: The tin-containing component of a powder mixture includes SnO and is subjected to a mixing treatment with the In.sub.2 O.sub.3 before compaction to adjust the degree of reduction of the sputtering target in a simple and reproducible manner.

Abstract: A target for production of transparent electrically conductive layers by cathode sputtering is produced from indium oxide-tin oxide powder mixtures or coprecipitated indium oxide-tin oxide powders. A target with especially high mechanical strength consists of an oxide ceramic material into which metallic phase components have been incorporated in a uniform and finely distributed manner and which has a density of more than 96% of the theoretical density of indium oxide/tin oxide consisting purely of oxide.