Patents by Inventor Maryan Ashouei

Maryan Ashouei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR IMPROVING WRITABILITY OF SRAM MEMORY
    Publication number: 20120063211
    Abstract: A method for improving writability of an SRAM cell is disclosed. In one aspect, the method includes applying a first voltage higher than the global ground voltage and a third voltage higher than the global supply voltage to the ground supply nodes of the invertors of the SRAM cell, pre-charging one of the complementary bitlines to the global ground voltage, and applying a second voltage higher than the global supply voltage to the access transistors during a write operation to the SRAM cell.
    Type: Application
    Filed: September 13, 2011
    Publication date: March 15, 2012
    Applicants: IMEC, Katholieke Universiteit Leuven, Stichting IMEC Nederland
    Inventors: Vibhu Sharma, Stefan Cosemans, Wim Dehaene, Francky Catthoor, Maryan Ashouei, Jos Huisken