Abstract: A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.

Abstract: A deposition film is formed on a substrate in a deposition space (A) by the chemical reaction between a gaseous precursor of a higher silicon halide or a higher halosilane formed in a decomposition space (B) and a separately-introduced gaseous, activated species of hydrogen, silane or a halosilane formed in a decomposition space (C).

Abstract: There is disclosed a device for forming a deposited film which forms a deposited film by bringing a gaseous starting material for formation of a deposited film into contact with a gaseous oxidizing agent having the property of oxidation action on said starting material, thereby causing a chemical reaction to occur, comprising a plural number of chambers for formation of a deposited film connected to one another, said chamber having a gas releasing means having an orifice for releasing said gaseous starting material and an orifice for releasing said gaseous oxidizing agent provided respectively on both wall surfaces opposed to each other, and a support setting means which is arranged so that at least a part of its constitution may be included within the plane formed by linking mutually the gas releasing means on the both wall surfaces.

Abstract: A method for forming a deposition film, comprising decomposing a first compound containing germanium and halogen in an activation chamber by applying an energy to form an active species; separately introducing, into a film-forming chamber for forming a deposition film on a substrate, a second compound containing silicon and hydrogen and the active species, which is capable of chemical interaction with the second compound containing silicon and hydrogen; and applying to a mixture of the second compound and the active species at least one excitation energy selected from optical, thermal and discharge energies to excite the second compound in the mixture, thereby facilitating the formation of a deposition film on the substrate.

Abstract: An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the

Abstract: There is described a device for forming a deposited film on a substrate in a vacuum chamber through utilization of reaction between a gasifiable starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidization action for the gasifiable starting material which has a gas introducing means comprising a pipe for introducing said gasifiable starting material and a pipe for introducing said gaseous halogenic oxidizing agent where the pipes are arranged in a multi-concentric structure and at least one of the pipes except the outermost pipe is constituted of a porous pipe or has a hole opened through the wall thereof and the outermost pipe has at least one opening oriented toward the substrate.

Abstract: There is disclosed a device for forming a deposited film which forms a deposited film by bringing a gaseous starting material for formation of a deposited film into contact with a gaseous oxidizing agent having the property of oxidation action on said starting material, thereby causing a chemical reaction to occur, comprising a plural number of chambers for formation of a deposited film connected to one another, said chamber having a gas releasing means having an orifice for releasing said gaseous starting material and an orifice for releasing said gaseous oxidizing agent provided respectively on both wall surfaces opposed to each other, and a support setting means which is arranged so that at least a part of its constitution may be included within the plane formed by linking mutually the gas releasing means on the both wall surfaces.

Abstract: An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the

Abstract: There is disclosed a device for forming a deposited film on a substrate through utilization of chemical reaction between a gaseous starting material for a film to be formed and a gaseous halogenic oxidizing agent which has one or more gas introducing means having a multi-tubular structure with a converted tip end or having a meeting space for both the gases.

Abstract: There is provided an improved thin-film transistor of which a principal semiconducting layer comprises a layer composed of an amorphous material prepared by (a) introducing (i) a gaseous substance containing atoms capable of becoming constituents for said layer into a film forming chamber having a substrate for thin-film transistor through a transporting conduit for the gaseous substance and (ii) a gaseous halogen series substance having a property to oxidize the gaseous substance into the film forming chamber through a transporting conduit for the gaseous halogen series oxidizing agent, (b) chemically reacting the gaseous substance and the gaseous halogen series agent in the film forming chamber in the absence of a plasma to generate plural kinds of precursors containing exited precursors and (c) forming said layer on the substrate with utilizing at least one kind of those precursors as a supplier.

Abstract: A method for forming a deposited film, which comprises introducing a gaseous starting material containing an element in the Group II of the periodic table, a starting material containing an element in the Group VI of the periodic table which are gasifiable for formation of a deposited film, and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

Abstract: A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and

Abstract: A method for forming a deposited film comprises introducing a gaseous starting material containing In atoms or Sn atoms for formation of a deposited film, a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material and an oxygen-containing gaseous compound into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing a presursor under excited state, and forming a deposited film on a substrate existing in a film forming space with the use of at least one precursor of these precursors as a feeding source for a constituent element of the deposited film.

Abstract: A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.

Abstract: An improved electrophotographic photosensitive member having a desired light receiving layer prepared by the use of a substance capable of contributing to form a deposited film and an electronically oxidizing agent in the absence of a plasma. A process and an apparatus for preparing the electrophotographic photosensitive member.

Abstract: A method for forming a deposited film comprises introducing into a reaction space a gasifiable starting material containing a transition metal element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect contact therebetween to thereby chemically form a plural number of precursors including precursors under excited state, and forming a metal deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.

Abstract: A method for forming deposited film by introducing into a reaction space a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming said deposited film on a substrate previously position in a film forming space spatially communicated with said reaction space with the use of at least one precursor of these precursors as the feeding source for the constituent element of said deposited film, said method comprising the step of increasing the proportion of the amount of said gaseous starting material introduced relative to the amount of said gaseous halogenic oxidizing agent introduced in said reaction space.

Abstract: An apparatus for forming a deposited film by bringing gaseous starting materials for forming deposited film contact with a gaseous halogenic oxidizing agent which exerts oxidative effect on the starting materials, comprises, in a chamber for forming the deposited film, gas discharge means comprised of a gas discharge pipe for discharging the gaseous starting materials and a gas discharge pipe for discharging the halogenic oxidizing agent and means for disposing supports on which a plurality of cylindrical supports for depositing the film thereon are arranged around the gas discharge means.

Abstract: A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.

Abstract: A method for forming a deposited film by introducing the active species (A) formed by decomposition of a subjective starting material gas (A) which is the major flow rate component and the active species (B) formed by decomposition of an objective starting material gas (B) which is the minor flow rate component and the activated species (C) formed from a compound (C) separately from each other into a film forming space for formation of a deposited film on a substrate and permitting said active species (A) and active species (B) to chemically react with said activated species (C) to thereby form a deposited film on the substrate comprises forming a multi-layer structure film by varying the amount of said active species (B) introduced into the film forming space.