Abstract: A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (D) for formation of a valence electron controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a doped deposited film.

Abstract: A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (B) for formation of a band gap controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a deposited film controlled in band gap on a substrate existing in the film forming space.

Abstract: A method for forming a deposited film, which comprises introducing gaseous starting materials, containing group III and/or group V compound as the constituent element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film of a substrate existing in a film-forming space with the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

Abstract: A process for producing an electroluminescent device comprises providing in a film forming space for forming an electroluminescent film a substrate having an electrode formed on the surface thereof, said electrtode optionally having a first insulating layer formed thereon, introducing into said film forming space the compounds (A), (B) and (C) represented by the general formulae (A), (B) and (C) shown below and a gaseous halogenic oxidizing agent capable of chemically reacting with at least one of said compounds (A), (B) and (C), respectively, to thereby form an electroluminescent film on said electrode of said substrate, and if desired forming a second insulating layer and electrode in succession thereon:MmRn (A)AaBb (B)JjQq (C)wherein m is a positive integer equal to the valence of R or said valence multiplied by an integer, n is a positive integer equal to the valence of M or said valence multiplied by an integer, M is zinc (Zn) element, R is hydrogen (H), halogen (X) or hydrocarbon group; a is a positive

Abstract: There is disclosed an apparatus for forming deposited film which forms deposited film on a substrate by introducing a gaseous starting material for formation of deposited film and a gaseous oxidizing agent having the property of oxidation action for said gaseous starting material through separate routes respectively into a film forming space to thereby effect chemical contact therebetween, comprising one or two or more chambers for formation of deposited film and one or two or more etching chambers for etching at least one of said substrate and the deposited film formed on the substrate connected to one another.

Abstract: A method for forming a thin multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises forming at least one layer of said semiconductor thin films on a substrate by introducing a precursor (B) formed in a decomposition space (B) which becomes the starting material for deposited film formation and an active species (C) formed in a decomposition space (C) which interacts with said precursor (B) separately into a deposition space (A) for forming a thin film to thereby effect chemical reaction through the interaction between said precursor (B) and said active species (C), and forming at least one layer of other thin films by introducing a gaseous starting material (a) for thin film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a p

Abstract: An improved photoelectromotive force member having desired photoelectric conversion layer prepared by the use of a substance capable of contributing to form a deposited film and an electronically oxidizing agent in the absence of a plasma. A process and an apparatus for preparing the same.

Abstract: There is provided an apparatus for continuously preparing an improved light receiving element for photoelectromotive force member or image-reading photosensor comprising the plural number of continuously connected reaction chambers through opening and shutting gates for forming respective constituent layers for said light receiving element and a substrate conveying belt moving through the reaction chambers, each of the reaction chambers having a film forming space, a gas supplying means being extended into the film forming space through the upper wall of the reaction chamber, an exhausting means being disposed at the bottom portion of the reaction chamber and the substrate conveying and supporting means being positioned in the reaction chamber, the said gas supplying means having (a) a conduit for transporting (i) a gaseous substance capable of contributing to form a deposited film and (b) a conduit for transporting (ii) a gaseous oxidizing agent being so disposed that the gaseous substance (i) and the oxidiz

Abstract: A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate comprises forming at least one of said valence electron controlled semiconductor thin layers controlled according to the plasma CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.

Abstract: A method for forming a deposition film comprises introducing, into a film forming chamber for forming a deposition film on a substrate, a silicon compound as a material for film formation and an active species generated from a compound containing carbon and halogen and capable of chemical interaction with said silicon compound, and applying thereto at least an energy selected from optical, thermal and discharge energies to excite said silicon compound and to cause a reaction thereof, thus forming a deposition film on said substrate.

Abstract: An improved image-reading photosensor having a desired photoelectric conversion layer prepared in the absence of a plasma by the reaction of a substance capable of contributing to form a deposited film and an electronically oxidizing agent. A process and an apparatus for preparing the improved image-reading photosensor.

Abstract: A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate, comprises forming at least one of said valence electron controlled semiconductor thin layers according to the photo CVD method and forming at least one of other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.

Abstract: A method for forming a deposited film is provided which comprises forming a gas atmosphere containing an active species (a) obtained by decomposition of a silicon halide represented by the formula Si.sub.n X.sub.2n+2 (n is an integer of 1 or more and X represents a halogen atom) and at least one compound selected from the group of the compounds (A) consisting of acyclic silanes, silanes having cyclic structures, silanes containing an alkyl group and halo-substituted derivatives thereof in a film forming space (A) where a silicon-containing film is to be formed on a desired substrate, and then carrying out at least one of (1) exciting discharging in said gas atmosphere and (2) giving heat energy to said gas atmosphere, thereby forming a silicon-containing deposited film.

Abstract: An image holding member for electrostatic images or toner images has a three-layered insulating layer at the surface. The insulating layer is composed of an upper layer mainly composed of an organic solvent soluble thermoplastic resin, an intermediate layer mainly composed of an organic solvent soluble thermoplastic resin and a cured thermosetting resin, and a lower layer mainly composed of a cured thermosetting resin.

Abstract: A process for producing silicon-containing deposit films which comprises introducing a cyclic silane represented by the general formula (SiH.sub.2).sub.n, wherein n is 4, 5, or 6, in the gaseous state together with a carrier gas into a deposition chamber and applying heat to the introduced gases at ordinary pressure to decompose the cyclic silane and form a silicon-containing deposit film on a substrate placed in the deposition chamber.

Abstract: An electrophotographic photosensitive member has a photoconductive layer composed of cadmium sulfide bonded with a binder resin which is an acrylic resin having a glass transition point of 15.degree. to 70.degree. C. and an acid value of 10-40.

Abstract: An alternating copolymer of an olefinic unsaturated compound and a conjugated vinyl compound is produced by contacting said monomers with at least one organoboron halide or/and a mixture of at least one organo-compound of metal from Groups IIb, IIIb and IVb of the Mendeleev Periodic Table and at least one halogeno-compound of metal from Groups IIIb and IVb of the Mendeleev Periodic Table. A typical catalyst is ethylboron dichloride or a combination of triethylaluminum and tin tetrachloride.

Abstract: An olefin-acrylic ester copolymer-thermoplastic resin composition comprising one part by weight of an olefin-acrylic ester copolymer and 0.01 to 100 parts by weight of at least one thermoplastic resin having a modulus of elasticity of 10.sup.3 to 10.sup.5 kg/cm.sup.2 at room temperature and selected from the group consisting of crystalline thermoplastic resins and non-crystalline thermoplastic resins having a second-order transition point of 10.degree. C. or higher. The said composition is excellent in impact resistance, resistance to water, and alkali resistance and has improved surface characteristics as well as improved low temperature characteristics.

Abstract: A method for treating a leather, characterized by treating a leather with a polymer [II] obtained by polymerizing 5 to 2,000 parts by weight of at least one member selected from the group consisting of acrylic esters and methacrylic esters in which the alcohol moiety is a hydrocarbon- or halohydrocarbon-group having 1 to 20 carbon atoms, and 500 parts by weight or less of at least one vinyl compound having the formula: ##STR1## wherein R.sup.I and R.sup.II are independently a hydrogen atom, a halogen atom, a hydrocarbon- or halohydrocarbon-group having 1 to 8 carbon atoms, or Y; Y is a group having 1 to 20 carbon atoms and having a group selected from the group consisting of a carboxyl group, acid halide groups, a hydroxyl group, ether groups, and oxygen-containing cyclic compound residues; R.sup.III is an oxygen atom or >N-R.sup.IV wherein R.sup.

Abstract: An aqueous dispersion of 1 - 300 parts by weight of an olefin-acrylate copolymer, said olefin having 3 to 20 carbon atoms, in 100 parts by weight of water, the dispersion optionally containing a surface active agent in a proportion of 0.1 to 20 parts by weight per 100 parts by weight of the copolymer, in which dispersion the copolymer forms substantially the dispersed phase and the water forms the continuous phase. Said dispersion can be used in paints, fiber-treating agents, paper-treating agents, leather-treating agents and adhesives, and forms a film having excellent resistance to alkali, water, weathering and heat. The above copolymer is preferably an alternating copolymer although it may be a random copolymer.