Abstract: The present invention provides a protective element including (i) a PTC element having an opening passing through in the thickness direction, and (ii) a first electrode and a second electrode positioned on both main surfaces of the PTC element, the protective element characterized in that the first electrode extends from a main surface of the PTC element over an edge thereof and into the opening. A protective element of the present invention does not prevent the PTC element from expanding even when secured by a screw or caulking.

Abstract: The present invention proposes a protection device which has a large rated voltage and a large rated current, which is capable of sufficiently suppressing arc generation during activation, and which is also capable of providing suitable protection against overcurrent due to short circuiting or the like of a main circuit. The protection device of the present invention includes (i) a protection element which includes a first thermal fuse and a resistor, and in which the resistor generates heat as a result of current passing through the resistor when there are abnormalities, and the first thermal fuse is activated due to this heat and interrupts the current, (ii) a PTC element and a second thermal fuse which are electrically connected in parallel to the first thermal fuse and which are electrically connected in series to each other, and (iii) a current fuse which is electrically connected in series to the first thermal fuse.

Abstract: The present invention provides a protection device that can more surely protect an electronic or an electric apparatus even when an inrush current value is large and its magnitude has large dispersion, and that has a recovery property. The protection device of the present invention includes a PTC component; a resistive component; and a first terminal and a second terminal, wherein the first terminal, the PTC component, the resistive component, and the second terminal are electrically connected in series in this order.

Abstract: A semiconductor integrated circuit design tool includes a reference data defining module configured to define design data of one of a plurality of transistors implementing the semiconductor integrated circuit as reference data, a simulator configured to simulate each effective channel length of the transistors, based on the design data and a reference channel length based on the reference data, and an adjuster configured to adjust gate lengths of gate electrodes of the transistors to reduce a difference between the effective channel length and the reference channel length.

Abstract: A semiconductor integrated circuit design tool includes a reference data defining module configured to define design data of one of transistors implementing the semiconductor integrated circuit as reference data, a simulator configured to simulate on each effective channel length of the transistors, based on the design data and a reference channel length based on the reference data, and an adjuster configured to adjust gate lengths of gate electrodes of the transistors to reduce a difference between the effective channel length and the reference channel length.

Abstract: For making an isolation region on a semiconductor substrate without forming an unwanted bird beak, after forming an insulating film on the semiconductor substrate, the substate surface is covered with a resist mask. An LPD SiO.sub.2 film is deposited on the unmasked portion of the substrate surface, using a hydrofluoric acid solution containing silicon dioxide so as to be supersaturated. Thereafter, the mask is removed from the substrate surface. Further, after a groove is formed in the semiconductor substrate, it may be filled with the LPD SiO.sub.2 film to provide the isolation region in the substrate.