Abstract: A polymer containing a structural unit including an aromatic hydroxy group bonded to a main chain, where the aromatic hydroxy group is protected by an acid-labile group represented by the following formula (ALU-1) and is deprotected by action of an acid to become alkali-soluble. This provides: a polymer that makes it possible to form a resist film with which it is possible to form a pattern having extremely high isolated space resolution, small LER, and excellent rectangularity, effects of development loading and residue defects being suppressed, and the pattern having etching resistance and suppressed pattern collapse in the produced resist pattern; a chemically amplified positive resist composition containing the polymer; a resist patterning process using the chemically amplified positive resist composition; and a mask blank including the chemically amplified positive resist composition.

Abstract: A chemically amplified positive resist composition is provided comprising a polymer comprising units containing a phenolic hydroxy group and units containing a phenolic hydroxy group protected with an acid labile group, in which a carbon atom neighboring the carbon atom to which the phenolic hydroxy group protected with an acid labile group is attached is substituted with a specific group. A resist pattern with a high resolution, reduced LER, rectangularity, minimized influence of develop loading, and few development residue defects can be formed.

Abstract: A chemically amplified positive resist composition comprising (A) a base polymer, (B) a photoacid generator, and (C) a quencher is provided. The base polymer (A) contains a polymer comprising phenolic hydroxy group-containing units, aromatic ring-containing units, and units containing a phenolic hydroxy group protected with an acid labile group. The photoacid generator (B) and the quencher (C) are present in a weight ratio (B)/(C) of less than 3/1. The resist composition exhibits a very high isolated-space resolution and forms a pattern with reduced LER, rectangularity, minimized influences of develop loading and residue defects.

Abstract: The present invention is a sulfonium salt represented by the following formula (1), wherein “p” represents an integer of 1 to 3; R11 represents a hydrocarbyl group having 1 to 20 carbon atoms; Rf represents a fluorine atom or a fluorine-atom-containing C1 to C6 group selected from alkyl, alkoxy, and sulfide; “q” represents an integer of 1 to 4; RALU represents an acid-labile group; “r” represents an integer of 1 to 4; R12 represents a hydrocarbyl group having 1 to 20 carbon atoms; “s” represents an integer of 0 to 4; “t” represents an integer of 0 to 2; Rf and —O—RALU are bonded to adjacent carbon atoms; and X? represents a non-nucleophilic counterion having no polymerizable group.

Abstract: An object of the present invention is to provide a conductive polymer composition which has good filterability and good film formability of a flat film on an electron beam resist and can be suitably used for an antistatic film for electron beam resist writing, showing excellent antistatic property in the electron beam writing process due to the property of low volume resistivity (?·cm), and, reducing an effect on lithography by making an effect of an acid diffused from the film minimum, and further having excellent peelability by H2O or an alkaline developer after writing.

Abstract: A chemically amplified negative resist composition comprising (A) an acid generator in the form of a sulfonium salt having formula (A1) or iodonium salt having formula (A2) and (B) a base polymer containing a polymer comprising repeat units having formula (B1) is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with satisfactory LER and fidelity.

Abstract: A chemically amplified positive resist composition is provided comprising (A) an acid generator containing a specific sulfonium salt and/or a specific iodonium salt and (B) a base polymer containing a specific polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER, rectangularity and fidelity.

Abstract: A chemically amplified positive resist composition is provided comprising (A) a quencher in the form of a sulfonium salt of carboxylic acid having a nitrogen-bearing heterocycle and (B) a base polymer containing a specific polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER, fidelity and dose margin.

Abstract: A chemically amplified negative resist composition is provided comprising (A) a quencher in the form of a sulfonium salt of carboxylic acid having a nitrogen-bearing heterocycle and (B) a base polymer containing a specific polymer. The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER, fidelity and dose margin.

Abstract: A photomask blank has a resist film which is obtained by coating a chemically amplified positive resist composition comprising a polymer comprising phenolic hydroxy-containing repeat units and repeat units having a carboxy group which is protected with an acid labile group in the form of a tertiary hydrocarbyl group having an electron attractive moiety and/or hydroxy-substituted phenyl moiety bonded to the tertiary carbon, and an organic solvent. The resist film is processed to form a pattern with a high resolution, reduced LER, improved rectangularity, and pattern fidelity.

Abstract: A chemically amplified positive resist composition is provided comprising a polymer comprising units containing a phenolic hydroxy group and units containing a carboxy group protected with an acid labile group. A resist pattern with a high resolution, reduced LER, rectangularity, and minimized influence of develop loading can be formed.

Abstract: A chemically amplified positive resist composition is provided comprising (A) an acid diffusion-controlling agent in the form of an onium salt compound having a specific phenoxide anion, (B) a polymer comprising specific repeat units and adapted to be decomposed under the action of acid to increase its solubility in alkaline developer, and (C) a photoacid generator. A resist pattern with a high resolution, reduced LER, and improved CDU is formed. Because of minimal defects, the resist pattern can be inspected with light of short wavelength 300-400 nm.

Abstract: A chemically amplified positive resist composition is provided comprising a base polymer which contains a polymer comprising a phenolic hydroxy group-containing unit, a unit containing a phenolic hydroxy group protected with an acid labile group, and a unit containing a carboxy group protected with an acid labile group. The aromatic ring-containing repeat units account for at least 65 mol % of the overall repeat units of the polymer. A resist pattern with a very high resolution, reduced LER, improved rectangularity, and minimized influence of develop loading can be formed.

Abstract: A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

Abstract: A chemically amplified resist composition contains (A) a polymer compound containing one or two or more kinds of repeating units, at least one kind of the repeating units is polymerized from a polymerizable monomer with not more than 1000 ppm of a residual oligomer in a form of dimer to hexamer. An object of the present invention is to provide: a chemically amplified resist composition capable of achieving favorable resolution, pattern profile, and line edge roughness, and simultaneously suppressing development-residue defect, which would otherwise cause mask defect; and a method for forming a resist pattern by using this composition.

Abstract: A chemically amplified positive resist composition is provided comprising a base polymer which contains a polymer comprising an acid generating unit, a phenolic hydroxy group-containing unit, a unit containing a phenolic hydroxy group protected with an acid labile group, and a unit containing a carboxy group protected with an acid labile group. A resist pattern with a high resolution, reduced LER, improved rectangularity, and minimized influence of develop loading can be formed.

Abstract: A chemically amplified negative resist composition comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1) is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER or LWR.

Abstract: A negative resist composition comprising an onium salt having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.

Abstract: A chemically amplified positive resist composition is provided comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or Selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1). The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER and CDU.

Abstract: A chemically amplified negative resist composition comprising an alcohol compound of specific structure as a crosslinker has a high sensitivity and dissolution contrast and forms a pattern of good profile with reduced values of LER and CDU.