Abstract: A method of manufacturing a semiconductor device comprising forming a sacrificial layer including one or more conductive film on a semiconductor substrate, forming a cavity used as a template of electroplating in the sacrificial layer, growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical or convex electrode can be formed, and removing the sacrificial layer so that the electrode can be formed.

Abstract: A diffractive optical element includes a blazed diffraction grating having inclined facets and vertical facets arrayed in an alternating sequence, in which only the vertical facets of the blazed diffraction grating are frosted by ashing. Another diffractive optical element includes a blazed diffraction grating having inclined facets and vertical facets arrayed in an alternating sequence, in which only the vertical facets of the blazed diffraction grating have an opaque film formed thereon.

Abstract: A method of manufacturing a micro-structure having a plurality of step-like elements, includes the steps of etching a first region of a substrate, corresponding to a lowest step of the step-like element, with an appropriate depth, whereby a surface of the lowest step of the step-like element is defined, and etching, subsequently, a second region of the substrate, corresponding to another step of the step-like element, with an appropriate depth, whereby a surface of that step of the step-like element is defined.

Abstract: The present invention provides a diffraction optical element comprising a first optical member having a first diffraction grating, a second optical member having a second diffraction grating, wherein the first and second optical members are stacked so that the first and second diffraction gratings face each other inside the stacked members and so that a space is formed between the diffraction gratings, and a sealing member for hermetically sealing the space between the diffraction gratings.

Abstract: A diffraction optical element comprises a substrate, a diffraction grating formed on the substrate with a material with low ultraviolet resistance and an ultraviolet screening means arranged on the substrate at a position closer to the incident light receiving side of the optical element relative to the diffraction grating. The ultraviolet screening means comprises a dielectric multilayer film and is formed on the other side of the substrate than the side carrying the diffraction grating. Alternatively, the ultraviolet screening means may be provided as a separate member from a diffraction optical element and arranged at a position closer to the incident light receiving side of the diffraction optical element in an optical system.

Abstract: The object of this invention is to provide a mold releasing method for a diffraction optical element, which enables stable mass production of a diffraction optical element free from deformation or damage due to mold release. In order to achieve this object, a mold releasing method for a diffraction optical element, of releasing from a mold a diffraction optical element formed by using the mold and having a convex lens function, includes the steps of pressing a central portion of the diffraction optical element toward the mold, and pushing a periphery of the diffraction optical element in a direction to separate from the mold, so that mold release progresses from the periphery toward the central portion of the diffraction optical element. The method also includes the step of adjusting the balance with a plurality of hydraulic cylinders without pressing the central portion, so that mold release progresses toward the center.

Abstract: The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device includes at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.

Abstract: A method of manufacturing a semiconductor device comprising forming a sacrificial layer including one or more conductive film on a semiconductor substrate, forming a cavity used as a template of electroplating in the sacrificial layer, growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical or convex electrode can be formed, and removing the sacrificial layer so that the electrode can be formed.

Abstract: The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device comprises at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.

Abstract: A method of manufacturing an optical element is disclosed which comprises the steps of providing a molding material onto a mold; giving a local temperature difference to an interface between the mold and the molding material to separate the mold and the molding material from each other in an area; and successively enlarging the area of separation made by the temperature difference to entirely separate the mold and the molding material from each other.

Abstract: The present invention provides a diffraction optical element comprising a first optical member having a first diffraction grating, a second optical member having a second diffraction grating, wherein the first and second optical members are stacked so that the first and second diffraction gratings faces to each other inside the stacked members and so that a space is formed between the diffraction gratings, and a sealing member for hermetically sealing the space between the diffraction gratings.

Abstract: A diffraction optical element comprises a substrate, a diffraction grating formed on the substrate with a material with low ultraviolet resistance and an ultraviolet screening means arranged on the substrate at a position closer to the incident light receiving side of the optical element relative to the diffraction grating. The ultraviolet screening means comprises a dielectric multilayer film and is formed on the other side of the substrate than the side carrying the diffraction grating. Alternatively, the ultraviolet screening means may be provided as a separate member from a diffraction optical element and arranged at a position closer to the incident light receiving side of the diffraction optical element in an optical system.

Abstract: A semiconductor memory device includes a memory cell capacitor for storing information, wherein the memory cell capacitor includes a capacitor insulation film of a double oxide on a lower electrode. The lower electrode has a layered structure of Ir/IrO2/Ir or Ru/RuO2/Ru acting as a diffusion barrier of oxygen or Pb. Further, the use of a Pt—Ir alloy is disclosed for the lower electrode.

Abstract: A diffractive optical element having plural diffraction grating surfaces accumulated, wherein a pair of diffraction grating surfaces are positioned so that a protrusion and/or a recess formed on an outside of one diffraction grating surface engages with a recess and/or a protrusion formed on an outside of the other diffraction grating surface, and wherein the pair of diffraction grating surfaces are defined on materials having different refractive indices and different dispersions and being formed into a kinoform, or a shape and a height of blazed or binary, close to it, such that a largest optical path difference to be applied to light rays passing through the diffraction grating surfaces with respect to plural wavelengths becomes equal to a multiple, by an integral number, of the wavelength.

Abstract: A high-dielectric capacitor is formed by using a Ru lower electrode having a (002)-oriented principal surface, by depositing thereon a Ta2O5 film such that the Ta2O5 film has a (100)-principal surface.

Abstract: The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device comprises at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.

Abstract: A high-dielectric capacitor is formed by using a Ru lower electrode having a (002)-oriented principal surface, by depositing thereon a Ta2O5 film such that the Ta2O5 film has a (100)-principal surface.

Abstract: A method for growing a dielectric film containing Sr on a substrate includes the steps of: dissolving a Sr compound containing Sr((CH.sub.3).sub.5 C.sub.5).sub.2 into an organic solvent or mixing Sr(thd).sub.2 and an amine compound to form a source material; vaporizing the source material to produce a gaseous source material; and decomposing the gaseous source material, obtained in the step of vaporization, in the vicinity of a surface of a substrate held in a reaction chamber, to cause a deposition of a dielectric film containing Sr upon the surface of the substrate.

Abstract: A semiconductor memory device includes a memory cell capacitor for storing information, wherein the memory cell capacitor includes a capacitor insulation film of a double oxide on a lower electrode. The lower electrode has a layered structure of Ir/IrO.sub.2 /Ir or Ru/RuO.sub.2 /Ru acting as a diffusion barrier of oxygen or Pb. Further, the use of a Pt--Ir alloy is disclosed for the lower electrode.

Abstract: The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device comprises at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.