Abstract: An electromagnetic wave detector includes a semiconductor layer, an insulating layer disposed on the semiconductor layer and having an opening, a two-dimensional material layer extending from on the opening to on the insulating layer, including a connection part in contact with a peripheral part of the insulating layer facing the opening, and electrically connected to the semiconductor layer, a first electrode part disposed on the insulating layer and electrically connected to the two-dimensional material layer, a second electrode part electrically connected to the semiconductor layer, and a unipolar barrier layer disposed between the semiconductor layer and the connection part of the two-dimensional material layer and electrically connected to each of the semiconductor layer and the two-dimensional material layer.

Abstract: According to one embodiment, a charge/discharge system includes a storage battery and a control device. The storage battery is configured to absorb CO2 during charging and release CO2 during discharging. The control device is configured to control a charge/discharge operation of the storage battery. The control device is configured to calculate a power trading price. The control device is configured to calculate a power trading price. The control device is configured to control the charge/discharge operation of the storage battery to perform charging and discharging when the power trading price during charging is lower than the power trading price during discharging.

Abstract: A cartridge is configured to be attachable to a main body of an image forming apparatus and configured to receive toner supplied from a supply container. The cartridge includes a supply port configured to receive the toner supplied from the supply container, a shutter member configured to cover the supply port, and a locking member. The locking member is moved from a lock position to an unlock position to allow movement of the shutter member by using electric power supplied from the main body.

Abstract: The flow rate control device 10 includes a control valve 11, a restriction part 12 provided downstream of the control valve 11, an upstream pressure sensor 13 for measuring a pressure P1 between the control valve 11 and the restriction part 12, a differential pressure sensor 20 for measuring a differential pressure ?P between the upstream and the downstream of the restriction part 12, and an arithmetic control circuit 16 connected to the control valve 11, the upstream pressure sensor 13, and the differential pressure sensor 20.

Abstract: A synchronous core processing unit executes the same program as a program executed by another computer for an execution unit at a synchronization timing synchronized with a synchronous core processing unit of the other computer, and migrates the program being executed for which migration is requested according to characteristics of the program to a quasi-synchronous core processing unit. The quasi-synchronous core processing unit executes the program migrated from the synchronous core processing unit, and then migrates the program to the synchronous core processing unit. The synchronous core processing unit outputs, to an output comparison machine, an execution result obtained by executing the program migrated from the quasi-synchronous core processing unit at the synchronization timing.

Abstract: A rotor includes a shaft extending in an axial direction, a rotor core including laminations stacked in the axial direction, and at least one caulking portion at a radial-directional inner side of at least one magnet to caulk the laminations to each other. At least one magnet is embedded in the rotor core. At least one fixing portion fixes at least portions of outer peripheral edges of the laminations to each other. The caulking portion, the at least one magnet, and the at least one fixing portion are all arranged to be intersected by a straight line which is on a flat two-dimensional plane extending in a radial direction and a circumferential direction.

Abstract: A rotor includes a shaft, a rotor core, at least one magnet, and at least one fixing portion. The shaft extends in an axial direction. The rotor core includes laminations, and at least one caulking portion. The laminations are stacked in the axial direction. The at least one caulking portion is located at a radial-directional inner side of the at least one magnet to caulk the laminations to each other. The at least one magnet is embedded in the rotor core. The at least one fixing portion fixes at least portions of outer peripheral edges of the laminations to each other.

Abstract: A rotor includes a shaft, a rotor core, at least one magnet, and at least one fixing portion. The shaft extends in an axial direction. The rotor core includes laminations, and at least one caulking portion. The laminations are stacked in the axial direction. The at least one caulking portion is located at a radial-directional inner side of the at least one magnet to caulk the laminations to each other. The at least one magnet is embedded in the rotor core. The at least one fixing portion fixes at least portions of outer peripheral edges of the laminations to each other.

Abstract: A semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, a third nitride semiconductor layer on the second nitride semiconductor layer, an electrode on the third nitride semiconductor layer, and an insulating layer under the electrode and between the first nitride semiconductor layer and the second nitride semiconductor layer.

Abstract: According to an embodiment, a semiconductor device includes a semiconductor layer, a first insulating layer that has refractive index of 1.95 or less, contains silicon nitride, and located on the semiconductor layer, and a resin that is provided on the first insulating layer and is in contact with the first insulating layer.

Abstract: A semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, a third nitride semiconductor layer on the second nitride semiconductor layer, an electrode on the third nitride semiconductor layer, and an insulating layer under the electrode and between the first nitride semiconductor layer and the second nitride semiconductor layer.

Abstract: A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer located on the first nitride semiconductor layer, a first electrode on the second nitride semiconductor layer, a second electrode on the second nitride semiconductor layer, a p-type third nitride semiconductor layer on the second nitride semiconductor layer between the first electrode and the second electrode and in contact with the second nitride semiconductor layer, and a third electrode containing p-type polysilicon on the third nitride semiconductor layer and in contact with the third nitride semiconductor layer.

Abstract: A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer includes a metal portion, plural first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plural first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.

Abstract: According to one embodiment, there is provided a semiconductor device including a first semiconductor layer, a second semiconductor layer, a first insulating film, a first electrode, and a second insulting film. The first semiconductor layer includes a compound semiconductor. The second semiconductor layer is provided on the first semiconductor layer and includes a compound semiconductor. The first insulating film is provided on the second semiconductor layer. The first electrode is provided on the first insulating film. The second insulting film covers at least a portion of the first electrode and has a higher hydrogen concentration than the hydrogen concentration of the first insulating film.

Abstract: A semiconductor device includes a semiconductor layer, a gate insulation film on the semiconductor layer, and a gate electrode on the gate insulation film. The gate electrode includes a first metal compound layer with a first element also contained in the gate insulation film. A first metal layer is on the first metal compound layer, wherein the diffusion coefficient thereof in gold is smaller than the diffusion coefficient thereof in nickel. The first metal layer includes a second element also contained in the first metal compound layer. A gold layer is on the first metal layer. A second metal layer is on the gold layer. Third metal layers are on side surfaces of the gold layer. A source and drain electrode are provided. An interlayer insulation film is on the gate electrode.

Abstract: A charge pipe passage includes: a first engine-side pipe passage part which extends vertically; a second engine-side pipe passage part which is connected to a lower end of the first engine-side pipe passage part on one side in the vehicle widthwise direction and extends from one side to the other side in the vehicle widthwise direction above the engine body; and a third engine-side pipe passage part which is communicably connected to the second engine-side pipe passage part on the other side in the vehicle widthwise direction and is connected to the engine body, and at least a part of the charge pipe passage between a frame-side support part and an engine-side support part is formed of an elastic tube.

Abstract: A charge pipe passage includes a first tank-side pipe passage part which is connected to an upper surface of a fuel tank, and a second tank-side pipe passage part which is connected with the first tank-side pipe passage part and extends toward the other side of the fuel tank from one side of the fuel tank in the vehicle widthwise direction on an end portion thereof on a fuel tank side, and the first and second tank-side pipe passage parts, are fixed to the upper surface of the fuel tank.

Abstract: A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.

Abstract: A charge pipe passage includes a second pipe passage part which is connected to a fuel tank by way of a first pipe passage part and extends toward the other side from one side in the vehicle widthwise direction, and a third pipe passage part which is communicably connected with the second pipe passage part on the other side in the vehicle widthwise direction and has a highest part arranged at a highest position of the charge pipe passage at an intermediate position thereof. A first check valve is interposed on the third pipe passage part downstream of the highest part, an atmospheric air introducing pipe passage is connected to the third pipe passage part upstream of the first check valve, and a second check valve is interposed on the atmospheric air introducing pipe passage at a position higher than the highest part.

Abstract: A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.