Patents by Inventor Masaaki Ogawa

Masaaki Ogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11422484
    Abstract: A cartridge is configured to be attachable to a main body of an image forming apparatus and configured to receive toner supplied from a supply container. The cartridge includes a supply port configured to receive the toner supplied from the supply container, a shutter member configured to cover the supply port, and a locking member. The locking member is moved from a lock position to an unlock position to allow movement of the shutter member by using electric power supplied from the main body.
    Type: Grant
    Filed: October 7, 2020
    Date of Patent: August 23, 2022
    Assignee: Canon Kabushiki Kaisha
    Inventors: Koji Wada, Tsuyoshi Ogawa, Hiroshi Takarada, Masaaki Sato
  • Patent number: 11420944
    Abstract: A compound represented by the following General Formula (I), a tautomer or a stereoisomer of the compound, a pharmaceutically acceptable salt thereof, or a solvate thereof, is used as a voltage-dependent T-type calcium channel blocker: wherein A represents a 5-membered heteroaryl group or a fused ring of a 5-membered or 6-membered heterocyclic ring with a benzene ring or a pyridine ring, each of which may have a substituent; R represents a hydrogen atom or the like; B represents CR5(Q1) or NQ2, herein Q1 represents a benzimidazole group which may have a substituent, or the like; Q2 represents an alkyl group having 1 to 8 carbon atoms which may have a substituent, a heteroaryl group which may have a substituent, or the like; R0, R1, R2, R3, R4, and R5 each represent a hydrogen atom or the like; and n and m each represent 0, 1, or 2.
    Type: Grant
    Filed: January 12, 2017
    Date of Patent: August 23, 2022
    Assignees: Nippon Chemiphar Co., Ltd., Kinki University
    Inventors: Hiroto Tanaka, Isao Ooi, Yuzo Mogi, Masaaki Hirose, Tsuyoshi Endo, Toru Ogawa, Atsufumi Kawabata
  • Publication number: 20220261298
    Abstract: A synchronous core processing unit executes the same program as a program executed by another computer for an execution unit at a synchronization timing synchronized with a synchronous core processing unit of the other computer, and migrates the program being executed for which migration is requested according to characteristics of the program to a quasi-synchronous core processing unit. The quasi-synchronous core processing unit executes the program migrated from the synchronous core processing unit, and then migrates the program to the synchronous core processing unit. The synchronous core processing unit outputs, to an output comparison machine, an execution result obtained by executing the program migrated from the quasi-synchronous core processing unit at the synchronization timing.
    Type: Application
    Filed: March 5, 2020
    Publication date: August 18, 2022
    Inventors: Takuma NOMIZU, Hidehiro KAWAI, Masaaki OGAWA
  • Publication number: 20220223747
    Abstract: An electromagnetic wave detector includes a light-receiving element, an insulating film, a two-dimensional material layer, a first electrode part, and a second electrode part. The light-receiving element includes a first semiconductor portion of a first conductivity type and a second semiconductor portion. The second semiconductor portion is joined to the first semiconductor portion. The second semiconductor portion is of a second conductivity type. The insulating film is disposed on the light-receiving element. The insulating film has an opening portion. The two-dimensional material layer is electrically connected to the first semiconductor portion in the opening portion. The two-dimensional material layer extends from on the opening portion onto the insulating film. The first electrode part is disposed on the insulating film. The first electrode part is electrically connected to the two-dimensional material layer. The second electrode part is electrically connected to the second semiconductor portion.
    Type: Application
    Filed: March 26, 2020
    Publication date: July 14, 2022
    Applicant: Mitsubishi Electric Corporation
    Inventors: Masaaki SHIMATANI, Shimpei OGAWA, Shoichiro FUKUSHIMA, Satoshi OKUDA
  • Publication number: 20220204376
    Abstract: The object is to provide a wastewater treatment method and a wastewater treatment system that reduce the total selenium concentration of treated water while reducing cost compared to conventional methods of removing selenium by oxidation. In the wastewater treatment method according to the present disclosure, an iron agent is added to waste water containing selenium and cyanogen to form a first coagulated substance, the first coagulated substance is removed by solid-liquid separation to obtain first treated water, a second iron agent is added to the first treated water, an acid is added to the first treated water to obtain acidic water, an oxidizing agent is added to the acidic water to oxidize the selenium, a coagulant is then added to form a second coagulated substance, and the second coagulated substance is removed by solid-liquid separation to obtain second treated water.
    Type: Application
    Filed: March 11, 2020
    Publication date: June 30, 2022
    Applicant: MITSUBISHI POWER ENVIRONMENTAL SOLUTIONS, LTD.
    Inventors: Takashi Tai, Masaaki Anzai, Naoki Ogawa, Ryosuke Uehara
  • Publication number: 20220181933
    Abstract: A rotor includes a shaft extending in an axial direction, a rotor core including laminations stacked in the axial direction, and at least one caulking portion at a radial-directional inner side of at least one magnet to caulk the laminations to each other. At least one magnet is embedded in the rotor core. At least one fixing portion fixes at least portions of outer peripheral edges of the laminations to each other. The caulking portion, the at least one magnet, and the at least one fixing portion are all arranged to be intersected by a straight line which is on a flat two-dimensional plane extending in a radial direction and a circumferential direction.
    Type: Application
    Filed: February 22, 2022
    Publication date: June 9, 2022
    Inventors: Shuji IWASAKI, Takahiro UETANI, Masaaki OGAWA
  • Patent number: 11289963
    Abstract: A rotor includes a shaft, a rotor core, at least one magnet, and at least one fixing portion. The shaft extends in an axial direction. The rotor core includes laminations, and at least one caulking portion. The laminations are stacked in the axial direction. The at least one caulking portion is located at a radial-directional inner side of the at least one magnet to caulk the laminations to each other. The at least one magnet is embedded in the rotor core. The at least one fixing portion fixes at least portions of outer peripheral edges of the laminations to each other.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: March 29, 2022
    Assignee: NIDEC CORPORATION
    Inventors: Shuji Iwasaki, Takahiro Uetani, Masaaki Ogawa
  • Publication number: 20200177040
    Abstract: A rotor includes a shaft, a rotor core, at least one magnet, and at least one fixing portion. The shaft extends in an axial direction. The rotor core includes laminations, and at least one caulking portion. The laminations are stacked in the axial direction. The at least one caulking portion is located at a radial-directional inner side of the at least one magnet to caulk the laminations to each other. The at least one magnet is embedded in the rotor core. The at least one fixing portion fixes at least portions of outer peripheral edges of the laminations to each other.
    Type: Application
    Filed: July 27, 2018
    Publication date: June 4, 2020
    Inventors: Shuji IWASAKI, Takahiro UETANI, Masaaki OGAWA
  • Patent number: 9583577
    Abstract: A semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, a third nitride semiconductor layer on the second nitride semiconductor layer, an electrode on the third nitride semiconductor layer, and an insulating layer under the electrode and between the first nitride semiconductor layer and the second nitride semiconductor layer.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: February 28, 2017
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Chisato Furukawa, Masaaki Ogawa, Takako Motai, Wakana Nishiwaki
  • Publication number: 20160268409
    Abstract: A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer located on the first nitride semiconductor layer, a first electrode on the second nitride semiconductor layer, a second electrode on the second nitride semiconductor layer, a p-type third nitride semiconductor layer on the second nitride semiconductor layer between the first electrode and the second electrode and in contact with the second nitride semiconductor layer, and a third electrode containing p-type polysilicon on the third nitride semiconductor layer and in contact with the third nitride semiconductor layer.
    Type: Application
    Filed: August 31, 2015
    Publication date: September 15, 2016
    Inventors: Masaaki OGAWA, Hitoshi KOBAYASHI
  • Publication number: 20160268380
    Abstract: A semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, a third nitride semiconductor layer on the second nitride semiconductor layer, an electrode on the third nitride semiconductor layer, and an insulating layer under the electrode and between the first nitride semiconductor layer and the second nitride semiconductor layer.
    Type: Application
    Filed: August 31, 2015
    Publication date: September 15, 2016
    Inventors: Chisato FURUKAWA, Masaaki OGAWA, Takako MOTAI, Wakana NISHIWAKI
  • Publication number: 20160268219
    Abstract: According to an embodiment, a semiconductor device includes a semiconductor layer, a first insulating layer that has refractive index of 1.95 or less, contains silicon nitride, and located on the semiconductor layer, and a resin that is provided on the first insulating layer and is in contact with the first insulating layer.
    Type: Application
    Filed: August 28, 2015
    Publication date: September 15, 2016
    Inventors: Chisato FURUKAWA, Masaaki OGAWA, Takako MOTAI, Yoko IWAKAJI
  • Patent number: 9444012
    Abstract: A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer includes a metal portion, plural first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plural first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.
    Type: Grant
    Filed: March 1, 2011
    Date of Patent: September 13, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koji Asakawa, Akira Fujimoto, Ryota Kitagawa, Takanobu Kamakura, Shinji Nunotani, Eishi Tsutsumi, Masaaki Ogawa
  • Publication number: 20160079371
    Abstract: According to one embodiment, there is provided a semiconductor device including a first semiconductor layer, a second semiconductor layer, a first insulating film, a first electrode, and a second insulting film. The first semiconductor layer includes a compound semiconductor. The second semiconductor layer is provided on the first semiconductor layer and includes a compound semiconductor. The first insulating film is provided on the second semiconductor layer. The first electrode is provided on the first insulating film. The second insulting film covers at least a portion of the first electrode and has a higher hydrogen concentration than the hydrogen concentration of the first insulating film.
    Type: Application
    Filed: March 2, 2015
    Publication date: March 17, 2016
    Inventors: Chisato FURUKAWA, Masaaki OGAWA, Takako MOTAI
  • Publication number: 20160079382
    Abstract: A semiconductor device includes a semiconductor layer, a gate insulation film on the semiconductor layer, and a gate electrode on the gate insulation film. The gate electrode includes a first metal compound layer with a first element also contained in the gate insulation film. A first metal layer is on the first metal compound layer, wherein the diffusion coefficient thereof in gold is smaller than the diffusion coefficient thereof in nickel. The first metal layer includes a second element also contained in the first metal compound layer. A gold layer is on the first metal layer. A second metal layer is on the gold layer. Third metal layers are on side surfaces of the gold layer. A source and drain electrode are provided. An interlayer insulation film is on the gate electrode.
    Type: Application
    Filed: March 2, 2015
    Publication date: March 17, 2016
    Inventors: Masaaki OGAWA, Takako MOTAI
  • Patent number: 9200601
    Abstract: A charge pipe passage includes: a first engine-side pipe passage part which extends vertically; a second engine-side pipe passage part which is connected to a lower end of the first engine-side pipe passage part on one side in the vehicle widthwise direction and extends from one side to the other side in the vehicle widthwise direction above the engine body; and a third engine-side pipe passage part which is communicably connected to the second engine-side pipe passage part on the other side in the vehicle widthwise direction and is connected to the engine body, and at least a part of the charge pipe passage between a frame-side support part and an engine-side support part is formed of an elastic tube.
    Type: Grant
    Filed: March 20, 2012
    Date of Patent: December 1, 2015
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Nobuyuki Kondo, Hiroshi Inaoka, Teruhide Yamanishi, Kazuo Fujihara, Toshinao Takigawa, Toshiyuki Hyodo, Masaaki Ogawa
  • Patent number: 8875684
    Abstract: A charge pipe passage includes a first tank-side pipe passage part which is connected to an upper surface of a fuel tank, and a second tank-side pipe passage part which is connected with the first tank-side pipe passage part and extends toward the other side of the fuel tank from one side of the fuel tank in the vehicle widthwise direction on an end portion thereof on a fuel tank side, and the first and second tank-side pipe passage parts, are fixed to the upper surface of the fuel tank.
    Type: Grant
    Filed: March 20, 2012
    Date of Patent: November 4, 2014
    Assignee: Honda Motor Co., Ltd.
    Inventors: Nobuyuki Kondo, Hiroshi Inaoka, Teruhide Yamanishi, Kazuo Fujihara, Toshinao Takigawa, Toshiyuki Hyodo, Masaaki Ogawa
  • Patent number: 8853711
    Abstract: A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.
    Type: Grant
    Filed: March 1, 2011
    Date of Patent: October 7, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akira Fujimoto, Koji Asakawa, Ryota Kitagawa, Takanobu Kamakura, Shinji Nunotani, Eishi Tsutsumi, Masaaki Ogawa
  • Patent number: 8813724
    Abstract: A charge pipe passage includes a second pipe passage part which is connected to a fuel tank by way of a first pipe passage part and extends toward the other side from one side in the vehicle widthwise direction, and a third pipe passage part which is communicably connected with the second pipe passage part on the other side in the vehicle widthwise direction and has a highest part arranged at a highest position of the charge pipe passage at an intermediate position thereof. A first check valve is interposed on the third pipe passage part downstream of the highest part, an atmospheric air introducing pipe passage is connected to the third pipe passage part upstream of the first check valve, and a second check valve is interposed on the atmospheric air introducing pipe passage at a position higher than the highest part.
    Type: Grant
    Filed: March 20, 2012
    Date of Patent: August 26, 2014
    Assignee: Honda Motor Co., Ltd
    Inventors: Nobuyuki Kondo, Hiroshi Inaoka, Teruhide Yamanishi, Kazuo Fujihara, Toshinao Takigawa, Toshiyuki Hyodo, Masaaki Ogawa
  • Patent number: 8680561
    Abstract: A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.
    Type: Grant
    Filed: March 1, 2011
    Date of Patent: March 25, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ryota Kitagawa, Akira Fujimoto, Koji Asakawa, Eishi Tsutsumi, Takanobu Kamakura, Shinji Nunotani, Masaaki Ogawa