Abstract: A charging apparatus for electrically charging a capacitor storage type power source comprises a switching circuit for turning on/off the charge current, a current detection circuit for detecting the charge current, a voltage detection circuit for detecting the voltage of power source, a constant current control circuit for outputting an error amplifying signal according to the current value, a power control circuit for outputting an error amplifying signal according to the current value, the voltage value-and a power reference value, a constant voltage control circuit for outputting an error amplifying signal according to the voltage value and a voltage reference value, an OR circuit for selecting one of the error amplifying signals and a control circuit for generating a pulse width modulation signal according to the error amplifying signal output from the OR circuit to turn on/off the switching circuit and control the charge current.

Abstract: The present invention provides an organic conductor comprising a deoxyribonucleic acid (DNA) and an electric charge-donating material bonded to the deoxyribonucleic acid, and an organic conductor comprising at least two DNAs; and an electric charge-transfer substance bonding to each base of the two DNAs.

Abstract: Interrupt process generated in a processor for arithmetic operation is offloaded onto a system control processor, thereby reducing disturbance to the processor for arithmetic operation. A heterogeneous multiprocessor system includes: means which accepts an interrupt in each CPU; means which inquires the accepted interrupt of an interrupt destination management table to select an interrupt destination CPU; means which queues the accepted interrupt; means which generates an inter-CPU interrupt to the selected interrupt destination CPU; each means which receives the inter-CPU interrupt in the interrupt source CPU, performs interrupt process of the interrupt source CPU, and generates the inter-CPU interrupt to the interrupt source CPU in the interrupt destination CPU; means which performs an interrupt end process; and means which performs interrupt process in its own CPU when the interrupt destination CPU selected as a result of the inquiry to the interrupt destination management table is its own CPU.

Abstract: A cord switch 1 has wire electrodes 12A, 12B spirally arranged along an inner surface of a hollow part 10 of a hollowed insulator 11 in a longitudinal direction such that the wire electrodes do not electrically contact with each other, an outer electrode 13 provided around an outer periphery surface of the hollowed insulator 11 and jacketed with an insulating layer 14. An electrostatic capacitance is formed between the outer electrode 13 and a wire electrode for grounding, and a floating electrostatic capacitance is formed between the outer electrode 13 and the earth. The close approach of the human body to the cord switch 1 can be detected in a non-contact manner by measuring the alteration in the electrostatic capacitance.

Abstract: An opening and closing apparatus is provided with a foreign material detecting sensor, a position detecting apparatus and a control circuit apparatus. The foreign material detecting sensor has a sensor electrode, and is arranged in a front end of a door panel. The foreign material detecting sensor outputs an electrostatic capacity detection signal corresponding to a change of an electrostatic capacity between the sensor electrode and a foreign material coming close to the electrode. The position detecting apparatus outputs a position detection signal corresponding to a position of the door panel. The control circuit apparatus compares a change amount of the electrostatic capacity detected on the basis of the electrostatic capacity detection signal with a threshold value so as to judge, on the basis of a result of comparison, whether or not a foreign material exists between the door panel and a vehicle body.

Abstract: An object of the present invention is to provide an antenna of small size which is excellent in the response characteristic in the high-frequency band, and to provide a communication device including the antenna having such an excellent characteristic that it is possible to realize downsizing of the device as a whole. That is, the present invention is directed to an antenna characterized by including a radiator made up of a carbon nanotube, and as a specific structure, for example, an antenna characterized by including an electrode that is connected with a part of the carbon nanotube and operates as a monopole antenna, and a communication device including the antenna.

Abstract: An electric part including a matrix-shaped nonconductive base member, and a carbon nanotube group that is sealed within the nonconductive base member and includes at least one of a carbon nanotube and a plurality carbon nanotubes that are electrically connected to each other. Substantially only an end portion of the carbon nanotube or at least carbon nanotube contained in the plurality of carbon nanotubes may be exposed from one surface of the nonconductive base member, and an electrode may be connected to a side surface of at least one carbon nanotube included in the carbon nanotube group.

Abstract: At the print request from the information processing apparatus, the functcion status of the functions of the image processing apparatus capable of executing plural functions is displayed on the information processing apparatus. For this purpose, the printer controller acquires the function status information for the image processing functions and manages in unified manner the acquired information indicating the function status of the image processing functions, and, at the transfer of the print data, the host computer acquires, from the printer controller, and displays the latest information of the function status of the image processing functions at the transfer of the print data.

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Abstract: An information processing apparatus which controls a host-based printer includes a determination portion which determines designation of feed from a feed unit or manual feed port, a display control portion which, when it is determined that feed from the manual feed port is designated, causes a display portion to display a display to prompt the operator to insert a print medium into the manual feed port, an identification portion which identifies compressed-image data transfer permission corresponding a user instruction, and a transfer portion which transfers compressed image data of one page to the host-based printer.

Abstract: An apparatus for manufacturing a carbon nanotube includes: at least two electrodes whose tips oppose to each other; a power supply which applies a voltage between the electrodes so as to generate discharge plasma in a discharge area between the electrodes; a plurality of magnets which generates at least one of a magnetic field having lines of magnetic force in multiple directions or a magnetic field having a component in parallel with the direction of a discharge current in the generation area of the discharge plasma; and a magnet cooling unit which cools the magnets.

Abstract: A semiconductor device includes: a passivation film; a first semiconductor layer that has a first main component of 4H—SiC of a first conductivity type; and a second semiconductor layer that has a second main component of 4H—SiC of a second conductivity type. The second semiconductor layer has a pn-junction with the first semiconductor layer. The pn-junction has a junction edge. The first and second semiconductor layers further include a local area that includes the junction edge. The local area has a first principal plane that interfaces with the passivation film. A normal to the first principal plane tilts by a first tilt angle in a range of 25 degrees to 45 degrees from a first axis of [0001] or [000-1] toward a second axis of <01-10>.

Abstract: A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.

Abstract: A technology capable of achieving the LU migration in terms of a file system and a logical volume and the effective migration in a host computer which provides a file system function and a logical volume function is provided. A computer system has I/O access unification and management means that obtains RAID configuration information and RAID statistical information in a disk array system and manages an I/O access unified management table in which file system configuration information and logical volume configuration information managed by an OS are unified. Also, the computer system has migration volume deciding means that determines a migration method based on the I/O access unified management table, migration influence predicting means that obtains migration influence prediction information, and RAID linkage migration performing means.

Abstract: To provide an active electronic device which is formed from a carbon nanotube and which excels in high frequency operation and an electronic apparatus using the active electronic device. Provided are the active electronic device including: a carbon nanotube (1); a first electrode (S) connected to one end of the carbon nanotube; a second electrode (D) connected to the other end of the carbon nanotube; and a third electrode (G) facing the carbon nanotube (1) to irradiate the carbon nanotube (1) with electromagnetic waves, in which the amount of current flowing into the carbon nanotube (1) is changed by electromagnetic waves, at least high frequency electromagnetic waves, radiated from the third electrode onto the carbon nanotube (1), and the electronic apparatus using the active electronic device.

Abstract: A method of manufacturing a carbon nanotube device including an inner electrode, having connecting step, connecting a carbon nanotube to the inner electrode, wherein the connecting step comprises: attaching a conductor to an end or periphery thereof of a needle-shaped or rod-shaped carrying electrode; arranging the carbon nanotube in contact or close to a predetermined connection part of the inner electrode; approaching the end of the carrying electrode on which the conductor is carried to the connection part; and transferring the conductor carried on the carrying electrode to the connection part or periphery thereof to connect the carbon nanotube to the inner electrode.

Abstract: The method of manufacturing an electric part including a matrix-shaped nonconductive base member, and a carbon nanotube group that is sealed within the nonconductive base member and includes at least one of a carbon nanotube and a plurality carbon nanotubes that are electrically connected to each other. According to the method, substantially only an end portion of the carbon nanotube or at least carbon nanotube contained in the plurality of carbon nanotubes may be exposed from one surface of the nonconductive base member, and an electrode may be connected to a side surface of at least one carbon nanotube included in the carbon nanotube group.

Abstract: A method of manufacturing a carbon nanotube device including an inner electrode, having connecting step, connecting a carbon nanotube to the inner electrode, wherein the connecting step comprises: attaching a conductor to an end or periphery thereof of a needle-shaped or rod-shaped carrying electrode; arranging the carbon nanotube in contact or close to a predetermined connection part of the inner electrode; approaching the end of the carrying electrode on which the conductor is carried to the connection part; and transferring the conductor carried on the carrying electrode to the connection part or periphery thereof to connect the carbon nanotube to the inner electrode. A carbon nanotube device manufactured by this method includes a conductive particle which electrically connects the inner electrode and the carbon nanotube.

Abstract: An electrical connection structure that is able to electrically connect wiring to a biopolymer, a production method of the electrical connection structure, and an electric wiring method which is able to perform wiring on a nanometer-scale. A first aspect of the production method of the present invention uses a carbon nanotube as an electrode, and makes the carbon nanotube contact the biopolymer. A second aspect of the production method applies electric current between the electrode and the biopolymer of the first aspect. The electrical connection structure of the present invention comprises at least the electrode formed by the carbon nanotube and the biopolymer, wherein the electrode is in contact with the biopolymer. In the electric wiring method of the present invention, the electrode formed by the carbon nanotube contacts the biopolymer to complete an electrical connection.

Abstract: Carbon nanotube structures are provided, in which the networks with a desired area and volume, where the carbon nanotubes are electrically or magnetically connected, are formed and the method for easily manufacturing the carbon nanotube structures with less carbon nanotube structures. Carbon nanotube devices are also provided, to which the useful carbon nanotube structures mentioned above are applied. A method for manufacturing carbon nanotube structures includes the steps of applying carbon nanotubes to a low-viscosity dispersion medium to obtain a high-viscosity dispersing liquid which includes carbon nanotubes, and forming a network of the carbon nanotubes having electrical and/or magnetic connections therebetween by removing the low-viscosity dispersion medium from the high-viscosity dispersed liquid.