Abstract: A method of manufacturing a sensor device includes a step of forming a sensor chip including a sensing element and a wiring portion connected to the sensing element on a substrate, a step of connecting the wiring portion to a lead, and a step of molding a member for covering a connecting portion between the wiring portion and the lead by injecting a molding material in a mold, while the sensing element is exposed. In the molding step, a buffering member is disposed between an area to be covered with the molded member and the sensing element. Furthermore, in the molding step, the buffering member is deformed by a pressure from the mold, and the molding material is injected in the deformed state of the buffering member so as to form the molded member.

Abstract: A sensor element (10) and sensor supporting body (30) are fixed on a jig (80) by adhesive (48) so that a surface (10A) of the sensor element (10) and a surface (30A) of the sensor supporting body (30) agree with each other. Therefore, it is possible to eliminate a step portion between the surface (10A) of the sensor element (10) of the thermal-process-type air-flow-rate sensor and the surface (30A) of the sensor supporting body (30). Accordingly, it is possible to reduce fluctuations in the characteristic of the thermal-process-type air-flow sensor.

Abstract: When a gate voltage VGS is applied, the Schottky barrier width due to the metallic spin band in the ferromagnetic source is decreased, and up-spin electrons from the metallic spin band are tunnel-injected into the channel region. However, down-spin electrons from the nonmagnetic contact (3b) are not injected because of the energy barrier due to semiconductive spin band of the ferromagnetic source (3a). That is, only up-spin electrons are injected into the channel layer from the ferromagnetic source (3a). If the ferromagnetic source (3a) and the ferromagnetic drain (5a) are parallel magnetized, up-spin electrons are conducted through the metallic spin band of the ferromagnetic drain to become the drain current. Contrarily, if the ferromagnetic source (3a) and the (ferromagnetic drain (5a) are antiparallel magnetized, up-spin electrons cannot be conducted through the ferromagnetic drain (5a) because of the energy barrier Ec due to the semiconductive spin band in the ferromagnetic drain (5a).

Abstract: A MISFET the channel region of which is a ferromagnetic semi-conductor has a feature that the drain current can be controlled by the gate voltage and a feature that the transfer conductance can be controlled by the relative directions of magnetization in the ferromagnetic channel region and the ferromagnetic source (or the ferromagnetic drain, or both the ferromagnetic source and ferromagnetic drain). As a result, binary information can be stored in the form of the relative magnetization directions, and the relative magnetization directions are electrically detected. If the magnetism is controlled by the electric field effect of the channel region of a ferromagnetic semiconductor, the current needed to rewrite the information can be greatly reduced. Thus, the MISFET can constitute a high-performance non-volatile memory cell suited to high-density integration.

Abstract: A nonvolatilely reconfigurable logical circuit is built It is a reconfigurable logical circuit based on the CMOS configuration using the spin MOSFET. By changing the transmission characteristic of each transistor in accordance with the magnetization states of Tr1, Tr2, Tr5, and Tr8 which are spin MOSFETs, it is possible to reconfigure all the two-input symmetric functions AND/OR/XOR/NAND/NOR/XNOR/“1”/“0”. Since it is possible to constitute the logical function by a small number of non-volatile elements, it is possible to reduce the chip area, thereby increasing the speed and reducing the power consumption.

Abstract: A pressure sensor includes a sensor chip having a pressure receiving surface formed on one surface of the sensor chip, a first case having one end portion at which the sensor chip is provided, a second case attached to the one end portion of the first case to cover the sensor chip. The second case is provided with a pressure introducing passage for introducing the pressure to the sensor chip, and a wiring board is provided at the one end portion of the first case to have a surface facing toward the pressure introducing passage. In the pressure sensor, the sensor chip is electrically connected with the surface of the wiring board through bumps by a flip-chip bonding such that the pressure receiving surface faces the surface of the wiring board, and an insulating member is provided to seal a connection portion of the bumps.

Abstract: A communication control apparatus of the present invention controls communication among a plurality of electronic devices mounted on a vehicle and mainly includes a control unit that is configured of a micro computer or the like and that periodically outputs clock pulses, a trouble detecting unit to detect a trouble in the control unit, and a communication control unit to interrupt communication upon detection of a trouble, that is, to control communication by disconnecting an electronic device. The trouble detecting unit includes an analog amount converting unit to convert clock pulses from the control unit to an analog amount and an analog amount comparing unit to compare the analog amount generated in the analog amount converting unit with a predetermined threshold.

Abstract: In a thermal-type flow rate sensor, a mold material is formed to integrally cover a predetermined range including a circuit chip, connecting parts of connecting wires with a flow rate detecting chip and the circuit chip, and connecting parts of connecting wires with the circuit chip and a lead portion, to expose a part of the flow rate detecting chip to a measured fluid. The flow rate detecting chip is located in a groove portion of a support member to have a clearance with the groove portion and to form a cavity part inside a thin wall portion of the detecting chip. The cavity part communicates with an outside through a communicating portion that includes the clearance, and the clearance is blocked by a filler at least at a portion positioned in the predetermined range. Therefore, the filler prevents the mold material from entering the clearance in the mold forming.

Abstract: An infrared sensor includes a substrate, a membrane as a small-thickness portion formed on the substrate, a detecting element for generating a detection signal on the basis of temperature variation occurring when receiving infrared rays, at least a part thereof being formed on the membrane, and an infrared ray absorption film formed on the membrane so as to cover at least a part of the detecting element. The detecting element is externally electrically connected through a sensor pad portion provided at an end portion of the detecting element. A substrate surface including the sensor pad portion and the infrared ray absorption film is coated by a protection film made of parylene.

Abstract: A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

Abstract: Sensor equipment includes: a sensor device having a sensing portion; and an electric connection portion coated with an electric insulation member. The electric connection portion electrically connects an external circuit and the sensor device. The electric insulation member is a thin film disposed on the electric connection portion. In the sensor equipment, the insulation member is made of the deposition film, which is not deteriorated with time. Therefore, the insulation member does not flow out from the connection portion. Accordingly, detection sensitivity of the sensor equipment is prevented from reducing.

Abstract: A sensor device is composed of a sensor element having a sensing portion, and a signal-outputting portion mounted on a substrate. The sensor element is also mounted on the substrate via a resilient material. The sensor element is electrically connected to the signal-outputting portion through a bonding wire. The work consisting of the sensor element, signal-outputting portion and the substrate is held in a molding die, and the work is molded with an insulating material, while keeping the sensing portion exposed outside of the insulating material. A depressed portion of the molding die, in which the sensor element is accommodated in the molding process, has substantially no clearance relative to the sensor element, and the sensor element is led to the depressed portion by resiliency of the material bonding the sensor element to the substrate. Therefore, no burs are formed on the sides of the sensor element in the molding process.

Abstract: A phosphorous ester compound of formula (I): wherein R1 and R2 independently represent hydrogen, C1-8 alkyl, C5-8 cycloalkyl, C6-12 alkylcycloalkyl, C7-12 aralkyl or phenyl, R3 represents hydrogen or C1-8 alkyl, R4, R5, R6 and R7 independently represent hydrogen, C1-8 alkyl, C5-8 cycloalkyl, C6-12 alkylcycloalkyl, C7-12 aralkyl, phenyl, C1-8 alkoxy, or halogen, provided that four R1 groups are the same or different, four R2 groups are the same or different, two R4 groups are the same or different, two R5 groups are the same or different, two R6 groups are the same or different, and two R7 groups are the same or different, X represents a single bond, sulfur, or —CHR8—, wherein R8 represents hydrogen, C1-8 alkyl, or C5-8 cycloalkyl, A represents a single bond, oxygen, etc.

Abstract: A flow rate detection device has a flow rate detection chip that is partially exposed to the flowing material to be measured and a casing that accommodates the flow rate detection chip. The casing has a bottom plate portion on which the flow rate detection chip is mounted, and a top plate portion that is disposed over the bottom plate portion and partially covers the flow rate detection chip. The space between the bottom plate portion and the top plate portion is filled with a sealant.

Abstract: A sensor device includes a circuit chip and a sensor chip. The circuit chip has a bonding portion. The sensor chip is stacked on the bonding portion of the circuit chip. The circuit chip and the sensor chip are bonded by a film-type adhesive containing 91 ±3 weight % of polyimide with no filler.

Abstract: A suspension system includes a lower arm having an I-shaped cross section. A coil spring seat portion is formed on the lower arm for supporting a coil spring. A center of stiffness of the lower arm is so located with respect to a centerline of load applied to the lower arm that the lower arm bends upward when a compressive force is applied thereto.

Abstract: A sensor element (10) and sensor supporting body (30) are fixed on a jig (80) by adhesive (48) so that a surface (10A) of the sensor element (10) and a surface (30A) of the sensor supporting body (30) agree with each other. Therefore, it is possible to eliminate a step portion between the surface (10A) of the sensor element (10) of the thermal-process-type air-flow-rate sensor and the surface (30A) of the sensor supporting body (30). Accordingly, it is possible to reduce fluctuations in the characteristic of the thermal-process-type air-flow sensor.

Abstract: A rotary electric component includes a case for accommodating a rotary body having a cylindrical operation portion and for rotatably supporting the rotary body and a substrate having a rotation detecting means linked to the rotary body at a lower portion of the case. A guide groove whose distance from the center of rotation of the rotary body is continuously changed is formed in a bottom surface of the rotary body. The rotary detecting means of the substrate has a sliding portion fitted to the guide groove of the rotary body to slide according to the rotation of the rotary body, and outputs a signal according to a movement location of the sliding portion.

Abstract: A flow rate detection device has a flow rate detection chip that is partially exposed to the flowing material to be measured and a casing that accommodates the flow rate detection chip. The casing has a bottom plate portion on which the flow rate detection chip is mounted, and a top plate portion that is disposed over the bottom plate portion and partially covers the flow rate detection chip. The space between the bottom plate portion and the top plate portion is filled with a sealant.

Abstract: A semiconductor dynamic quantity sensor includes a supporting portion, an adhesive, and a sensor chip. The adhesive is located on a surface of the supporting portion. The sensor chip is located on the adhesive. The sensor chip and the supporting portion have been bonded together by heating the adhesive. The adhesive has a deformation factor of 0.5% or smaller at the temperature at which the adhesive is heated for bonding the sensor chip and the supporting portion together in order to reduce the stress caused by the hardening shrinkage of the adhesive.