Abstract: In a method of bonding a first bump on a surface of a first member and a second bump on a surface of a second member, a tip portion of the first bump is provided with a projection having a hardness greater than a hardness of each of the first and second bumps. The first and second members are positioned with respect to each other such that the first and second bumps face each other. The tip portion of the first bump is brought into contact with a tip portion of the second bump by sticking the projection into the tip portion of the second bump.

Abstract: A filter device is connected to a fuel pump for supplying filtered fuel to an internal combustion engine. The filter device has a bag-shaped filter element forming therein a fuel passage, wherein fuel passes through the filter element to enter into the fuel passage. The filter element further forms a vapor pooling chamber above the fuel passage, so that vapors separated from the filtered fuel in the fuel passage are moved toward the vapor pooling chamber. A valve device is provided at a portion of the filter device, which is close to the vapor pooling chamber, so that vapors are discharged from the vapor pooling chamber to an outside of the filter device.

Abstract: Even a site having a complicated curved surface shape, such as a welded spot on a bottom of a nuclear reactor core, is simply and electrolytically etched without discharging an etching liquid in a large amount, whereby grain boundary on the surface of the nuclear reactor core internals can be confirmed visually. When the surface of nuclear reactor core internals is electrolytically etched, a sponge provided with holes having a communicating structure is integrated with an etching liquid, and the etching liquid is gelled, while the integrated combination is disposed in front of an electrode, followed by the application of voltage to turn on electricity at a state in which said electrode is electrically connected to the cathode of a direct-current power supply, and brought into contact with or approximated to the surface of the core internals electrically connected to the anode of the direct-current power supply.

Abstract: A structure of a suspension subframe (1) for supporting a plurality of suspension arms (12, 14, 16) of multi-link suspension systems (2), which comprises first and second lateral members (20, 22) each extending in a lateral direction of a vehicle body, a pair of longitudinal members (24, 26) each extending in a longitudinal direction of the vehicle body, a pair of right and left upper-arm support portions (52) provided in right and left ends of the first lateral member (20 or 22), respectively, and a pair of right and left lower-arm support portions (50) provided in the right and left ends of the first lateral member (20 or 22), respectively, wherein the first lateral member (20 or 22) is formed to allow a load to be transmitted diagonally between the left upper-arm support portion (52) and the right lower-arm support portion (50) and diagonally between the left lower-arm support portion (50) and the right upper-arm support portion (52).

Abstract: A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

Abstract: A logic circuit that can reconfigure its functions in a nonvolatile manner and a single-electron transistor to be used in the logic circuits are provided. The logic circuit has a single-electron spin transistor that includes: a source; a drain; an island that is provided between the source and the drain, and has tunnel junctions between the island and the source and drain; and a gate that is capacitively coupled to the island. In this logic circuit, at least one of the source, the drain, and the island includes a ferromagnetic material having a variable magnetization direction.

Abstract: A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

Abstract: A MISFET the channel region of which is a ferromagnetic semi-conductor has a feature that the drain current can be controlled by the gate voltage and a feature that the transfer conductance can be controlled by the relative directions of magnetization in the ferromagnetic channel region and the ferromagnetic source (or the ferromagnetic drain, or both the ferromagnetic source and ferromagnetic drain). As a result, binary information can be stored in the form of the relative magnetization directions, and the relative magnetization directions are electrically detected. If the magnetism is controlled by the electric field effect of the channel region of a ferromagnetic semiconductor, the current needed to rewrite the information can be greatly reduced. Thus, the MISFET can constitute a high-performance non-volatile memory cell suited to high-density integration.

Abstract: In an underwater remote surface inspection method for a reactor constituting member, in order to improve the precision of an operation of inspecting a surface shape of the reactor constituting member, an underwater remote surface inspection apparatus includes a replica picking head, an ultrasonic vibrator, and a replica agent cartridge. The replica picking head is pressed against a surface of core internal structure as an inspection target. A replica agent is supplied from the replica agent cartridge into the replica agent supply region formed inside the replica picking head and contacting with the surface of the core internal structure. After the operation of supplying the replica agent ends, an ultrasonic wave is transmitted from an ultrasonic vibrator to the replica agent inside the replica agent supply region. Accordingly, gas bubbles or liquid bubbles existing inside the replica agent supply region rise up so as to be discharged to the outside of the replica picking head through an air extracting hole.

Abstract: A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

Abstract: A method of manufacturing a positive electrode for a non-aqueous electrolyte battery is provided. The positive electrode has a current collector and an active material layer formed on the current collector. The method includes: coating a slurry onto the current collector, the slurry having a pH of from 5 to 9 and containing a positive electrode active material, water as a dispersion medium, carboxymethylcellulose, and a pH adjuster; and drying the coated slurry to form the active material layer.

Abstract: A fuel supply device includes a subtank in a fuel tank, a fuel pump in the subtank having a first pump unit suctioning fuel in the subtank to supply fuel to an external equipment and a second pump unit suctioning fuel outside the subtank to pump fuel into the subtank, and a filter connected to a first suction port of the first unit and a second suction port of the second unit and filtering supply fuel supplied to the equipment and pump fuel pumped into the subtank. The filter includes a case, a first filter, and a second filter. The first filter in a first passage of the case directing fuel in the subtank into the first port filters the supply fuel. The second filter in a second passage of the case directing fuel outside the subtank into the second port filters the pump fuel.

Abstract: A structure of a suspension subframe (1) for supporting a plurality of suspension arms (12, 14, 16) of multi-link suspension systems (2), which comprises first and second lateral members (20, 22) each extending in a lateral direction of a vehicle body, a pair of longitudinal members (24, 26) each extending in a longitudinal direction of the vehicle body, a pair of right and left upper-arm support portions (52) provided in right and left ends of the first lateral member (20 or 22), respectively, and a pair of right and left lower-arm support portions (50) provided in the right and left ends of the first lateral member (20 or 22), respectively, wherein the first lateral member (20 or 22) is formed to allow a load to be transmitted diagonally between the left upper-arm support portion (52) and the right lower-arm support portion (50) and diagonally between the left lower-arm support portion (50) and the right upper-arm support portion (52).

Abstract: In a method of bonding a first bump on a surface of a first member and a second bump on a surface of a second member, a tip portion of the first bump is provided with a projection having a hardness greater than a hardness of each of the first and second bumps. The first and second members are positioned with respect to each other such that the first and second bumps face each other. The tip portion of the first bump is brought into contact with a tip portion of the second bump by sticking the projection into the tip portion of the second bump.

Abstract: Disclosed is a suspension subframe structure of a vehicle, which is capable of improving the overall rigidity of a suspension subframe to effectively receive input loads from suspension arms, while reducing the overall weight of the suspension subframe.

Abstract: When a gate voltage VGS is applied, the Schottky barrier width due to the metallic spin band in the ferromagnetic source is decreased, and up-spin electrons from the metallic spin band are tunnel-injected into the channel region. However, down-spin electrons from the nonmagnetic contact (3b) are not injected because of the energy barrier due to semiconductive spin band of the ferromagnetic source (3a). That is, only up-spin electrons are injected into the channel layer from the ferromagnetic source (3a). If the ferromagnetic source (3a) and the ferromagnetic drain (5a) are parallel magnetized, up-spin electrons are conducted through the metallic spin band of the ferromagnetic drain to become the drain current. Contrarily, if the ferromagnetic source (3a) and the ferromagnetic drain (5a) are antiparallel magnetized, up-spin electrons cannon be conducted through the ferromagnetic drain (5a) because of the energy barrier Ec due to the semiconductive spin band in the ferromagnetic drain (5a).

Abstract: A nonvolatilely reconfigurable logical circuit is built. It is a reconfigurable logical circuit based on the CMOS configuration using the spin MOSFET. By changing the transmission characteristic of each transistor in accordance with the magnetization states of Tr1, Tr2, Tr5, and Tr8 which are spin MOSFETs, it is possible to reconfigure all the two-input symmetric functions AND/OR/XOR/NAND/NOR/XNOR/“1”/“0”. Since it is possible to constitute the logical function by a small number of non-volatile elements, it is possible to reduce the chip area, thereby increasing the speed and reducing the power consumption.

Abstract: When a gate voltage VGS is applied, the Schottky barrier width due to the metallic spin band in the ferromagnetic source is decreased, and up-spin electrons from the metallic spin band are tunnel-injected into the channel region. However, down-spin electrons from the nonmagnetic contact (3b) are not injected because of the energy barrier due to semiconductive spin band of the ferromagnetic source (3a). That is, only up-spin electrons are injected into the channel layer from the ferromagnetic source (3a). If the ferromagnetic source (3a) and the ferromagnetic drain (5a) are parallel magnetized, up-spin electrons are conducted through the metallic spin band of the ferromagnetic drain to become the drain current. Contrarily, if the ferromagnetic source (3a) and the (ferromagnetic drain (5a) are antiparallel magnetized, up-spin electrons cannot be conducted through the ferromagnetic drain (5a) because of the energy barrier Ec due to the semiconductive spin band in the ferromagnetic drain (5a).

Abstract: A logic circuit that can reconfigure its functions in a nonvolatile manner and a single-electron transistor to be used in the logic circuits are provided. The logic circuit has a single-electron spin transistor that includes: a source; a drain; an island that is provided between the source and the drain, and has tunnel junctions between the island and the source and drain; and a gate that is capacitively coupled to the island. In this logic circuit, at least one of the source, the drain, and the island includes a ferromagnetic material having a variable magnetization direction.

Abstract: A headphone set has at least one speaker unit and a housing that encloses the speaker unit. The housing has an elastic protruding portion having a cavity therein. A sound-emitting portion is formed as protruding from a vibrating zone of the speaker unit.