Abstract: Provided are a surface treatment agent that can effectively suppress pattern collapse of an inorganic pattern or resin pattern provided on a substrate, a surface treatment method using such a surface treatment agent, as well as a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. A surface treatment agent is used that is employed in hydrophobization treatment of a substrate surface and includes a silylation agent containing at least one compound having a disilazane structure and a solvent containing a five- or six-membered ring lactone compound.

Abstract: Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.

Abstract: A method of treating a polymer includes oxidatively treating the polymer including a carbon-carbon bond framework in a gas atmosphere at a pressure of not less than 5.0 MPa and at a temperature of higher than 140° C. and lower than 200° C. by using oxygen included in the gas atmosphere.

Abstract: In a color reading apparatus for successively reading respective red, green, and blue colors in each line while a document is continuously conveyed to a plurality of line sensor units arranged in a zigzag manner, the line sensor units are arranged with a distance equal to or shorter than a unit of line to prevent a color shift. When read data of the plurality of line sensor units in a conveying direction are to be combined, image data shifted by the number of lines corresponding to distances between the line sensor units in the conveying direction are set as first combination candidates. A color code and a line code are added to each of the data. Image data having the same color code and the same line code are combined. According to the image reading apparatus structured as described above, it is possible to obtain data capable of reproducing read data for each color on the same line without errors.

Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Abstract: [Problem] There is provided a method for producing an oxygen-containing compound safely and with improved reaction efficiency, in which an undesired peroxide is unlikely to be produced, and efficient heat exchange of the ozonization can be achieved.

Abstract: The present invention discloses a semiconductor wafer having a scribe line dividing the semiconductor wafer into a matrix of plural semiconductor chips. The semiconductor wafer includes a polysilicon layer, a poly-metal interlayer insulation film formed on the polysilicon layer, and a first metal wiring layer formed on the poly-metal interlayer insulation film. The semiconductor wafer includes a process-monitor electrode pad formed on a dicing area of the scribe line. The process-monitor electrode pad has a width greater than the width of the dicing area. The process-monitor electrode pad includes a contact hole formed in the poly-metal insulation film for connecting the first metal wiring layer to the polysilicon layer.

Abstract: A document reader comprises line sensors that are staggeredly arranged and read a white reference plate to obtain a white reference read value A, and a white reference average value AA is determined from value A for each line sensor. The line sensors read another white reference plate placed on a document support plate to obtain a white reference read value B, and a white reference read average value BB is determined from value B for each line sensor. A sensitivity effect coefficient C for each line sensor is determined by dividing BB by AA. Using the line sensors, there are obtained a document read value E for each line sensor by reading an illuminated document on the document support plate, a white reference read value Aa by reading with the white reference plate before reading the document, and a black reference read value D by reading the white reference plate under a condition that an illumination is turned off before reading of the document.

Abstract: A semiconductor device has a configuration in which more than three kinds of wells are formed with small level differences. One kind of well from among the more than three kinds of wells has a surface level higher than other kinds of wells from among the more than three kinds of wells. The one kind of well is formed adjacent to and self-aligned to at least one kind of well from among the other kinds of wells. The other kinds of wells are different in one of a conductivity type, an impurity concentration and a junction depth, and include at least two kinds of wells having the same surface level.

Abstract: A reference voltage generating circuit for generating a reference voltage includes MOSFETs connected to each other. At least one of the MOSFETs includes a control gate and a floating gate that is made hole-rich or discharged by ultraviolet irradiation, and the reference voltage generating circuit is configured to output the difference between threshold voltages of a pair of the MOSFETs as the reference voltage.

Abstract: A method of treating a polymer includes oxidatively treating the polymer including a carbon-carbon bond framework in a gas atmosphere at a pressure of not less than 5.0 MPa and at a temperature of higher than 140° C. and lower than 200° C. by using oxygen included in the gas atmosphere.

Abstract: Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.

Abstract: A method for measuring a liquid immersion lithography soluble fraction in an organic film including a mounting step of mounting a droplet of a liquid immersion medium for liquid immersion lithography on a surface of an organic film formed on a substrate; and a transfer step of transferring a component in the organic film into the droplet.

Abstract: Provided are a surface treatment agent that can effectively suppress pattern collapse of an inorganic pattern or resin pattern provided on a substrate, a surface treatment method using such a surface treatment agent, as well as a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. A surface treatment agent is used that is employed in hydrophobization treatment of a substrate surface and includes a silylation agent containing at least one compound having a disilazane structure and a solvent containing a five- or six-membered ring lactone compound.

Abstract: The present invention provides a material for forming a protective film that has favorable alkali solubility and gives a protective film excelling in water repellency, as well as a method for forming a photoresist pattern using this material for forming a protective film. The material for forming a protective film of the present invention contains an alkali-soluble polymer having a unit derived from a monomer represented by the following general formula (A-1) as a constitutional unit. In the general formula (A-1), R1 is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or the like; R2, R3, and R4 are each independently an alkylene chain having 1 to 6 carbon atoms or the like; R5 and R6 are each independently an alkyl group or fluoroalkyl group having 1 to 15 carbon atoms or the like; and at least one of R5 and R6 is a fluoroalkyl group; Z is an alkylene chain having 1 to 2 carbon atoms or an oxygen atom; m is 0 or 1; and n is an integer of 0 to 3.

Abstract: The object is to provide a surface treatment agent that can effectively prevent pattern collapse of an inorganic pattern or resin pattern provided on a substrate, and a surface treatment method using such a surface treatment agent. In addition, as another object, the present invention has an object of providing a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. The surface treatment agent used in the surface treatment of a substrate contains a silylation agent and a silylated heterocyclic compound.

Abstract: In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Furthermore, it is possible to apply a high refractive index liquid immersion medium, used in combination with the high refractive index liquid immersion medium, thus making it possible to further improve pattern accuracy. Using a composition comprising an acrylic resin component having characteristics which have substantially no compatibility with a liquid in which a resist film is immersed, particularly water, and are also soluble in alkaline, a protective film is formed on the surface of a resist film used.

Abstract: The liquid immersion lithography process is configured so that the resist pattern resolution is improved by exposing a resist film to the lithographic exposure light under the conditions in which the predetermined thickness of the liquid for liquid immersion lithography, of which the refractive index is higher than that of air and smaller than that of the resist film is intervened at least on the resist film in a path of the lithography exposure light reaching the resist film, a protective film is formed on the surface of the resist film to be used. Therefore, when various immersion liquid, water being the representative example is used in the liquid immersion lithography process can be formed, the deterioration of the resist film and the immersion liquid to be used are simultaneously prevented, and the number of the process steps are not increased, and then the resist pattern having higher resolving ability.

Abstract: A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-A?O—CH2—]n??(1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).

Abstract: Disclosed are a protective film-removing solvent for re-moving a protective film laminated on a photoresist film, which contains at least a hydrofluoroether; and a method of photoresist patterning in liquid immersion lithography, using the protective film-removing solvent.