Abstract: A develop processing apparatus is provided for processing an object with a developing solution, comprising a retaining member for rotatably retaining the object, a developing solution supply nozzle for supplying the developing solution to the object, a developing solution sucking nozzle for sucking the developing solution supplied to the object, a developing solution supply nozzle moving mechanism for moving the developing solution supply nozzle above the object, a developing solution sucking nozzle moving mechanism for moving the developing solution sucking nozzle above the object. After the developing solution is supplied to the object subsequent to moving the developing solution supply nozzle, the developing solution sucking nozzle is moved and the developing solution on the object is sucked.

Abstract: A dialkyl dialkoxycarbonylphenylphosphonate which is useful as a resin modifier, a process for producing the same in high yield at a low cost, and a process for producing a dicarboxyphenylphosphonic acid in high yield at a low cost are described.The process for producing a dialkyl dialkoxycarbonylphenylphosphonate comprises heating and reacting a dialkoxycarbonylphenyl halide with a trialkyl phosphate in the presence of a catalyst comprising an element of group VIII of the periodic table (such as an alumina supported palladium catalyst) and hydrolyzing the obtained dialkyl dialkoxycarbonylphenylphosphonate in the presence of an acid or base to produce a dicarboxyphenylphosphonic acid.

Abstract: A develop processing apparatus is provided for processing an object with a developing solution, comprising a retaining member for rotatably retaining the object, a developing solution supply nozzle for supplying the developing solution to the object, a developing solution sucking nozzle for sucking the developing solution supplied to the object, a developing solution supply nozzle moving mechanism for moving the developing solution supply nozzle above the object, a developing solution sucking nozzle moving mechanism for moving the developing solution sucking nozzle above the object. After the developing solution is supplied to the object subsequent to moving the developing solution supply nozzle, the developing solution sucking nozzle is moved and the developing solution on the object is sucked.

Abstract: A development processing apparatus includes a processing unit for storing a substrate S and a processing solution supply nozzle arranged above the substrate S stored in the processing unit. A processing solution storage is formed inside the supply nozzle. A supply passage for supplying the processing solution into the solution storage is connected to the supply nozzle. A plurality of eject holes for ejecting the processing solution in the solution storage are formed in a lower surface of the supply nozzle. In this processing apparatus, the upper surface of the solution storage consists of at least one inclined surface, and an exhaust port is formed in a high portion of the inclined surface.

Abstract: A powdered detergent composition comprising a nonionic surfactant as the main surfactant, which comprises (a) a polyoxyethylene alkyl ether, wherein the alkyl group has 10 to 20 carbon atoms on the average and the average molar number of ethylene oxide added is 5 to 15, in an amount of 12 to 35% by weight based on the total weight of the composition, (b) a lipolytic enzyme in such an amount that the lipolytic activity per gram of component (a) would be 0.1 to 500 LU, (c) an anionic surfactant in an amount of 1.0 to 7.0% by weight based on the total weight of the composition and (d) an alkaline material in an amount of 5 to 35% by weight based on the total weight of the composition, and of which a 0.1% by weight aqueous solution has a pH exceeding 9.0, is excellent in detergency on oily soils such as subum soil.

Abstract: An apparatus for hydrophobic treatment of a semiconductor wafer comprises a tank in which HMDS liquid is stored, a process chamber in which the wafer is treated, and a unit for supplying HMDS liquid from the tank into the process chamber in an amount needed at any desired time. The process chamber can be decompressed by an ejector which is connected to the process chamber through an exhaust pipe. A mount on which the wafer is mounted is arranged in the process chamber and it includes a heater embedded therein. A ring surrounds the mount and two liquid receiving recesses are formed on the top of the ring. Two HMDS liquid supply pipes extend just above their corresponding liquid receiving recesses. HMDS in liquid phase is supplied into the process chamber and vaporized in it. The density of HMDS gas in the process chamber is controlled by adjusting the amount of HMDS liquid supplied.

Abstract: An apparatus for hydrophobic treatment of a semiconductor wafer comprises a tank in which HMDS liquid is stored, a process chamber in which the wafer is treated, and a unit for supplying HMDS liquid from the tank into the process chamber in an amount needed at any desired time. The process chamber can be decompressed by an ejector which is connected to the process chamber through an exhaust pipe. A mount on which the wafer is mounted is arranged in the process chamber and it includes a heater embedded therein. A ring surrounds the mount and two liquid receiving recesses are formed on the top of the ring. Two HMDS liquid supply pipes extend just above their corresponding liquid receiving recesses. HMDS in liquid phase is supplied into the process chamber and vaporized in it. The density of HMDS gas in the process chamber is controlled by adjusting the amount of HMDS liquid supplied.

Abstract: A processing apparatus comprising a reaction chamber, a workpiece-supporting section located in the reaction chamber for supporting a workpiece, a gas distributor located in the reaction chamber and facing the workpiece-supporting section for distributing reaction gas to a workpiece that is on the supporting surface of the workpiece-supporting section, a gas supply for supplying the reaction gas into the reaction chamber through the gas distributor and at a predetermined pressure, and a drive mechanism for moving the gas distributor back and forth relative to the workpiece-supporting section in a direction that is parallel to the supporting surface of the workpiece-supporting section. The speed of the relative movement can be varied and the reaction gas flow rate can be controlled in accordance with the speed the relative movement or the position of the gas distributor with respect to the workpiece-supporting sector during the relative movement.

Abstract: A method of measuring the temperature of a matter accurately, in non-contact fashion and without setting any emissivity comprising obtaining a spectral characteristics of absorbing electromagnetic waves inherent to a matter whose temperature is to be measured, obtaining those absorption peak wavelengths of the electromagnetic waves which correspond to two or more high points of electromagnetic wave absorption rate obtained from the spectral characteristics, measuring amounts of the electromagnetic waves, which have the absorption peak wavelengths, radiated from the temperature-measured matter, and calculating the temperature of the matter from blues of the radiant amounts of the electromagnetic waves thus measured.