Abstract: An operation device for an autonomous vehicle includes a touch panel configured to display at least one of a start button and a deceleration button, and a notification button on the same screen. The autonomous vehicle is autonomously drivable. The start button is a button for starting driving of the autonomous vehicle in an autonomous drive mode. The deceleration button is a button for decelerating the autonomous vehicle during the autonomous drive mode. The notification button is a button for performing notification to an outside of the autonomous vehicle.

Abstract: An operation device for an autonomous vehicle includes a touch panel configured to display at least one of a start button and a deceleration button, and a notification button on the same screen. The autonomous vehicle is autonomously drivable. The start button is a button for starting driving of the autonomous vehicle in an autonomous drive mode. The deceleration button is a button for decelerating the autonomous vehicle during the autonomous drive mode. The notification button is a button for performing notification to an outside of the autonomous vehicle.

Abstract: An operation device for an autonomous vehicle includes a touch panel configured to display at least one of a start button and a deceleration button, and a notification button on the same screen. The autonomous vehicle is autonomously drivable. The start button is a button for starting driving of the autonomous vehicle in an autonomous drive mode. The deceleration button is a button for decelerating the autonomous vehicle during the autonomous drive mode. The notification button is a button for performing notification to an outside of the autonomous vehicle.

Abstract: An operation device for an autonomous vehicle includes a touch panel configured to display at least one of a start button and a deceleration button, a notification button, and a tab switch on the same screen, the autonomous vehicle being autonomously drivable, the start button being a button for starting driving of the autonomous vehicle in an autonomous drive mode, the deceleration button being a button for decelerating the autonomous vehicle during the autonomous drive mode, the notification button being a button for performing notification to an outside of the autonomous vehicle, and the tab switch being a switch for displaying or enlarging an equipment control button group for controlling equipment mounted on the autonomous vehicle.

Abstract: An operation device for an autonomous vehicle includes a touch panel configured to display at least one of a start button and a deceleration button, and a notification button on the same screen. The autonomous vehicle is autonomously drivable. The start button is a button for starting driving of the autonomous vehicle in an autonomous drive mode. The deceleration button is a button for decelerating the autonomous vehicle during the autonomous drive mode. The notification button is a button for performing notification to an outside of the autonomous vehicle.

Abstract: A data processing method is performed by an edge device acquiring collected data from a collection target and a first computer capable of communicating with the edge device. The method includes: a first calculation process of, by the edge device, storing the collected data in a secure region to which referring of internally stored information from outside is not allowable and calculating first data which has a data amount less than the collected data and is irreversible in the secure region based on the stored collected data; a first communication process of, by the edge device, transmitting the first data calculated through the first calculation process to the first computer; and a second calculation process of, by the first computer, calculating second data based on the first data transmitted from the edge device through the first communication process.

Abstract: A data processing method is performed by an edge device acquiring collected data from a collection target and a first computer capable of communicating with the edge device. The method includes: a first calculation process of, by the edge device, storing the collected data in a secure region to which referring of internally stored information from outside is not allowable and calculating first data which has a data amount less than the collected data and is irreversible in the secure region based on the stored collected data; a first communication process of, by the edge device, transmitting the first data calculated through the first calculation process to the first computer; and a second calculation process of, by the first computer, calculating second data based on the first data transmitted from the edge device through the first communication process.

Abstract: An on-vehicle interface apparatus includes a touch screen and an I/F controller. The I/F controller stores a first message and a second message having a lower urgency level in association with respective events. The I/F controller displays operation switches including operation switches regarding traveling of a vehicle irrespectively of the events on the touch screen, and, in response to occurrence of an event, displays a corresponding message on the touch screen. The I/F controller, in response to detection of a touch operation on a display region of the first message during display of the first message, outputs to the vehicle controller a signal that instructs execution of the driving control corresponding to the first message.

Abstract: An operation device for an autonomous vehicle includes a touch panel configured to display at least one of a start button and a deceleration button, and a notification button on the same screen. The autonomous vehicle is autonomously drivable. The start button is a button for starting driving of the autonomous vehicle in an autonomous drive mode. The deceleration button is a button for decelerating the autonomous vehicle during the autonomous drive mode. The notification button is a button for performing notification to an outside of the autonomous vehicle.

Abstract: An operation device for an autonomous vehicle includes a touch panel configured to display at least one of a start button and a deceleration button, a notification button, and a tab switch on the same screen, the autonomous vehicle being autonomously drivable, the start button being a button for starting driving of the autonomous vehicle in an autonomous drive mode, the deceleration button being a button for decelerating the autonomous vehicle during the autonomous drive mode, the notification button being a button for performing notification to an outside of the autonomous vehicle, and the tab switch being a switch for displaying or enlarging an equipment control button group for controlling equipment mounted on the autonomous vehicle.

Abstract: A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.

Abstract: A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.

Abstract: A manufacturing device inputs design information including three-dimensional structure data, generates a manufacturing process flow, and displays the manufacturing process flow on a screen for a user to check, modify, and confirm the flow based on design information and setting information. A process method includes a first process method of a direct modeling method having an FIB method and a second process method of a semiconductor manufacturing process method which is a non-FIB method. The manufacturing device generates a plurality of manufacturing process flows by a combination of cases where each of the process methods is applied to each of the regions of the three-dimensional data. The manufacturing process flow includes a process device, the process method, a control parameter value, a process time, and a total process time for each of process steps. An output unit outputs a manufacturing process flow having, for example, the shortest total process time.

Abstract: A manufacturing method of a MEMS sensor includes a step of, by irradiating a first hole formed in a second layer on a semiconductor substrate with a focused ion beam for a first predetermined time, forming a first sealing film, which seals the first hole, on the first hole, and a step of, by irradiating a second hole formed in the second layer with a focused ion beam for a second predetermined time, forming a second sealing film, which seals the second hole, on the second hole. At this time, each of the first predetermined time and the second predetermined time is a time in which thermal equilibrium of the second layer is maintainable, and the step of forming the first sealing film and the step of forming the second sealing film are performed repeatedly.

Abstract: A manufacturing method of a MEMS sensor includes a step of, by irradiating a first hole formed in a second layer on a semiconductor substrate with a focused ion beam for a first predetermined time, forming a first sealing film, which seals the first hole, on the first hole, and a step of, by irradiating a second hole formed in the second layer with a focused ion beam for a second predetermined time, forming a second sealing film, which seals the second hole, on the second hole. At this time, each of the first predetermined time and the second predetermined time is a time in which thermal equilibrium of the second layer is maintainable, and the step of forming the first sealing film and the step of forming the second sealing film are performed repeatedly.

Abstract: A manufacturing device inputs design information including three-dimensional structure data, generates a manufacturing process flow, and displays the manufacturing process flow on a screen for a user to check, modify, and confirm the flow based on design information and setting information. A process method includes a first process method of a direct modeling method having an FIB method and a second process method of a semiconductor manufacturing process method which is a non-FIB method. The manufacturing device generates a plurality of manufacturing process flows by a combination of cases where each of the process methods is applied to each of the regions of the three-dimensional data. The manufacturing process flow includes a process device, the process method, a control parameter value, a process time, and a total process time for each of process steps. An output unit outputs a manufacturing process flow having, for example, the shortest total process time.

Abstract: When a thin channel semiconductor layer formed on a side wall of a stacked film in which insulating films and gate electrodes are alternately stacked together is removed on the stacked film, a contact resistance between a vertical transistor including the channel semiconductor layer and the gate electrode, and a bit line formed on the stacked film is prevented from rising. As its means, a conductive layer electrically connected to the channel semiconductor layer is disposed immediately above the stacked film.

Abstract: Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced.

Abstract: A memory cell array having such a structure that can be realized with a simpler process and ideal for realizing a higher density is provided. Memory cells have a structure in which channel layers (88p and 89p) are formed on the side surfaces of each of a plurality of stacked structures which extends in the Y direction and is periodically formed in the X direction with a gate insulator film layer (9) interposed, and a resistance-change material layer (7) is formed so as to be electrically connected to two adjacent channel layers of the channel layers. Due to such a structure, it is not necessary to perform such a very difficult step that processes the resistance-change material and the silicons collectively and it is possible to provide the memory cell array with a simpler process.

Abstract: When a thin channel semiconductor layer formed on a side wall of a stacked film in which insulating films and gate electrodes are alternately stacked together is removed on the stacked film, a contact resistance between a vertical transistor including the channel semiconductor layer and the gate electrode, and a bit line formed on the stacked film is prevented from rising. As its means, a conductive layer electrically connected to the channel semiconductor layer is disposed immediately above the stacked film.