Abstract: The matching process includes: finding first and second three-dimensional reconstruction point sets that contain three-dimensional position coordinates of segments, and first and second feature set that contain three-dimensional information regarding vertices of the segments, from image data of an object (S2 to S4); and matching the first feature set with the second feature set, thereby determining a corresponding point of the first and second three-dimensional reconstruction point sets (S5 to S10), wherein Step S5 carries out initial matching with respect to the segments; Step S6 selects a feature point from the first feature set; Step S7 specifies an adjustment region containing the selected feature point; Step S8 carries out fine adjustment of matching with respect to the segments within the adjustment region; and Steps S6 to S8 are performed at each increase of the adjustment region and at each selection of the feature point.

Abstract: The device includes: an input unit (4) for receiving image data obtained by capturing images of an object by imaging units (C1 to C3); and an arithmetic unit (1) that performs: 1) finding a three-dimensional reconstruction point set that contain three-dimensional position information of segments obtained by dividing a boundary of the object in the image data, and a feature set that contain three-dimensional information regarding vertices of the segments, for each of multiple pairs of two different images; 2) calculating a total three-dimensional reconstruction point set and a total feature set by totaling the three-dimensional reconstruction point sets and the feature sets of the multiple pairs; and 3) matching a model feature set regarding model data of the object with the total feature set, thereby determining, among the total three-dimensional reconstruction point set, points corresponding to model points of the object.

Abstract: A semiconductor chip including a semiconductor substrate provided with a semiconductor device region and a porous single crystal layer, where the semiconductor device region is formed on the main surface portion of the semiconductor substrate, and the porous single crystal layer is formed in an inner region on the backside of the semiconductor substrate, and is comprised of erosion holes extending continuously from the backside of the semiconductor substrate in an inward direction of the semiconductor substrate, oxide films formed on inner surfaces of the erosion holes, and a single crystal portion.

Abstract: To produce a cell culture container which is suitable for use in, for example, biochemical experiments, clinical experiments, and research and development of drugs. The production of the cell culture container includes providing a cell culture container base 1 having a plurality of wells serving as regions for culturing cells; applying a hydrophilic photosensitive composition to the bottom surface of each of the wells, to thereby form a coating 3; subjecting the coating 3 to patternwise light exposure; and removing an uncured portion of the coating through development, to thereby yield a cell culture container having, on the bottom surface of each well, a patterned hydrophilic coating layer formed of a photo-cured product.

Abstract: A semiconductor chip including a semiconductor substrate provided with a semiconductor device region and a porous single crystal layer, where the semiconductor device region is formed on the main surface portion of the semiconductor substrate, and the porous single crystal layer is formed in an inner region on the backside of the semiconductor substrate, and is comprised of erosion holes extending continuously from the backside of the semiconductor substrate in an inward direction of the semiconductor substrate, oxide films formed on inner surfaces of the erosion holes, and a single crystal portion.

Abstract: A screen for a color display tube or display window has a structure of apertures in a black matrix and electro-luminescent material in the apertures. Steps in producing the screen include applying the black matrix and the electro-luminescent material, and exposing photosensitive material on the display window to light emitted by a light source and passed through a lens system and a shadow mask. The shadow mask is suspended from the display window and the lens system is positioned between the light source and the shadow mask. On the screen, the lens system realizes a microscopic light distribution of the light originating from the light source radiating towards the screen. The photosensitive material includes a bleaching dye functioning as a contrast enhancer in at least one of the process steps.

Abstract: A cooling block 17 has three water channels 21 formed so as to be located near an LD device 18 fixed to a side surface 17c, each water channel 21 having a water channel sectional shape like an elongated hole, and being inclined relative to the side surface 17c. Heat generated by the LD device 18 is eliminated by cooling water flowing through the water channels 21. The water channel sectional area of an inlet manifold water channel is rendered not less than twice the water channel sectional area of the cooling block water channel. Irregularities are formed on the inner surface of each of the cooling block water channels. Further, an inlet portion of the cooling block water channel is chamfered or given a curvature.

Abstract: In the manufacturing process of a screen (6), for use in a color display tube (1), a photosensitive process step, referred to as the exposure process, is used for applying the black matrix pattern and the phosphor layers to the display window (3) to form the screen (6). The robustness of this exposure process is dependent on, amongst others, the shape of the microscopic light distribution on the display window (3). It appears that in color display tubes (1) with an increased deflection angle, or in tubes with a real flat outer surface, the exposure process becomes more and more critical. According to the invention, this problem can be overcome by adding a bleaching dye to the photosensitive material used for the exposure process. This bleaching dye's action in the center of the microscopic light distribution is stronger than in the peripheral portions.

Abstract: Photosensitive compositions prepared without use of a chromium compound. The compositions exhibit high resolution and satisfactory sensitivity, and do not cause environmental pollution. The photosensitive compositions contain a water-soluble azide compound which serves as a photocrosslinking agent and poly(N-vinylacetamide) that is photocrosslinkable in the presence of the water-soluble azide compound.

Abstract: A core chip includes a magnetic core having a magnetic gap and a coil formed around the magnetic core. A head base includes a first main face on which a wiring pattern is formed, and a second main face on which the core chip is mounted. A conductive wire derived from the coil is electrically connected by extending only via the first main face. One end portion of the first main face is slanted and the core chip is mounted on the one end portion of the second main face. A recess or a slit is formed on the slanted portion of the first main face to extend the conductive wire therein.

Abstract: A magnetic head 1 provided with head chips 3 at distal end portions 2a of base plates 2. A punch 12 is abutted against each of the base plates 2 which is placed on a die 11, and a shearing force is applied to the base plate to plastically deform the distal end portion 2a, whereby adjustment of the height can be conducted while the sliding face of the head chip is kept in parallel to a reference track plane.

Abstract: Photosensitive compositions prepared without use of a chromium compound. The compositions exhibit high resolution and satisfactory sensitivity, and do not cause environmental pollution. The photosensitive compositions contain a water-soluble azide compound which serves as a photocrosslinking agent and poly(N-vinylacetamide) that is photocrosslinkable in the presence of the water-soluble azide compound.

Abstract: Photosensitive compositions prepared without use of a chromium compound. The compositions exhibit high resolution and satisfactory sensitivity, and do not cause environmental pollution. The photosensitive compositions contain a water-soluble azide compound which serves as a photocrosslinking agent and poly(N-vinylacetamide) that is photocrosslinkable in the presence of the water-soluble azide compound.

Abstract: A magnetic head 1 provided with head chips 3 at distal end portions 2a of base plates 2. A punch 12 is abutted against each of the base plates 2 which is placed on a die 11, and a shearing force is applied to the base plate to plastically deform the distal end portion 2a, whereby adjustment of the height can be conducted while the sliding face of the head chip is kept in parallel to a reference track plane.

Abstract: Photosensitive compositions prepared without use of a chromium compound. The compositions exhibit high resolution and satisfactory sensitivity, and do not cause environmental pollution. The photosensitive compositions contain a water-soluble azide compound which serves as a photocrosslinking agent and poly(N-vinylacetamide) that is photocrosslinkable in the presence of the water-soluble azide compound.

Abstract: A filter element includes a bundle of hollow fiber type separation membranes made of a natural or synthetic macromolecular material and a sealed part made of a thermoplastic resin. The bundle has an opening in at least one terminal part thereof. The sealed part is bonded to the bundle at a temperature not higher than the melting or decomposing temperature of the macromolecular material and adapted to seal watertightly the opening of the bundle in a half-bonded state showing no compatibility with the macromolecular material and permitting persistence of the mutual interface of bondage.

Abstract: A silicon wafer having microscopic defects is immersed into the diluted hydrofluoric acid with spiking metal salt such as CuSO4.5H2O for 1 to 3 minutes. After immersing, metals which have selectively deposited on the microscopic defects are detected by using particle counters.

Abstract: Photosensitive compositions prepared without use of a chromium compound. The compositions exhibit high resolution and satisfactory sensitivity, and do not cause environmental pollution. The photosensitive compositions contain a water-soluble azide compound which serves as a photocrosslinking agent and poly(N-vinylformamide) that is photocrosslinkable in the presence of the water-soluble azide compound.

Abstract: A filter element includes a bundle of hollow fibers made of first polyolefin. The bundle has at least one end sealed with second polyolefin having an average molecular weight in the range of 1,000 to 16,000. The filter element is produced by a method including the steps of fusing the second polyolefin having a fusion point lower than that of the first polyolefin, attaching the fused second polyolefin to at least one end of the bundle, allowing the attached second polyolefin to set, thereby providing the bundle with a sealed portion, and cutting off the leading end of the sealed portion.

Abstract: An impurity diffusion layer shallow in diffusion depth and high in activity is formed in a semiconductor device. In the semiconductor device, clusters of icosahedron structure each composed of boron atoms are formed in the silicon crystal of the impurity layer of the semiconductor device so as to function as acceptors. Further, after the clusters of icosahedron structure each composed of 12 boron atoms have been formed by implanting boron ions at high concentration, the device is processed at temperature lower than 700.degree. C. to prevent the boron from being decreased due to combination with silicon. Since an impurity layer shallow in diffusion from the substrate surface and high in activity can be formed and further the clusters of icosahedron structure each composed of 12 boron atoms can be utilized as acceptors, it is possible to realize a high doping even in the manufacturing process for the devices not suitable for high temperature annealing.