Abstract: A connection plate for battery terminals capable of inhibiting a first member and a second member from being detached from each other is provided. This bus bar 2 (connection plate for battery terminals) includes a first member (3) including a first hole (30) and an embedding hole (31), made of first metal and a second member (4) having a second hole (42), including a base (40) made of second metal, embedded in the embedding hole of the first member, while an intermetallic compound layer (5) containing at least one of the first metal and the second metal is formed on an interface between the embedding hole of the first member and the second member.

Abstract: Provided is an airtightly sealing cap, by which a use quantity of Au is reduced in a soldering material for sealing a miniaturized electronic component storing package. An airtightly sealing cap (10) is used for an electronic component storing package (100) which includes an electronic component storing member (20) for storing an electronic component (40). The airtightly sealing cap is provided with a base material (1); a base layer (2) which is formed on the surface of the base material and contains Ni; and a soldering material layer (6), which is formed on the base layer, has a thickness of 10 ?m or less and composed of Au and Sn. The content percentage of Au in the soldering material layer is 43 mass % or more but not more than 64 mass %.

Abstract: A more thinnable hermetic sealing cap can be provided. This hermetic sealing cap (10) is employed for an electronic component housing package (100) housing an electronic component (40) and includes a cap body portion (1) mainly composed of Ti.

Abstract: A more thinnable hermetic sealing cap can be provided. This hermetic sealing cap (10) is employed for an electronic component housing package (100) housing an electronic component (40) and includes a cap body portion (1) mainly composed of Ti.

Abstract: A hermetic sealing cap can be provided which is capable of suppressing that a production process becomes complicated, and additionally of suppressing that a solder layer wetly spreads inward on a sealing surface. This hermetic sealing cap (1, 30) includes a base member (2), a first plating layer (3, 31) that is formed on the surface of the base member, and a second plating layer (4, 32) that is formed on the surface of the first plating layer and is less oxidized than the first plating layer, wherein a part of the second plating layer in an area (S1, S5) inside an area (S2, S6) to which an electronic component accommodation member is joined is removed so that the surface of the first plating layer is exposed, and the surface of the first plating layer that is exposed in the area from which the second plating layer is removed is oxidized.

Abstract: Provided is an airtightly sealing cap, by which a use quantity of Au is reduced in a soldering material for sealing a miniaturized electronic component storing package. An airtightly sealing cap (10) is used for an electronic component storing package (100) which includes an electronic component storing member (20) for storing an electronic component (40). The airtightly sealing cap is provided with a base material (1); a base layer (2) which is formed on the surface of the base material and contains Ni; and a soldering material layer (6), which is formed on the base layer, has a thickness of 10 ?m or less and composed of Au and Sn. The content percentage of Au in the soldering material layer is 43 mass % or more but not more than 64 mass %.

Abstract: A hermetic sealing cap can be provided which is capable of suppressing that a production process becomes complicated, and additionally of suppressing that a solder layer wetly spreads inward on a sealing surface. This hermetic sealing cap (1, 30) includes a base member (2), a first plating layer (3, 31) that is formed on the surface of the base member, and a second plating layer (4, 32) that is formed on the surface of the first plating layer and is less oxidized than the first plating layer, wherein a part of the second plating layer in an area (S1, S5) inside an area (S2, S6) to which an electronic component accommodation member is joined is removed so that the surface of the first plating layer is exposed, and the surface of the first plating layer that is exposed in the area from which the second plating layer is removed is oxidized.

Abstract: Cap for airtight sealing (1) that not only suppresses any deterioration of the properties of electronic parts (20) to thereby reduce material costs but also enables use of Pb-free solders, and that is capable of suppressing any airtightness deterioration. This cap for airtight sealing comprises low thermal expansion layer (2); Ni—Co alloy layer (3) superimposed on the surface of the low thermal expansion layer and composed mainly of Ni wherein a diffusion acceleration material is contained; Ni layer (4) superimposed on the surface of the Ni—Co alloy layer; and solder layer (5) superimposed on the surface of the Ni layer at regions for bonding of electronic part accommodation member (10) and composed mainly of Sn. The Ni layer has the functions of not only suppressing any diffusion of the Ni—Co alloy layer into the solder layer at about 235° C. (first temperature) but also at bonding of the solder layer with the electronic part accommodation member at about 300° to about 320° C.

Abstract: A hermetic sealing cap member capable of suppressing deterioration of characteristics of an electronic component resulting from a sealant such as solder coming into contact with the electronic component in a package is obtained. This hermetic sealing cap, which is a hermetic sealing cap employed for an electronic component storing package for storing an electronic component (5, 34), comprises a hermetic sealing cap member (11, 41), a first plating layer (12, 42) formed at least on a region other than a region of the hermetic sealing cap member formed with a sealant (3, 32) and a second plating layer (13, 43), formed on the region of the hermetic sealing cap member on which the sealant is arranged, containing a material superior in wettability with the sealant to the first plating layer.

Abstract: The method for producing a solder bump transfer sheet of the invention includes the steps of: providing a sheet having a chromium oxide layer containing substantially no iron oxide as the outermost surface; and forming a plurality of solder bumps placed in a predetermined pattern on the chromium oxide layer.

Abstract: A hermetic sealing cap member capable of suppressing deterioration of characteristics of an electronic component resulting from a sealant such as solder coming into contact with the electronic component in a package is obtained. This hermetic sealing cap, which is a hermetic sealing cap employed for an electronic component storing package for storing an electronic component (5, 34), comprises a hermetic sealing cap member (11, 41), a first plating layer (12, 42) formed at least on a region other than a region of the hermetic sealing cap member formed with a sealant (3, 32) and a second plating layer (13, 43), formed on the region of the hermetic sealing cap member on which the sealant is arranged, containing a material superior in wettability with the sealant to the first plating layer.

Abstract: The method for producing a solder bump transfer sheet of the invention includes the steps of: providing a sheet having a chromium oxide layer containing substantially no iron oxide as the outermost surface; and forming a plurality of solder bumps placed in a predetermined pattern on the chromium oxide layer.

Abstract: The present invention provides a process for producing embryo extract material characterized in comprising the steps where material plant seeds are mildly milled for removal of endsperm of plant seeds, from the milled product of the said material plant seeds are recovered fractions passing through 1.00˜0.45 mm sieves under shaking condition, the periderm of seeds is eliminated by winnowing, suspension supernatant in water or in aqueous solution free from organic solvent is recovered (flotation) and washing with water free from organic solvent or aqueous solution is carried out; embryo extract material produced by the said process; embryo extract obtained from the said embryo extract material; and a method for protein synthesis with the said embryo extract.

Abstract: The method for producing a solder bump transfer sheet of the invention includes the steps of: providing a sheet having a chromium oxide layer containing substantially no iron oxide as the outermost surface; and forming a plurality of solder bumps placed in a predetermined pattern on the chromium oxide layer.

Abstract: In a video transmission system which transmits video data through a network, the network sets up fixed virtual connections between transmitters and a receiver. In the receiver, a connection control portion designates a desired one of the virtual connections and a header controller only extracts packets of the designated virtual connection.

Abstract: In a video transmission system which transmits video data through an ATM network, the ATM network sets up fixed virtual connections between transmitters and a receiver. In the receiver, a connection control portion designates a desired one of the virtual connections and a header controller only extracts cells of the designated virtual connection.

Abstract: To provide a method for evaluating chargeup damage caused in the practical fabrication process. Evaluation is carried out based on the electric current flowing between the source and the drain of a MOS transistor of a semiconductor element (1—1) having a wiring layer provided with an antenna effect by installing the semiconductor element (1—1) in the periphery of a practical device installed in a semiconductor substrate and measuring the electric current without attaching a probe to the gate of the semiconductor element (1—1).

Abstract: The method for producing a solder bump transfer sheet of the invention includes the steps of: providing a sheet having a chromium oxide layer containing substantially no iron oxide as the outermost surface; and forming a plurality of solder bumps placed in a predetermined pattern on the chromium oxide layer.

Abstract: To provide a method for evaluating chargeup damage caused in the practical fabrication process. Evaluation is carried out based on the electric current flowing between the source and the drain of a MOS transistor of a semiconductor element (1-1) having a wiring layer provided with an antenna effect by installing the semiconductor element (1-1) in the periphery of a practical device installed in a semiconductor substrate and measuring the electric current without attaching a probe to the gate of the semiconductor element (1-1).

Abstract: The purpose of the present invention is to improve releasability from the jig of a method of producing a minute metal ball by heating and melting and then cooling a metal piece of specific dimensions and further, to present a metal ball with very good dimensional accuracy and sphericity, even though diameter is minute. By means of the above-mentioned method, very good releasability between the metal ball and jig after melting and cooling is obtained and long-term use of the tool becomes possible by placing a metal piece on a jig with a layer of fine powder of BN, AlN or C having low wettability with the metal piece in between, or by making a layer of fine powder adhere to the surface of the metal piece and then placing this metal piece on the jig or shaking and arranging individual metal pieces in holes in the same.