Abstract: A substrate treatment method capable of obtaining a flat processing target film. Molecules of an HF gas are adsorbed onto a corner SiO2 layer remaining in a corner portion of a groove of a wafer subjected to an oxide film removal process. An excess HF gas is discharged. An NH3 gas is supplied toward the corner SiO2 layer onto which the molecules of the HF gas are adsorbed. AFS is formed by reacting the corner SiO2 layer, the HF gas and the NH3 gas with each other. The AFS is sublimated and removed.

Abstract: There is provided a substrate processing method for removing an oxide film formed on a surface of a substrate. The method includes (a) transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate accommodated in a processing chamber; and (b) sublimating the reaction by-product to remove the reaction by-product from the substrate by stopping the supply of the halogen element-containing gas into the processing chamber and supplying an inert gas into the processing chamber. The steps (a) and (b) are repeated a plurality of times.

Abstract: In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.

Abstract: A substrate processing method for removing an oxide film formed on the surface of a substrate includes modifying the oxide film into a reaction product by supplying a halogen element-containing gas and an alkaline gas onto the substrate accommodated in the interior of a processing chamber, and sublimating the reaction product by stopping the supply of the halogen element-containing gas into the processing chamber for removal from the substrate, wherein an internal pressure of the processing chamber in the sublimating is set to be higher than an internal pressure of the processing chamber in the modifying by supplying an inert gas into the processing chamber.

Abstract: A substrate processing method includes a fluorine-based gas supply step of supplying a fluorine-based gas into a processing chamber where a substrate having a silicon-based film is accommodated, a purge gas supply step of supplying a purge gas for discharging the supplied fluorine-based gas into the processing chamber. The substrate processing method further includes a nitrogen-based gas supply step of supplying a nitrogen-based gas into the processing chamber from which the fluorine-based gas has been discharged. In the substrate processing method, at least in the fluorine-based gas supply step and the purge gas supply step, a temperature of the substrate is maintained at 60° C. or less.

Abstract: In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.

Abstract: A substrate treatment method capable of obtaining a flat processing target film. Molecules of an HF gas are adsorbed onto a corner SiO2 layer remaining in a corner portion of a groove of a wafer subjected to an oxide film removal process. An excess HF gas is discharged. An NH3 gas is supplied toward the corner SiO2 layer onto which the molecules of the HF gas are adsorbed. AFS is formed by reacting the corner SiO2 layer, the HF gas and the NH3 gas with each other. The AFS is sublimated and removed.

Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.

Abstract: A linear member transfer apparatus includes: a linear member housing portion having a bottomed cylindrical shape and including: a bottom portion; an opening; a side wall; a restriction portion that is a diaphragm disposed on a position at a predetermined distance from the bottom portion and that has an inner diameter smaller than an inner diameter of the bottom portion; a first chamber configured to house a linear member in a wound state; and a second chamber configured to house the linear member in an extended state; a transfer portion configured to transfer the linear member; and a guide.

Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.

Abstract: When an air supply conduit is connected to an empty space portion inside an endoscope and air is fed to the empty space portion to perform a leak determination based on a change in the internal pressure of the endoscope which is caused by the air, a surface temperature of the endoscope that is measured by a temperature measurement portion is maintained at a temperature at the time that the leak determination starts, through energy supply control that irradiates far infrared rays onto a surface of the endoscope from a far-infrared ray irradiation portion.

Abstract: A substrate processing method includes a fluorine-based gas supply step of supplying a fluorine-based gas into a processing chamber where a substrate having a silicon-based film is accommodated, a purge gas supply step of supplying a purge gas for discharging the supplied fluorine-based gas into the processing chamber. The substrate processing method further includes a nitrogen-based gas supply step of supplying a nitrogen-based gas into the processing chamber from which the fluorine-based gas has been discharged. In the substrate processing method, at least in the fluorine-based gas supply step and the purge gas supply step, a temperature of the substrate is maintained at 60° C. or less.

Abstract: A substrate processing method for removing an oxide film formed on the surface of a substrate includes modifying the oxide film into a reaction product by supplying a halogen element-containing gas and an alkaline gas onto the substrate accommodated in the interior of a processing chamber, and sublimating the reaction product by stopping the supply of the halogen element-containing gas into the processing chamber for removal from the substrate, wherein an internal pressure of the processing chamber in the sublimating is set to be higher than an internal pressure of the processing chamber in the modifying by supplying an inert gas into the processing chamber.

Abstract: A linear member transfer apparatus includes: a linear member housing portion having a bottomed cylindrical shape and including: a bottom portion; an opening; a side wall; a restriction portion that is a diaphragm disposed on a position at a predetermined distance from the bottom portion and that has an inner diameter smaller than an inner diameter of the bottom portion; a first chamber configured to house a linear member in a wound state; and a second chamber configured to house the linear member in an extended state; a transfer portion configured to transfer the linear member; and a guide.

Abstract: When an air supply conduit is connected to an empty space portion inside an endoscope and air is fed to the empty space portion to perform a leak determination based on a change in the internal pressure of the endoscope which is caused by the air, a surface temperature of the endoscope that is measured by a temperature measurement portion is maintained at a temperature at the time that the leak determination starts, through energy supply control that irradiates far infrared rays onto a surface of the endoscope from a far-infrared ray irradiation portion.

Abstract: There is provided a substrate processing method for removing an oxide film formed on a surface of a substrate. The method includes (a) transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate accommodated in a processing chamber; and (b) sublimating the reaction by-product to remove the reaction by-product from the substrate by stopping the supply of the halogen element-containing gas into the processing chamber and supplying an inert gas into the processing chamber. The steps (a) and (b) are repeated a plurality of times.

Abstract: A cleaning/disinfecting apparatus includes: a plurality of attachment portions for attaching an endoscope; a cleaning/disinfecting portion that communicates with the plurality of attachment portions and can execute different types of cleaning/disinfection menus for the respective attachment portions; and an endoscope information reading portion that reads endoscope information from the endoscope. Also, the cleaning/disinfecting apparatus includes: a control portion that determines a cleaning/disinfection menu based on the read endoscope information and outputs attachment portion identifying information for identifying an attachment portion for executing the determined cleaning/disinfection menu; and a notifying portion that notifies the attachment portion identifying information outputted from the control portion.

Abstract: A cleaning/disinfecting apparatus includes: a plurality of attachment portions for attaching an endoscope; a cleaning/disinfecting portion that communicates with the plurality of attachment portions and can execute different types of cleaning/disinfection menus for the respective attachment portions; and an endoscope information reading portion that reads endoscope information from the endoscope. Also, the cleaning/disinfecting apparatus includes: a control portion that determines a cleaning/disinfection menu based on the read endoscope information and outputs attachment portion identifying information for identifying an attachment portion for executing the determined cleaning/disinfection menu; and a notifying portion that notifies the attachment portion identifying information outputted from the control portion.

Abstract: An endoscope cleaning/disinfecting apparatus for processing an endoscope in a cleaning tank using a diluted chemical obtained by diluting a chemical with hot water in a dilution tank of the present invention introduces the hot water into the cleaning tank immediately before processing, introduces the hot water into the dilution tank after the temperature of the hot water introduced into the cleaning tank falls within a specified temperature range, generates the diluted chemical, introduces the diluted chemical into the cleaning tank and processes the endoscope.

Abstract: A water leakage checking apparatus includes: a plurality of attachment portions for attaching an endoscope; a water leakage sensing portion that communicates with the plurality of attachment portions and simultaneously carries out a plurality of items of a water leakage check menu; and an endoscope information reading portion that reads endoscope information from the endoscope. Also, the water leakage checking apparatus includes: a control portion that determines an item of the water leakage check menu based on the read endoscope information, assigns the determined item of the water leakage check menu to one of the plurality of attachment portions, and outputs attachment portion identifying information for identifying the assigned one of the attachment portions; and a notifying portion that notifies the attachment portion identifying information outputted from the control portion.